KSD5072

NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR

COLOR TV HORIZONTAL OUTPUT APPLICATION (DAMPER DIODE BUILT IN)

High Collector-Base Voltage (VCBO=1500V) High Switching Speed (tF. max=0.4s)

TO-3PF

ABSOLUTE MIXIMUM RATING

Characteristic Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Current (Peak) Collector Dissipation (TC=250C) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IC PC TJ T STG Rating 1500 800 6 5 16 60 150 -55 ~ 150 Unit V V V A A W C C 1.Base 2.Collector 3.Emitter

ELECTRICAL CHARACTERISTICS (TC=25C)

Characteristic Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Current Gain Bandwidth Product Damper Diode Turn On Voltage Fall Time Symbol ICBO IEBO hFE VCE(sat) VBE(sat) fT VF tF Test Condition VCB = 800V, IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC = 1A IC = 4A, IB = 0.8A IC = 4A, IB = 0.8A VCE = 10V, IC = 1A IF = 5A IC = 4A, IB1 = 0.8A IB2 = - 1.6A, VCC = 200V RL = 50 Min 40 8 3 3 2 0.4 Typ Max 10 200 5 1.5 Unit A mA V V MHz V s

Rev B.

1999 Fairchild Semiconductor Corporation

KSD5072

NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR

KSD5072

NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR

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Preliminary

First Production

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