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RA30H1317M
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA30H1317M is a 30-watt RF MOSFET Amplifier BLOCK DIAGRAM
2 3
Module for 12.5-volt mobile radios that operate in the 135- to
175-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
1
voltage (VGG=0V), only a small leakage current flows into the 4
RoHS COMPLIANCE
• RA30H1317M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever ,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER SUPPLY FORM
Antistatic tray,
RA30H1317M-101
10 modules/tray
All parameters, conditions, ratings, and limits are subject to change without notice.
Pout
50 100 VGG=5V
TOTAL EFFICIENCY
-30
INPUT VSWR ρin (-)
HARMONICS (dBc)
Pin=50mW
40 80
ηT -40
ηT(%)
30 60
-50 nd
20 VDD=12.5V 40 2
VGG=5V
10 Pin=50mW 20 -60
ρin 3rd
0 0 -70
130 140 150 160 170 180 130 140 150 160 170 180
FREQUENCY f(MHz) FREQUENCY f(MHz)
OUTPUT POWER, POWER GAIN and OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER DRAIN CURRENT versus INPUT POWER
60 12 60 12
Pout Pout
POWER GAIN Gp(dB)
50 10
POWER GAIN Gp(dB) 50 10
DRAIN CURRENT
DRAIN CURRENT
OUTPUT POWER
Gp
OUTPUT POWER
Gp
40 8 40 8
Pout(dBm)
Pout(dBm)
IDD(A)
IDD(A)
30 6 30 6
IDD
20 4 20 4
f=135MHz, f=155MHz,
IDD
10 VDD=12.5V, 2 10 VDD=12.5V, 2
VGG=5V VGG=5V
0 0 0 0
-10 -5 0 5 10 15 20 -10 -5 0 5 10 15 20
INPUT POWER Pin(dBm) INPUT POWER Pin(dBm)
DRAIN CURRENT
OUTPUT POWER
Gp
40 8
Pout(dBm)
IDD(A)
30 6
IDD
20 4
f=175MHz,
10 VDD=12.5V, 2
VGG=5V
0 0
-10 -5 0 5 10 15 20
INPUT POWER Pin(dBm)
OUTPUT POWER and DRAIN CURRENT OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE versus DRAIN VOLTAGE
90 18 90 18
OUTPUT POWER P out(W)
f=155MHz,
OUTPUT POWER P out(W)
80 f=135MHz, 16 80 16
VDD=12.5V, VDD=12.5V,
DRAIN CURRENT IDD(A)
70 VGG=5V
14 70 VGG=5V
14
60 12 60 12
Pout
50 Pout 10 50 10
40 8 40 8
30 6 30 6
IDD IDD
20 4 20 4
10 2 10 2
0 0 0 0
2 4 6 8 10 12 14 16 2 4 6 8 10 12 14 16
DRAIN VOLTAGE VDD(V) DRAIN VOLTAGE VDD(V)
80 f=175MHz, 16
VDD=12.5V,
OUTPUT POWER and DRAIN CURRENT OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE versus GATE VOLTAGE
60 12 60 12
f=135MHz, f=155MHz,
OUTPUT POWER P out(W)
30 6 30 6
IDD
IDD
20 4 20 4
10 2 10 2
0 0 0 0
2 2.5 3 3.5 4 4.5 5 2 2.5 3 3.5 4 4.5 5
GATE VOLTAGE VGG(V) GATE VOLTAGE VGG(V)
50 VDD=12.5V, 10
DRAIN CURRENT IDD(A)
VGG=5V Pout
40 8
30 6
IDD
20 4
10 2
0 0
2 2.5 3 3.5 4 4.5 5
GATE VOLTAGE VGG(V)
66.0 ±0.5
17.0 ±0.5
9.5 ±0.5
4.0 ±0.3
5
1 2 3 4
2.0 ±0.5
14.0 ±1
Ø0.45 ±0.15
12.0 ±1
16.5 ±1
43.5 ±1
55.5 ±1
3.1 +0.6/-0.4
0.09 ±0.02
7.5 ±0.5
(9.88)
2.3 ±0.3
(50.4)
1 RF Input (Pin)
2 Gate Voltage (VGG)
3 Drain Voltage (VDD)
4 RF Output (Pout)
5 RF Ground (Case)
ZG=50Ω ZL=50Ω
Signal Pre- Directional Directional Power
Attenuator Attenuator Attenuator
Generator amplifier Coupler Coupler Meter
C1 C2
- + + -
DC Power DC Power
C1, C2: 4700pF, 22uF in parallel Supply VGG Supply VDD
1 RF Input (Pin)
2 Gate Voltage (VGG)
3 Drain Voltage (VDD)
4 RF Output (Pout)
5 RF Ground (Case)
EQUIVALENT CIRCUIT
2 3
1 4
For long-term reliability, it is best to keep the module case temperature (Tcase) below 90°C. For an ambient
temperature Tair=60°C and Pout=30W, the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / ηT ) -
Pout + Pin ) of the heat sink, including the contact resistance, is:
Rth(case-air) = (90°C - 60°C) / (30W/40% – 30W + 0.05W) = 0.67 °C/W
When mounting the module with the thermal resistance of 0.67 °C/W, the channel temperature of each stage
transistor is:
Tch1 = Tair + 62.8 °C
Tch2 = Tair + 81.9 °C
The 175°C maximum rating for the channel temperature ensures application under derated conditions.
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there
is always the possibility that trouble may occur. Trouble with semiconductors may lead to personal injury, fire or property
damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as
(i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against any malfunction or
mishap.