Aligned nanowires for energy conversion: a case study of copper sulfide

Matthew T. Mayer and Dunwei Wang

Department of Chemistry, Boston College, Chestnut Hill, MA 02467
Nanomaterials, with features on the sub-micrometer scale, often
display unique properties. They interest researchers for their A new growth model discovered: Unusual electronic properties: NDR & RS
potential applications in important technologies. Advances in solar ionic vacancy diffusion growth of copper sulfide possible next-gen computing elements?
cells and batteries are urgently needed to support the global
(see X.H. Liu, M.T. Mayer, D.W. Wang, Angew. Chem., Int. Ed. 2010, 49, 3165) (see X.H. Liu, M.T. Mayer, D.W. Wang, Appl. Phys. Lett. 2010, 96, 223103)
energy demand, and nanomaterials offer the promise of efficiency
and performance improvements over conventional materials. Cu
Of particular interest are nanowires, structures which resemble H2S Polished Cu metal is exposed ZnO layer deposited over Cu2S
long and thin wires and offer improved optoelectronic properties
H2O to H2S gas and humid air nanowires as a photovoltaic
for use in advanced solar cells.
device prototype
O2
500 nm

Sulfur sublattice Reaction occurs at Electronic contact was made to

forms, Cu is fed via room temperature ZnO and the Cu substrate, and
Planar device: Nanowire device:
vacancy diffusion and pressure the behavior tested by sweeping
Thick layer improves Decouples the absorption and
absorption but reduces charge transport directions, allowing
the applied bias while recording
transport efficiency lateral carrier diffusion the current response

Vertical growth proceeds, Cu2S

layer fractures into columns The response: resistive switching (RS) and
Aligned nanowires:
various compounds, variety of methods negative differential resistance (NDR)

Anodic aluminum oxide template

Fe Result is single-crystalline
Iron nanowires electroplated into Cu2S, with distinct
pores of patterned template hexagonal shape
Ionic diffusivity of Cu within Cu2S
(Yongjing Lin and Guangbi Yuan, from 1 µm causes the effects
unpublished work) 1 µm

Si Vertical growth continues Positive bias forces Cu+ towards

Chemical etching while side-wall growth is the junction, destroying diode and
Crystalline Si wafer catalytically naturally suppressed lowering resistance
dissolved from the top down
1 µm
5 µm (Guangbi Yuan, unpublished) Negative bias pulls back excess
5 µm Cu+, restoring resistive state

Chemical vapor deposition Si Unique morphologies

sometimes occur, including
Vapor-liquid-solid growth, with Si screws, double-combs,
supplied as a gas and ultralong rods While the high mobility of Cu in Cu2S allows the simple synthesis
(see Guangbi Yuan, et al. Angew. Chem., Int. Ed. 2009,
48, 9680-9684) 10 µm
of aligned nanowire arrays, it also leads to unique electronic
behaviors which may hinder its use as a photovoltaic material.
1 µm However, these behaviors (NDR & RS) show promise as circuit
elements in the future field of nanocomputing.
Hydrothermal growth
ZnO nanowires grown by
This work funded by a Research Incentive Grant, Boston College
autoclave treatment of aqueous
Thanks to Xiaohua Liu, Guangbi Yuan, Yongjing Lin, Jin Xie, and
precursors 1 µm Zachary Simpson for their contributions
500 nm ZnO (Jin Xie, unpublished)