Académique Documents
Professionnel Documents
Culture Documents
G DS
TO-220AB IRFB4410
G DS
D2Pak IRFS4410
G DS
TO-262 IRFSL4410
Parameter
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current d Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery f Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Single Pulse Avalanche Energy e Avalanche Current c Repetitive Avalanche Energy g
Max.
96c 68c 380 250 1.6 20 19 -55 to + 175 300 10lbxin (1.1Nxm) 220 See Fig. 14, 15, 16a, 16b
Units
A
W W/C V V/ns C
Avalanche Characteristics
EAS (Thermally limited) IAR EAR mJ A mJ
Thermal Resistance
Symbol
RJC RCS RJA RJA
Parameter
Junction-to-Case k Case-to-Sink, Flat Greased Surface , TO-220 Junction-to-Ambient, TO-220 k Junction-to-Ambient (PCB Mount) , D Pak jk
2
Typ.
0.50
Max.
0.61 62 40
Units
C/W
www.irf.com
1
11/4/04
IRFB4410/IRFS4410/IRFSL4410
Parameter
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Gate Input Resistance
Conditions
V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mAd m VGS = 10V, ID = 58A g V VDS = VGS, ID = 150A A VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125C nA VGS = 20V VGS = -20V f = 1MHz, open drain
Parameter
Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Effective Output Capacitance (Time Related)h
Conditions
VDS = 50V, ID = 58A ID = 58A VDS = 80V VGS = 10V g VDD = 65V ID = 58A RG = 4.1 VGS = 10V g VGS = 0V VDS = 50V = 1.0MHz VGS = 0V, VDS = 0V to 80V i, See Fig.11 VGS = 0V, VDS = 0V to 80V h, See Fig. 5
ns
pF
Diode Characteristics
Symbol
IS ISM VSD trr Qrr IRRM ton
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) d Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time
Conditions
MOSFET symbol showing the integral reverse
G D
S p-n junction diode. 1.3 V TJ = 25C, IS = 58A, VGS = 0V g VR = 85V, 38 56 ns TJ = 25C TJ = 125C IF = 58A 51 77 di/dt = 100A/s g 61 92 nC TJ = 25C TJ = 125C 110 170 2.8 A TJ = 25C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes: Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25C, L = 0.14mH RG = 25, IAS = 58A, VGS =10V. Part not recommended for use above this value. ISD 58A, di/dt 650A/s, VDD V(BR)DSS, TJ 175C. Pulse width 400s; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended
footprint and soldering techniques refer to application note #AN-994. Coss while VDS is rising from 0 to 80% VDSS.
www.irf.com
IRFB4410/IRFS4410/IRFSL4410
1000
TOP VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V 4.5V
1000
TOP VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V 4.5V
100
BOTTOM
100
BOTTOM
10
10
4.5V
1 4.5V
100
1000
2.5
2.0
1.5
1.0
C, Capacitance(pF)
10000 Ciss
1000
Coss Crss
20
40
60
80
100
120
www.irf.com
IRFB4410/IRFS4410/IRFSL4410
1000
1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100sec 1msec
100 T J = 175C
100
10
T J = 25C
VGS = 0V 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VSD, Source-to-Drain Voltage (V)
Limited By Package
125
120
115
110
105
T J , Temperature ( C )
1.5
Energy (J)
1.0
0.5
25
50
75
100
125
150
175
www.irf.com
IRFB4410/IRFS4410/IRFSL4410
1
D = 0.50
Thermal Response ( Z thJC )
0.1
0.01
0.02 0.01
R1 R1 J 1 2
R2 R2 C 2
0.001
0.0001
100
Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses
10
tav (sec)
200
150
100
50
Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav f ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
175
PD (ave) = 1/2 ( 1.3BVIav) = DT/ ZthJC Iav = 2DT/ [1.3BVZth] EAS (AR) = PD (ave)tav
www.irf.com
IRFB4410/IRFS4410/IRFSL4410
5.0
20
4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 200
15
IRRM (A)
ID ID ID ID
10
0 100 200 300 400 500 600 700 800 900 1000 dif/dt (A/s)
T J , Temperature ( C )
15
300 250
Qrr (nC)
IRRM (A)
10
200 150
100 50 0
0 100 200 300 400 500 600 700 800 900 1000 dif/dt (A/s)
100 200 300 400 500 600 700 800 900 1000 dif/dt (A/s)
200 150 100 50 0 100 200 300 400 500 600 700 800 900 1000 dif/dt (A/s)
I = 38A F V = 85V R T = 25C _____ J T = 125C ---------J
www.irf.com
IRFB4410/IRFS4410/IRFSL4410
D.U.T
Driver Gate Drive
P.W.
Period
D=
Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
RG
dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage
Body Diode
Forward Drop
* VGS = 5V for Logic Level Devices Fig 20. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs
V(BR)DSS
15V
tp
DRIVER
VDS
RG
VGS 20V
D.U.T
IAS tp
+ V - DD
0.01
I AS
+
VDD D.U.T VGS Pulse Width < 1s Duty Factor < 0.1%
90%
VDS
10%
VGS
td(on) tr td(off) tf
L
0
DUT 1K
VCC
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
www.irf.com
IRFB4410/IRFS4410/IRFSL4410
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415) 10.29 (.405)
3X
0.36 (.014)
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
www.irf.com
IRFB4410/IRFS4410/IRFSL4410
TO-262 Package Outline (Dimensions are shown in millimeters (inches))
OR
DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPU8P9@ Q6SUIVH7@S 96U@8P9@ Q29@TDBI6U@TG@69AS@@ QSP9V8UPQUDPI6G `@6S&2 ((& X@@F ( 626TT@H7G`TDU@8P9@
www.irf.com
IRFB4410/IRFS4410/IRFSL4410
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
OR
10
www.irf.com
IRFB4410/IRFS4410/IRFSL4410
D2Pak Tape & Reel Information
TRR
1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)
TRL
10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178)
FEED DIRECTION
NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IRs Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/04
www.irf.com
11
This datasheet has been downloaded from: www.DatasheetCatalog.com Datasheets for electronic components.