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FGL60N100BNTD

IGBT
FGL60N100BNTD
NPT-Trench IGBT

General Description Features


Trench insulated gate bipolar transistors (IGBTs) with NPT • High Speed Switching
technology show outstanding performance in conduction • Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A
and switching characteristics as well as enhanced • High Input Impedance
avalanche ruggedness. These devices are well suited for • Built-in Fast Recovery Diode
Induction Heating ( I-H ) applications

Application
Micro- Wave Oven, I-H Cooker, I-H Jar, Induction Heater, Home Appliance

TO-264
G C E
E

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol Description FGL60N100BNTD Units


VCES Collector-Emitter Voltage 1000 V
VGES Gate-Emitter Voltage ± 25 V
Collector Current @ TC = 25°C 60 A
IC
Collector Current @ TC = 100°C 42 A
ICM (1) Pulsed Collector Current 120 A
IF Diode Continuous Forward Current @ TC = 100°C 15 A
PD Maximum Power Dissipation @ TC = 25°C 180 W
Maximum Power Dissipation @ TC = 100°C 72 W
TJ Operating Junction Temperature -55 to +150 °C
Tstg Storage Temperature Range -55 to +150 °C
Maximum Lead Temp. for soldering
TL 300 °C
Purposes, 1/8” from case for 5 seconds

Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature

Thermal Characteristics
Symbol Parameter Typ. Max. Units
RθJC(IGBT) Thermal Resistance, Junction-to-Case -- 0.69 °C/W
RθJC(DIODE) Thermal Resistance, Junction-to-Case -- 2.08 °C/W
RθJA Thermal Resistance, Junction-to-Ambient -- 25 °C/W

©2004 Fairchild Semiconductor Corporation FGL60N100BNTD Rev. A


FGL60N100BNTD
Electrical Characteristics of IGBT TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics
BVCES Collector Emitter Breakdown Voltage VGE = 0V, IC = 1mA 1000 -- -- V
ICES Collector Cut-Off Current VCE = 1000V, VGE = 0V -- -- 1.0 mA
IGES G-E Leakage Current VGE = ± 25, VCE = 0V -- -- ± 500 nA

On Characteristics
VGE(th) G-E Threshold Voltage IC = 60mA, VCE = VGE 4.0 5.0 7.0 V
Collector to Emitter IC = 10A, VGE = 15V -- 1.5 1.8 V
VCE(sat)
Saturation Voltage IC = 60A, VGE = 15V -- 2.5 2.9 V

Dynamic Characteristics
Cies Input Capacitance -- 6000 -- pF
VCE=10V, VGE = 0V,
Coes Output Capacitance -- 260 -- pF
f = 1MHz
Cres Reverse Transfer Capacitance -- 200 -- pF

Switching Characteristics
td(on) Turn-On Delay Time -- 140 -- ns
VCC = 600 V, IC = 60A,
tr Rise Time -- 320 -- ns
RG = 51Ω, VGE=15V,
td(off) Turn-Off Delay Time -- 630 -- ns
Resistive Load, TC = 25°C
tf Fall Time -- 130 250 ns
Qg Total Gate Charge -- 275 350 nC
VCE = 600 V, IC = 60A,
Qge Gate-Emitter Charge -- 45 -- nC
VGE = 15V , , TC = 25°C
Qgc Gate-Collector Charge -- 95 -- nC

Electrical Characteristics of DIODE T C = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units


IF = 15A -- 1.2 1.7 V
VFM Diode Forward Voltage
IF = 60A -- 1.8 2.1 V
trr Diode Reverse Recovery Time IF = 60A di/dt = 20 A/us 1.2 1.5 us
IR Instantaneous Reverse Current VRRM = 1000V -- 0.05 2 uA

©2004 Fairchild Semiconductor Corporation FGL60N100BNTD Rev. A


FGL60N100BNTD
100 90
Common Emitter 20V Common Emitter
TC = 25℃ 15V 8V VGE = 15V
80
10V TC = 25℃ ━━
80 9V TC = 125℃ ------ TC = 25℃
70
Collector Current, I C [A]

Collector Current, I C [A]


60
60
TC = 125℃
50

40
40
30
7V
20 20

10
VGE = 6V
0 0
0 1 2 3 4 5 0 1 2 3 4
Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]

Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics

10
Common Emitter Common Emitter
O
VGE=15V T C= - 40 C
Collector-Emitter Voltage, VCE [V]

8
Collector-Emitter Voltage, VCE[V]
3
80A

60A 6

30A
2 4
30A 60A
80A

2
IC=10A
IC=10A
1 0
-50 0 50 100 150 4 8 12 16 20

Case Temperature, TC [℃] Gate-Emitter Voltage, V GE [V]

Fig 3. Saturation Voltage vs. Case Fig 4. Saturation Voltage vs. VGE
Temperature at Varient Current Level

10 10
Common Emitter Common Emitter
TC = 25℃ TC = 125℃

8 8
Collector-Emitter Voltage, VCE [V]

Collector-Emitter Voltage, VCE [V]

30A
6 6
60A
30A 80A

4 60A 4
80A

2 2

IC = 10A IC = 10A

0 0
4 8 12 16 20 4 8 12 16 20
Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V]

Fig 5. Saturation Voltage vs. VGE Fig 6. Saturation Voltage vs. VGE

©2004 Fairchild Semiconductor Corporation FGL60N100BNTD Rev. A


FGL60N100BNTD
10000 10000
Cies
V CC =600V, I C =60A
V G E =± 15V
o
T C =25 C
Capacitance [pF]

Tdoff
1000 1000

Switching Time [ns]


Tr

Tdon
Tf
Coes

100 100
Cres

Common Emitter
VGE = 0V, f = 1MHz
T C = 25℃
10
0 5 10 15 20 25 30 0 50 100 150 200
Collector-Emitter Voltage, VCE [V] G ate R esistance, R G [Ω ]

Fig 7. Capacitance Characteristics Fig 8. Switching Characteristics vs.


Gate Resistance

20
Common Emitter
1000 VCC=600V, RL=10 Ω
V CC= 6 0 0 V , R g = 5 1 Ω TC=25 ℃
V G E = ± 1 5 V , TC = 2 5 ℃
15
Gate-Emitter Voltage,VGE [V]

T d o ff
Switching Time [ns]

10
Tf
Tr

5
100
Tdon

0
10 20 30 40 50 60 0 50 100 150 200 250 300

C o lle c to r C u rre n t, I C [A ] Gate Charge, Qg [nC]

Fig 9. Switching Characteristics vs. Fig 10. Gate Charge Characteristics


Collector Current

10
IC MAX. (Pulsed)
100
IC MAX. (Continuous)
Thermal Response, ZTHJC [℃/W]

50us
1
Collector Current , I C [A]

100us 0.5

10 0.2
1ms 0.1 0.1
DC Operation
0.05
0.02
1 Single Nonrepetitive Pulse 0.01
TC = 25℃ 0.01
Curve must be darated
linearly with increase
in temperature single pulse
0.1 1E-3
-4 -3 -2 -1 0 1
1 10 100 1000 10 10 10 10 10 10

Collector-Emitter Voltage, VCE [V] Rectangular Pulse Duration [sec]

Fig 11. SOA Characteristics Fig 12. Transient Thermal Impedance of IGBT

©2004 Fairchild Semiconductor Corporation FGL60N100BNTD Rev. A


FGL60N100BNTD
100 1.2 120
IF=60A
TC=25℃
1.0 100

Reverse Recovery Time, trr [㎲ ]

Reverse Recovery Current Irr [A]


T C = 100 ℃
Forward Current, IF[A]

10 0.8 80
trr

T C = 25 ℃ 0.6 60

1 0.4 40

0.2 Irr 20

0.1 0.0 0
0.0 0.5 1.0 1.5 2.0 2.5 0 40 80 120 160 200 240
Forward Voltage, V FM [V] di/dt [A/㎲ ]

Fig 13. Forward Characteristics Fig 14. Reverse Recovery Characteristics


vs. di/dt

di/dt=-20A/㎲
1.2 TC=25℃ 12 1000
Reverse Recovery Current Irr [A]
Reverse Recovery Time, trr [㎲ ]

100
1.0 10 T C = 150 ℃
Reverse Current, IR [uA]

trr
10
0.8 8
Irr
1

0.6 6 0.1

T C= 25 ℃
0.01
0.4 4

1E-3
10 20 30 40 50 60 0 300 600 900
Forward Current, IF [A] Reverse Voltage, V R [V]

Fig 15. Reverse Recovery Characteristics vs. Fig 16. Reverse Current vs. Reverse Voltage
Forward Current

250
TC = 25 ℃

200
Capacitance, Cj [pF]

150

100

50

0
0.1 1 10 100
Reverse Voltage, VR [V]

Fig 17. Junction capacitance

©2004 Fairchild Semiconductor Corporation FGL60N100BNTD Rev. A


FGL60N100BNTD
Package Dimension

TO-264
20.00 ±0.20

6.00 ±0.20
(4.00)
(2.00)
(8.30) (8.30)
(1.00)
(9.00)
(9.00)

(0.50)
(11.00)

(R

ø3.3
2.0

20.00 ±0.20
0)

0 ±0

(R1
.20

.00
1.50 ±0.20

)
(2.00)

(7.00) (7.00)

4.90 ±0.20
2.50 ±0.10

(1.50)
(1.50) (1.50)
20.00 ±0.50

2.50 ±0.20 3.00 ±0.20

+0.25
1.00 –0.10

+0.25
5.45TYP 5.45TYP 0.60 –0.10 2.80 ±0.30
[5.45 ±0.30] [5.45 ±0.30]
5.00 ±0.20
3.50 ±0.20

(0.15)
(2.80)
(1.50)

Dimensions in Millimeters

©2004 Fairchild Semiconductor Corporation FGL60N100BNTD Rev. A


TRADEMARKS
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intended to be an exhaustive list of all such trademarks.
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

PRODUCT STATUS DEFINITIONS


Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and


supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product


that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

©2004 Fairchild Semiconductor Corporation Rev. I8

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