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~ !D04 [J]
March 17-19,2009, Faculty of Engineering, Future Univ., Egypt

10 W Class AB Power Amplifier Design for UMTS Applications Using GaN

HEMT
Ahmed Sajjad, Ahmed Sayed, Ahmed Al Tanany, Georg Boeck
Microwave Engineering, Berlin University oJTechnology
EinsteinuJer 25, 10587 Berlin, Germany
Sajjad.giki @gmail.com, sayed@mwt.ee.tu-berlin .de

ABSTRACT

This paper exhibits a 10 W class AB highly linear power amplifier (PA) for a frequency of2.14 GHz using GaN
HEMT. Power and linearity measurements and simulations illustrate stupendous correspondence. An output
power of II W (41 dBm) with maximum drain efficiency (T]) of 72 % (PA E 56 %) is achieved. Linearity
measurements were made with a frequency spacing of 100 KHz and output third-order and second-order
intercept points (GIP3 and GIP2) were observed to be 48 dBm and 80 dBm respectively.

1. INTRODUCTION
In the ever growing world of advance communication standards, Power amplifiers (PAs) playa vital role in
performance and cost factor of a communication system. In the digital modulated wireless communication
systems (W-CDMA, GFDM) there has been an intensive challenge to improve the efficiency, linearity and
thermal characteristic of the PA. Among PA design to achieve all the conflicting goals an advanced transistor is
the primary necessity . GaN HEMT has made itself a strong contender in the application of the microwave
frequency systems due to its wide bandgap features of high electric breakdown field strength, hence high power
density, high electron saturation velocity and high operating temperature [1]-[3]. It is a very useful device for
wide band applications due to its high power density and it also attains high input and output impedance
comparing to other devices which in-tum makes matching easier [3]. Linearity is also one of the key issues in
multi carrier communication system where the carrier signals are closely spaced in frequency and it's suggested
that GaN HEMT address this requirement significantly [4].
For the last few years wide-band devices has been implemented using several classes and with different
performances. In [5] a 43 dBm output power with 13 dB power gain and 73 % PAE class EPA. In another work
a PAE of 74 % with 11.4 W output power and 12.6 dB power gain using class E [6]. Finally, class AlAB PA
using SiC achieved maximum PAE 66 % at 500 MHz and 24.9 dB power gain, with 44.15 dBm output power
(26 W) [7].
This paper introduces a class AB power amplifier at 2.14 GHz with Max. output power of 10 W, drain
efficiency (T]) of 72 % and output IP3 (GIP3) of 48 dBm.
Section 2 introduces the design parameters of this class in details. Measured and simulated small signal as
well as large signal performance are depicted in details in section 3. Finally, section 4 concludes the figure of
merits of this work.

2. DESIGN

This work is done using the Advanced Design System (ADS) from Agilent and 10 watts transistor model
from Eudyna.The first step in designing a power amplifier is determining the bias points which ultimately
determine the class of operation. In this work class AB bias points are chosen as shown in table I to achieve high
gain, high efficiency and linearity. The drain voltage Vos is set to 48 volts and the quiescent current los is set as
240 mA.
As it a narrow band design so for biasing a lambda quarter transmission line is used which gives complete
isolation at RF frequency. The large signal model for Eudyna transistor was used to extract the load and source
impedances as shown in Fig. 2 using the load/source-pull technique while shorting all the harmonics. Transistor
was made unconditionally stable by fulfilling the Rollet's stability criterion [8] (K> 1) and this was achieved by
using a combination of resistance and capacitance at the input. Conjugate matching for maximum transfer of
power was implemented using open shunt stub solution .

26"' NATIONAL RADIOSCIENCECONFERENCE, NRSC'2009

Future University, 5"'Compound, New Cairo, Egypt, March 17- 19,2009
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~ March 17-19,2009, Faculty of Engineering, Future Univ., Egypt

3. EXPERIMENTAL RESULTS

Comparison of simulations and measurements for small signal performance, power performance and linearity
of the power amplifier is discussed in this section. All these simulations and measurements were made at
2.14 GHz. Fig. 3 shows a prototype for the designed PA based on Rogers material R04003 with a dielectric
constant e, of 3.48 and thickness of 0.51 mm.

A. Small signal performance

Fig. 4 and Fig. 5 represent a comparison between simulated and measured small signal return loss and gain
and stability factor (K), respectively. Both diagrams show a strong agreement between the simulations and
measurements and table II concludes the achieved performances at 2.14 GHz.
B. Large signal performance

Large signal measurements were done using an RF signal generator in combination with high gain amplifier
as power source and a 1 dB compression point output power of37.2 dBm (max Pout = 41 dBm) and power gain
of 14.8 dBm along with drain efficiency 42.3 % (PAE 40.2 %) was achieved. Also we see in Fig. 6 that
maximum drain efficiency (11) of 72 % and PAE of 56 % comparing to that of simulation i.e. maximum drain
efficiency 74 % and PAE 59 %, it is observed that a good match between simulated and measured result has
been achieved. Fig 6 represents the PAE and output power over the frequency range of2.0 GHz to 2.24 GHz at a
drive input power of 29 dBm. The output power of 40 dBm (10 watts) at this point is noticed to be constant
along with the PAE (50 %). From these results it's concluded that an output power of 41 dBm (11 watts), power
gain of 14.3 dB, 72 % drain efficiency (11) at 35 dBm input power with a PAE of 56 % has been achieved.
Linearity which is also an integral characteristic for a power amplifier was also measured with conventional
two tones set up which includes a multi tone signal generator and a spectrum analyzer. Two signals of equal
amplitude with a frequency spacing of 100 KHz were applied to the power amplifier with input power sweep
ranging from of -20 dBm to 16 dBm. The fundamental second and third order components were detected on a
spectrum analyzer and the second and third order intercept points (OIP2 and OIP3) were calculated using the
equation [3-5].

OIPn =Pout + (harmonic suppression)/n-l (4)

where n is the harmonic order. From Fig. 9 we observe that an OlP3 and OlP2 of 48 dBm and 80 dBm
respectively have been achieved.

4. CONCLUSIONS

This paper presents a 10 W GaN HEMT amplifier for frequency of 2.14 GHz. Load pull measurements to
retrieve optimum load and source impedance for maximum output power and drain efficiency was performed
using customized model for GaN on ADS and microstrip open shunt stub matching network was implemented.
Small signal and larger signal performance over a frequency range of 2.04 GHz to 2.24 GHz has been presented
and discussed. Small signal gain of 14.2 dB and output return loss of -15 dB has been achieved. An output
power of 41 dBm (11 W) with a maximum efficiency (11) of 72 % (PAE = 56 %) is measured. Linearity
measurements were also carried out using conventional two tone signal at the input and OlP3 and OlP2 were
found to be 48 dBm and 80 dBm respectively.

REFERENCES

[1] A. Sayed, and G. Boeck, "5 W Highly Linear GaN Power Amplifier with 3.4 GHz Bandwidth," in Proc. 37th
European Microwave Conf., Germany, Munich, Oct. 2007.

26fu NATIONAL RADIO SCIENCE CONFERENCE, NRSC'2009

Future University, 5th Compound, NewCairo, Egypt, March 17-19,2009
 26t h NATIONAL RADIO SCIENCE CONFERENCE (NRSC2009)
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March 17-19,2009, Faculty of Engineering, Future Univ., Egypt
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[2] A. Sayed , and G. Boeck, "Two stage ultra wideband 5 W power amplifier using SiC MESFET ," in IEEE
Trans. on Microwave Theory Tech., vol. 53, pp. 2441-2449, July 2005.
[3] A. Zhang, L. Rowland, E. Kaminsky, 1. Kretchmer, V. Ti1ak, A. Allen, and B. Edward, "Performance of
AIGaN/GaN HEMTs for 2.8 GHz and 10 GHz power amplifier applications," in IEEE MTT-S Int.
Microwave Symp. Dig., vol. 1, June 2003, pp. 251-254.
[4] N. Ceylan, 1. Mueller, T. Pittorino, and R. Weigel, " Mobile phone power amplifier linearity and efficiency
enhancement using digital predistortion," 33 rd European Microwave Con f., Munich, Germany, vol. I,
Oct. 2003, pp. 269-272.
[5] Y-S. Lee, Y-H. Jeong; "A High- Efficiency Class- E GaN HEMT Power Amplifi er for WCDMA
Applications" IEEE Microwave and wireless component lett., vol. 17, NO.8, Aug 2007.
[6] H. G. Bae, R. Negra, S. Boumaiza, F. M. Ghannouchi; "High-efficiency GaN class- E power amplifier with
compact harmonic-suppression network" IEEE European Microwave Conference, 2007.
[7] S. Azam 1, R. Jonsson2, Q. Wahab 1; "Single-Stage, High Efficiency, 26- Watt Power Amplifier Using SiC
LE-M ESFET" IEEE Asia-Pacific Microwave Conference, 2006.
[8] D. Pozar, "Microwave Engineering", Third Edition, Danver MA, USA Wily, 2004.

2Vdd-Vknee
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2 ~
a.:
o
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>

o
o T/4 T/2 3T/4 T
Time
Fig. 1. IV curve for class AB.

26"' NATIONAL RADIO SCIENCECONFERENCE, NRSC'2009

Future University. S"Compound, NewCairo, Egypt, March 17- 19,2009
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March 17-19,2009, Faculty of Engineering, Future Univ., Egypt
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Fig. 2. Optimum impedance for output power and PAE efficiency.

Fig. 3. Prototype of the designed PA.

V DS [V] IDS [rnA] Zs[Q] ZL [Q]

48 240 3-i*9 6.201- i*4.8

Table.I. Quiescent point for optimum load and source impedances.

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 26t h NATIONAL RADIO SCIENCE CONFERENCE (NRSC2009)
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I D04 [JJ

S11rdBl S22rdBl Power Gain [dBl Stability factor (K)

Simulated -14 -8 16 1.5
Measured -17 -15 14.2 2.5

Table. II. Small signal gain and return losses with minimum stability factor.

0.-----.----.-----.-----.-----.------.----.----,--.---------,

co
~

••
C/)

•
C/)
o
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c
-10
••
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L..

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Q)
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. •
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•
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-15 •
--822.sirn
•
o 822 meas

-20 1---.-----.--------,..--------,..-------...-------.----.----.----.----1
1.5 1.7 1.9 2.1 2.3 2.5
f [GHz]
Fig. 4. Measured (symbols) and simulated (solid lines) return losses of the designed PA.

26"'NATIONAL RADIOSCIENCE CONFERENCE, NRSC'2009

Future University,5"'Compound,New Cairo, Egypt, March 17- 19,2009
 26t h NATIONAL RADIO SCIENCE CONFERENCE (NRSC2009)
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March 17-19,2009, Faculty of En gineering, Future Univ ., Egypt
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20
.--..
~
...........
L-
a
+-'

~ 15
LL
~
>-
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co
+-'

- 10
Cf)

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~
c 821 sun
.
·ro
C) 5 0 821 meas
Cf)
Cf) Ksun
.
0 Kmeas

0
1.5 1.7 1.9 2.1 2.3 2.5
f [GHz]

Fig. 5. Measured (symbol s) and simulated (solid lines) small signal gain and the stability factor (K) of the
designed PA over the desired frequency band.
t-'OUl .
meas

)
• Gain meas
Pout sim
Gain sim

••••••••••••••••••••• •••••
)

)-t---r-----,----r---r-----,----r---r-----t
o 10 20 30 40
Input Power [dBm]

Fig. 6. Output power and power gain over the swept input power: measurements (symbols),
26"'NATIONAL RADIO SCIENCE CONFERENCE, NRSC'2009
Future University, 5"'Compound,NewCairo, Egypt, March 17- 19, 2009
 26 th NATIONAL RADIO SCIE NCE CONFERENCE (NRSC2009)
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March 17-19,2009, Faculty of En gineering, Future Univ., Egypt
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simulations (so lid lines).

80
A
llmeas
D PAE meas
60 - - llsim
........ PAEsim
?fl.
........
o>-
c 40
Q)
'0
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w

20

o~~~~=;:::::"'--,.....--~--r-----r----r--~
o 10 20 30 40
Input Power [dBm]

Fig. 7. Measurements (symbols) and simulated (solid lines) results of the designed PA for drain efficiency (11)
and PAE.

26mNATION/* RADIO SCIENCE CONFERENCE, NRSC'2009

Future University, 5 Compound,NewCairo, Egypt, March 17- 19,2 009
 26t h NATIONAL RADIO SCIENCE CONFERENCE (NRSC2009)
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March 17-19,2009, Faculty of Engineering, Future Univ., Egypt

... T
-----~ ...
- -

- • • • • • • • • • • • -

... PAE meas

- • Pout me a s 1-

PAE srrn
.
Pout s im

I I

2.0 2.1 2.2 2.3

f [G Hz]

Fig. 8. Output power and PAE for a frequency range of200 MHz (2.04 GHz - 2.24 GHz).
J

OlP3 m - 48 dBm --------------

J

f= 2.14 GHz
J s f> 100 kHz
... P1
~ P2
• P3

J
-20 o 20 40 60 80
Input Power / tone [dBm]

Fig. 9. Second and third-order intercept points of the designed PA at 2.14 GHz with a frequency spacing of
100 kHz: measurements (symbols) and simulations (solid lines).
26th NATIONAL RADIO SCIENCE CONFERENCE, NRSC'2009
Future University, 5th Compound, NewCairo, Egypt, March 17- 19,2009