Solid State Physics Lab PES 415 / PHYS 515 Spring 2005

ELLIPSOMETRY

Ellipsometry provides information on the optical properties (index of refraction, n, and extinction
coefficient, k) of materials by reflecting monochromatic polarized light off of a sample and examining
the change in the polarization of the light caused by the reflection. In this experiment we will use an
automated rotating analyzer ellipsometer to measure film thickness and optical properties.

The basic components of an ellipsometer are indicated in Figure 1. The light source is often a HeNe
laser (λ=6328 Å). It must be some type of monochromatic light source. High intensity, however, is
not needed. The monochromatic light passes through a polarizing prism which results in linearly
polarized light. This light is now reflected off of the sample which we wish to study. The sample
should be very smooth to get a good reflection. The polarization of the light is changed by the
reflection so it is now elliptically polarized. The reflected polarized light is then passed through
another prism which is rotating about the axis of the light and finally onto a photodetector. The output
of the photodetector is displayed on a meter.

light source
detector

polarizer analyzer

Sample
Intensity

analyzer angle

Computer

Figure 1. Rotating analyzer ellipsometer configuration.

Two geometric considerations enter into the calculations. The first is the angle of incidence of the
reflected light. A value around 70˚ from the normal gives the greatest sensitivity and is usually chosen.
For more complicated systems, measurements may be taken at several different angles to provide
additional information. The other geometric issue is that the sample must be positioned directly on the
optical axis of the ellipsometer. If the sample is too high or too low it will change the effective angle of
incidence causing an error in the measurements.

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Automatic rotating analyzer ellipsometer

The automatic rotating analyzer ellipsometer is similar in basic components to a manual ellipsometer.
The compensator, however, is generally not needed except for measuring thicker films. The polarizer
is set to a fixed value of 45˚ and the analyzer is continuously rotated at about 1 revolution per second.
Thus we have fixed, linearly polarized light incident on the sample. The reflected light will have some
elliptical polarization. This light passes through the rotating analyzer and strikes the photodetector. As
the analyzer rotates, the intensity of the light at the photodetector varies as a sine wave. A Fourier
analysis of this sine wave can be used to find the values of the ellipsometric parameters.

To make a measurement, allow the instrument to warm up for 2-3 hours for maximum accuracy
(although acceptable answers can usually be generated after about 30 minutes). To turn the equipment
on turn the key on the laser power supply on the left end of the table. The ellipsometer is set up
using a HeNe laser source (6328 Å), an angle of incidence of 70˚, and 45˚ linearly polarized incident
light (P=45˚). The sample can be clamped to the sample holder using two magnetic strips. Be careful
not to get fingerprints on the part of the sample which you will be analyzing.

Next check the alignment of the sample. As you rotate the sample holder, the laser spot on the sample
should not move across the sample. Adjust the front-back position of the sample holder until the laser
spot is approximately stationary when the sample holder is rotated. Now check for the position of the
reflected beam from the analyzer (which will be a small rotating oval). You may need to turn out the
room lights to see the reflected beam. It should be on top of the incident laser spot. If not, adjust the
front-back position and the rotation so that the two spots coincide and the beam reflected from the
sample is passing through the center of the aperture in front of the analyzer.

Now we need to check the electronics for saturation and zero. The photodetector signal goes into the
electronics box with the large meter to the right of the ellipsometer. Set the switch on the back of the
analyzer to "AS". Rotate the analyzer by hand and watch the signal on the meter. Set the RANGE
switch so that the signal never exceeds 5 (mid-scale) on the meter. Now block the light going into the
analyzer with your hand. Check the zero reading on the meter. It should be set to be slightly above
zero on the scale. Adjust the ZERO dial if needed. Set the switch on the back of the analyzer back to
"A" so that the analyzer rotates automatically.

The computer controls the ellipsometer data acquisition. The program can be run by typing in
ELLIPSE on the terminal. You may wish to repeat the measurement three of four times at any point
on the sample for better statistics. Occasionally a glitch in the electronics will give you a reading which
is significantly off from the others.

Analysis of the elipsometric parameters

These ellipsometric parameters, ∆ and Ψ, describe the change in the polarization of light when
reflected off the sample. We need to relate this change in polarization to the optical properties of the
material. The simplest case to consider is reflection from a clean, flat, perfectly transparent surface. In
this case, application of the electromagnetic boundary conditions requiring that the tangential
components of the electric field and magnetic H field be continuous leads to the Fresnel formulas for
the reflected wave [1,2,3].

rp =

rs =

where rp and rs are the reflection coefficients of the components of the reflected wave parallel and
perpendicular to the plane on incidence, n0 and n1 are the refractive indices of the ambient (air) and

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the sample, and φ is the angle of incidence as shown in Figure 2.

φ n
o

n1
θt

Figure 2. Geometry of light at an interface.

It can be shown that the ellipsometric parameters are related to the reflection coefficients by

tanΨ ei∆ = rp/rs

From these equations we now have a relationship between the ellipsometric parameters which we
measure and the properties of the surface, assuming the angle of incidence is known.

We can generalize this expression to reflection from a sample which absorbs light (as most materials
do). Maxwell's equations for electromagnetic fields in an absorbing medium are identical in form to
those in a transparent medium if the dielectric constant, ε, and the index of refraction, n, are taken to be
complex quantities [1,2].

The results on transparent surfaces are, therefore, still valid if the index of refraction of the surface, n1,
is treated as a complex number:
n1 = n - ik
= n - inκ
where n is the real index of refraction, k is the extinction coefficient, and κ is the absorption index.
The choice of a minus sign in the definition of the complex index of refraction in conventional in
optics. ( A plus sign is conventional in other areas of physics).

An equivalent way of describing these properties is in terms of the complex dielectric constant, ε,
ε = ε' - iε"
Again, the minus sign is in accordance with the optics convention. The real and imaginary parts of the
dielectric constant are related to n and k, for materials with relative magnetic permeability µ=1, by
ε' = n2 - k2
ε" = 2nk
After considerable algebra (left as an exercise for the fanatic), we can establish relationships between n
and k and the ellipsometric parameters Ψ and ∆.

n2 = 0.5 [ √(G2 - E2 + sin2φ)2 + 4G2E2 + (G2 - E2 + sin2φ)]

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 k2 = 0.5 [ √(G2 - E2 + sin2φ)2 + 4G2E2 - (G2 - E2 + sin2φ)]

where
G = [sinφ tanφ cos2Ψ] / [1 + sin2Ψ cos∆]

E = [sinφ tanφ sin2Ψ sin∆] / [1 + sin2Ψ cos∆]

This model assumes flat, clean surfaces. Ellipsometry is very sensitive to films on the surface. Even
films a few Å thick can effect the measured ellipsometric parameters. The flatness of the surface can
also change the results.

We have two Si wafers with SiO2 layers on them. One has about 990Å of oxide and the other has
about 6530Å of oxide. Measure the values of Psi and Delta for both samples on both ellipsometers.
Determine the thickness and optical properties of the SiO2 layers. You can use tables, graphs, or the
computer to determine these values.

If you are using the tables which are available, you may not find tables which exactly match both the
index and thickness expected for your sample. The best approach is to use the tables to construct
graphs of ∆ vs. Ψ. Use values from the tables which bracket the thickness and refractive index values
which you expect for your data. The resulting graph will look something like Figure 3 (although this
figure was constructed for Si nitride films with an index around 2.0 and a thickness around 350Å).
From such a graph you can see what thickness and index would correspond to the values of psi and
delta which you measured.

References:

1. D. J. Griffiths, "Introduction to Electrodynamics", 2nd ed. (Prentice Hall, Englewood Cliffs,

NJ, 1989).

2. J. D. Jackson, "Classical Electrodynamics", 2nd ed. (John Wiley and Sons, Inc., New York,
1975).

3. M. Born and E. Wolf, "Principles of Optics", 5th ed. (Pergamon Press, Oxford, 1975).

Ellipsometry Web Sites

1. Null ellipsometry - theory

http://www.onramp.tuscaloosa.al.us/~ddesmet/bk/closlook.html

2. Spectroscopic ellipsometry - theory and practice, optical properties

http://www.sopra-sa.com/ellipso.htm

3. Ellipsometry on the Web - data analysis, references (old)

http://www.afep.cornell.edu/ellipsometry.html

4. Ellipsometry site - description, references (old)

http://www.vuw.ac.nz/~db/bes/bes.html

5. Ellipsometer description - optical data, problems

http://ece-www.colorado.edu/~bart/book/ellipsom.htm