11 Datasheet Joca

VSK.170PbF, .
250PbF Series
Vishay High Power Products
SCR/SCR and SCR/Diode (MAGN-A-PAKTM Power Modules), 170/250 A

FEATURES
High voltage Electrically isolated base plate 3500 VRMS isolating voltage Industrial standard package Simplified mechanical designs, rapid assembly High surge capability Large creepage distances Lead (Pb)-free Designed and qualified for industrial level
RoHS
COMPLIANT
DESCRIPTION
MAGN-A-PAKTM
PRODUCT SUMMARY
IT(AV) 170/250 A
This new VSK series of MAGN-A-PAKTM modules uses high voltage power thyristor/thyristor and thyristor/diode in seven basic configurations. The semiconductors are electrically isolated from the metal base, allowing common heatsinks and compact assemblies to be built. They can be interconnected to form single phase or three phase bridges or as AC-switches when modules are connected in anti-parallel mode. These modules are intended for general purpose applications such as battery chargers, welders, motor drives, UPS, etc.
MAJOR RATINGS AND CHARACTERISTICS

SYMBOL IT(AV) IT(RMS) ITSM I2 t I2t VDRM/VRRM TJ Range 50 Hz 60 Hz 50 Hz 60 Hz CHARACTERISTICS 85 C VSK.170.. 170 377 5100 5350 131 119 1310 Up to 1600 - 40 to 130 VSK.250.. 250 555 8500 8900 361 330 3610 kA2s kA2s V C A UNITS
ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS

TYPE NUMBER VOLTAGE CODE 04 08 VSK.170VSK.25010 12 14 16 VRRM/VDRM, MAXIMUM REPETITIVE PEAK REVERSE AND OFF-STATE BLOCKING VOLTAGE V 400 800 1000 1200 1400 1600 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 500 900 1100 1300 1500 1700 50 IRRM/IDRM AT 130 C MAXIMUM mA
Document Number: 94417 Revision: 22-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com 1
VSK.170PbF, .250PbF Series

ON-STATE CONDUCTION
PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180 conduction, half sine wave As AC switch t = 10 ms Maximum peak, one-cycle on-state non-repetitive, surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2 t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t VT(TO)1 VT(TO)2 rt1 rt2 VTM IH IL No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied Sinusoidal half wave, initial TJ = TJ maximum VSK.170 170 85 377 5100 5350 4300 4500 131 119 92.5 84.4 1310 0.89 1.12 1.34 0.96 1.60 500 1000 VSK.250 250 85 555 8500 8900 7150 7500 361 330 255 233 3610 0.97 1.00 0.60 0.57 1.44 500 1000 mA V m kA2s V kA2s A UNITS A C
t = 0.1 to 10 ms, no voltage reapplied (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV) < I < x IT(AV)), TJ = TJ maximum (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV) < I < x IT(AV)), TJ = TJ maximum ITM = x IT(AV), TJ = TJ maximum, 180 conduction, average power = VT(TO) x IT(AV) + rf x (IT(RMS))2 Anode supply = 12 V, initial IT = 30 A, TJ = 25 C Anode supply = 12 V, resistive load = 1 , gate pulse: 10 V, 100 s, TJ = 25 C
Low level value or threshold voltage High level value of threshold voltage Low level value on-state slope resistance High level value on-state slope resistance Maximum on-state voltage drop Maximum holding current Maximum latching current
SWITCHING
PARAMETER Typical delay time Typical rise time Typical turn-off time SYMBOL td tr tq TEST CONDITIONS TJ = 25 C, gate current = 1 A dIg/dt = 1 A/s Vd = 0.67 % VDRM ITM = 300 A; dI/dt = 15 A/s; TJ = TJ maximum; VR = 50 V; dV/dt = 20 V/s; gate 0 V, 100 VSK.170 VSK.250 UNITS 1.0 2.0 50 - 150 s
BLOCKING
PARAMETER Maximum peak reverse and off-state leakage current RMS insulation voltage Critical rate of rise of off-state voltage SYMBOL IRRM, IDRM VINS dV/dt TEST CONDITIONS TJ = TJ maximum 50 Hz, circuit to base, all terminals shorted, 25 C, 1 s TJ = TJ maximum, exponential to 67 % rated VDRM VSK.170 VSK.250 50 3000 1000 UNITS mA V V/s
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SCR/SCR and SCR/Diode Vishay High Power Products TM Power Modules), 170/250 A (MAGN-A-PAK
TRIGGERING
PARAMETER Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage SYMBOL PGM PG(AV) + IGM - VGT TEST CONDITIONS tp 5 ms, TJ = TJ maximum f = 50 Hz, TJ = TJ maximum tp 5 ms, TJ = TJ maximum tp 5 ms, TJ = TJ maximum TJ = - 40 C Maximum required DC gate voltage to trigger VGT TJ = 25 C TJ = TJ maximum TJ = - 40 C Maximum required DC gate current to trigger IGT TJ = 25 C TJ = TJ maximum Maximum gate voltage that will not trigger Maximum gate current that willnot trigger Maximum rate of rise of turned-on current VGD IGD dI/dt TJ = TJ maximum, rated VDRM applied TJ = TJ maximum, rated VDRM applied TJ = TJ maximum, ITM = 400 A, rated VDRM applied Anode supply = 12 V, resistive load; Ra = 1 Anode supply = 12 V, resistive load; Ra = 1 VSK.170 VSK.250 UNITS W A 10.0 2.0 3.0 5.0 4.0 3.0 2.0 350 200 100 0.25 10.0 500 V mA A/s mA V
THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER Junction operating temperature range Storage temperature range Maximum thermal resistance, junction to case per junction Typical thermal resistance, case to heatsink per module MAP to heatsink Mounting torque 10 % busbar to MAP Approximate weight Case style SYMBOL TJ TStg RthJC RthCS DC operation Mounting surface flat, smooth and greased A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the compound. TEST CONDITIONS VSK.170 VSK.250 UNITS C - 40 to 130 - 40 to 150 0.17 0.02 0.125 K/W 0.02
4 to 6
Nm
500 17.8 MAGN-A-PAK
g oz.
R CONDUCTION PER JUNCTION

DEVICES VSK.170VSK.250SINUSOIDAL CONDUCTION AT TJ MAXIMUM 180 0.009 0.009 120 0.010 0.010 90 0.010 0.014 60 0.020 0.020 30 0.032 0.032 RECTANGULAR CONDUCTION AT TJ MAXIMUM 180 0.007 0.007 120 0.011 0.011 90 0.015 0.015 60 0.020 0.020 30 0.033 0.033 UNITS
K/W
Note Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
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Maximum Average On-state Power Loss (W)
130 Maximum Allowable Case Temperature (C) 120 110 100 90 80 70 60 0 40
VSK.170.. Series RthJC (DC) = 0.17 K/W
350 300 250 200 150 100 50 0 0 50 100 150 200 250 300 Average On-state Current (A)
Conduction Period
DC 180 120 90 60 30 RMS Limit
Conduction Angle
30
60 90 120 180 80 120 160 200
VSK.170.. Series Per Junction TJ = 125C
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - On-State Power Loss Characteristics
Maximum Allowable Case Temperature (C)
120 110 100 90 30 80 70 60 0 50 100
VSK.170.. Series R thJC (DC) = 0.17 K/W
Peak Half Sine Wave On-state Current (A)
130
5000 4500 4000 3500 3000 2500 2000 1 10 100

Number Of Equal Amplitude Half Cycle Current Pulses (N)
At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 130C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
Conduction Period
60 90 120 180 DC 250 300
VSK.170.. Series Per Junction
150
200
Fig. 5 - Maximum Non-Repetitive Surge Current
300 250 200 150 100 50 0 0 40 80 120 160 200 Average On-state Current (A) 180 120 90 60 30
5000 4500 4000 3500 3000 2500
Maximum Non Repetitive Surge Curren t Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained . Initial TJ = 130C No Voltage Reapplied Rated VRRM Reapplied
RMS Limit
Conduction Angle
VSK.170.. Series Per Junction 0.1

Pulse Train Duration (s)
2000 0.01
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Maximum Total On-state Power Loss (W) 400 350 180 120 90 60 30
0. 25
0. 3
0. 2
K/ W
16 0. W K/
0.1 2 W K/
R th S
8 0. 0 W K/
300 250
200 Conduction Angle 150 100 50 0 0 50
K/ W
K/ W
=0 .04 K/ W
0.3 5
-D
K/W
e lt aR
VSK.170.. Series Per Module TJ = 130C 0 100 150 200 250 300 350 400 Total RMS Output Current (A) 20 40 60 80 100 120
Maximum Allowable Ambient Temperature (C)
1000 Maximum Total Power Loss (W)

S R th
0.
900 800 700 600 500 400 300 200 100 0 0 50 100 150 200 250 300 0 350 2 x VSK.170.. Series Single Phase Bridge Connected TJ = 130C 180 (Sine) 180 (Rect)
0. 1
0.1
04
0. 08
06 0.
W K/
K/ W
K/ W
. 02 =0
W K/
W K/
0. 1 6
0 .2
2K /W
-D
K/ W
e lt a
0. 2 5K /W
K/ W
0.35
K/ W
20
40
60
80
100
120
Total Output Current (A)
1600
=0 SA R th
Maximum Total Power Loss (W)
1400 1200 1000 800

600
0.0
0. 05
03 0.
K/ W
W K/
.01
120 (Rect)
8K /W
W K/ el t -D
400 200 0 0 100 200
3 x VSK.170.. Series Three Phase Bridge Connected TJ = 130C 300 400
0. 1 K/ W 0. 1 2K /W 0. 1 6 K/ W 0.25 K/ W
aR
0 500
20
40
60
80
100
120
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Maximum Average On-state Power Loss (W) 500 450 400 350 300 250 200 150 100 50 0 0 50 100 150 200 250 300 350 400 Average On-state Current (A) RMS Limit
Conduction Period
130 120 110 100 90
VSK.250.. Series RthJC(DC) = 0.125 K/W
Conduction Angle
DC 180 120 90 60 30
30 80 70 60 0 50 100 150 200 250 300 Average On-state Current (A) 60 90 120 180
120 110 100 90 80 70 60 0 100
VSK.250.. Series RthJC (DC) = 0.125 K/W
130
7500 7000 6500 6000 5500 5000 4500 4000 3500 1
At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 130C
@ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
Conduction Period
30 60 90 120 180 200 300 DC 400 500
VSK.250.. Series Per Junction 10 100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
350 300 250 200 150 100 50 0 0 50 100 150 200 250 Average On-state Current (A)
Conduction Angle
9000 8000 7000 6000 5000 4000
180 120 90 60 30 RMS Limit
Maximum Non Repetitive Surge Curren t Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained . Initial TJ = 130C No Voltage Reapplied Rated VRRM Reapplied
VSK.250.. Series Per Junction 0.1 Pulse Train Duration (s) 1
3000 0.01
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Maximum Total On-state Power Loss (W)
700
0.0
SA R th
600
500
Conduction angle
180 120 90 60 30
0. 12
0. 08 W K/
K/ W
/W 5K
=0
0.
.02
16 K/ W
W K/
0.2 0
-D
400 300 200 100 0 0 100 200 300 400 500 VSK.250.. Series Per Module TJ = 130C
K/ W 0.2 5K /W
e lt a R
0.3
K/ W
0 600
20
40
60
80
100
120
Total RMS Output Current (A)
1400
0.0
Maximum Total Power Loss (W)
1200
1000
0. 05
0.0 6
0. 04
Rt
0. 03
/W 2K W K/
A hS
K/ W
K/ W
K/ W
=0 . 01 W K/
800
600
180 (Sine) 180 (Rect)
-D e lt aR
0 .1
0.1
K/ W
2K /W 0 .16 K/ W
400 200 0 0 100 200
2 x VSK.250.. Series Single Phase Bridge Connected TJ = 130C 300 400
0 .3 K /W
500 0
20
40
60
80
100
120
2000 Maximum Total Power Loss (W)

1800
0.
0. 06
0. 04 W K/
K/ W
05
03 0. W K/
R th
SA
1600 1400
1200
=0
120 (Rect)
K/ W 0 .0 8K /W
.01 K/ W
1000 800
600
400 200
0
3 x VSK.250.. Series Three Phase Bridge Connected TJ = 130C 0 100 200 300 400 500 600
0.1 K/ W 0. 1 2K /W 0.1 6K /W 0.2 0K /W

0.25 K/ W
-D e lt aR
700 0
20
40
60
80
100
120
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Typical Reverse Recovery Charge - Qrr (C)
1800 1600 1400 1200 1000 800 600 400 200 0 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of On-state Current - di/dt (A/s) VSK.170.. Series TJ = 130 C Per Junction
ITM = 800 A
10000 Instantaneous Forward Current (V)
Tj = 25C Tj = 130C
500 A 300 A 200 A 100 A 50 A
1000
VSK.170 Series Per Junction 100 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Instantaneous Forward Voltage (V) 5
Fig. 19 - On-State Voltage Drop Characteristics
Fig. 21 - Reverse Recovery Charge Characteristics
Typical Reverse Recovery Charge - Qrr (C)
10000 Instantaneous Forward Current (V)
2400
VSK.250.. Series 2200 TT == 130 C JJ 130 C Per Junction 2000 Per Junction
1800 1600 1400 1200 1000 800 600 400 200 0
ITM = 800 A 500 A 300 A 200 A 100 A 50 A
Tj = 25C Tj = 130C
1000
VSK.250 Series Per Junction 100 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 Instantaneous Forward Voltage (V)
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of On-state Current - di/dt (A/s)
Fig. 20 - On-State Voltage Drop Characteristics
Fig. 22 - Reverse Recovery Charge Characteristics
100
Instantaneous Gate Voltage (V)
Rectangular gate pulse a) Recommended load line for rated di/dt : 20 V, 10 ohms; tr < =1s b) Recommended load line for <=30% rated di/dt : 10V, 20ohms tr<=1 s 10
(1) (2) (3) (4)
PGM PGM PGM PGM
= = = =
10W, tp = 4ms 20W, tp = 2ms 40W, tp = 1ms 60W, tp = 0.66ms
(a)
Tj=-40 C
(b)
Tj=25 C Tj=125 C
1 VGD IGD 0.1 0.001 0.01
(1)
(2) (3) (4)
VSK.170/250 Series
Frequency Limited by PG(AV)
0.1
10
100
Instantaneous Gate Current (A)
Fig. 23 - Gate Characteristics
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Transient Thermal Impedance Z thJC (K/W)
1 Steady State Value: R thJC = 0.17 K/W R thJC = 0.125 K/W 0.1 (DC Operation) VSK.250.. Series VSK.170.. Series
0.01
0.001 0.001
0.01
0.1
10
100
Square Wave Pulse Duration (s)
Fig. 24 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Device code
VSK
1 1 2 3 4 5 -
T
2
250
3
16
4
PbF
5
Module type Circuit configuration (see dimensions - link at the end of datasheet) Current rating Voltage code x 100 = VRRM (see Voltage Ratings table) Lead (Pb)-free
Note To order the optional hardware go to www.vishay.com/doc?95172
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CIRCUIT CONFIGURATION
VSKT... ~ ~ VSKH... VSKL... ~ ~
K1G1 G2 K2
K1G1
Available from 400 V to 1600 V
VSKU...
VSKV...
VSKK...
VSKN...
K1G1 G2 K2
+ K1G1 G2 K2
G2 K2
Available on 1600 V Contact factory for different requirement
LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95086
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Legal Disclaimer Notice

Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishays terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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VSK.170PbF, .

SCR/SCR and SCR/Diode (MAGN-A-PAKTM Power Modules), 170/250 A

MAJOR RATINGS AND CHARACTERISTICS

ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS

Document Number: 94417 Revision: 22-Apr-08

For technical questions, contact: ind-modules@vishay.com

VSK.170PbF, .250PbF Series

SCR/SCR and SCR/Diode (MAGN-A-PAKTM Power Modules), 170/250 A

For technical questions, contact: ind-modules@vishay.com

Document Number: 94417 Revision: 22-Apr-08

VSK.170PbF, .250PbF Series

THERMAL AND MECHANICAL SPECIFICATIONS

500 17.8 MAGN-A-PAK

R CONDUCTION PER JUNCTION

Document Number: 94417 Revision: 22-Apr-08

For technical questions, contact: ind-modules@vishay.com

VSK.170PbF, .250PbF Series

130 Maximum Allowable Case Temperature (C) 120 110 100 90 80 70 60 0 40

VSK.170.. Series RthJC (DC) = 0.17 K/W

DC 180 120 90 60 30 RMS Limit

60 90 120 180 80 120 160 200

VSK.170.. Series Per Junction TJ = 125C

Average On-state Current (A)

Fig. 1 - Current Ratings Characteristics

Fig. 4 - On-State Power Loss Characteristics

Maximum Allowable Case Temperature (C)

120 110 100 90 30 80 70 60 0 50 100

VSK.170.. Series R thJC (DC) = 0.17 K/W

Peak Half Sine Wave On-state Current (A)

5000 4500 4000 3500 3000 2500 2000 1 10 100

60 90 120 180 DC 250 300

VSK.170.. Series Per Junction

Average On-state Current (A)

Fig. 2 - Current Ratings Characteristics

Fig. 5 - Maximum Non-Repetitive Surge Current

Maximum Average On-state Power Loss (W)

Peak Half Sine Wave On-state Current (A)

5000 4500 4000 3500 3000 2500

VSK.170.. Series Per Junction TJ = 125C

VSK.170.. Series Per Junction 0.1

Fig. 3 - On-State Power Loss Characteristics

Fig. 6 - Maximum Non-Repetitive Surge Current

For technical questions, contact: ind-modules@vishay.com

Document Number: 94417 Revision: 22-Apr-08

VSK.170PbF, .250PbF Series

Maximum Allowable Ambient Temperature (C)

Fig. 7 - On-State Power Loss Characteristics

1000 Maximum Total Power Loss (W)

Total Output Current (A)

Maximum Allowable Ambient Temperature (C)

Fig. 8 - On-State Power Loss Characteristics

Maximum Total Power Loss (W)

1400 1200 1000 800

400 200 0 0 100 200

3 x VSK.170.. Series Three Phase Bridge Connected TJ = 130C 300 400

Total Output Current (A)

Maximum Allowable Ambient Temperature (C)

Fig. 9 - On-State Power Loss Characteristics

Document Number: 94417 Revision: 22-Apr-08

For technical questions, contact: ind-modules@vishay.com

VSK.170PbF, .250PbF Series

Maximum Allowable Case Temperature (C)

130 120 110 100 90