BC182B

BC182B
NPN General Purpose Amplifier
This device is designed for general purpose amplifier application at collector currents to 100mA. Sourced from process 10.

TO-92

1. Collector 2. Base 3. Emitter

Absolute Maximum Ratings TC=25C unless otherwise noted

Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Storage Junction Temperature Range Value 50 60 6 100 - 55 ~ 150 Units V V V mA C

Electrical Characteristics TC=25C unless otherwise noted

Symbol Parameter Test Condition IC = 2mA, IB = 0 IC = 10A, IE = 0 IE = 10A, IC = 0 VCB = 50V, VBE = 0 VEB = 4V, IE = 0 VCE = 5V, IC = 10A VCE = 5V, IC = 100mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5mA IC = 100mA, IB = 5mA VCE = 5V, IC = 2mA VCE = 5V, IC = 10mA, f = 100MHz VCE = 10V, IC = 0, f = 1MHz VCE = 5V, IC = 2mA, f = 1KHz VCE = 5V, IC = 0.2mA RS = 2K, f = 1KHz, BW = 200Hz 240 0.55 150 5 500 10 dB 40 80 0.25 0.6 1.2 0.7 V V V MHz pF Min. 50 60 6 15 15 Typ. Max. Units V V V nA nA Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage V(BR)CBO V(BR)EBO ICBO IEBO Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter-Base Leakage Current

On Characteristics hFE DC Current Gain VCE(sat) VBE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage

Dynamic Characteristics fT Current Gain Bandwidth Product Cob hfe NF Output Capacitance Small Signal Current Gain Noise Figure

2003 Fairchild Semiconductor Corporation

Rev. A, August 2003

BC182B

Thermal Characteristics TA=25C unless otherwise noted

Symbol PD RJA RJC Parameter Total Device Dissipation @TA=25C Derate above 25C Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Max. 350 2.8 357 125 Units mW mW/C mW/C C/W

2003 Fairchild Semiconductor Corporation

Rev. A, August 2003

BC182B

Package Dimensions

TO-92
4.58 0.15
+0.25

0.46

14.47 0.40

0.10

4.58 0.20

1.27TYP [1.27 0.20] 3.60

0.20

1.27TYP [1.27 0.20]

0.38 0.05

+0.10

3.86MAX

1.02 0.10

0.38 0.05

+0.10

(R2.29)

(0.25)

Dimensions in Millimeters
2003 Fairchild Semiconductor Corporation Rev. A, August 2003

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PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Preliminary

No Identification Needed

Full Production

Obsolete

Not In Production

2003 Fairchild Semiconductor Corporation

Rev. I3