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IGBT
FGL60N100BNTD
NPT-Trench IGBT
Application
Micro- Wave Oven, I-H Cooker, I-H Jar, Induction Heater, Home Appliance
TO-264
G C E
E
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol Parameter Typ. Max. Units
RθJC(IGBT) Thermal Resistance, Junction-to-Case -- 0.69 °C/W
RθJC(DIODE) Thermal Resistance, Junction-to-Case -- 2.08 °C/W
RθJA Thermal Resistance, Junction-to-Ambient -- 25 °C/W
Off Characteristics
BVCES Collector Emitter Breakdown Voltage VGE = 0V, IC = 1mA 1000 -- -- V
ICES Collector Cut-Off Current VCE = 1000V, VGE = 0V -- -- 1.0 mA
IGES G-E Leakage Current VGE = ± 25, VCE = 0V -- -- ± 500 nA
On Characteristics
VGE(th) G-E Threshold Voltage IC = 60mA, VCE = VGE 4.0 5.0 7.0 V
Collector to Emitter IC = 10A, VGE = 15V -- 1.5 1.8 V
VCE(sat)
Saturation Voltage IC = 60A, VGE = 15V -- 2.5 2.9 V
Dynamic Characteristics
Cies Input Capacitance -- 6000 -- pF
VCE=10V, VGE = 0V,
Coes Output Capacitance -- 260 -- pF
f = 1MHz
Cres Reverse Transfer Capacitance -- 200 -- pF
Switching Characteristics
td(on) Turn-On Delay Time -- 140 -- ns
VCC = 600 V, IC = 60A,
tr Rise Time -- 320 -- ns
RG = 51Ω, VGE=15V,
td(off) Turn-Off Delay Time -- 630 -- ns
Resistive Load, TC = 25°C
tf Fall Time -- 130 250 ns
Qg Total Gate Charge -- 275 350 nC
VCE = 600 V, IC = 60A,
Qge Gate-Emitter Charge -- 45 -- nC
VGE = 15V , , TC = 25°C
Qgc Gate-Collector Charge -- 95 -- nC
40
40
30
7V
20 20
10
VGE = 6V
0 0
0 1 2 3 4 5 0 1 2 3 4
Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]
10
Common Emitter Common Emitter
O
VGE=15V T C= - 40 C
Collector-Emitter Voltage, VCE [V]
8
Collector-Emitter Voltage, VCE[V]
3
80A
60A 6
30A
2 4
30A 60A
80A
2
IC=10A
IC=10A
1 0
-50 0 50 100 150 4 8 12 16 20
Fig 3. Saturation Voltage vs. Case Fig 4. Saturation Voltage vs. VGE
Temperature at Varient Current Level
10 10
Common Emitter Common Emitter
TC = 25℃ TC = 125℃
8 8
Collector-Emitter Voltage, VCE [V]
30A
6 6
60A
30A 80A
4 60A 4
80A
2 2
IC = 10A IC = 10A
0 0
4 8 12 16 20 4 8 12 16 20
Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V]
Fig 5. Saturation Voltage vs. VGE Fig 6. Saturation Voltage vs. VGE
Tdoff
1000 1000
Tdon
Tf
Coes
100 100
Cres
Common Emitter
VGE = 0V, f = 1MHz
T C = 25℃
10
0 5 10 15 20 25 30 0 50 100 150 200
Collector-Emitter Voltage, VCE [V] G ate R esistance, R G [Ω ]
20
Common Emitter
1000 VCC=600V, RL=10 Ω
V CC= 6 0 0 V , R g = 5 1 Ω TC=25 ℃
V G E = ± 1 5 V , TC = 2 5 ℃
15
Gate-Emitter Voltage,VGE [V]
T d o ff
Switching Time [ns]
10
Tf
Tr
5
100
Tdon
0
10 20 30 40 50 60 0 50 100 150 200 250 300
10
IC MAX. (Pulsed)
100
IC MAX. (Continuous)
Thermal Response, ZTHJC [℃/W]
50us
1
Collector Current , I C [A]
100us 0.5
10 0.2
1ms 0.1 0.1
DC Operation
0.05
0.02
1 Single Nonrepetitive Pulse 0.01
TC = 25℃ 0.01
Curve must be darated
linearly with increase
in temperature single pulse
0.1 1E-3
-4 -3 -2 -1 0 1
1 10 100 1000 10 10 10 10 10 10
Fig 11. SOA Characteristics Fig 12. Transient Thermal Impedance of IGBT
10 0.8 80
trr
T C = 25 ℃ 0.6 60
1 0.4 40
0.2 Irr 20
0.1 0.0 0
0.0 0.5 1.0 1.5 2.0 2.5 0 40 80 120 160 200 240
Forward Voltage, V FM [V] di/dt [A/㎲ ]
di/dt=-20A/㎲
1.2 TC=25℃ 12 1000
Reverse Recovery Current Irr [A]
Reverse Recovery Time, trr [㎲ ]
100
1.0 10 T C = 150 ℃
Reverse Current, IR [uA]
trr
10
0.8 8
Irr
1
0.6 6 0.1
T C= 25 ℃
0.01
0.4 4
1E-3
10 20 30 40 50 60 0 300 600 900
Forward Current, IF [A] Reverse Voltage, V R [V]
Fig 15. Reverse Recovery Characteristics vs. Fig 16. Reverse Current vs. Reverse Voltage
Forward Current
250
TC = 25 ℃
200
Capacitance, Cj [pF]
150
100
50
0
0.1 1 10 100
Reverse Voltage, VR [V]
TO-264
20.00 ±0.20
6.00 ±0.20
(4.00)
(2.00)
(8.30) (8.30)
(1.00)
(9.00)
(9.00)
(0.50)
(11.00)
(R
ø3.3
2.0
20.00 ±0.20
0)
0 ±0
(R1
.20
.00
1.50 ±0.20
)
(2.00)
(7.00) (7.00)
4.90 ±0.20
2.50 ±0.10
(1.50)
(1.50) (1.50)
20.00 ±0.50
+0.25
1.00 –0.10
+0.25
5.45TYP 5.45TYP 0.60 –0.10 2.80 ±0.30
[5.45 ±0.30] [5.45 ±0.30]
5.00 ±0.20
3.50 ±0.20
(0.15)
(2.80)
(1.50)
Dimensions in Millimeters
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.