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D D D
nVT G G G
common source Rwith Rvs sig
!"#
ID + IS iD )$%#
vS Rin = RG
nVT S S S
rd ≈ forward bias only
ID saturation: vGS < Vthn , vDS ≤ vGS − Vthn : Ro = R D common drain
1 W g m Rd (source follower)
iD = 2 · kn� · L
2
(vGS − Vthn ) · (1 + λ · vDS ) Av o = − vout
Small signals (NMOS)
1 + g m RS
vGS < Vthn , vDS ≥ vGS − Vthn :
triode:
mosfet small signal
The small signal model is exactly the same as that for the PMOS. You can derive this yourself.
iD = kn� · W
� 2
vDS
� !
!
Rin = RG
1
L (vGS − Vthn ) · vDS − 2 !
Ro =
G D !
!"#$% gm
!
+ cutoff: vGS > Vthn : g m ro1 // ro 2
!
v gs g m v gs ro ! g m ro
()&*% !&'% Avo Av o =
- iD = 0
!
!
1 g m ro1 // ro 2 1 + g m ro
! !+%
! ("#$%
S !
! (&'%
! "#$%&'!&%!
! !"#$' %#&'
W W
Vth ) (1 O VDS )2 · ID | P p Cox (VGS Vthn )
!
gm P p Cox (V�GS W !
L kn
gm = · n · VOV = L ! %('
%)*+'
L VOV !
2 ID � ! % %
gm W
! %
VGS Vthn = 2 · kn� · L · ID !
! % Elementary Configurations: Small Signal Analysis
! ' #& !)*+'
ID AC 1
� ro R
1 I1D = 1 W R gm R r0 g m R r0
ro | 1 + λ · VIDS
c P n Cox (VGS Vthn ) 2
O I Dc O ID D
2 L f O 0
AC
AC
ID
AC
1 O VDS AC
AC
Body effect 1 R
R AC
As mentioned before, the MOSFET is really a 4-terminal device. When B is not connected to S, gm AC
the source-body voltage impacts the effective threshold voltage. For small signals, this results in
the modified equivalent model shown below (the same for both nMOS and pMOS). The
derivation of these models can be found in the textbook. (a) (b) (c) (d) (e)
G B
+ +
vgs g m vgs ro g mb vbs vbs
- -