DISCUSSION QUESTIONS

1. Discuss the working principle of a PN junction diode. Also show its characteristics.

2. A silicon pn junction is doped with 1017 cm-3 donors on the n-side and 1017 cm-3 acceptors on the p-side. (a) Calculate the Fermi energies on the two sides at 300 K. Set the zero of energy to be at the top of the valence band. (b) Calculate the built-in voltage for this diode. If you did not find the Fermi energies in part (a), use EFn = 1 eV and EFp = 0.1 eV. (c) Draw the electric field as a function of position indicating the direction the field is pointing. For silicon: Eg = 1.12 eV, Nc = 2.781025 m-3 and Nv = 9.841024 m-3.

3. Draw the band diagram indicating the valence band, the conduction band, the Fermi energy, and the built-in potential, Vbi assuming that no voltage is applied across the junction. Indicate on this diagram approximately where the depletion region would be. (b) Draw the band diagram in forward and reverse bias. (c) The doping is Nd = 51015 1/cm and Na = 11017 1/cm. At 300 K, what is the concentration of holes on the p-side and the concentration of holes (minority carriers) on the n-side? For silicon, ni = 1.51010 1/cm.

4. How does a bipolar transistor work? b). What is the Early effect in a bipolar transistor?

5. The base of a pnp bipolar transistor is grounded. A battery is connected between the emitter and the base. Another battery is connected between the base and the collector. This is known as the common base configuration. (a) Draw the circuit indicating the polarities of the batteries that would put the transistor in the forward active mode. Explain why you have chosen these polarities.

(b) Why is the emitter more heavily doped than the collector? (c) How do the carriers that are emitted into the base reach the collector?

6. Describe a light emitting diode. Where do the electrons and holes recombine? Is the semiconductor direct or indirect? How should the diode be biased? What role does total internal reflection play?

7. Make a DC analysis for the circuit below;

8. Derive the hybrid parameters of a Common Emitter BJT b). Also derive the expressions for ; Voltage gain, Current gain, Input impedance, Output impedance.

9. How can an op-amp be used as; a) An integrator b) A Voltage follower

c) Differentiator d) Summing amplifier

10. What is the difference between low frequency and high frequency amplifiers? b). Describe the principle of operation of an oscillator c). Describe the principle of operation of any electronic device of your choice. Use a block diagram and also draw and explain the circuit corresponding to each block.

DISTRIBUTION OF QUESTIONS: GROUP A GROUP B GROUP C GROUP D GROUP E (QN 1, QN 6) (QN2, QN 7) (QN3, QN 8) (QN4, QN 9) (QN5, QN10)