NS ESIG E W D UCT R N OD R D FO NDE ITUTE P E OMM SUBST N R E C LE January 2002 NOT Data ISheet IRF540 SB POS

IRF540, RF1S540SM

28A, 100V, 0.077 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17421.

Features
28A, 100V rDS(ON) = 0.077 Single Pulse Avalanche Energy Rated Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature - TB334 Guidelines for Soldering Surface Mount Components to PC Boards

Symbol
D

Ordering Information
PART NUMBER IRF540 RF1S540SM PACKAGE TO-220AB TO-263AB BRAND IRF540
G

RF1S540SM
S

NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., RF1S540SM9A.

Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE)

JEDEC TO-263AB

GATE SOURCE

DRAIN (FLANGE)

2002 Fairchild Semiconductor Corporation

IRF540, RF1S540SM Rev. B

IRF540, RF1S540SM
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified IRF540, RF1S540SM 100 100 28 20 110 20 120 0.8 230 -55 to 175 300 260 UNITS V V A A A V W W/oC mJ oC
oC oC

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T pkg

CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE: 1. TJ = 25oC to TJ = 150oC.

Electrical Specifications
PARAMETER Drain to Source Breakdown Voltage Gate to Threshold Voltage Zero Gate Voltage Drain Current

TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS ID(ON) IGSS rDS(ON) gfs td(ON) tr td(OFF) tf Qg(TOT) Qgs Qgd CISS COSS CRSS LD Measured From the Contact Screw on Tab To Center of Die Measured From the Drain Lead, 6mm (0.25in) from Package to Center of Die Modified MOSFET Symbol Showing the Internal Devices Inductances
D LD G LS S

TEST CONDITIONS ID = 250A, VGS = 0V (Figure 10) VGS = VDS, ID = 250A VDS = 95V, VGS = 0V VDS = 0.8 x Rated BV DSS, VGS = 0V, TJ = 150oC VDS > ID(ON) x rDS(ON) MAX, VGS = 10V (Figure 7) VGS = 20V ID = 17A, VGS = 10V (Figures 8, 9) VDS 50V, ID = 17A (Figure 12) VDD = 50V, ID 28A, RG 9.1, RL = 1.7 MOSFET Switching Times are Essentially Independent of Operating Temperature VGS = 10V, ID = 28A, VDS = 0.8 x Rated BV DSS , Ig(REF) = 1.5mA (Figure 14) Gate Charge is Essentially Independent of Operating Temperature

MIN 100 2 28 8.7 -

TYP 0.060 13 15 70 40 50 38 8 21 1450 550 100 3.5

MAX 4 25 250 100 0.077 23 110 60 83 59 -

UNITS V V A A A nA S ns ns ns ns nC nC nC pF pF pF nH

On-State Drain Current (Note 2) Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain Miller Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Drain Inductance

VDS = 25V, VGS = 0V, f = 1MHz (Figure 11)

4.5

nH

Internal Source Inductance

LS

Measured From the Source Lead, 6mm (0.25in) From Header to Source Bonding Pad

7.5

nH

Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient

RJC RJA RJA Free Air Operation RF1S540SM Mounted on FR-4 Board with Minimum Mounting Pad

1.25 80 62

oC/W oC/W oC/W

2002 Fairchild Semiconductor Corporation

IRF540, RF1S540SM Rev. B

IRF540, RF1S540SM
Source to Drain Diode Specifications
PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode
G D

MIN -

TYP -

MAX 28 110

UNITS A A

Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovery Charge NOTES:

VSD trr QRR

TJ TJ TJ

= 25oC, ISD = 27A, VGS = 0V (Figure 13) = 25oC, ISD = 28A, dISD/dt = 100A/s = 25oC, ISD = 28A, dISD/dt = 100A/s

70 0.2

150 1.0

2.5 300 1.9

V ns C

2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 25V, starting TJ = 25oC, L = 440H, RG = 25, peak IAS = 28A.

Typical Performance Curves

1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 0.6 0.4 0.2 0 0 25

Unless Otherwise Specified

30

ID, DRAIN CURRENT (A)

24

18

12

0 125 50 75 100 TC , CASE TEMPERATURE (oC) 150 175 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE

10 ZJC, TRANSIENT THERMAL IMPEDANCE (oC/W)

1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 10-5 SINGLE PULSE 10-4 10-3 10-2 10-1 t1 t2 PDM

NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC 1 10 t1, RECTANGULAR PULSE DURATION (s)

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

2002 Fairchild Semiconductor Corporation

IRF540, RF1S540SM Rev. B

IRF540, RF1S540SM Typical Performance Curves

300 SINGLE PULSE TJ = MAX RATED TC = 25o C 50 ID, DRAIN CURRENT (A) VGS = 10V VGS = 8V VGS = 7V

Unless Otherwise Specified (Continued)

PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX

ID, DRAIN CURRENT (A)

100

40 30 20

100s 10

VGS = 6V

OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON)

1ms 10ms

VGS = 5V 10 VGS = 4V 0

1 1 10 100 300 VDS , DRAIN TO SOURCE VOLTAGE (V)

12 24 36 48 VDS, DRAIN TO SOURCE VOLTAGE (V)

60

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

FIGURE 5. OUTPUT CHARACTERISTICS

50
VGS = 8V VGS = 7V VGS = 10V 30 VGS = 6V ID(ON), ON-STATE DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) 40

100

PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX

VDS 50V

10

20 VGS = 5V 10 VGS = 4V 0 0 1 2 3 4 5 VDS, DRAIN TO SOURCE VOLTAGE (V)

175oC 1

25oC

0.1 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10

FIGURE 6. SATURATION CHARACTERISTICS

FIGURE 7. TRANSFER CHARACTERISTICS

1.0 rDS(ON), DRAIN TO SOURCE

0.8 ON RESISTANCE ()

NORMALIZED DRAIN TO SOURCE ON RESISTANCE

PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX

3.0

2.4

PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 10V, ID = 28A

0.6

1.8

0.4

1.2

0.2

VGS = 10V VGS = 20V 0 25 50 75 100 125

0.6

0 ID, DRAIN CURRENT (A)

0 -60 -40 -20

20

40

60

80 100 120 140 160 180

TJ , JUNCTION TEMPERATURE (oC)

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE

2002 Fairchild Semiconductor Corporation

IRF540, RF1S540SM Rev. B

IRF540, RF1S540SM Typical Performance Curves

1.25 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 250A

Unless Otherwise Specified (Continued)

3000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD CISS

1.15 C, CAPACITANCE (pF)

2400

1.05

1800

0.95

1200 COSS 600 CRSS

0.85

0.75 -60 -40 -20

20

40

60

80 100 120 140 160 180

10 VDS, DRAIN TO SOURCE VOLTAGE (V)

100

TJ , JUNCTION TEMPERATURE (oC)

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

20

16

25oC 12 175oC 8

ISD, SOURCE TO DRAIN CURRENT (A)

gfs, TRANSCONDUCTANCE (S)

PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDS 50V

1000 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX

100

175oC 25oC 10

0 0 10 20 30 40 50 ID , DRAIN CURRENT (A)

1 0 0.6 1.2 1.8 2.4 VSD, SOURCE TO DRAIN VOLTAGE (V) 3.0

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT

FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

20 VGS, GATE TO SOURCE VOLTAGE (V)

ID = 28A VDS = 50V

16 VDS = 20V 12 VDS = 80V 8

0 0 12 24 36 48 60 Qg , GATE CHARGE (nC)

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

2002 Fairchild Semiconductor Corporation

IRF540, RF1S540SM Rev. B

IRF540, RF1S540SM Test Circuits and Waveforms

VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP RG IAS VDD tP VDS VDD

0V

IAS 0.01

0 tAV

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT

FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

tON td(ON) tr RL VDS 90%

tOFF td(OFF) tf 90%

RG DUT

VDD

10% 90%

10%

VGS VGS 0 10%

50% PULSE WIDTH

50%

FIGURE 17. SWITCHING TIME TEST CIRCUIT

FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

CURRENT REGULATOR

VDS (ISOLATED SUPPLY)

VDD Qg(TOT) Qgd Qgs VGS

12V BATTERY

0.2F

50k 0.3F

SAME TYPE AS DUT

D G DUT

VDS 0

Ig(REF) 0 IG CURRENT SAMPLING RESISTOR

S VDS ID CURRENT SAMPLING RESISTOR

IG(REF) 0

FIGURE 19. GATE CHARGE TEST CIRCUIT

FIGURE 20. GATE CHARGE WAVEFORMS

2002 Fairchild Semiconductor Corporation

IRF540, RF1S540SM Rev. B

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