BD434/436/438

BD434/436/438
Medium Power Linear and Switching Applications
Complement to BD433, BD435 and BD437 respectively

TO-126 2.Collector 3.Base

1. Emitter

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : BD434 : BD436 : BD438 VCES Collector-Emitter Voltage : BD434 : BD436 : BD438 Collector-Emitter Voltage : BD434 : BD436 : BD438 Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25C) Junction Temperature Storage Temperature - 22 - 32 - 45 - 22 - 32 - 45 - 22 - 32 - 45 -5 -4 -7 -1 36 150 - 65 ~ 150 V V V V V V V V V V A A A W C C Value Units

VCEO

VEBO IC ICP IB PC TJ TSTG

2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001

BD434/436/438

Electrical Characteristics TC=25C unless otherwise noted

Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : BD434 : BD436 : BD438 Collector Cut-off Current : BD434 : BD436 : BD438 ICEO Collector Cut-off Current : BD434 : BD436 : BD438 IEBO hFE Emitter Cut-off Current * DC Current Gain : BD434/436 : BD438 : ALL DEVICE : BD434/436 : BD438 VCE(sat) * Collector-Emitter Saturation Voltage : BD434 : BD436 : BD438 * Base-Emitter ON Voltage : BD434 : BD436 : BD438 Current Gain Bandwidth Product VCE = - 5V, IC = - 10mA VCE = - 1V, IC = - 500mA VCE = - 1V, IC = - 2A 40 30 85 50 40 140 140 140 VCE = - 22V, VBE = 0 VCE = - 32V, VBE = 0 VCE = - 45V, VBE = 0 VEB = - 5V, IC = 0 - 100 - 100 - 100 -1 A A A mA Test Condition IC = - 100mA, IB = 0 Min. - 22 - 32 - 45 - 100 - 100 - 100 Typ. Max. Units V V V A A A

ICBO

VCB = - 22V, IE = 0 VCB = - 32V, IE = 0 VCB = - 45V, IE = 0

IC = - 2A, IB = - 0.2A

- 0.2 - 0.2 - 0.2

- 0.5 - 0.5 - 0.6 - 1.1 - 1.1 - 1.2

V V V V V V MHz

VBE(on)

VCE = - 1V, IC = - 2A

fT

VCE = - 1V, IC = - 250mA

* Pulse Test: PW=300s, duty Cycle=1.5% Pulsed

2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001

BD434/436/438

Typical Characteristics

1000

-1

100

VCE(sat)[V], SATURATION VOLTAGE

VCE = -1V

IC = 10 IB

hFE, DC CURRENT GAIN

-0.1

10

1 -0.01

-0.1

-1

-10

-100

-0.01 -0.1

-1

-10

IC[A], COLLECTOR CURRENT

IC[A], COLLECTOR CURRENT

Figure 1. DC current Gain

Figure 2. Collector-Emitter Saturation Voltage

-5.0 -4.5

-1000

VCE = -1V

IC[A], COLLECTOR CURRENT

-4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 -0.0 -0.0

CCBO(pF), COLLECTOR BASE CAPACITANCE

-100

-10

-0.3

-0.5

-0.8

-1.0

-1.3

-1.5

-1.8

-2.0

-1 -0.1

-1

-10

-100

-1000

VBE[V], BASE-EMITTER VOLTAGE

VCB[V], COLLECTOR BASE VOLTAGE

Figure 3. Base-Emitter On Voltage

Figure 4. Collector-Base Capacitance

-10

IC MAX. (Pulsed)
10 1m ms s
10 s

48

42

100s

IC[A], COLLECTOR CURRENT

IC Max. (Continuous)

DC

PC[W], POWER DISSIPATION

-100

36

30

-1

24

18

12

-0.1 -1

BD434 BD436 BD438

-10

0 0 25 50
o

75

100

125

150

175

200

VCE [V], COLLECTOR-EMITTER VOLTAGE

TC[ C], CASE TEMPERATURE

Figure 5. Safe Operating Area

Figure 6. Power Derating

2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001

BD434/436/438

Package Demensions

TO-126
0.10

3.90

8.00 0.30

3.25 0.20

14.20MAX

3.20 0.10

11.00

0.20

(1.00) 0.75 0.10 1.60 0.10 0.75 0.10

0.30

(0.50) 1.75 0.20

#1 2.28TYP [2.280.20] 2.28TYP [2.280.20]

13.06

16.10

0.20

0.50 0.05

+0.10

Dimensions in Millimeters
2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

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PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Preliminary

No Identification Needed

Full Production

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Not In Production

2001 Fairchild Semiconductor Corporation

Rev. H2