208 IEEE TRANSACTIONS ON INDUSTRY AND GENERAL APPLICATIONS, VOL. IGA-7, NO.

2, MARCH/APRIL 1971

Design of a High-Power Zener Diode and Its Energy

Absorption Capability
S. E. MILLER, JAMES E. REYNOLDS, MEMBER, IEEE, AND JAMES R. WASHBURN

Abstract-The structure and performance of a high-power zener achieved with shallow angle tapering through the junc-
diode to be used for transient suppression or voltage regulation are tion, with subsequent etching and edge coating.
described. A technique for accurately determining the energy A cross-sectional view of the device structure is given in
absorption capability for pulse durations down to 10 Ms is also de- Fig. 1. A p-type Czochralski silicon element of about 0.1-
scribed and used in rating the device.
Q cm resistivity, with 1000-2000 dislocation/cm2, is
phosphorus diffused. No enhancement layer is used.
DESIGN The silicon is alloyed between tungsten plates. The
THE MAJOR design problem consists in obtaining sandwich is then bonded to Cu terminals using Au-Ge.
uniform avalanching which is tantamount to ob- The taper through the junction is about 100 from the
taining a uniform microplasma distribution in the junc- horizontal. After etching, varnish protection is afforded
tion. Segregation of microplasmas will lead to hot spots by DC-643. Encapsulation is completed by cold welding
and may degrade the junction. Three of the chief factors in a DO-9 package (Fig. 2).
in achieving uniformity are as follows.
1) Radial Resistivity Gradient: Uniform doping of the CHARACTERISTICS
base silicon is desirable for uniform avalanching. Since Nominal values of Vz, IR, ZZT, and VFM are shown in
doping gradients cannot be completely eliminated in Table I for a 36-V (minimum) device.
either float zone or Czochralski silicon, it is preferable Power Derating for DC Regulation: This device may be
that the higher doping lie toward the center. This distri- used either for voltage regulation in a dc mode or as a
bution ensures that avalanching will occur first in the transient suppressor. A total power derating curve is
central region, helping to prevent surface breakdown. given in Fig. 3. This power is the maximum allowable for
2) Dislocation Density: Lattice strain results in dis- any combination of reverse-forward operation at the
locations which contribute to the energy available for indicated case temperatures.
ionization. Device performance requires either an abun-
dance of uniformly distributed dislocations or none at all. HEAT DISSIPATION
Evidence substantiating these requirements is found in The heat dissipation capabilities of zener diodes must
the literature [1]- [3]. be known in order to design networks for the absorption
3) Surface Control: It is necessary to treat the surfaces of transient energy. Tests show that this zener diode can
so that breakdown will not occur at the surface before it absorb 4.3 kW for 50 ms. Absorption capabilities for
occurs in the bulk. Adequate control of breakdown is shorter time periods, from about 1 ms down to 10 ,us,
are difficult to measure directly. Here, thermal impedances
Paper 71 TP 2-IGA, approved by the Power Semiconductor Com- determined by an analog computer have been used to
mittee of the IEEE IGA Group for publication in this TRANSAC- predict power absorption as a function of pulse duration
TIONS. Manuscript received January 20, 1971.
S. E. Miller and J. E. Reynolds are with Delco Electronics Divi- for pulses down to 10 ,us. It was shown that reliable
sion, General Motors Corporation, Kokomo, Ind. operation may be expected for at least 500 pulses at the
J. R. Washburn is with Semiconductor Products Division,
Motorola, Inc., Phoenix, Ariz. rated power absorption capability.
MILLER et al.: HIGH-POWER ZENER DIODE 209

TABLE I

Vz at 0.25 A, 30°C 36 V minimum

I.e at 32 V, 30°C 5 mA maximum
at 32 V, 150°C 15 mA maximum
ZZT (dynamic impedance) at Iz = 2.3 A 0.15 51
VFM at IFm = 800 A,
T. = 1750C 1.0 V
eOc (steady state) 0. 18°C/W

DC Mode

Fig. 1. Device structure.

200.

10I"
100*

D so o10 150 175

Case Temperature, IC
Fig. 3. Total power derating curve.

TemP
-X
-.002 0 +.002 °

I
C}N
Junction

Fig. 2. Completed assembly. Fig. 4. Temperature profile for 20-,us pulse in infinite length of
silicon.

ANALOG TREATMENT where To is the initial temperature, the appropriate solu-

Mathematical Model tion to (1) for unidirectional heat flow from a planar source
of heat after Jakob [4, p. 258] is
Assuming an infinite silicon cylinder with the p-n
junction plane as the heat generator, Fourier's equation
becomes unidirectional: -To = (CV\at)u {(2/Vfir)
(exp u2) du -

aT/at = a(a2T/0x2) (1)

where + [(exp - U2)//lr u]- 1} (2)
T absolute temperature where
t time
x distance from p-n junction u = x/2V/oat.
a thermal diffusivity.
Equation (2) allows the temperature gradient to be
For the boundary conditions of no peripheral heat loss calculated as a function of distance from the heat source.
and Such a calculation shows that the diffusion of heat in
T = To at t = 0
about 20 ,us or less is restricted to 4 0.002 in from the
p-n junction (see Fig. 4). Since the junction is of the
T = T at x 4
order of 0.002 in from the silicon surface in an actual
aT/ax = -C, at x = 0 device, the heat is contained within the silicon and the
210 IEEE TRANSACTIONS ON INDUSTRY AND GENERAL APPLICATIONS, MARCH/APRIL 1971

preceding model is quite rigorous. The model is also use-

able with small error up to about 10 ms.
Construction and Calibration of Analog
With validity of the model shown, an analog computer
[4, p. 409] was constructed, a schematic of which is shown
in Fig. 5. For additional information on the structure of Fig. 5. Zener diode analog circuit.
the device see Fig. 1. Note the intermediate nodal point
in the network representing the p-n junction.
It can also be shown from (2) that
TJ- TO = constant /t (3) 01
U
<)
where c
0

TJ junction temperature E 30j

-a0.
t duration of pulse. E
'
*

By placing a variable resistor and a variable capacitor I-

50.o00
at the junction node and making appropriate adjust- c
._
WD
ments, the analog circuit was calibrated with a 20-,us c
0

pulse to give the parabolic TJ excursion indicated in (3).

Transient Thermal Impedance 0Jc(t) 10 16o 000 ,0.o00 10,000
Electrical energy pulses were injected at the nodal Duration of Square Wave , t (ps)
point in the analog circuit corresponding to the p-n Fig. 6. DC junction to case transient thermal impedance 0JC(t).
junction in the zener diode. Hence the voltage gradients
generated in the analog circuit represent temperature
gradients in the zener diode. Using the AT information
with the heat energy derived from its equivalent electrical
energy, thermal impedance was calculated, and values are
given in Fig. 6. Ito
Transient Energy Absorption Capabilities
An important reference point was established by pulsing 0.
35 zener diodes 500 times each with 4.3 kW for 50 ms. 0
0-
A 10-s rest period was allowed between pulses for thermal 0
recovery. One failure occurred at 169 cycles. 0

To allow this reliability to be related to pulses shorter a.-

than 50 ms, it was assumed that reliability is limited by
the maximum junction temperature; this maximum is
identical with a TJ(max) found experimentally for 50-ms 10 100 1000 10,000 100.000

pulses. Maximum allowable power was then calculated Duration of Square Wave, t (ps)
from Fig. 7. Peak reverse power rating for variable pulsewidth.

P(max)(W) = TJ(max) (OC) (4)

6JC(t) (0C/W) TABLE II
The resulting data are plotted in Fig. 7 and give the
Test Conditions Failures
engineer a zener diode performance curve around which
transient suppressor networks can be designed. Pulse; 120-A reverse, 1 at 169
500 cycles, 50-ms square wave, cycles
Operating life and environmental tests are listed in 35 units 10-s intervals
Table II. Other tests passed included thermal shock Half-wave 1750C, none
(-550C to +1000C, 5-min soak) for 5 cycles, moisture blocking life; 500 h,
resistance as per MIL Std 202B-106A, mechanical shock, 80 units 29 V
and vibration. Temperature -65°C to +150'C none
cycling; for 10 cycles;
Previously, the usage of single zener diodes has been 15 units 1-h soak
limited to fairly small loads. The zener diode device
MILLER et al.: HIGH-POWER ZENER DIODE 211

described here is satisfactory for suppression of transients REFERENCES

such as those encountered in tactical radios. It is now
being produced for military tracked vehicles. This ap-
plication has been described by Reich [5], [6].
ACKNOWLEDGMENT
The authors would like to thank G. M. Morgan for
considerable help in the analog computer work.
[1] A. G. Chynoweth and G. L. Pearson, J. Appl. Phys., vol. 29,
1958, p. 1103.
[21 B. Senitzky and J. L. Moll, Phys. Rev., vol. 110, 1958, p. 612.
[3] R. L. Batdorf et al., J. Appl. Phys., vol. 31, 1960, p. 1153.
[4] M. Jakob, Heat Transfer, vol. 1. New York: Wiley, 1949.
[5] B. Reich, "Zener diodes quell power-supply transients," Electro-
Technol., Jan. 1968, p. 71.
[6] -, "Protection of semiconductor devices, circuits, and
equipment from voltage transients," Proc. IEEE, vol. 55,
Aug. 1967, pp. 1355-1361.

S. E. Miller was born in Beecher City, Ill., on September 28, 1933. He received the B.S.
degree in physics and mathematics from Eastern Illinois University, Charleston, in 1960
and the M.S. degree from Purdue University, Lafayette, Ind., in 1971.
He was employed by the P. R. Mallory Semiconductor Division as a quality control and
production control engineer. Since 1961 he has been with Semiconductor Device Engineering
at Delco Electronics Division, General Motors Corporation, Kokomo Ind.

James E. Reynolds (A'56-M'61) received the B.S. degree from the University of Alabama,
University, in 1944, the M.S. degree from the University of Missouri, Rolla, in 1947, and the
D.Sc. degree from the Massachusetts Institute of Technology, Cambridge, in 1953, all in
metallurgical engineering.
In 1944 he taught in the ASTP program at the University of Alabama. After two years in
Naval Electronics, he became Plant Metallurgist for the Continental Gin Company, Bir-
mingham, Ala., and then served for one year as an Instructor in the Department of Metallurgy
at the Missouri School of Mines. He was awarded an instructorship and several scholarships
while attending M.I.T., where he also taught naval officers in post graduate work. From 1953
to 1956 he worked at Battelle Memorial Institute on diffusion in titanium and the corrosion_
of nuclear fuel elements. He was in semiconductor work as Product Manager, Rectifier
Diffusion Department, Mororola, Inc., Phoenix, Ariz., and Manufacturing Superintendent,
Westinghouse Semiconductors, Youngwood, Pa., before joining Delco Electronics Division,
General Motors Corporation, Kokomo, Ind., in 1963. He is now in charge of the research,
development, and production assistance activities for rectifiers, thyristors, and zener diodes.
Dr. Reynolds is a member of Sigma Xi.

James R. Washburn was born in Marion, N. C., on July 20, 1940. He received the B.S. degree
in applied physics from North Carolina State University, Raleigh, in 1964.
In 1965 he joined the Delco Radio Division, General Motors Corporation, Kokomo Ind.,
as a Physicist in semiconductor research and development. His principal activities were in
methods of characterization of silicon power rectifiers, transient heat absorption, and semi-
conductor surface studies. Since 1969, he has been with the Semiconductor Products
Division, Motorola, Inc., Phoenix, Ariz., where his responsibilities have been in thyristor
diffusion and wafer processing.