4AK18

Silicon N-Channel Power MOS FET Array

ADE-208-1203 (Z) 1st. Edition Mar. 2001 Application

High speed power switching

Features
Low on-resistance R DS(on) 0.38 , VGS = 10 V, I D = 1 A R DS(on) 0.53 , VGS = 4 V, I D = 1 A Capable of 4 V gate drive Low drive current High speed switching High density mounting Suitable for motor driver, solenoid driver and lamp driver

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Outline

SP-10

3 D 4 G 2G

5 D 6 G

7 D 8 G

9 D

12 34 56 78 9 10

1S

S 10

1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9. Drain

Absolute Maximum Ratings (Ta = 25C) (1 Unit)

Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. 4 devices operation Symbol VDSS VGSS ID I D(pulse)* I DR Pch (Tc = 25C)* Pch* Tch Tstg
2 2 1

Rating 60 20 2.5 10 2.5 28 4 150 55 to +150

Unit V V A A A W W C C

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Electrical Characteristics (Ta = 25C) (1 Unit)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 60 20 1.0 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse Test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 1.2 Typ 0.25 0.40 2.0 240 115 35 4 15 80 40 1.0 70 Max 10 100 2.0 0.38 0.53 Unit V V A A V S pF pF pF ns ns ns ns V ns I F = 2 A, VGS = 0 I F = 2 A, VGS = 0 dIF/dt = 50 A/s Test conditions I D = 10 mA, VGS = 0 I G = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 50 V, VGS = 0 I D = 1 mA, VDS = 10 V ID = 1 A VGS = 10 V*1 ID = 1 A VGS = 4 V*1 ID = 1 A VDS = 10 V*1 VDS = 10 V VGS = 0 f = 1 MHz ID = 1 A VGS = 10 V RL = 30

Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance VGS(off) RDS(on)

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Maximum Channel Dissipation Curve 6 Channel Dissipation Pch (W) 5 4 3 2 1 30 Channel Dissipation Pch (W) Condition : Channel Dissipation of each die is identical 4 Device Operation 3 Device Operation 2 Device Operation 1 Device Operation Maximum Channel Dissipation Curve Condition : Channel Dissipation of each die is identical 4 Device Operation 3 Device Operation 2 Device Operation 1 Device Operation

20

10

25 75 50 100 125 Ambient Temperature Ta (C)

150

50 100 125 25 75 Case Temperature TC (C)

150

Maximum Safe Operation Area 100 30 10

O is per lim at ite ion d in by th R is

Typical Output Characteristics 5 4

10 V 5V 4V 3.5 V Pulse Test

Drain Current ID (A)

10 s
ar ea

Drain Current ID (A)

3
3V

) ot s s sh 0 m (1 10 1 n s tio ) m ra C 10 pe 5 O =2 C D (T C PW

3 1.0 0.3

DS

(o

n)

2.5 V VGS = 2 V

Ta = 25C 0.1

0
0.3 1.0 3 10 30 100 Drain to Source Voltage VDS (V)

6 2 4 8 10 Drain to Source Voltage VDS (V)

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Typical Transfer Characteristics 5
VDS = 10 V Pulse Test 75C TC= 25C Drain to Source Saturation Voltage VDS (on) (V) 25C

Drain to Source Saturation Voltage vs. Gate to Source Voltage 2.0 1.6
5A Pulse Test

4
Drain Current ID (A)

1.2

0.8
2A

0.4

ID = 1 A

3 1 2 4 Gate to Source Voltage VGS (V)

6 2 4 8 10 Gate to Source Voltage VGS (V)

Static Drain to Source on State Resistance RDS (on) ()

Static Drain to Source on State Resistance RDS (on) ()

Static Drain to Source on State Resistance vs. Drain Current 5

Pulse Test

Static Drain to Source on State Resistance vs. Temperature 1.0

Pulse Test

2 1.0 0.5
10 V VGS = 4 V

0.8
ID = 2 A

0.6
VGS = 4 V

1A

0.4
5A

0.2 0.1 0.05 0.2

0.2

VGS = 10 V

1 A, 2 A

2 0.5 1.0 5 10 Drain Current ID (A)

20

0 40

80 0 40 120 Case Temperature TC (C)

160

4AK18
Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) 10 5 Reverse Recovery Time trr (ns) VDS = 10 V 25C Pulse Test TC = 25C 500 di/dt = 50 A/s, Ta = 25C VGS = 0 Pulse Test Body to Drain Diode Reverse Recovery Time

200 100 50

2 1.0 0.5 75C

20 10 5 0.2

0.2 0.1 0.05

0.1

0.2 2 0.5 1.0 Drain Current ID (A)

0.5 1.0 2 5 10 Reverse Drain Current IDR (A)

20

Typical Capacitance vs. Drain to Source Voltage 1000 300 Capacitance C (pF) 100 30 10 3 1 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Ciss Coss Drain to Source Voltage VDS (V) VGS = 0 f = 1 MHz

Dynamic Input Characteristics

100 80 VDD = 50 V 25 V 60 VDS 40 20 VDD = 50 V 25 V 10 V 2 VGS ID = 2 A 8 4 10 V 12 20 16 Gate to Source Voltage VGS (V)

Crss

4 6 8 Gate Charge Qg (nc)

10

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Reverse Drain Current vs. Source to Drain Voltage Switching Characteristics 100 Reverse Drain Current IDR (A) td (off) 50 Switching Time t (ns) tf 20 tr 10 5 td (on) 2 1 0.05 VGS = 10 V VDD = 30 V PW = 2s, duty < 1 %

5 4 Pulse Test

10 V 15 V

2 5V 1 VGS = 0, 5 V

0 0.1 0.5 1.0 0.2 2 Drain Current ID (A) 5

0.8 0.4 1.2 2.0 1.6 Source to Drain Voltage VSD (V)

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Package Dimensions As of January, 2001
Unit: mm
26.5 0.3 4.0 0.2 10.0 0.3 2.5

1.82

2.54

1.4

0.55 0.1

10.5 0.5

1.5 0.2

0.55 0.06

+0.1

10

Hitachi Code JEDEC EIAJ Mass (reference value)

SP-10 2.9 g

4AK18
Cautions
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Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.

Colophon 2.0

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