PC929

Shortcircuit Protector Circuit

PC929 Built-in Photocoupler Suitable
for Inverter-Driving MOS-FET/IGBT
❈ TÜV ( VDE 0884 ) approved type is also available as an option.

■ Features ■ Outline Dimensions (Unit : mm)

1. Built-in IGBT shortcircuit protector circuit 14 13 12 11 10 9 8

2. Built-in direct drive circuit for IGBT drive

(Peak output current ... IO1P, IO2P : MAX. 0.4A)
3. High speed response (tPLH, tPHL : MAX. 0.5 µ s) PC929

6.5
4. High isolation voltage (Viso : 4000Vrms)
5. Half lead pin pitch (p=1.27 mm) package type
6. Recognized by UL, file NO. E64380 Primary
side mark
1 2 3 4 5 6 7

■ Application 9.22 7.62

1. IGBT control for inverter drive

3.5

0.26
14 - 0.6 12 - 1.27

0.35
1.0 1.0
10.0

Internal connection diagram

14 13 12 11 10 9 8 1 Cathode 8 FS
2 Cathode 9 C
■ Absolute Maximum Ratings (Ta=Topr unless otherwise specified) 3
4
Anode
NC
10
11
GND
O2
Parameter Symbol Rating Unit IGBT protector 5 NC 12 O1
voltage circuit

circuit 6 NC 13 VCC
Constant

*1
Forward current IF 20 mA Interface 7 NC 14 GND
Input
Reverse voltage VR 6 (Ta = 25˚C) V
Amp.
Supply voltage VCC 35 V Terminals 4 to 7 :
Shortcircuit in element
O1 output current IO1 0.1 A 1 2 3 4 5 6 7
*4
O1 peak output current IO1P 0.4 A
* "OPIC" (Optical IC) is a trademark of the SHARP Corporation.
O2 output current IO2 0.1 A
An OPIC consists of a light-detecting element and signal processing circuit
*4
O2 peak output current IO2P 0.4 A integrated onto a single chip.
Output O1 output voltage VO1 35 V
*2
Power dissipation PO 500 mW Operation truth table is shown on the next page.
Overcurrent detecting voltage VC VCC V
Overcurrent detecting current IC 30 mA
Error signal output voltage VFS VCC V
Error signal output current IFS 20 mA
*3
Total power dissipation Ptot 550 mW
*5
Isolation voltage Viso 4 000 Vrms
Operating temperature Topr - 25 to + 80 ˚C
Storage temperature Tstg - 55 to + 125 ˚C
Soldering temperature Tsol 260 (for 10 sec) ˚C
*1, 2, 3 Decrease in the ambient temperature range of the Absolute Max. Rating : Shown in Figs 1 and 2.
*4 Pulse width <=0.15 µs, Duty ratio=0.01
*5 40 to 60% RH, AC for 1 minute, Ta=25˚C

“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
 PC929

■ Electro-optical Characteristics (1) (Ta=Topr unless otherwise specified)

Measuring
Parameter Symbol Conditions MIN. TYP. MAX. Unit circuit
VF1 Ta = 25˚C, IF = 10mA - 1.6 1.75 V -
Forward voltage
VF2 Ta = 25˚C, I F = 0.2mA 1.2 1.5 - V -
Input

Reverse current IR T a = 25˚C, V R = 5V - - 10 µA -

Terminal capacitance Ct Ta = 25˚C, V = 0, f = 1kHz - 30 250 pF -
Ta = - 10 to 60 ˚C 15 - 30 V
Operating supply voltage VCC -
- 15 - 24 V
VCC1 = 12V, VCC2 = - 12V (1)
O1 low level output voltage VO1L - 0.2 0.4 V
IO1 = 0.1A, IF = 5mA *8
VCC = VO1 = 24V, IO2 = - 0.1A (2)
O2 high level output voltage VO2H 20 22 - V
IF = 5mA *8
Output

O2 low level output voltage VO2L VCC = VO1 = 24V, IO2 = 0.1A, IF = 0mA *8 - 1.2 2.0 V (3)
O leak current VO1L Ta = 25˚C, VCC = VO1 = 35V, IF = 0mA *8 - - 500 µA (4)
Ta = 25˚C, VCC = VO1 = 24V, IF = 5mA *8 - 10 17 mA
High level supply current ICCH
VCC = VO1 = 24V, IF = 5mA *8 - - 19 mA
(6)
Ta = 25˚C, VCC = VO1 = 24V, IF = 0mA *8 - 11 18 mA
Low level supply current ICCL
VCC = VO1 = 24V, IF = 0mA *8 - - 20 mA
*7 "Low→High" Ta = 25˚C, VCC = VO1 = 24V *8 0.3 1.5 3.0 mA
IFLH (5)
threshold input current VCC = VO1 = 24V *8 0.2 - 5.0 mA
Ω
Transfer characteristics

Isolation resistance RISO Ta = 25˚C, DC500V, 40 to60% RH 5 x 1010 1 x 1011 - -

µs
Response time

"Low→High" propagation delay time tPLH - 0.3 0.5

Ta = 25˚C, VCC = VO1 = 24V
"High→Low" propagation delay time tPHL - 0.3 0.5 µs
RG = 47Ω , CG = 3 000pF, I F = 5mA (8)
Rise time tr - 0.2 0.5 µs
*8
Fall time tf - 0.2 0.5 µs
Instantaneous common mode rejection Ta = 25˚C, VCC = VO1 = 24V, IF = 5mA
CMH - 1 500 - - V/ µ s
voltage "Output : High level" VCM = 600V( peak ) , ∆ VO2H = 2.0V *8
(7)
Instantaneous common mode rejection Ta = 25˚C, VCC = VO1 = 24V, IF = 0mA
CML 1 500 - - V/ µ s
voltage "Output : Low level" VCM = 600V( peak ) , ∆ VO2L = 2.0V *8
*6 When measuring output and transfer characteristics, connect a bypass capacitor (0.01 µ F or more) between VCC 13 and GND 14 near the device.
*7 I FLH represents forward current when output goes from "Low" to "High".
*8 FS=OPEN, VC =0V

■ Truth Table
Input C Input/Output O2 Output FS Output
Low level High level High level
ON
High level Low level Low level For protective operation
Low level Low level High level
OFF
High level Low level High level
 PC929

■ Electro-optical Characteristics (2) (Ta=Topr unless otherwise specified)

Parameter Symbol Conditions MIN. TYP. MAX. Unit Test circuit
Protective output Overcurrent

*9 *10
Overcurrent detecting voltage VCTH Ta = 25˚C, IF = 5mA VCC - VCC - VCC -
detection

V
Overcurrent detecting voltage VCC = V01 = 24V, RG = 47Ω 6.5 6.0 5.5 (9)
VCHIS CG = 3 000pF, FS = OPEN
hysteresis width 1 2 3 V
*9
O2 "High→Low" delay time
tPCOHL Ta = 25˚C - 4 10 µs
at protection from overcurrent
VCC = V01 = 24V, IF = 5mA (13)
O2 fall time at protection
tPCOtf CG = 3 000pF, RG = 47Ω 2 5 - µs
from overcurrent
CP = 1 000pF, RC = 1kΩ
O2 output voltage at protection FS = OPEN (10)
VOE - - 2 V
from overcurrent
*9
Ta = 25˚C, IF = 5mA, IFS = 10mA
Low level error (11)
VFSL VCC = VO1 = 24V, RG = 47Ω , C G = 3 000pF, - 0.2 0.4 V
signal voltage
C = OPEN
Error signal output

Ta = 25˚C, IF = 5mA, VFS = 24V

High level error
IFSH VCC = VO1 = 24V, RG = 47Ω , C G = 3 000pF, - - 100 µA (12)
signal current
VC = 0V
Error signal "High→Low" Ta = 25˚C, RFS = 1.8kΩ
tPCFHL - 1 5 µs
delay time VCC = VO1 = 24V, IF = 5mA (14)
CG = 3 000pF, RG = 47Ω
Error signal output pulse width ∆ tFS CP = 1 000pF, RC = 1kΩ 20 35 - µs

*9 When measuring overcurrent, protective output and error signal output characteristics, connect a bypass capacitor (0.01 µ F or more) between VCC 13 and GND 14 near the device.
*10 VCTH represents C-terminal voltage when O 2 output goes from "High" to "Low".

Fig. 1 Forward Current vs. Ambient Fig. 2 Power Dissipation vs. Ambient
Temperature Temperature
60 600
550
Power dissipation Ptot, Po (mW)

50 500
Forward current IF (mA)

40 400

30 300

20 200

10 100

0 0
- 25 0 25 50 75 80 100 125 - 25 0 25 50 75 80 100 125

Ambient temperature Ta (˚C) Ambient temperature Ta (˚C)

 PC929

■ Test Circuit Diagram

(1) 13
(2) 13
3 12 IO1 V 3 12
↑
I O2
CC1 VCC
V VO1L ↑
11 11
↑ IF PC929 VCC2 ↑ IF PC929 V VO2H
14 10 14 10

1 2 9 1 2 9
8 8

(3) 13
(4) 13
A I O1L
3 12 3 12
VCC VCC
11 11
↑ IF PC929 V VO2L ↑ IO2 ↑ IF PC929
14 10 14 10

1 2 9 1 2 9
8 8

(5) 13
(6) 13 A
3 3 I CC
12 VCC 12 VCC
11 11
↑ IF PC929 V VO2 ↑ IF PC929
variable 14 10 14 10

1 2 9 1 2 9
8 8

13
(7) SW
3 12 (8)
VCC 13
A B 11 3 12 RG
PC929 V VO2 VCC
14 10 t r = tf = 0.01 µ s 11
VIN Pulse width : 5 µ s PC929 VOUT CG
1 2 9 14 10
Duty ratio=50%
8 9
1 2
+ - 8

VCM

VCM (Peak) 50%

V IN waveform
tpLH tpHL
VCM waveform GND
90%
VO2H
CMH, VO2 waveform 50%
SW at A, IF = 5mA ∆ VO2H 10%
VOUT waveform
∆ VO2L tr tf
CM L, VO2 waveform VO2L
SW at B, IF = 0mA GND

(9) 13
(10) 13
3 12 3 12
RG VCC RG VCC
11 11
↑ IF PC929 V VOUT CG ↑ IF PC929 V VOE CG RL
14 10 14 10
V VCTH CF VC
1 2 9 1 2 9
8 8
 PC929

■ Test Circuit Diagram

(11) (12)

13 13
3 12 3 12
RG VCC RG VCC
11 11
↑ IF PC929 CG ↑ IF PC929 CG
14 10 14 10

1 2 9 V VFSL ↓ IFS 1 2 9 VFS

IFSH
8 8 A

VOUT
(13) (14)

13 13
3 3 RC
12 12
RG VCC RG VCC
tr = tf = 0.01 µs 11 tr = tf = 0.01µ s 11
VIN Pulse width : 25 µ s PC929 V CG VIN Pulse width : 25 µ s PC929 CG
Duty ratio=25% 14 10 Duty ratio=25% 14 10
CP RC
RFS
1 2 9 1 2 9 V

8 8

IF
(Input current)
tpCOTF

90%

50%

VO2 10%
(O2 output voltage)
VOE

t pCOHL

90%
Error detecting threshold voltage (VCTH)

C 10%
(Detecting terminal)

t pCFHL ∆ t FS
FS
(Error signal output)
50% 50%
 PC929

■ Operations of Shortcircuit Protector Circuit PC929

14 GND VCC
V
Light emitting diode 13 CC
Anode O1
3 12
Constant voltage circuit
Cathode O2
1 11
Amp. RG
IGBT
TTL, microcomputer, etc. Photodiode RC
Interface
C
IGBT protector circuit 9
FS
8 CP
GND
10
VEE

Feedback to primary side

1. Detection of increase in VCE (sat) of IGBT due to overcurrent by means of C-terminal 9 terminal)
2. Reduction of the IGBT gate voltage, and suppression of the collector current.
3. Simultaneous output of signals to indicate the shortcircuit condition (FS signal) from FS terminal to the microcomputer
4. Judgement and processing by the microcomputer In the case of instantaneous shortcircuit, run continues.
At fault, input to the photocoupler is cut off, and IGBT is turned OFF.

Precautions for Operation

1. It is recommended that a capacitor of about 1000pF is added between C-terminal and GND in order to prevent
malfunction of C-terminal due to noise. In the case of capacitor added, rise of the detecting voltage is delayed.
Thus, use together a resistance of about 1kΩ set between Vcc and C-terminal.
The C-terminal rise time varies with the time constant of CR added. Check sufficiently before use.
2. The light-detecting element used for this product is provided with a parasitic diode between each terminal and GND.
When a terminal happens to reach electric potential lower than GND potential even in a moment, malfunction
or rupture may result. Design the circuit so that each terminal will be kept at electric potential lower than the
GND potential at all times.