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Section 2.7 :
Ex. 2.7.4 : The resistivity of intrinsic silicon is 3 × 105 Ω -cm at 30°C. Calculate the intrinsic
concentration at 100°C. Assume the following data :
1. µ n = 0.13 m2 / V-sec. at 30°C
2. µ p = 0.05 m2 / V-sec at 30°C. .Page No. 2-23.
Soln. :
Step 1 : Intrinsic concentration ni at 30°C or 303°K :
To calculate ni at 303°K we are going to use the following equation :
σ i = ni ( µ n + µ p ) q ...(1)
But to calculate ni we need to find the value of σ i.
σ i = = = 3.33 × 10– 6 (Ω – cm)– 1
∴ σ i = 3.33 × 10– 4 (Ω – m)– 1 ...(2)
Hence intrinsic concentration,
ni = = 1.16 × 1016 per m3 at 303°K ...(3)
Step 2 : Intrinsic concentration at 100°C or 373°K :
To calculate ni at 373°K let us use the following equation (refer to Equation (2.11.9)) :
= Ao T3 e– EGO / kT ...(4)
where, EGO = 1.21 eV
k = Boltzmann's constant = 8.62 × 10– 5 eV / °K
and T1 = 303°K
∴ First of all let us calculate “Ao” by substituting the temperature to be 303°K and the value of ni
°
at 303 K from Equation (3).
∴ Ao =
= 6.37 × 1044 ...(5)
Ao is a constant the value of which does not depend on temperature.
So let us calculate “ni” at 373°K.
∴ ( ni )2 = Ao e– EGO / kT2
Basic Electronics (GTU) 2-2 Transport Phenomena in Semiconductors
Ex. 2.7.6 : Calculate the intrinsic carrier concentration of Silicon and Germanium at 400°K.
.Page No. 2-23.
Soln. : The value of Ao and EGO for the Silicon and Germanium are as follows :
Material Value of Ao EGO
Basic Electronics (GTU) 2-3 Transport Phenomena in Semiconductors
1. For Silicon :
× 10– 5 × 400
= 2.735 × 1031 × (400)3 e– 1.1 / 8.62
= 2.44 × 1025
∴ ni = 4.94 × 1012 per m3 ... Ans.
2. For Germanium :
× 10– 5 × 400
= 2.755 × 1030 × (400)3 e– 0.785 / 8.62
∴ = 2.2845 × 1028
∴ ni = 1.51 × 1014 per m3 ... Ans.
Comment :
At the same temperature, the intrinsic carrier concentration of Germanium is higher than that
of silicon.
Ex. 2.7.7 : The intrinsic concentration of Silicon at 400°K is 4.94 × 1012 / m3. Calculate its carrier
concentration at 500°K if EGO for silicon is 1.21 eV. .Page No. 2-23.
Soln. :
Given : ( ni )1 = 4.94 × 1012 / m3, EGO = 1.21 eV, T1 = 400°K
T2 = 500°K and K = 8.62 × 10– 5 eV / °K
To Find : ( ni )2 at 500°K
We know that,
= Ao T3 e– EGO / kT ...(1)
So
( ni1 )2 = Ao e– EGO / kT1 ...(2)
2 – EGO / kT2
and ( ni2 ) = Ao e ...(3)
Divide Equation (3) by Equation (2) to get,
=
=
= 2181.989
∴ ( ni2 )2 = 2181.989 × ( ni1 )2
= 2181.989 × ( 4.94 × 1012 )2 = 5.3248 × 1028
∴ ni2 = 2.3075 × 1014 / m3 ...Ans.
Comment :
Basic Electronics (GTU) 2-4 Transport Phenomena in Semiconductors
• The value of ni2 shows that the intrinsic concentration increases with increase in temperature.
Section 2.8 :
Ex. 2.8.2 : A sample of germanium is doped with 1014 / cm3 of donor impurity and 7 × 103 / cm3 of
acceptor impurity. Resistivity of pure Ge is 60 ohms-cm at room temperature. If the total
current density of the sample is 52 mA/cm2 determine the applied electric field.
(Assume : µ n = 3800 cm2 / V-s and µ p = 1800 cm2 / V-sec). .Page No. 2-27.
Soln. :
Given that,
Donor impurities, ND = 1014 / cm3
Acceptor impurities, NA = 7 × 1013 / cm3
Resistivity ρ of pure, Ge= 60 Ω -cm
Total current density, J = 52 mA/cm2
What is E ?
The total current density J is given by :
J = ( n µ n + p µ p ) qE ...(1)
In this equation we can substitute,
J = 52 mA / cm2, q = 1.6 × 10– 19 C, µ n = 3800 cm2 / V-sec and µ p = 1800 cm2 / V-sec.
But to obtain the value of “E” we must find the values of n and p.
Step 1 : To obtain the values of n and p :
For an intrinsic (pure) material, the conductivity is given by,
σ i = ni q ( µ n + µ p ) ...(2)
Also σ i = = = 0.0167 (Ω -m) –1
...(3)
Substitute this and other values in Equation (2) to get,
ni = = 1.86 × 1013 / cm3 ...(4)
ni is the intrinsic concentration.
Now use the mass action law to write,
n× p = ...(5)
Referring to Equation (2.6.3) we can write that,
p + ND = n + NA
∴ n – p = ND – NA
∴ Substituting the values we get, (n – p) = 1014 – 7 × 103 = 9.99 × 1013
or n = ( p + 9.99 × 1013 ) ...(6)
Substitute this into Equation (5) we get,
( p + 9.99 × 1013 ) p = = ( 1.86 × 1013 )2
∴ p2 + 9.99 × 1013 p = 3.46 × 1026
∴ p2 + 9.99 × 1013 p – 3.46 × 1026 = 0
Solving this quadratic equation we get,
Basic Electronics (GTU) 2-5 Transport Phenomena in Semiconductors
The majority carrier density ( ND ) as the phosphorous is a donor impurity can be calculated from
the following equation :
σ n = nn µ n q
OR
Basic Electronics (GTU) 2-7 Transport Phenomena in Semiconductors
σ n = ND µ n q ...(1)
We do not know σ n so let us calculate it.
To obtain σ n we will have to calculate resistivity ρ n.
Step 1 : To obtain the value of resistivity (ρ n ):
Resistance, R =
∴ ρ n =
Substituting the values we get,
∴ ρ n = = 0.12 Ω -m ...(2)
Step 2 : To obtain the value of conductivity ( σ n ) :
σ n = = = 8.33 (Ω -m)– 1 ...(3)
Step 3 : To obtain the value of ND :
From Equation (1) we can write that,
ND =
Substituting the values we get,
ND = = 3.719 × 1020 / m3 ...Ans.
Ex. 2.8.5 : Find the resistivity of intrinsic silicon. What will be the resistivity when the silicon is doped
with a pentavalent impurity to the extent of 1 impurity atom for each 108 atoms of silicon ?
Given for silicon :
1. Number of silicon atoms per cm3 = 5 × 1022
2. Intrinsic carrier concentration = 1.52 × 1010 / cm3 = 1.52 × 1016 / m3
3. Electron charge = 1.6 × 10– 19 Coulomb.
4. Electron mobility = 0.135 m2 / Volt-sec. Hole mobility = 0.048 m2 / V-s.
Resistivity of intrinsic silicon and after doping is to be obtained. .Page No. 2-28.
Soln. :
Step 1 : Resistivity of intrinsic silicon :
The conductivity of intrinsic silicon is given by,
σ i = ni ( µ n + µ p ) q ...(1)
Basic Electronics (GTU) 2-8 Transport Phenomena in Semiconductors
• Therefore the ratio of donor atoms to silicon atoms per unit volume = = 10– 8 ...Ans.
Ex. 2.8.7 : Derive an expression for conductivity of extrinsic semiconductor. Prove that the resistivity of
intrinsic germanium is 45 Ω -cm.
Basic Electronics (GTU) 2-9 Transport Phenomena in Semiconductors
= 26.752 (Ω -m)– 1
Step 3 : Resistivity of doped germanium :
ρ n = =
= 0.03738 Ω -m
= 0.03738 × 102 Ω -cm = 3.738 Ω -cm ...Ans.
Thus we have proved that the resistivity drops to 3.738 Ω -cm.
Ex. 2.8.11 : The intrinsic carrier concentration of silicon sample of 300° K is 1.5 × 1016 / m3. If after
doping, the number of majority carriers is 5 × 1020 / m3, calculate the minority carrier
density. .Page No. 2-29.
Soln. :
Given : ni = 1.5 × 1016 / m3 n = 5 × 1020 / m3 p=?
• Let the semiconductor after doping be n type. So the majority carriers will be electrons and minority
carriers will be holes.
• Using the law of mass-action we get,
= n× p
Basic Electronics (GTU) 2-12 Transport Phenomena in Semiconductors
∴ p =
= = 4.5 × 1011 / m3 ...Ans.
• This is the minority carrier density.
Ex. 2.8.12 : A sample of silicon of 1 cm length and 1 mm 2 cross-sectional area is doped with
Nd = 8 × 1015 cm– 3 at 27°C.
1. Calculate electron and hole concentrations.
2. If excess holes and electrons are generated with concentrations of
δ p = δ n = 1014 cm– 3 , determine the total concentrations of holes and electrons.
3. For the same semiconductor sample with excess charge carriers, calculate current
flowing through it if the voltage applied across its length is 2 V.
For silicon :
ni = 1.5 × 1010 cm– 3 µ n = 1400 cm2 / V-sec µ p = 500 cm2 / V-sec .Page No. 2-29.
Soln. :
Given : ni = 1.5 × 1010 per cm3, µ n = 1400 cm2 / V-sec
µ p = 500 cm2 / V-sec, l = 1 cm, a = 1 mm2
Part I : Electron and hole concentration :
Given : Nd = 8 × 1015 cm– 3 at T = 27°C or 300° K
• Since Nd >> ni we assume that the electron concentration n ≈ Nd
∴ n = Nd = 8 × 1015 electrons per cm3 ...Ans.
• Using the law of mass action we can write,
= n× p
∴ Hole concentration p = =
∴ p = 2.8125 × 104 holes per cm3 ...Ans.
Part II : Total concentration of electrons and holes :
• Due to the excess holes and electrons the electron and hole concentrations are,
nT = Nd + δ n = ( 8 × 1015 ) + 1014 = 8.1 × 1015 cm– 3
and pT = p + δ p
Section 2.9 :
Ex. 2.9.1 : An n-type silicon bar is used in Hall experiment has N D = 1013 / cm3, BZ = 0.2 Wb / m2 ,
d = 5 mm and E = 5 V/cm. What is the magnitude of Hall voltage VH ? .Page No. 2-31.
Soln. :
We know that the Hall voltage VH is given by,
Basic Electronics (GTU) 2-14 Transport Phenomena in Semiconductors
VH = ...(1)
Step 1 : To obtain the charge density “ρ ” :
Charge density “ρ ” = n × q = ND × q
∴ ρ = 1013 × 1.6 × 10– 19 = 1.6 × 10– 6 C/ cm3 ...(2)
Step 2 : To obtain the value of current density “J” :
Referring to Equation (2.9.4) we can write that,
J = ρ v ...(3)
Substituting v = Drift velocity = µ n E we get,
J = ρ µ nE
Assuming µ n = 1300 cm2 / V-sec we get,
J = 1.6 × 10– 6 × 1300 × 5 = 0.0104 Amp / cm2 ...(4)
Step 3 : To obtain the hall voltage VH :
Substitute Equations (2) and (4) into Equation (1) and substitute the values of “B” and “d” into
Equation (1).
B = 0.2 Wb / m2 = 0.2 × 10– 4 Wb/cm2
and d = 5 mm = 5 × 10– 1 cm
∴ VH =
∴ VH = 0.065 volts or 65 mV ...Ans.
Ex. 2.9.2 : The Hall experiment is used for a silicon bar known to be p-type. The resistivity of the bar is
220 × 103 Ω -cm . Width of the bar is 2 mm and distance between the two surfaces of the
bar is 2.2 mm. The magnetic field used has intensity of 0.1 Wb/m 2. If measured value of
current and Hall voltage are 5 micro-amp and 28 mV respectively calculate the mobility of
holes.
.Page No. 2-31.
Soln. :
Given : 1. ρ = 220 × 103 Ω -cm = 220 × 10 Ω -m . 2. d = 2.2 mm = 2.2 × 10– 3 m.
3. w = width = 2 mm = 2 × 10– 3 m. 4. B = 0.1 Wb/m2,
5. I = 5 µ amp = 5 × 10– 6 Amp 6 VH = 28 mV = 28 × 10– 3
Volts
Step 1 : To calculate the mobility of holes :
Mobility µ = σ RH ...(1)
Where, σ = Conductivity and RH = Hall coefficient.
We do not know both these values so let us find them.
Step 2 : Conductivity ( σ ) :
Conductivity, σ = =
= 4.54 × 10– 4 (Ω -m)– 1 ...(2)
Step 3 : To find the Hall coefficient ( RH ) :
RH = ...(3)
Basic Electronics (GTU) 2-15 Transport Phenomena in Semiconductors
Section 2.13 :
Ex. 2.13.1 : The hole concentration in a semiconductor specimen is shown in Fig. P. 2.13.1(a). Find the
expression and sketch the hole current density Jp (x) for the case in which there is no
externally applied electric field. .Page No. 2-42.
Fig. P. 2.13.1(a)
Soln. : As there is no externally applied field, we are expected to obtain the expression for the
diffusion hole current density Jp (x). Refer to section 2.12.2 for the derivation. We get the following
expression for Jp (x).
Jp (x) = – q Dp ...(1)
The negative sign indicates that the concentration “p” decreases with increase in “x”. We can
obtain the value of as follows :
= for 0 ≤ x ≤ W
= 0 for x > W …(2)
Substitute Equation (2) in Equation (1) to get,
Jp (x) = – q Dp for 0 ≤ x ≤ W
= 0 for x > W
This is the required expression for the hole current density.