N

MPS8050
C BE

MPS8050

Discrete POWER & Signal Technologies

TO-92

NPN General Purpose Amplifier

This device is designed for general purpose audio amplifier applications at collector currents to 500 mA. Sourced from Process 30.

Absolute Maximum Ratings*

Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

TA = 25C unless otherwise noted

Parameter

Value
25 40 6.0 1.0 -55 to +150

Units
V V V A C

Operating and Storage Junction Temperature Range

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJC RJA

TA = 25C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient

Max
MPS8050 625 5.0 83.3 200

Units
mW mW/C C/W C/W

MPS8050

NPN General Purpose Amplifier

(continued)

Electrical Characteristics
Symbol Parameter

TA = 25C unless otherwise noted

Test Conditions

Min

Max

Units

OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICES Collector-Emitter Sustaining Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Collector-Cutoff Current I C = 30 mA, IB = 0 I C = 100 A, I E = 0 I E = 100 A, IC = 0 VCB = 35 V, IE = 0 VCE = 20 V, IE = 0 25 40 6.0 0.1 75 V V V A nA

ON CHARACTERISTICS
hFE DC Current Gain I C = 5.0 mA, VCE = 1.0 I C = 100 mA, VCE = 1.0 I C = 800 mA, VCE = 1.0 I C = 800 mA, IB = 80 mA I C = 800 mA, IB = 80 mA 45 80 40 300 0.5 1.2 V V

VCE(sat ) VBE( sat)

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage

*Pulse Test: Pulse Width 300 s, Duty Cycle 1.0%

Typical Characteristics
V CESAT- COLLECTOR EMITTER VOLTAGE (V)

h FE - TYPICAL PULSED CURRENT GAIN

Typical Pulsed Current Gain vs Collector Current

300 250 200 150 100 50 1 IC 10 100 - COLLECTOR CURRENT (A)
P 30

Collector-Emitter Saturation Voltage vs Collector Current

0.4 = 10

VCE = 1V
125 C

0.3

125 C

25 C

0.2

25 C

- 40 C

0.1

- 40 C

1000

0 10

100 I C - COLLECTOR CURRENT (mA)

P 30

1000

1.2

= 10

V BEON - BASE EMITTER ON VOLTAGE (V)

VBESAT- BASE EMITTER VOLTAGE (V)

Base-Emitter Saturation Voltage vs Collector Current

Base Emitter ON Voltage vs Collector Current

1
- 40 C

1
- 40 C 25 C 125 C

0.8
25 C

0.8

0.6
125 C

0.4 0.2 0 V
CE

0.6

= 1V

0.4 10

100 I C - COLLECTOR CURRENT (mA)

1000

10 100 I C - COLLECTOR CURRENT (mA)

P 30

1000

MPS8050

NPN General Purpose Amplifier

(continued)

Typical Characteristics

(continued)

V CE - COLLECTOR-EMITTER VOLTAGE (V)

Collector-Cutoff Current vs. Ambient Temperature

ICBO- COLLECTOR CURRENT (nA) 10 VCB = 40V 1

Collector Saturation Region

2

Ta = 25 C

1.5

0.1

0.5

Ic =

5 mA

100mA

800mA

0.01

0.001 25

0 2000 4000 6000 8000 P 30 20000 40000

50 75 100 TA - AMBIENT TEMPERATURE ( C)

125

IB - BASE CURRENT (uA)

BVCER - BREAKDOWN VOLTAGE (V)

Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base

38

Input and Output Capacitance vs Reverse Voltage

100

f = 1.0 MHz CAPACITANCE (pF)

Cib
10

37 36 35 34 33 32 0.1

Cob

10

100

1000

0.1 0.1

10

100

RESISTANCE (k )

V ce - COLLECTOR VOLTAGE(V)

f T - GAIN BANDWIDTH PRODUCT (MHz)

Gain Bandwidth Product vs Collector Current

1000

Power Dissipation vs Ambient Temperature

700 PD - POWER DISSIPATION (mW) 600 500 400 300 200 100 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150

Vce = 10V
800

TO-92

600

400

200

0 1 10 20 50 100

IC - COLLECTOR CURRENT (mA)

This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.