Bulletin I25170 rev.

B 04/00

ST333C..C SERIES
INVERTER GRADE THYRISTORS Hockey Puk Version
Features
Metal case with ceramic insulator
International standard case TO-200AB (E-PUK)
All diffused design 720A
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capability
Low thermal impedance
High speed performance

Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
case style TO-200AB (E-PUK)

Major Ratings and Characteristics

Parameters ST333C..C Units

IT(AV) 720 A

@ T hs 55 °C

IT(RMS) 1435 A

@ T hs 25 °C

ITSM @ 50Hz 11000 A

@ 60Hz 11500 A

I 2t @ 50Hz 605 KA2s

@ 60Hz 553 KA2s

V DRM/V RRM 400 to 800 V

tq range 10 to 30 µs

TJ - 40 to 125 °C

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ST333C..C Series
Bulletin I25170 rev. B 04/00

ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage VDRM /VRRM , maximum VRSM , maximum I DRM/I RRM max.
Type number Code repetitive peak voltage non-repetitive peak voltage @ TJ = TJ max.
V V mA
04 400 500
ST333C..C 50
08 800 900

Current Carrying Capability

ITM ITM ITM

Frequency Units
o
180oel 180 el 100µs

50Hz 1630 1420 2520 2260 7610 6820

400Hz 1630 1390 2670 2330 4080 3600
1000Hz 1350 1090 2440 2120 2420 2100 A
2500Hz 720 550 1450 1220 1230 1027
Recovery voltage Vr 50 50 50 50 50 50
V
Voltage before turn-on Vd VDRM VDRM V DRM
Rise of on-state current di/dt 50 50 - - - - A/µs
Heatsink temperature 40 55 40 55 40 55 °C
Equivalent values for RC circuit 10Ω / 0.47µF 10Ω / 0.47µF 10Ω / 0.47µF

On-state Conduction
Parameter ST333C..C Units Conditions

IT(AV) Max. average on-state current 720 (350) A 180° conduction, half sine wave
@ Heatsink temperature 55 (75) °C double side (single side) cooled
IT(RMS) Max. RMS on-state current 1435 DC @ 25°C heatsink temperature double side cooled

ITSM Max. peak, one half cycle, 11000 t = 10ms No voltage

non-repetitive surge current 11500 A t = 8.3ms reapplied
9250 t = 10ms 100% VRRM
9700 t = 8.3ms reapplied Sinusoidal half wave,
2 2
I t Maximum I t for fusing 605 t = 10ms No voltage Initial TJ = TJ max
553 t = 8.3ms reapplied
KA2s
428 t = 10ms 100% VRRM
391 t = 8.3ms reapplied
I 2 √t Maximum I2√t for fusing 6050 KA2 √s t = 0.1 to 10ms, no voltage reapplied

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 ST333C..C Series
Bulletin I25170 rev. B 04/00

On-state Conduction
Parameter ST333C..C Units Conditions
V TM Max. peak on-state voltage 1.96 ITM= 1810A, T J = TJ max, tp = 10ms sine wave pulse
V T(TO)1 Low level value of threshold
0.91 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
voltage V
V T(TO)2 High level value of threshold
0.93 (I > π x IT(AV)), TJ = TJ max.
voltage
rt 1 Low level value of forward
0.58 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
slope resistance
mΩ
r High level value of forward
t2 0.58 (I > π x IT(AV)), TJ = TJ max.
slope resistance
IH Maximum holding current 600 T J = 25°C, I T > 30A
mA
IL Typical latching current 1000 T J = 25°C, VA = 12V, Ra = 6Ω, I G = 1A

Switching
Parameter ST333C..C Units Conditions
di/dt Max. non-repetitive rate of rise TJ = TJ max, VDRM = rated VDRM
1000 A/µs
of turned-on current ITM = 2 x di/dt
TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, tp= 1µs
t Typical delay time 1.1
d Resistive load, Gate pulse: 10V, 5Ω source
µs
Min Max TJ = TJ max, ITM = 550A, commutating di/dt = 40A/µs
tq Max. turn-off time 10 30 VR = 50V, tp = 500µs, dv/dt: see table in device code

Blocking
Parameter ST333C..C Units Conditions
dv/dt Maximum critical rate of rise of TJ = TJ max. linear to 80% VDRM, higher value
500 V/µs
off-state voltage available on request
IRRM Max. peak reverse and off-state
50 mA T J = TJ max, rated V DRM/V RRM applied
IDRM leakage current

Triggering
Parameter ST333C..C Units Conditions
PGM Maximum peak gate power 60
W T J = TJ max., f = 50Hz, d% = 50
PG(AV) Maximum average gate power 10
IGM Max. peak positive gate current 10 A TJ = TJ max, tp ≤ 5ms

+VGM Maximum peak positive

gate voltage 20
V T J = TJ max, tp ≤ 5ms
-V GM Maximum peak negative
5
gate voltage
IGT Max. DC gate current required
200 mA
to trigger
T J = 25°C, V A = 12V, Ra = 6Ω
VGT Max. DC gate voltage required
3 V
to trigger
IGD Max. DC gate current not to trigger 20 mA
T J = TJ max, rated VDRM applied
VGD Max. DC gate voltage not to trigger 0.25 V

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ST333C..C Series
Bulletin I25170 rev. B 04/00

Thermal and Mechanical Specification

Parameter ST333C..C Units Conditions
TJ Max. operating temperature range -40 to 125
°C
T Max. storage temperature range -40 to 150
stg
RthJ-hs Max. thermal resistance, 0.09 DC operation single side cooled
K/W
junction to heatsink 0.04 DC operation double side cooled

RthC-hs Max. thermal resistance, 0.020 DC operation single side cooled

K/W
case to heatsink 0.010 DC operation double side cooled
F Mounting force, ± 10% 9800 N
(1000) (Kg)
wt Approximate weight 83 g

Case style TO - 200AB (E-PUK) See Outline Table

∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)

Sinusoidal conduction Rectangular conduction

Conduction angle Units Conditions
Single Side Double Side Single Side Double Side
180° 0.010 0.011 0.007 0.007
120° 0.012 0.012 0.012 0.013
90° 0.015 0.015 0.016 0.017 K/W TJ = TJ max.
60° 0.022 0.022 0.023 0.023
30° 0.036 0.036 0.036 0.036

Ordering Information Table

Device Code
ST 33 3 C 08 C H K 1

1 2 3 4 5 6 7 8 9 10

1 - Thyristor
2 - Essential part number
3 - 3 = Fast turn off
4 - C = Ceramic Puk
5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
6 - C = Puk Case TO-200AB (E-PUK) dv/dt - tq combinations available
7 - Reapplied dv/dt code (for tq test condition) dv/dt (V/µs) 20 50 100 200 400
8 - tq code 10 CN DN EN -- --
12 CM DM EM FM * --
9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads) 15 CL DL EL FL * HL
tq (µs)
1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads) 18 CP DP EP FP HP
20 CK DK EK FK HK
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads) 25 -- -- -- FJ HJ
30 -- -- -- -- HH
3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads)
10 - Critical dv/dt: *Standard part number.
All other types available only on request.
None = 500V/µsec (Standard value)
L = 1000V/µsec (Special selection)

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 ST333C..C Series
Bulletin I25170 rev. B 04/00

Outline Table

ANODE TO GATE
CREEPAGE DISTANCE: 11.18 (0.44) MIN.
STRIKE DISTANCE: 7.62 (0.30) MIN.

25.3 (0.99)

DIA. MAX. 0.3 (0.01) MIN.

14.1 / 15.1
(0.56 / 0.59)

0.3 (0.01) MIN.

25.3 (0.99)
GATE TERM. FOR
DIA. MAX. 1.47 (0.06) DIA.
PIN RECEPTACLE
40.5 (1.59) DIA. MAX.

2 HOLES 3.56 (0.14) x

1.83 (0.07) MIN. DEEP
6.5 (0.26)

4.75 (0.19)

Case Style TO-200AB (E-PUK)

25°± 5°
All dimensions in millimeters (inches)

Quote between upper and lower

pole pieces has to be considered
42 (1.65) MAX. after application of Mounting Force
(see Thermal and Mechanical
28 (1.10) Specification)
Maximum Allowable Heatsink Temperature (°C)

M a xim u m A llo w ab le H e a t sin k T e m p e ra t u re (°C )

130 1 30
ST333C..C Series ST 3 3 3 C ..C S e rie s
120 (Single Side Cooled) 1 20
(Sin g le S id e C o o le d )
110 R th J- hs (DC) = 0.09 K/W 1 10 R th J-hs ( D C ) = 0 .0 9 K / W
100 1 00
90 90
80 C o nd uc tio n A ng le 80 Co nd uc tio n P e rio d
70 70
60 60
50 30° 50
30°
40 60° 40 6 0°
90° 90°
30 120° 30 12 0°
180° 1 80° DC
20 20
0 100 200 300 400 500 600 0 10 0 2 00 30 0 40 0 5 00 6 0 0 70 0 80 0 9 00
Average On -state Current (A) A v e ra g e O n -st a te C u rre n t (A )
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

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ST333C..C Series
Bulletin I25170 rev. B 04/00

Maxim um Allowable Heatsin k Tem perature (°C)

M a xim u m A llo w a b le H e at sin k T e m p e ra t u re (°C )

130 130
ST 3 3 3 C ..C S e r ie s ST333C..C Series
120 (D o ub le Sid e C o o le d ) 120 ( Double Side Cooled )
110 R thJ-h s (D C ) = 0 .0 4 K /W 110 R th J-hs (DC) = 0.04 K/W
100 100
90 90
80
80 C o ndu ctio n Pe riod
70 C o nd uctio n A ng le
70
60
60 30°
50 30° 60°
40 60 ° 50 90°
90 °
30 40 120°
120° 30 180°
20
180° DC
10 20
0 2 00 4 00 60 0 800 1 00 0 0 200 400 600 800 1000 1200 1400 1600

A v e ra g e O n - st a t e C u rre n t (A ) Average O n-state Current (A)

Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics
M a x im u m A v e ra g e O n - st a t e P o w e r Lo ss (W )

2 2 00 26 0 0
M a x im um A v e r a g e O n - st a t e Po w e r L o ss (W )

2 0 00 24 0 0 DC
1 80°
22 0 0 180°
1 8 00 1 20°
20 0 0 120°
90°
1 6 00 90°
60° 18 0 0 60°
1 4 00 30° R M S Lim it 16 0 0 30° R M S L im it
1 2 00 14 0 0
1 0 00 12 0 0
8 00 10 0 0
C o ndu ctio n A ng le 800 C o ndu ctio n Pe rio d
6 00
600
4 00 S T3 3 3 C ..C Se rie s
ST 3 3 3 C ..C S e r ie s 400
2 00 TJ = 1 2 5 °C 200 T J = 1 2 5 °C
0 0
0 20 0 400 60 0 80 0 1 00 0 0 20 0 4 0 0 6 0 0 8 0 0 1 0 00 1 2 00 14 0 0 1 60 0
A v e ra g e O n -st a t e C u rre n t (A ) A v e ra g e O n -st a t e C u rre n t (A )
Fig. 5 - On-state Power Loss Characteristics Fig. 6 - On-state Power Loss Characteristics

10000 12000
Peak Half Sine Wave O n-state Curren t (A)
Peak Half Sine W ave O n-state Current (A)

At An y Rated L oad Con dition And W ith Maxim um Non Repetitive Surge Current
9500 Rated VRR M Applied Following Surge. V ersus Pulse Train Duration. C ontrol
In itial TJ = 125°C 11000
9000 O f Con duction May Not Be M ain tained.
@ 60 Hz 0.0083 s Initial TJ = 125°C
8500 10000
@ 50 Hz 0.0100 s No Voltage Reapplied
8000 9000 Rated VRR M Reapplied
7500
8000
7000
6500 7000
6000 6000
5500
ST333C..C Series 5000 ST333C..C Series
5000
4500 4000
1 10 100 0.01 0.1 1
N um b e r O f E q ual A m plitud e Half C yc le C urrent Pulse s (N ) Pulse T rain Duration (s)
Fig. 7 - Maximum Non-repetitive Surge Current Fig. 8 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled Single and Double Side Cooled

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 ST333C..C Series
Bulletin I25170 rev. B 04/00

10000 0 .1

T ran sie n t T h e rm a l Im p e d a n c e Z thJ-hs (K / W )

Instantaneous On-state Current (A)

S T3 3 3 C ..C Se r ie s

T = 25°C
1000 J 0 .0 1 S te a d y St a t e V a lu e
T = 125°C R th J-hs = 0 .0 9 K /W
J
(S in gle Sid e C o o le d )
R thJ-h s = 0 .0 4 K /W
(D o u b le S id e C o o le d )
ST333C..C Series (D C O p e ra t io n )

100 0 .0 0 1
0.5 1 1.5 2 2. 5 3 3. 5 4 4.5 5 5.5 6 6.5 0 .0 0 1 0 .0 1 0. 1 1 10
Instan tan eous O n-state V oltage (V) Sq u a re W a v e P u ls e D ur at io n (s)

Fig. 9 - On-state Voltage Drop Characteristics Fig. 10 - Thermal Impedance ZthJ-hs Characteristics

320 180
Maximum Reverse Recovery Charge - Q rr (µC)

M ax im u m R e v e rse R e c o v e ry C u rre n t - Irr (A )

I TM = 50 0 A I T M = 5 00 A
300
3 00 A 160 3 00 A
280 2 00 A 20 0 A
10 0 A 1 00 A
260 140
50 A 50 A
240
120
220
200 100
180
80
160
140 60 ST 3 3 3 C ..C S e rie s
ST333C..C Series TJ = 1 2 5 ° C
120
TJ = 125 °C 40
100
80 20
10 20 30 40 50 60 70 80 90 100 10 20 30 40 50 60 70 80 9 0 1 00
Rate O f Fall O f O n-state Current - di/dt (A/µs) R a te O f Fa ll O f Fo rw a rd C ur re n t - d i/ d t (A /µ s)

Fig. 11 - Reverse Recovered Charge Characteristics Fig. 12 - Reverse Recovery Current Characteristics

1 E4
P e a k O n -st a te C u rre n t (A )

50 0 4 00 20 0 1 00 50 Hz 4 00 20 0 1 00
50 0 50 H z
1 000 1 000
1 50 0
15 0 0
Snubb er c ircu it
25 00 Snubb er circ uit
1 E3 R s = 1 0 o hm s 2 50 0
R s = 1 0 o hm s
C s = 0 .47 µF
3 00 0 C s = 0.4 7 µF
V D = 80 % V D RM 3 00 0 V D = 80 % V D RM
50 00
ST33 3 C..C Serie s 5 00 0 ST33 3C ..C Serie s
Sin uso idal pulse Sinuso idal pulse
tp T C = 40°C tp T C = 55°C

1 E2
1 E1 1E2 1E3 1 E14E 41 E1 1E 1 1E2 1E3 1E4
P ulse B a se w id th (µ s) Pu lse B a se w id th (µ s)
Fig. 13 - Frequency Characteristics

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 ST333C..C Series
Bulletin I25170 rev. B 04/00

1E4
Snubbe r circ uit
R s = 1 0 o hm s
C s = 0.4 7 µF
P e a k O n - st a t e C ur re n t (A )

V D = 80 % V D RM
40 0 2 00 10 0 50 Hz
50 Hz
100 0 50 0 10 0
40 0 2 00
15 00 10 00 50 0
20 0 0 Snubbe r circuit
1E3 1 5 00
R s = 1 0 o hm s
2 5 00 20 00
C s = 0.47 µF
3 0 00 V D = 80 % V D RM 2 50 0
3 00 0 ST33 3C. .C Se ries
ST3 33 C.. C Se ries Trapezo idal p ulse
5 00 0 Trap ezo id al p ulse T C = 55 °C
TC = 4 0°C tp
50 00 di/dt = 1 00A /µs
tp di/d t = 50 A/µs
1E2
1 E1 1E2 1E3 1 E14E 41 E1 1E 1 1 E2 1 E3 1 E4
P u lse Ba se w id t h (µ s) P u lse Ba se w id th (µs)

Fig. 14 - Frequency Characteristics

1 E4
Snubbe r circ uit
R s = 1 0 o hm s
C s = 0.4 7 µF
P e a k O n - st a te C u rre n t (A )

V D = 80 % V DR M
5 0 Hz
4 00 200 10 0 4 00 2 00 10 0 5 0 Hz
5 00
100 0 50 0
15 00 10 0 0
1 E3 Snubb er c ircuit
20 00 R s = 10 o hm s 1 50 0
C s = 0 .47 µ F 20 00
2 50 0
V D = 80 % V D RM 2 50 0
3 00 0
ST33 3 C..C Serie s 3 00 0 ST333 C.. C Se ries
Trape zoidal pulse Trapezo id al p ulse
50 00 T C = 40°C TC = 55 °C
tp 5 00 0 tp
d i/dt = 100 A/µs di/dt = 10 0A /µs
1 E2
1 E1 1 E2 1E3 1 E14E 4 1 E11E 1 1E 2 1 E3 1 E4
P u lse B ase w id t h (µ s) P u lse Ba se w id th (µ s)
Fig. 15 - Frequency Characteristics

1E4
20 jo ule s pe r p ulse ST3 33 C Se ries
10 Rec tang ula r pulse 2 0 jou les p er pulse
5 10
3 di/dt = 50A /µs
tp
P e a k O n - sta t e C u rre n t (A )

2 5
1 3
1E3 2
0.5
1
0 .3
0 .5
0.2
0.4
0.3
1E2
0.2
ST33 3C ..C Se ries
Sinuso idal pulse
tp

1E1
1E1 1E2 1E3 1 E14E 4 1 E11E 1 1E2 1 E3 1E4
P u lse B ase w id t h (µ s) P u lse Ba se w id t h (µ s)
Fig. 16 - Maximum On-state Energy Power Loss Characteristics

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 ST333C..C Series
Bulletin I25170 rev. B 04/00

1 00
Re c t a n g ula r g a t e p u lse (1) PGM = 1 0W , tp = 20 m s
a ) R e c o m m e n d e d lo a d lin e fo r (2) PGM = 2 0W , tp = 10 m s
In st a n ta n e o u s G at e V o lt a ge ( V )

ra t e d d i/d t : 2 0 V , 1 0 o h m s; t r< =1 µ s (3) PGM = 4 0W , tp = 5m s

b ) Re c o m m e n d e d lo a d lin e f o r (4) PGM = 6 0W , tp = 3 .3 m s
< = 3 0 % ra te d d i/d t : 1 0 V , 1 0 o h m s
10 t r< =1 µ s (a )
(b )

Tj=- 40 °C
Tj=25 °C
Tj=12 5 °C
1
(1) (2) (3 ) ( 4 )
VGD

IG D
D e v ic e : ST 3 3 3 C ..C Se rie s Fre q u e n c y L im ite d b y P G (A V )
0 .1
0 .0 0 1 0 .0 1 0 .1 1 10 1 00
In sta n t a n e o u s G at e C u rr e n t ( A )

Fig. 17 - Gate Characteristics

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