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Foundry technologies
180-nm CMOS, RF CMOS and SiGe BiCMOS
Process Industry-standard CMOS 7SF with CMOS 7RF with 60-GHz CMOS 7SF with120-GHz
180-nm CMOS passive devices bipolar devices bipolar devices
Wiring Copper or aluminum Copper and aluminum Copper and aluminum Copper with analog metal
with analog metal with analog metal
CMOS Specifications CMOS 7SF CMOS 7RF BiCMOS 7WL BiCMOS 7HP
Isolation Shallow trench Shallow trench Shallow and deep Shallow and deep
trench trench
*FET devices can be used in a variety of design options that are defined in the respective technology design manuals.
Passive Devices CMOS 7SF CMOS 7RF BiCMOS 7WL BiCMOS 7HP
Capacitors
Single MIM 1.35 fF/µm2 ± 15% 2.0 fF/µm2 ± 10% 2.0 fF/µm2 ± 10% 1.0 fF/µm2 ± 15%
Dual MIM 4.0 fF/µm2 ± 10% 4.0 fF/µm2 ± 10%
Thick-oxide MOS 7.9 fF/µm2 ± 10% 7.9 fF/µm2 ± 10% 7.9 fF/µm2 ± 10% 2.5 fF/µm2 ± 15%
Inductors*
Analog metal spiral Q = 10 Q = 10
Thick analog metal spiral Q = 18 Q = 18 Q = 18
Dual-metal spiral parallel Q = 24 Q = 24
stacked
Resistors
p+ diffusion 105 W/ ± 15% 105 W/ ± 15% 105 W/ ± 15% 105 W/ ± 15%
n+ diffusion 72 W/ ± 10% 72 W/ ± 10% 72 W/ ± 10% 72 W/ ± 10%
p+ polysilicon 260 W/ ± 15% 270 W/ ± 15% 270 W/ ± 15% 260 W/ ± 15%
p- polysilicon 1600 W/ ± 20% 1600 W/ ± 20% 1600 W/ ± 25%
Tantalum nitride on M1 61 W/ ± 6% 61 W/ ± 6% 142 W/ ± 10%
n+ subcollector diffusion 8.1 W/ ± 15%
Varactors
Collector-base junction – –
Hyperabrupt junction – –
MOS
Models
Agilent ADS –
BSIM3
Cadence Spectre – – –
Cadence SpectreRF –
IBM digital – – –
Synopsys HSPICE
Verification tools
Avant! Hercules – – –
Cadence Assura –
Mentor Graphics Calibre –
Libraries
Artisan – –
IBM
IBM BiCMOS 7HP incorporates
a high-performance SiGe bipolar
device optimized for high-speed
or low-power applications. It is
ideally suited to applications in the © Copyright IBM Corporation 2003
G224-7148-02