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A new approach for multilayered optical data storage is demonstrated here. in this technology we
find that photo-oxidation may increase the fluorescence intensity of molecule by two-photon excitation in
a wide wavelength region (780–910 nm) from a 100 fs Ti:sapphire laser. The proposed scheme encodes the
digital bits by photo-oxidation of induced by two-photon excitation, and reads the increase in fluorescence
from the oxidation area. The high-fluorescence signal can easily be distinguished as bit 1, and the low-
fluorescence signal, as bit 0. This change in the fluorescence intensity could be used to encode information
for read-only memory.
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wavelength was unexpected. In fact, UV light is highly effi-
cient for C60 photo-oxidation.8) In the one-electron descrip-
tion the one-photon excitation of C60 between the highest oc-
cupied molecular orbital-lowest unoccupied molecular orbital
(HOMO-LUMO) is strongly dipole-forbidden due to the cen-
trosymmetric structure of the molecule, while the third-order
optical polarizibility is always allowed. Two-photon excita-
tion is a third order effect in nonlinear optics. After photo-
oxidation, some higher excited singlet states are also reached
with greater probability by two-photon excitation in the near
UV region than in visible region. This may be the reason why
the photo-oxidation rate is higher at 830 nm than at 910 nm
at the same excitation power. However, the changes of the
Fig. 1. Fluorescence spectra of C60 doped polystyrene film under
fluorescence intensity induced by two-photon excitation can
100 fs, 82 MHz, 50 mW Ti:sapphire laser irradiation at 910 nm, be blocked in an air-free environment, and nondestructive
for different exposure times of (a) 0 s and (b) 30 s. reading becomes possible for two-photon excitation.5, 9)
Fig. 3. (a) Fluorescence intensity vs distance along the X-direction in the X–Y plane. (b) Fluorescence intensity vs distance along the
Z-direction in the X–Z plane. The exposure time for each point is marked above the peak. Fluorescence was observed in the wavelength
region between 664 nm and 696 nm.
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confined to the focal volume, where the excitation intensity References
is extremely high. C60 molecules could reach the excited 1) W. Blau, H. J. Byme, D. J. Dardin, T. J. Dennis, J. H.
state by simultaneously absorbing two photons; this simul- Hare, H. W. Kroto, and R. Tarlor: Phys. Rev. Lett. 67, 1423
taneous absorption may also result in the photo-oxidation of (1991).
C60 . The oxidation area was confined to the focal volume, 2) L. W. Tutt and A. Kost: Nature 356, 225 (1992).
therefore it is possible to increase the data storage density by 3) A. P. G. Robinson, R. E. Palmer, T. Tada, T. Kanayama,
and J. A. Preece: Appl. Phys. Lett. 72, 1302 (1998).
two-photon-induced photo-oxidation. We did not attempt
4) F. Z. Henari, K. H. Cazzini, N. Wweldon, and W. J. Blau:
any optimization to obtain high-density storage, due to the
Appl. Phys. Lett. 68, 619 (1996).
limitation of the experimental configuration used.
5) A. D. Xia, S. Wada, and H. Tashiro: Appl. Phys. Lett. 73,
1323 (1998).
6) I. V. Bezel, S. V. Chekalin, Y. A. Matveets, A.G. Stepanov,
Summary A. Yarsev, and V. S. Letokhov: Chem. Phys. Lett. 160, 451
(1992).
We demonstrated 3D optical data storage with photo- 7) S. Leach, M. Vervloet, A. Despres, E. Breheret, J. P. Hare,
oxidation of C60 pumped by the fs Ti:sapphire laser. How- T. J. Dennis, H. W. Kroto, R. Taylor, and D. R. M. Waltom:
ever, the writing speed of our demonstration experiment is Chem. Phys. 160, 451 (1992).
still much too slow for practical use. Recently, we noted 8) K. M. Creegan, J. L. Robins, W. K. Robbins, J. M. Millar,
that some polymer composites with C60 as the photosensi- R. D. Sherwood, P. J. Tindall, and D. M. Cox: J. Am. Chem.
tizer could produce highly efficient optical property changes Soc. 114, 1103 (1992).
under both one-and two-photon excitation with very fast re- 9) C. Zhang, X. D. Xiao, W. K. Ge, M. M. T. Loy, D. Z. Wang,
sponse times of several microseconds. Thus, very fast writing Q. J. Zhang, and J. Zuo: Appl. Phys. Lett. 68, 943 (1996).
can be achieved with such a memory system.
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