BPW96

Vishay Telefunken

Silicon NPN Phototransistor

Description
BPW96 is a high speed and high sensitive silicon NPN
epitaxial planar phototransistor in a standard T–1¾
(ø 5 mm) package. Due to its waterclear epoxy the de-
vice is sensitive to visible and near infrared radiation.
The viewing angle of ± 20° makes it insensible to ambi-
ent straylight.

Features
D Fast response times
D High photo sensitivity
D Standard T–1¾ (ø 5 mm) clear plastic package
94 8391
D Angle of half sensitivity ϕ = ± 20°
D Suitable for visible and near infrared radiation
D Selected into sensitivity groups

Applications
Detector in electronic control and drive circuits

Absolute Maximum Ratings

Tamb = 25_C
Parameter Test Conditions Symbol Value Unit
Collector Emitter Voltage VCEO 70 V
Emitter Collector Voltage VECO 5 V
Collector Current IC 50 mA
Peak Collector Current tp/T = 0.5, tpx10 ms ICM 100 mA
Total Power Dissipation Tamb x47 °C Ptot 150 mW
Junction Temperature Tj 100 °C
Storage Temperature Range Tstg –55...+100 °C
Soldering Temperature t x3s Tsd 260 °C
Thermal Resistance Junction/Ambient RthJA 350 K/W

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Basic Characteristics
Tamb = 25_C
Parameter Test Conditions Symbol Min Typ Max Unit
Collector Emitter Breakdown IC = 1 mA V(BR)CE 70 V
Voltage O
Collector Dark Current VCE = 20 V, E = 0 ICEO 1 200 nA
Collector Emitter Capacitance VCE = 5 V, f = 1 MHz, E = 0 CCEO 3 pF
Angle of Half Sensitivity ϕ ±20 deg
Wavelength of Peak Sensitivity lp 850 nm
Range of Spectral Bandwidth l0.5 620...980 nm
Collector Emitter Saturation Ee = 1 mW/cm2, VCEsat 0.3 V
Voltage l = 950 nm, IC = 0.1 mA
Turn–On Time VS = 5 V, IC = 5 mA, ton 2.0 ms
RL = 100 W
Turn–Off Time VS = 5 V, IC = 5 mA, toff 2.3 ms
RL = 100 W
Cut–Off Frequency VS = 5 V, IC = 5 mA, fc 180 kHz
RL = 100 W

Type Dedicated Characteristics

Tamb = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
g Current Ee=1mW/cm2,
Collector Light BPW96A Ica 1.5 2.5 4.5 mA
l=950nm, VCE=5V BPW96B Ica 2.5 4.5 7.5 mA
BPW96C Ica 4.5 8 15 mA

Typical Characteristics (Tamb = 25_C unless otherwise specified)

200 104
P tot – Total Power Dissipation ( mW )

I CEO – Collector Dark Current ( nA )

160
103

120 VCE=20V
RthJA
102
80

101
40

0 100
0 20 40 60 80 100 20 40 60 80 100
94 8300 Tamb – Ambient Temperature ( °C ) 94 8304 Tamb – Ambient Temperature ( °C )

Figure 1. Total Power Dissipation vs. Figure 2. Collector Dark Current vs. Ambient Temperature
Ambient Temperature

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C CEO – Collector Emitter Capacitance ( pF )

2.0 10
I ca rel – Relative Collector Current

1.8
VCE=5V 8
f=1MHz
1.6 Ee=1mW/cm2
l=950nm 6
1.4

1.2 4
1.0
2
0.8

0.6 0
0 20 40 60 80 100 0.1 1 10 100
94 8239 Tamb – Ambient Temperature ( °C ) 94 8301 VCE – Collector Emitter Voltage ( V )

Figure 3. Relative Collector Current vs. Figure 6. Collector Emitter Capacitance vs.
Ambient Temperature Collector Emitter Voltage

10 8

t on / t off – Turn on / Turn off Time ( m s )

Ica – Collector Light Current ( mA )

BPW 96 B
BPW 96 C
VCE=5V
6 RL=100W
1 l=950nm
BPW 96 A 4

0.1 toff
2
VCE=5V
l=950nm ton

0.01 0
0.01 0.1 1 10 0 2 4 6 8 10 12 14
94 8296 Ee – Irradiance ( mW / cm2 ) 94 8293 IC – Collector Current ( mA )

Figure 4. Collector Light Current vs. Irradiance Figure 7. Turn On/Turn Off Time vs. Collector Current

10
S ( l ) rel – Relative Spectral Sensitivity

BPW 96 B Ee=1 mW/cm2

Ica – Collector Light Current ( mA )

1.0

0.5 mW/cm2
0.8

0.2 mW/cm2 0.6

1
0.1 mW/cm2
0.4

0.05 mW/cm2 0.2

l=950nm
0.1 0
0.1 1 10 100 400 600 800 1000
94 8297 VCE – Collector Emitter Voltage ( V ) 94 8348 l – Wavelength ( nm )
Figure 5. Collector Light Current vs. Figure 8. Relative Spectral Sensitivity vs. Wavelength
Collector Emitter Voltage

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0° 10 20
° ° 30°
S rel – Relative Sensitivity

40°
1.0

0.9 50°

0.8 60°

70°
0.7
80°

0.6 0.4 0.2 0 0.2 0.4 0.6

94 8299

Figure 9. Relative Radiant Sensitivity vs.

Angular Displacement

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Dimensions in mm

96 12192

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Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).

The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423

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