TAOS-TFTs to drive FPDS Features and Current Status

FPD International in china@ Beijing(Dec 10)

Frontier Research Center & Materials and Structures Laboratory (MSL) Tokyo Institute of Technology, Yokohama, JAPAN 1. 2. 3. 4. Large mobility(10-202/Vs) Easy fabrication by sputtering at LT Homogenous (no grain boudary) Optically transparent

Hideo HOSONO

Outline
History of Oxide TFT Unique Characteristics of TAOS How unique and why cf. a-Si:H Features of a-InGaZnOx-TFT mobility, controllability, stabilization, tail state , negative bias-light illumination(NBL) instability FPD application Future issues

Oxide TFTs and FPDs

1950 1960 1970 1980 1990 2000 2010
1948 W. Shockley 1951 1960 pn JFET Si MOSFET High Tc Oxide Electronics Amorphous TCO Oxide TFT revival

1975 a-Si:H 1979 a-Si:H TFT Commercialization 1983 5 B/W LCD 1985 10 Color LCD 1961 CdS TFT 1996 Epi-SnO2:Sb (eff ~1 cm2/Vs) ~1964 poly-SnO2 FET 2003 poly-ZnO TFT rush poly-In2O3 FET (gm=0.3mhos) 2005 LCD panel (Casio) 1968 ZnO FET 2006 AMOLED panel (ETRI) (gm=10mhos) 1995 TAOS 2004/11 TAOS TFT(TIT) 2005/12 Flexible B/W E-Paper(Toppan) (TIT) 2006/12 Color E-Paper AMOLED panel (LG) 2007/8 AMOLED panel (Samsung) Flexible OLED(LG) 2008/1 AMLCD panel (Samsung)

History of amorphous semiconductor and device application

1950. 1960. 1970. 1980. 1990. 2000

Photoconductivity in a-Se(Xerography) Glassy semicond.(V2O5 based oxide) Chalcogenide glass DVD) Switching and memory effect in a-chal. film a-Si:H Giant-Microelectronics

Flexible electronics ( novel a-sc)

Material design concept (electron pathway)

covalent semicon. ionic oxide semicon. M:(n-1)d10ns0 (n5)

crystal

amorphous

JNCS(1996),Nature(2004)

Designing TAOS with a large e-Hall mobility

A TAOS Material : In2O3-Ga2O3-ZnO (IGZO)

(Ne x1018cm-3)

Hall

5s0

4s0

4s0

Glass substrate @ RT

Structure

In-Zn-O (IZO) : > 30 cm2(Vs)-1) In-Ga-Zn-O (IGZO) : > 15 cm2(Vs)-1) J.Non-Cryst.Sol.(2006)

Electron Transport Properties of a-IGZO

EF>Emobility @ Ne>2x1018cm-3

Mobility increases with Ne cf.c-Si

TAOS is a first a-semiconductor in which Ef exceeds the mobility gap

APL(2004)

Carrier doping in a-Si:H

Street Model
(CBM)

(PRL 1982)

impossible

(VBM)

Arrowed
P Si

Forbidden
P+ Si-

EF cannot exceed the mobility gap by doping

Spear & LeComber, SSC(1975)

Carriers are NOT generated

Tail State Density from Device simulation

a-IGZO
Assumption: Constant mobility & two-step subgap DOSs

a-Si:H

1021

1018
(depletion)

(enhancement type)

1016

1016

Ec
Dit=0.91011 cm-2/eV a-IGZO/a-SiO2 (annealed): S=0.12 V/dec (Dit=2.5x1011 cm-2) a-Si:H/a-SiNx:H (typical) : S=0.4 V/dec

Ec
R.A. Street (Ed.), Technology and Applications of Amorphous Silicon, Springer-Verlag, Berlin, 2000

APL(2007)

a-IGZO TFT on Glass

Field Effect Mobility = 14 cm2(Vs)-1 Deposited by DC sputtering

Cf. a=Si:H =~1cm2(Vs)-1

Nature (2004), JJAP(2006), J.SID(2006)

a- Si:H TFT: tail state and TFT operation

1973 Success of reduction of tail states in a-Si Deposited by glow discharge method 1975 Success in PN control by substitutional doping
P.G.Le Comber, W.E.Spear, A.Ghaith

1979 Success in TFT operation

evaporated

sputtered

glow discharged

a-Si:H
J.Non-Cryst.Sol. Solid State Commun. Electron.Lett.

Controllability and Stability of Ne

Ne vs. PO2
I- V

In-Zn-Ga-O (IGZO)

Conduction Band Bottom in a-IGZO

combined EXAFS measurements with VASP simulation
Polyhedral view In5s-In5s connections LUMO

In 5s 3D-connected

In3+ form an extended conduction band bottom by percolation of In 5s orbitals.

Phys.Rev.B(2006)

Why a-IGZO for TFT-Channel layer ? lHigh electron mobility

In3+ as

electron pathway former

(4d)10(5s)0

lStable amorphous structure Zn2+ as amorphous structure stabilizer

tetrahedral coordination

lExcellent controllability of carrier density Ga3+ as carrier generation suppresser

high ionic field strength Z/r
stable stoichiometric compound excellent sputter target

TFT Performance: Annealing effects

a-In-GZO on SiO2 /Si High Quality Low Quality as-deposited as-deposited 300C annealed

Subgap DOS (ATLAS)

Defect model
Ec E 2 Ec E g (E ) = N ta exp W + N ga exp W ta ga

Subgap DOS Ec

Unannealed Dry annealed Wet annealed

exp : ~6.0 calc : ~6.5 NTA :~2.5 WTA : ~0.15

~9.5 ~9.0 ~2.8 ~0.115

~12 (cm2/Vs) ~11 (cm2/Vs) ~ 3.0(x1017 cm-3) ~ 0.065 (eV)

Wet annealing is effective to reduce subgap DOS. Total DOS:~1017 cm-3

Light Sensitivity

(a)

(b)

a-IGZOTFT1013cm -2s-1.20) Insensitive to >460nm

Cf. Bang gap ~390nm

SID08

Hard X-ray Photo Emission Spectroscopy: Bulk & S-electron Sensitive

Large photoelectron escape depth (5-10nm) High Ionization Cross section of s electron to p, d, f electrons

Beam line BL47XU@ Spring-8

Excitation : h = 7935.2 eV Detector : Gammadata Scienta Co., R4000-10KV Resolution : ~180 meV
K. Kobayashi et al., APL (2003).

Origin of photoresponse to subgap light

Angle dependent HX-PES spectra
Unannealed Wet-annealed

depth profile of Subgap DOS Film surface

(CBM)

VBM

Subgap defect (Peak energy ~2.7eV, width ~1.5eV)

d < 2nm: 1020 cm-3

Subgap state for a-IGZO

Exponential tail and deep states Tail state DOS (~ 1017 cm-3) Small S-Value (0.1V/dec.) Localized state (before annealing) Deep state DOS (~ 1016 cm-3) High density VB-DOS (> 1020 cm-3)

Difficulty of inversion operation

Low valence state

Asian Mater.(2010)

By Hard X-ray PE

Instability by L-NBS (Annealed TFTs with t=40nm)

NBS(dark) Illumination (no bias)
Ph ~1014 cm-2s-1

Illumined-NBS (E=2.7 eV, 460nm)

Ph ~1014 cm-2s-1

Vth ~0 V

Vth ~-1 V

Vth >10 V

Large Vth shift under subgap light illumination

Negative Vth shift by light illuminated NBS

Photo-induced hole trapping at channel / GI interface
Unpassivated: ~ 2.3 eV (Subgap density : ~2x1020 cm-3) Passivated: ~ 2.9 eV(Subgap density: ? ) Unannealed: < 2.0 eV (Subgap density : 7x1020 cm-3)

hole or H+

Ovacancy with 2e/ Low valence cation(In+,Ga+)

Positive charges at interface (Dit) for L-NBS (3hours ): Unpassivated : ~3.2 1012 cm-2eV-1 Passivated: ~3.71011 cm-2eV-1 (From TFT simulation)

Comparison TFT technology :TAOS and silicon

Generation Channel TFT Mask Steps Mobility (cm2/Vs) TFT uniformity Pixel TFT Pixel circuit (OLED) Cost / Yield TFT reliability Vth shift (@IDS=3A,30khr) Circuit integration Process T Display Mode Substrate a-Si:H TFT Poly-Si TFT Amorphous Oxide TFT 4G(LTPS)/8G(HTPS)? 8-10G 1G / 10G ELA LTPS/SPC HTPS a-Si:H a-InGaZnO4 4 5 masks 4 5 masks 5 9(11) masks 1 30 <1 50 100 (or larger) Good Poor Good NMOS PMOS, CMOS NMOS (CMOS?) Simple / Complex Complex Simple (2T+1C) (1T+1C / 4T+2C) (ex. 5T+2C) Low / High High / Low Low / High Good Good Poor < 0.5 V < 0.5V >30 V No 150 350oC LCD, OLED(?) Glass, metal, (plastic) Yes 250 550oC LCD, OLED (small size) Glass, metal, (plastic) Yes RT 400(600)oC LCD, OLED, E-paper Glass, metal, plastic

Upversioned from J.K. Jeong, Samsung SDI/Inha Univ, M.C. Sung, LG Electr. 2nd Oxide TFT Workshop (2007),IMID2009.

Prototype displays using a-IGZO-TFTs Front Drive Structure

Front Drive Structure

Color Filter Array

Transparent TFT Array

Display can be viewed through transparent TFT array.

M. Ito et.al., IEICE Trans. Electron, 90-C, 2105 (2007)

26 LCD (FPD International @ Yokohama 2009)

IGZO sputter target for G8

70, UHD (2kx4k), 3D-LCD panel

@FPD International at Makuhari (Nov.10)

Solution-processed TAOS-TFTs
Oxide TFTs can be fabricated by heating in ambient atmosphere cf. Si, organics How realize the dense amorphous thin films at LT ? The key is the precursor. Collaboration with organic chemists would be effective.

Bipolar TFT for C-MOS: SnO

Togo et al, PRB (2006)

O2p

Sn5s - O2p

P-channel TFT

SR

APL(2008)

TAOS-TFT:summary
9 Nchannel. Hole is not mobile (do not mind valence band offset for gate insulator 9 Fabricable near RT by conventional DC sputtering method on any type of substrates (plastics, soda-lime glass) 9 Field effect mobility>10cm2(Vs)-1 first amorphous semiconductors which can control Ef from 1/2Eg to above mobility gap Post annealing is very effective to improve performance) Performance retains for short -channel( to 20nm, Samsung) Long term stability under biasing & intense lighting was suppressed by appropriate passivation.
Hydrogen or H-containing plasma makes TAOS to conductors: Be careful ! Cf. H2O

Next Challenge Solution process, C-MOS .