BSIMIMG Model Version 102-70 (Level=78, 201) BSIM-IMG Independent Mult-Gate MOSFET Model 17.2 BSIM-IMG Model Version 102.7.0 (Level=78, 301) 17.2.1 Introduction The BSIM-IMG 102.7.0 models the independent double-gate structure as a four terminal device, containing the source (s), drain (d), front gate (fi), and back gate (bg) terminals. The two gates (¢.g., Infg, 2-bg) are allowed to have different workfunctions (Ay), As) and dielectric thicknesses (Ty.13 Ta2)- They can also be biased separately at different voltages, Physical surface-potential-based formulations are derived in both intrinsic and extrinsic models of BSIM-IMG. Surface potentials and integrated charge densities at the source and drain ends are obtained by solving the Poisson's equation in a fully-depleted, lightly-doped body and calculating with efficient analytical approximations. Since the surface potential equation is derived based on Poisson's equation, the model captures volume inversion effects, very well and shows excellent scalability compared with 2D device simulation To meet the requirements of future devices, new parameters has been included to model devices consisting of novel materials. This includes parameters for non-silicon channel devices and High-K gate insulators. Threshold Voltage (V) “1 Back Gate Bias (V) Figure 17-2 Threshold Voltage (Vy,) versus back-gate bias (Vpq) for different gate lengths in NMOS transistor with p-type substrate (p-wel), Symbols: TCAD; Lines: Model The back gate of a planar double-gate SOI FET is often used for tuning device threshold voltage (Vs). Therefore, the effect of back-gate on Vg, must also be addressed by the model The threshold voltage of FDSOI transistor is extracted from constant current method as shown in Figure 17-2. When the back gate bias (V..) is low, the threshold voltage follow a linear relationship. For higher back-gate bias, however, the back-gate effect slows down as a result of back surface accumulation, The strength of back-gate control is often quantified as y, defined as: ‘SILVACO_ 64 Confidential