4N25/ 4N26/ 4N27/ 4N28

Vishay Semiconductors

Optocoupler with Phototransistor Output

Description
The 4N25/ 4N26/ 4N27/ 4N28 consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual-inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.

Applications
Galvanically separated circuits for general purposes

95 10532

B 6

C 5

E 4

Features
D Isolation test voltage (RMS) 3.75 kV D Underwriters Laboratory (UL) 1577 recognized, file number E-76222 D Low coupling capacity of typical 1 pF D Current Transfer Ratio (CTR) of typical 100% D Low temperature coefficient of CTR
1 2 A (+) C () 3 n.c.
95 10805

Order Instruction
Ordering Code 4N25/ 4N26 4N27/ 4N28 CTR Ranking >20% >10% Remarks

Rev. A4, 11Jan99

1 (8)

4N25/ 4N26/ 4N27/ 4N28

Vishay Semiconductors Absolute Maximum Ratings
Input (Emitter)
Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions Symbol VR IF IFSM PV Tj Value 5 60 3 100 125 Unit V mA A mW C

tp 10 ms Tamb 25C

Output (Detector)
Parameter Collector base voltage Collector emitter voltage Emitter collector voltage Collector current Peak collector current Power dissipation Junction temperature Test Conditions Symbol VCBO VCEO VECO IC ICM PV Tj Value 70 30 7 50 100 150 125 Unit V V V mA mA mW C

tp/T = 0.5, tp 10 ms Tamb 25C

Coupler
Parameter Test Conditions Isolation test voltage (RMS) Total power dissipation Tamb 25C Ambient temperature range Storage temperature range Soldering temperature 2 mm from case, t 10 s 1) Related to standard climate 23/50 DIN 50014 Symbol VIO 1) Ptot Tamb Tstg Tsd Value 3.75 250 55 to +100 55 to +125 260 Unit kV mW C C C

2 (8)

Rev. A4, 11Jan99

4N25/ 4N26/ 4N27/ 4N28

Vishay Semiconductors Electrical Characteristics (Tamb = 25C)
Input (Emitter)
Parameter Forward voltage Junction capacitance Test Conditions IF = 50 mA VR = 0, f = 1 MHz Symbol VF Cj Min. Typ. 1.25 50 Max. 1.5 Unit V pF

Output (Detector)
Parameter Collector base voltage Collector emitter voltage Emitter collector voltage Collector dark current Collector dark current Test Conditions IC = 100 mA IE = 1 mA IE = 100 mA VCB = 10 V VCE = 10 V Symbol VCBO VCEO VECO ICBO ICEO Min. 70 30 7 Typ. Max. Unit V V V nA nA

0.1 3.5

20 50

Coupler
Parameter Isolation test voltage (RMS) Isolation resistance Collector emitter saturation voltage Cut-off frequency Test Conditions f = 50 Hz, t = 2 s VIO = 1 kV, 40% relative humidity IF = 50 mA, IC = 2 mA Symbol VIO1) RIO1) VCEsat fc Ck 110 1 Min. 3.75 Typ. Max. Unit kV W 0.5 V kHz pF

1012

VCE = 5 V, IF = 10 mA, RL = 100 W Coupling capacitance f = 1 MHz 1) Related to standard climate 23/50 DIN 50014

Current Transfer Ratio (CTR)

Parameter IC/IF Test Conditions Type VCE = 10 V, IF = 10 mA 4N25, 4N26 4N27, 4N28 Symbol CTR CTR Min. 0.2 0.1 Typ. 1 1 Max. Unit

Rev. A4, 11Jan99

3 (8)

4N25/ 4N26/ 4N27/ 4N28

Vishay Semiconductors Switching Characteristics
Parameter Turn-on time Turn-off time Turn-on time Turn-off time Test Conditions VCE = 10 V, IC = 10 mA, RL = 100 W (see figure 1) VCE = 5 V, IF = 10 mA, RL = 1 kW (see figure 2) Symbol ton toff ton toff Typ. 4.0 3.0 9.0 18.0 Unit ms ms ms ms

IF 0 RG = 50 W tp + 0.01 T tp = 50 ms

IF

+ 10 V IC = 10 mA ; Adjusted through input amplitude IF

96 11698

0 tp IC Oscilloscope RL 1 MW CL 20 pF 100% 90%

Channel I Channel II 50 W
95 10793

100 W

Figure 1. Test circuit, non-saturated operation

10% 0 tr td ton ts tf toff pulse duration delay time rise time turn-on time ts tf toff (= ts + tf)

IF 0 RG = 50 W tp + 0.01 T tp = 50 ms

IF = 10 mA

+5V IC tp td tr ton (= td + tr) storage time fall time turn-off time

Figure 3. Switching times

Channel I Channel II 50 W 1 kW

Oscilloscope RL 1 MW CL 20 pF

95 10844

Figure 2. Test circuit, saturated operation

4 (8)

Rev. A4, 11Jan99

4N25/ 4N26/ 4N27/ 4N28

Vishay Semiconductors Typical Characteristics (Tamb = 25_C, unless otherwise specified)
300 P tot Total Power Dissipation ( mW ) Coupled device ICEO Collector Dark Current, with open Base ( nA ) 250 200
Phototransistor

10000 VCE=10V IF=0 1000

150 IR-diode 100 50 0 0

100

10

1 40 80 120 Tamb Ambient Temperature ( C ) 0

96 11875

96 11700

10 20 30 40 50 60 70 80 90 100 Tamb Ambient Temperature ( C )

Figure 4. Total Power Dissipation vs. Ambient Temperature

1000.0 ICB Collector Base Current ( mA )

Figure 7. Collector Dark Current vs. Ambient Temperature

1.000 VCB=10V

I F Forward Current ( mA )

100.0

0.100

10.0

0.010

1.0

0.1
96 11862

0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF Forward Voltage ( V ) 1
96 11876

10 IF Forward Current ( mA )

100

Figure 5. Forward Current vs. Forward Voltage

CTR rel Relative Current Transfer Ratio 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 VCE=10V IF=10mA

Figure 8. Collector Base Current vs. Forward Current

100.00 VCE=10V IC Collector Current ( mA ) 10.00

1.00

0.10

0.5 30 20 10 0 10 20 30 40 50 60 70 80 96 11874 Tamb Ambient Temperature ( C )

0.01 0.1
96 11904

1.0 10.0 IF Forward Current ( mA )

100.0

Figure 6. Relative Current Transfer Ratio vs. Ambient Temperature

Figure 9. Collector Current vs. Forward Current

Rev. A4, 11Jan99

5 (8)

4N25/ 4N26/ 4N27/ 4N28

Vishay Semiconductors
1000 IF=50mA IC Collector Current ( mA ) 20mA CTR Current Transfer Ratio ( % ) VCE=20V

100.0

10.0

10mA 5mA

100

1.0

2mA 1mA

10

0.1 0.1
96 11905

1 1.0 10.0 100.0 VCE Collector Emitter Voltage ( V ) 0.1

95 10976

10

100

IF Forward Current ( mA )

Figure 10. Collector Current vs. Collector Emitter Voltage

V CEsat Collector Emitter Saturation Voltage ( V ) 1.0

Figure 13. Current Transfer Ratio vs. Forward Current

ton / t off Turn on / Turn off Time ( m s ) 50 Saturated Operation VS=5V RL=1kW

0.8 20% 0.6 CTR=50% 0.4 0.2 10% 0 1 10 IC Collector Current ( mA ) 100

40

30 toff 20 10 0 0 5 10 15 ton 20

95 10972

95 10974

IF Forward Current ( mA )

Figure 11. Collector Emitter Saturation Voltage vs. Collector Current

1000

Figure 14. Turn on / off Time vs. Forward Current

ton / t off Turn on / Turn off Time ( m s ) 20 Non Saturated Operation VS=10V RL=100W toff 10 ton 5

hFE DC Current Gain

800 VCE=10V 600 5V 400 200 0 0.01

15

0 0.1 1 10 100
95 10975

10

95 10973

IC Collector Current ( mA )

IC Collector Current ( mA )

Figure 12. DC Current Gain vs. Collector Current

Figure 15. Turn on / off Time vs. Collector Current

6 (8)

Rev. A4, 11Jan99

4N25/ 4N26/ 4N27/ 4N28

Vishay Semiconductors
Type

Date Code (YM)

XXXXXX 918 A TK 63 V 0884 D E

15090

Production Location Safety Logo

Coupling System Indicator

Company Logo

Figure 16. Marking example

Dimensions in mm

weight: creepage distance: air path:

0.50 g y 6 mm y 6 mm

after mounting on PC board

14770

Rev. A4, 11Jan99

7 (8)

4N25/ 4N26/ 4N27/ 4N28

Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

8 (8)

Rev. A4, 11Jan99