SEMICONDUCTOR TECHNICAL DATA

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The RF Line

NPN Silicon RF Power Transistor

. . . designed primarily for wideband largesignal output amplifier stages in the 225 to 400 MHz frequency range. Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc Output Power = 60 Watts over 225 to 400 MHz Band Minimum Gain = 7.8 dB @ 400 MHz BuiltIn Matching Network for Broadband Operation Using Double Match Technique 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR Gold Metallization System for High Reliability Applications

2N6439

60 W, 225 to 400 MHz CONTROLLED Q BROADBAND RF POWER TRANSISTOR NPN SILICON

CASE 31601, STYLE 1

MAXIMUM RATINGS*
Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Total Device Dissipation @ TC = 25C (1) Derate above 25C Storage Temperature Range Symbol VCEO VCBO VEBO PD Tstg Value 33 60 4.0 146 0.83 65 to +200 Unit Vdc Vdc Vdc Watts W/C C

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 1.2 Unit C/W

ELECTRICAL CHARACTERISTICS* (TC = 25C unless otherwise noted.)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 50 mAdc, IB = 0) CollectorEmitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) EmitterBase Breakdown Voltage (IE = 5.0 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) V(BR)CEO V(BR)CES V(BR)EBO ICBO 33 60 4.0 2.0 Vdc Vdc Vdc mAdc

NOTE: (continued) 1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF amplifiers. * Indicates JEDEC Registered Data.

ELECTRICAL CHARACTERISTICS* continued (TC = 25C unless otherwise noted.)

Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc) hFE 10 100

DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) Cob 67 75 pF

BROADBAND FUNCTIONAL TESTS (Figure 6)

CommonEmitter Amplifier Power Gain (VCC = 28 Vdc, Pout = 60 W, f = 225400 MHz) Electrical Ruggedness (Pout = 60 W, VCC = 28 Vdc, f = 400 MHz, VSWR 30:1 all phase angles) GPE No Degradation in Output Power 7.8 8.5 dB

NARROW BAND FUNCTIONAL TESTS (Figure 1)

CommonEmitter Amplifier Power Gain (VCC = 28 Vdc, Pout = 60 W, f = 400 MHz) Collector Efficiency (VCC = 28 Vdc, Pout = 60 W, f = 400 MHz) * Indicates JEDEC Registered Data. GPE 7.8 55 10 dB %

C8 C5 C1 L1 C7 C11 C2 L3 C6 L5 DUT

L2

C4

C3

R1 C1 to C4, C11 4.040 pF C5 to C8 33 pF C9 1000 pF C10 5.0 F R1 15 L1, L2 3/16 x 1 Copper Strap L3 1.5 H L4 10 H L5 1 Turn #16 AWG, 5/16 I.D.

L4

C9

C10

VCC = 28 V

Figure 1. 400 MHz Test Amplifier (Narrow Band)

NARROW BAND DATA

100 Pout , OUTPUT POWER (WATTS) 80 60 40 20 0 200

VCC = 28 V Pin = 8 W 6W 4W

120 Pout , OUTPUT POWER (WATTS) 100 80 60 40 20

VCC = 28 V f = 225 MHz 400 MHz

2W 250 300 350 f, FREQUENCY (MHz) 400 450

6 8 10 12 14 Pin, INPUT POWER (WATTS)

16

18

20

Figure 2. Pout versus Frequency

Figure 3. Output Power versus Input Power

12 G PE , COMMON EMITTER AMPLIFIER POWER GAIN (dB) Pout = 60 W VCC = 28 V

100 Pout , OUTPUT POWER (WATTS) f = 400 MHz 80 Pin = 6 W 60 40 20 0 10 4W

11

10

8 200

250

300 350 f, FREQUENCY (MHz)

400

450

14

18 22 VCC, SUPPLY VOLTAGE (VOLTS)

26

30

Figure 4. Power Gain versus Frequency

Figure 5. Output Power versus Supply Voltage

100 Pout , OUTPUT POWER (WATTS) f = 225 MHz 80 Pin = 8 W 60 4W 40 20 0 10

14

18 22 VCC, SUPPLY VOLTAGE (VOLTS)

26

30

Figure 6. Output Power versus Supply Voltage

R1 B C13 + L1 L2 DUT 50 LINE T1 C1 L4 0.8 C3 C4 C5 C6 C7 A L5 0.5 C8 C11 4:1 RFC1 C14 C16 C15

VCC

C12

T2

50 LINE

4:1

C2

C9 C10

L3

R2

C17

C1 68 pF C2, C4, C8, C10 27 pF C3, C5, C11 10 pF C6, C7 51 pF C9 1.010 pF JOHANSON C12 100 pF C13, C15 680 pF C14, C16 1.0 F, 35 V Tantalum C17 0.1 F, ERIE Red Cap

RFC1 Ferrite Bead Choke, Feroxcube VK200 19/4B B Ferroxcube 56-590-65/4B Ferrite Bead T1, T2 25 Ohms (UT25) Miniature Coaxial Cable, 1 turn R1 11 , 1.0 W R2 20 , 1/4 W L1 10 Turns, #22 AWG, 1/8 I.D. L2 4 Turns, #16 AWG, 1/4 I.D. L3 6 Turns, #24 AWG, 1/8 I.D. L4, L5 1 x 0.25 Microstrip Line Board Material 0.031 Thick Teflon-Fiberglass

Figure 7. 225 to 400 MHz Broadband Test Circuit Schematic

BROADBAND DATA (Circuit, Figure 7)

10 8 6 4 2 0 EFFICIENCY (%) Pout = 60 W VCC = 28 V 100 80 60 40 Pout = 60 W VCC = 28 V

G PE , POWER GAIN (dB)

20 0

200

250

300 350 f, FREQUENCY (MHz)

400

200

250

300 350 f, FREQUENCY (MHz)

400

Figure 8. Power Gain versus Frequency

Figure 9. Efficiency versus Frequency

6 5 INPUT VSWR 4
.3

Pout = 60 W VCC = 28 V
0.1 0.2

400 ZOL* 450

450

f = 225 MHz
0.1 Zin 275 Pout = 60 W, VCC = 28 V 350

3 2 1

200

250

300 350 f, FREQUENCY (MHz)

400

275 350 400 FREQUENCY MHz ZOL* = Conjugate of the optimum load 225 ZOL* = impedance into which the device 275 ZOL* = output operates at a given output 350 ZOL* = power, voltage and frequency. 400 450

f = 225 MHz

Zin OHMS 0.7 + j1.6 0.9 + j2.2 2.2 + j2.1 1.2 + j0.6 0.5 + j1.6

ZOL* OHMS 2.2 - j1.8 2.1 - j0.9 2.1 - j0.1 2.0 + j0.2 1.9 + j0.9

Figure 10. Input VSWR versus Frequency

Figure 11. Series Equivalent Input-Output Impedance

PACKAGE DIMENSIONS

D R

F
4 3 NOTES: 1. FLANGE IS ISOLATED IN ALL STYLES. DIM A B C D E F H J K L N Q R U STYLE 1: PIN 1. 2. 3. 4. INCHES MIN MAX 24.38 25.14 12.45 12.95 5.97 7.62 5.33 5.58 2.16 3.04 5.08 5.33 18.29 18.54 0.10 0.15 10.29 11.17 3.81 4.06 3.81 4.31 2.92 3.30 3.05 3.30 11.94 12.57 MILLIMETERS MIN MAX 0.960 0.990 0.490 0.510 0.235 0.300 0.210 0.220 0.085 0.120 0.200 0.210 0.720 0.730 0.004 0.006 0.405 0.440 0.150 0.160 0.150 0.170 0.115 0.130 0.120 0.130 0.470 0.495

L B J E N H A U C

EMITTER COLLECTOR EMITTER BASE

CASE 31601 ISSUE D

Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
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