HS0038A2

Vishay Semiconductors

IR Receiver Modules for Remote Control Systems

Description
The HS0038A2 is a miniaturized receiver for infrared
remote control systems. A PIN diode and a
preamplifier are assembled on a lead frame, the
epoxy package acts as an IR filter.
The demodulated output signal can be directly
decoded by a microprocessor. The HS0038A2 is 1
compatible with all common IR remote control data 2
94 8691
formats. 3

This component has not been qualified according to

automotive specifications.

Features Mechanical Data

• Very low supply current Pinning:
• Photo detector and preamplifier in one 1 = GND, 2 = VS, 3 = OUT
package
• Internal filter for PCM frequency
e3
• Improved shielding against EMI
• Supply voltage: 2.5 V to 5.5 V
• Improved immunity against ambient light
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
• Insensitive to supply voltage ripple and noise

Block Diagram Application Circuit

16832 17170_5
R1
2 Transmitter IR Receiver
VS with VS + VS
30 kΩ TSALxxxx C1
Circuit

3 µC
OUT
Band Demo- OUT VO
Input AGC Pass dulator GND GND

1
PIN Control Circuit GND
R1 and C1 are recommended for protection against EOS.
Components should be in the range of 33 Ω < R1 < 1 kΩ,
C1 > 0.1 µF.

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Vishay Semiconductors

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating condtions for extended periods may affect the device reliability.
Parameter Test condition Symbol Value Unit
Supply voltage (pin 2) VS - 0.3 to + 6.0 V
Supply current (pin 2) IS 3 mA
Output voltage (pin 3) VO - 0.3 to (VS + 0.3) V
Output current (pin 3) IO 5 mA
Junction temperature Tj 100 °C
Storage temperature range Tstg - 25 to + 85 °C
Operating temperature range Tamb - 25 to + 85 °C
Power consumption (Tamb ≤ 85 °C) Ptot 10 mW
Soldering temperature t ≤ 10 s, 1 mm from case Tsd 260 °C

Electrical and Optical Characteristics

Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Min. Typ. Max. Unit
Ev = 0, VS = 3.3 V ISD 0.27 0.35 0.45 mA
Supply current (pin 2)
Ev = 40 klx, sunlight ISH 0.45 mA
Supply voltage VS 2.5 5.5 V
Ev = 0, test signal see fig. 1,
Transmission distance IR diode TSAL6200, d 45 m
IF = 250 mA
IOSL = 0.5 mA, Ee = 0.7 mW/m2, VOSL
Output voltage low (pin 3) 100 mV
test signal see fig. 1
Pulse width tolerance:
Minimum irradiance tpi - 5/fo < tpo < tpi + 6/fo, Ee min 0.15 0.35 mW/m2
test signal see fig. 1
tpi - 5/fo < tpo < tpi + 6/fo,
Maximum irradiance Ee max 30 W/m2
test signal see fig. 1
Angle of half transmission
Directivity ϕ1/2 ± 45 deg
distance

Typical Characteristics
Tamb = 25 °C, unless otherwise specified

Ee Optical Test Signal 1

(IR Diode TSAL6200, IF = 0.4 A, 30 Pulses, f = f0, T = 10 ms) Output Pulse Width
0.9
tpo - Output Pulse Width (ms)

0.8
0.7 Input Burst Length
t
tpi * 0.6
0.5
T
* tpi 10/f0 is recommended for optimal function 0.4

VO Output Signal 16110 0.3

λ = 950 nm,
1) 7/f0 < td < 15/f0 0.2
VOH Optical Test Signal, Fig.1
2) tpi - 5/f0 < tpo < tpi + 6/f 0 0.1
VOL 0
td1 ) tpo2 ) t 0.1 1 10 100 1000 10000 100000
20752 Ee - Irradiance (mW/m²)

Figure 1. Output Active Low Figure 2. Pulse Length and Sensitivity in Dark Ambient

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Vishay Semiconductors

Optical Test Signal

Ee 4

Eemin - Threshold Irradiance (mW/m²)

Correlation with Ambient Light Sources:
3.5 10 W/m² = 1.4 kLx (Std. illum. A, T = 2855 K)
10 W/m² = 8.2 kLx (Daylight, T = 5900 K)
3
t Wavelength of Ambient
600 µs 600 µs 2.5
Illumination: λ = 950 nm
T = 60 ms 2

94 8134 1.5
Output Signal, (see fig. 4)
VO
1
VOH
0.5
VOL 0
Ton Toff t
0.01 0.1 1 10 100

20757
Ee - Ambient DC Irradiance (W/m²)

Figure 3. Output Function Figure 6. Sensitivity in Bright Ambient

0.8 1

Ee min - Threshold Irradiance (mW/m²)

f = 100 Hz
Ton, Toff - Output Pulse Width (ms)

Ton
0.7 0.9
0.8
0.6 f = 10 kHz
0.7
0.5
0.6
Toff f = 20 kHz
0.4 0.5

0.3 0.4
f = 30 kHz
0.3
0.2
0.2 f = fo
λ = 950 nm,
0.1 Optical Test Signal, Fig. 3 0.1
0 0
0.1 1 10 100 1000 10000 1 10 100 1000
20759 Ee - Irradiance (mW/m²) 20753 VsRMS - AC Voltage on DC Supply Voltage (mV)

Figure 4. Output Pulse Diagram Figure 7. Sensitivity vs. Supply Voltage Disturbances

1.2 500
450
E - Max. Field Strength (V/m)

1.0
E e min /E e - Rel. Responsivity

400
350
0.8
300
0.6 250
200
0.4
150
f = f0 ± 5 % 100
0.2
Δ f(3 dB) = f0/10
50

0.0 0
0.7 0.9 1.1 1.3 0 500 1000 1500 2000 2500 3000
20747
16925 f/f0 - Relative Frequency f - EMI Frequency (MHz)

Figure 5. Frequency Dependence of Responsivity Figure 8. Sensitivity vs. Electric Field Disturbances

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Vishay Semiconductors

0° 10° 20°
1 30°
0.9
Max. Envelope Duty Cycle

0.8
0.7 40°
0.6 1.0
0.5 50°
0.9
0.4
0.8 60°
0.3
0.2 70°
0.7
0.1 80°
f = 38 kHz, Ee = 2 mW/m²
0
0 20 40 60 80 100 120 0.6 0.4 0.2 0 0.2 0.4 0.6
20828 Burst Length (number of cycles/burst) 95 11340p2 d rel - Relative Transmission Distance

Figure 9. Max. Envelope Duty Cycle vs. Burst Length Figure 12. Horizontal Directivity

0° 10° 20°
0.3 30°
Ee min - Threshold Irradiance (mW/m²)

0.25

0.2 40°
1.0
0.15 0.9 50°

0.1 0.8 60°

70°
0.05 0.7
80°
0
- 30 - 10 10 30 50 70 90 0.6 0.4 0.2 0 0.2 0.4 0.6
20755 Tamb - Ambient Temperature (°C) 95 11339p2 d rel - Relative Transmission Distance

Figure 10. Sensitivity vs. Ambient Temperature Figure 13. Vertical Directivity

1.2 0.2
S ( λ) rel - Relative Spectral Sensitivity

0.18
Ee min - Sensitivity (mW/m²)

1.0
0.16
0.14
0.8
0.12
0.6 0.1
0.08
0.4
0.06

0.2 0.04
0.02
0.0 0
750 850 950 1050 1150 2 2.5 3 3.5 4 4.5 5 5.5 6

16919 λ - Wavelength (nm)

20756 VS - Supply Voltage (V)

Figure 11. Relative Spectral Sensitivity vs. Wavelength Figure 14. Sensitivity vs. Supply Voltage

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Suitable Data Format

The HS0038A2 is designed to suppress spurious
output pulses due to noise or disturbance signals.
Data and disturbance signals can be distinguished by
the devices according to carrier frequency, burst

IR Signal
length and envelope duty cycle. The data signal
should be close to the band-pass center frequency
(e.g. 38 kHz) and fulfill the conditions in the table
below.
IR Signal from Fluorescent
When a data signal is applied to the HS0038A2 in the Lamp with Low Modulation
presence of a disturbance signal, the sensitivity of the
receiver is reduced to insure that no spurious pulses 0 5 10 15 20
are present at the output. Some examples of 16920 Time (ms)
disturbance signals which are suppressed are: Figure 15. IR Signal from Fluorescent Lamp
• DC light (e.g. from tungsten bulb or sunlight) with Low Modulation
• Continuous signals at any frequency
• Strongly or weakly modulated noise from
IR Signal from Fluorescent
fluorescent lamps with electronic ballasts (see Lamp with High Modulation
figure 15 or figure 16).

IR Signal

0 10 10 15 20
16921 Time (ms)
Figure 16. IR Signal from Fluorescent Lamp
with High Modulation

HS0038A2
Minimum burst length 10 cycles/burst
After each burst of length 10 to 70 cycles
A minimum gap time is required of 10 cycles
For bursts greater than 70 cycles
A minimum gap time in the data stream is needed of > 4 x burst length
Maximum continuous short bursts/second 1800
NEC code (repetitive pulse) yes
NEC code (repetitive data) yes
Compatible to RC5/RC6 code yes
Compatible to Sony code yes
Compatible to Mitsubishi code (38 kHz, preburst 8 ms, 16 bit) yes
Compatible to Sharp code yes
Toshiba Micom format yes
R-2000 code yes
And other codes

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Rev. 1.0, 08-Feb-08 5
HS0038A2
Vishay Semiconductors

Package Dimensions in millimeters

96 12116

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Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively.
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA.
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages,
and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated
with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

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Rev. 1.0, 08-Feb-08 7