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STW10NK60Z
N-CHANNEL 600V-0.65Ω-10A - TO220/FP-D²/I²PAK-TO-247
Zener-Protected SuperMESH™ MOSFET
<0.75 Ω
1 1 2
STP10NK60ZFP 600 V 10 A 35 TO-220 1
TO-220FP
STP10NK60Z 600 V <0.75 Ω 10 A 115 TO-247
STW10NK60Z 600 V <0.75 Ω 10 A 156
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.
Applications
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTOR AND PFC
■ LIGHTING
Rev 1
July 2005 1/19
www.st.com 19
1 Absolute maximum ratings STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
10
ID Drain Current (continuous) at TC = 25°C 10 10 A
(Note 3)
5.7
ID Drain Current (continuous) at TC = 100°C 5.7 5.7 A
(Note 3)
IDM 36
Drain Current (pulsed) 36 36 A
Note 2 (Note 3)
2/19
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z 1 Absolute maximum ratings
Gate-Source Igs=±1mA
BVGSO 30 V
Breakdown Voltage (Open Drain)
3/19
2 Electrical characteristics STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
2 Electrical characteristics
Table 5. On/Off
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Drain-Source Breakdown
V(BR)DSS ID = 250µA, V GS= 0 600 V
Voltage
Zero Gate Voltage Drain 1
IDSS VDS = Max Rating, µA
Current (VGS = 0) 50
Gate Body Leakage Current
IGSS VGS = ±15V, VDS = 0 ±10 µA
(VDS = 0)
Static Drain-Source On
RDS(on) VGS= 10 V, ID= 20 A 0.65 0.75 Ω
Resistance
Table 6. Dynamic
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Coss eq.
Equivalent Ouput Capacitance VGS=0, VDS =0V to 480V 90 pF
Note 5
Qg Total Gate Charge VDD=480V, ID = 8A 50 70 nC
Qgs Gate-Source Charge VGS =10V 10 nC
Qgd Gate-Drain Charge (see Figure 19) 25 nC
VDD=300 V, ID=4A,
td(on) Turn-on Delay Time 20 ns
RG=4.7Ω, VGS=10V
tr Rise Time 20 ns
(see Figure 20)
VDD=300 V, ID=4A,
td(off) Turn-off Delay Time 55 ns
RG=4.7Ω, VGS=10V
tf Fall Time 30 ns
(see Figure 20)
tr(Voff) Off-voltage Rise Time VDD=480 V, ID=8A, 18 ns
tf Fall Time RG=4.7Ω, VGS=10V 18 ns
tc Cross-over Time (see Figure 20) 36 ns
4/19
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z 2 Electrical characteristics
5/19
2 Electrical characteristics STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
Figure 3. Safe Operating Area for TO-220FP Figure 4. Thermal Impedance for TO-220FP
Figure 5. Safe Operating Area for TO-247 Figure 6. Thermal Impedance for TO-247
6/19
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z 2 Electrical characteristics
Figure 11. Gate Charge vs Gate -Source Figure 12. Capacitance Variations
Voltage
7/19
2 Electrical characteristics STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
Figure 13. Normalized Gate Threshold Voltage Figure 14. Normalized on Resistance vs
vs Temperatute Temperature
Figure 15. Source-drain Diode Forward Figure 16. Normalized BVDSS vs Temperature
Characteristics
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STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z 3 Test circuits
3 Test circuits
Figure 18. Switching Times Test Circuit For Figure 19. Gate Charge Test Circuit
Resistive Load
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4 Package mechanical data STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
10/19
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z 4 Package mechanical data
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 E 0.126
A
D
B
L3
L6
L7
F1
G1
G
H
F2
1 2 3
L5
L2 L4
11/19
4 Package mechanical data STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
øP 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116
12/19
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z 4 Package mechanical data
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
D1 8 0.315
E 10 10.4 0.393
E1 8.5 0.334
R 0.4 0.015
V2 0º 4º
3
13/19
4 Package mechanical data STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
L 13 14 0.511 0.551
14/19
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z 4 Package mechanical data
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.85 5.15 0.19 0.20
A1 2.20 2.60 0.086 0.102
b 1.0 1.40 0.039 0.055
b1 2.0 2.40 0.079 0.094
b2 3.0 3.40 0.118 0.134
c 0.40 0.80 0.015 0.03
D 19.85 20.15 0.781 0.793
E 15.45 15.75 0.608 0.620
e 5.45 0.214
L 14.20 14.80 0.560 0.582
L1 3.70 4.30 0.14 0.17
L2 18.50 0.728
øP 3.55 3.65 0.140 0.143
øR 4.50 5.50 0.177 0.216
S 5.50 0.216
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5 Packing mechanical data STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
D2PAK FOOTPRINT
16/19
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z 6 Order codes
6 Order codes
17/19
7 Revision History STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z
7 Revision History
18/19
STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z 7 Revision History
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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