Semiconductor Device Modeling With SPICE

Giuseppe Massobrio
Department of Electronics {DIBE) University of Genova Genova, Italy

Paolo Antognetti
Department of Electronics (DIBE) University of Genova Genova, Italy

Second Edition

McGraw-Hill, Inc.
New York San Francisco Washington, D.C. Auckland Bogota Caracas Lisbon London Madrid Mexico City Milan Montreal New Delhi San Juan Slngapore Sydney Tokyo Toronto

Contents

List of Physical Parameters Foreword by Robert W. Button, Stanford University Preface

ix xi xiii

Chapter 1 . P/V-Junction D i o d e a n d Schottky D i o d e 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 DC Current-Voltage Characteristics Static Model Large-Signal Model Small-Signal Model Schottky Diode and Its Implementation in SPICE2 Temperature and Area Effects on fhe Diode Model Parameters SPICE3 Models HSPICE Models PSPICE Models

1 1 11 19 23 26 28 31 31 40 42

References

Chapter 2. Bipolar Junction Transistor (BJT)

2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 2.10 2.11 2.12 Transistor Conventions and Symbols Ebers-Moll Static Model Ebers-Moll Large-Signal Model Ebers-Moll Small-Signal Model Gummel-Poon Static Model Gummel-Poon Large-Signal Model Gummel-Poon Small-Signal Model Temperature and Area Effects on the BJT Model Parameters Power BJT Model SPICE3 Models HSPICE Models PSPICE Models

45
46 48 62 70 74 96 101 105 109 118 118 128 129

References

vi

Contents

Chapter 3. Junction Field-Effect Transistor (JFET)

3.1 3.2 3.3 3.4 3.5 3.6 3.7 Static Model Large-Signal Model and Its Implementation in SPICE2 Small-Signal Model and Its Implementation in SPICE2 Temperature and Area Effects on the JFET Model Parameters SPICE3 Models HSPICE Models PSPICE Models

131
132 146 148 150 152 152 156 158

References

C h a p t e r 4. M e t a l - O x i d e - S e m i c o n d u c t o r Transistor ( M O S T ) 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 4.9 4.10 4.11 4.12 4.13 4.14 4.15 Structure and Operating Regions of the MOST LEVEL1 Static Model LEVEL2 Static Model LEVEL1 and LEVEL2 Large-Signal Model LEVEL3 Static Model LEVEL3 Large-Signal Model Comments on the Three Models The Effect of Series Resistances Small-Signal Models The Effect of Temperature on the MOST Model Parameters BSIM1 Model BSIM2 Model SPICE3 Models HSPICE Models PSPICE Models

161 161 168 180 195 202 210 211 212 213 215 216 234 240 242 246 247

References

Chapter 5. B J T P a r a m e t e r M e a s u r e m e n t s 5.1 5.2 Input and Model Parameters Parameter Measurements

251 251 253 265

References

Chapter 6. MOST Parameter Measurements

6.1 6.2 6.3 6.4 6.5 6.6 LEVEL1 Model Parameters LEVEL2 Model (Long-Channel) Parameters LEVEL2 Model (Short-Channel) Parameters LEVEL3 Model Parameters Measurements of Capacitance BSIM Model Parameter Extraction

267
267 273 279 289 295 298 298

References

Contents

vii

Chapter 7. Noise and Distortion 7.1

7.2

299 2M
309 324

Noise
Distortion

References

Chapter 8. T h e SPICE P r o g r a m 8.1 8.2 SPICE2 Capabilities SPICE2 Structure

325 325 333

8.3
8.4 8.5 8.6 8.7 8.8

Convergence Problems
SPICE2 Operation Linked-List Specification SPICE3 Capabilities Versus SPICE2 HSPICE Capabilities Versus SPICE2 PSPICE Capabilities Versus SPICE2

354
357 361 371 371 372 373

References

Chapter 9. M e t a l - S e m i c o n d u c t o r Field-Effect Transistor, Ion-Sensitive Field-Effect Transistor, a n d Semiconductor-Controlled Rectifier 9.1 9.2 9.3 MESFET ISFET THYRISTOR

375 376 390 400 408

References

Appendix A . PN Junction A.1 A.2 Elements of Semiconductor Physics Physical Operation of the PN Junction

411 411 421 444

References

Appendix B. M O S Junction B.1 MOS Junction

445 445 469

References

Appendix C. MS Junction
C.1 MS Junction

471
471 473

References

Index

475