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Ca Vdd Vdd
of transistors with long channel devices biased at low Cl
Ca
Cl
current levels, whereas the high unity gain frequency outp
Vb1
outn
v1 g m 2v 2 3
v2
Ca
g m1v1 + ( sC 1 + g m 2 ) v 2 + sC a (v 2 − vo ) = 0
sC 2 v 3 − g m 2 v 2 − g m3 v 4 = 0 3. DESIGN PROCEDURE
( sC 3 + g m3 + sC s ) v 4 − sC s vo = 0 (1)
( sC + sC + sC ) vo − sC v 2 + ( g + g )v3 − sC v 4 = 0 In order to investigate the settling behavior of the
L a s a m4 m5 s proposed compensation technique a standard fourth order
v1 = vin − f vo system with the following transfer function is considered
The transfer function will be as follows:
k ( z p2 − s 2 )( s + c)
H (s) =
2
vo g m1 ( s C a C 2 − g m 2 g m ) ( g m3 + sC 3 + sC s ) ( s + a)(s + b)( s 2 + 2ζω n s +ω 2n )
= (2) (9)
vin s 4 d 4 + s 3 d 3 + s 2 d 2 + s d1 + d 0 k (γ 2ζ 2ω n2 − s 2 )(s + zζω n )
=
( s + αζω n )(s + βζω n )( s 2 + 2ζω n s +ω n2 )
where
g m = g m 4 + g m5 (3) where a = αζω n , b = βζω n , c = zζω n and z p = γζω n .
540
In switched-capacitor circuits, the step response
determines the amplifier settling performance in the time
((α + β )ζ + 2ζ αβ )ω 3 3
n=
d1
d4
(19)
domain. It can be shown that the step response of the d0
above-mentioned fourth order system is as follows: α β ζ 2ω n4 = (20)
d4
g m3
z ζ ω n= . (21)
s(t ) = A cl { 1 − a1 × e −αζω nt − a 2 × e − βζω nt C s +C 3
+ a3 × e −ζω nt a 4 × cos(ω n t 1 − ζ 2 ) (10) 50 50
zeta = 0.7
zeta = 0.8
alpha
alpha
= 0.7
= 0.8
zeta = 0.9 alpha = 0.9
−ζω nt 2
0 0
− a3 × e a5 × sin(ω n t 1 − ζ ) }
zeta = 0.95 alpha = 0.95
-150 -150
alpha = 1, beta = infinite, z = infinite zeta = 0.9, beta = infinite, z = infinite
β (z − α )
a1 = (11) -200
5 10 ω t 15 20
-200
5 10 15 20
2
z ( β − α )(1 − 2αζ + α 2ζ 2 ) ns ω nts
α (z − β )
a2 = (12) 50 50
z (α − β )(1 − 2 βζ 2 + β 2ζ 2 )
z = 0.7 beta = 0.7
z = 0.8 beta = 0.8
0 z = 0.9 beta = 0.9
αβζ z =1 0 beta = 0.949
a3 = Settling error [dB]
( )
-50
2 2 -100
a 4 = − zζ (α − 1)( β − 1)ζ − 1 + ζ
(14) -100
2 -150
+ (αζ − 1)(α + β − 2)ζ
{ ( )
alpha = 0.95, beta = infinite, zeta = 0.9 alpha = 0.95, z = 0.9, zeta = 0.9
-150
a5 = ( zζ 2 − 1) (α − 1)( β − 1)ζ 2 − 1 + ζ 2
-200 5 10 ω t 15 20
5 10 ω nts 15 20 ns
+ zζ 2 (1 − ζ 2 )(α + β − 2)
1
. } (15)
1−ζ 2
Fig. 5: Settling errors as a function of ω n t s for different values
of (a) ζ, (b) α, (c) z, and (d) β.
In the calculation of the step response it is assumed that
γ goes to infinity since in the practical cases the right and In these equations, the system parameters, α, β, z, ζ,
left-plane zp zero pair in the closed loop transfer function and ωn are known. The load and compensation
will be at much higher frequencies than the poles. capacitances, CL, Ca, and Cs are determined due to circuit
s(∞) − s (t s ) noise considerations. The parasitic capacitances, C1, C2,
The settling error as defined ε s = is
s (∞ ) and C3 are related to the device sizes. Also all of device
obtained by: transconductances can be expressed by transistor sizes.
So, these equations can be solved to determine the device
sizes using numerical calculations. However, these
ε s = a1 × e −αζω n t s + a 2 × e − βζω n t s
equations are very complex to solve. In order to achieve a
− a3 × e −ζω nt s a 4 × cos(ω n t s 1 − ζ 2 ) (16) coarse design of the proposed opamp, some
approximations are considered to simplify the solution of
+ a3 × e −ζω nt s a5 × sin(ω n t s 1 − ζ 2 ) . the above-mentioned equations and also give an insight to
them. In equations (4-7) the parasitic capacitances, C1,
This equation is very complex to intuitively explain how C2, and C3 are assumed to be much less than the other
to choose the system parameters to optimize the settling capacitances. In this case, equations (17-21) reduce to the
error. Therefore, numerical calculations are used. Fig. 5 following relations:
shows the settling error of the proposed compensation
technique for different values of the system parameters.
f g m1 g (C + C a )
The obtained system parameters for –120 dB settling error (α + β + 2) ω n ζ = − + m2 L
are α = 0.95 , ζ = 0.9 , z = 0.9 , β = 0.95 and ω n t s =17 . CL Ca CL
(22)
g m3(C L + C s )
The obtained system parameters for a specific settling +
error in a defined time can be used to determine the Cs CL
device parameters with the following equations: (2(α + β )ζ 2
+ αβζ 2 + 1 ω n2 = −) f g m1 g m3
Cs CL
(23)
d3 ( g m 2 + g m3) g m g g (C + C a + C s )
(α + β + 2) ω n ζ = (17) + + m 2 m3 L
d4 C2 CL Ca Cs CL
(2(α + β )ζ 2
+ αβζ 2 + 1 ω n2 = ) d2
d4
(18)
541
((α + β )ζ + 2ζ αβ ) ω
3 3
n =
f g m1 g m 2 g m
C 2 Ca C L
(24)
g m 2 g m 3 g m (C a + C s ) 0.4
+
C 2 Ca C s C L
0.2
f g m1 g m 2 g m3 g m
Voltage [V]
α β ζ 2ω n4 = (25)
C2 Ca Cs CL 0
g
z ζ ω n = m3 . (26) -0.2
Cs
-0.4 Proposed compensation method
In these equations, the transconductance of transistors Ahuja style
M1, M2, M3, and M4,5 and the parasitic capacitance of Improved Ahuja style (Yao)
-0.6
0 2 4 6 8 10
node N2, C2 are unknown and can be obtained by solving Time [sec] x 10
-9
them. Then one can run circuit level simulations to fine Fig. 6: Settling simulation results.
the obtained gate dimensions from system level
calculations. Table (2): Simulation results.
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