Agilent 4N35 Phototransistor Optocoupler General Purpose Type

Data Sheet

Description The 4N35 is an optocoupler for general purpose applications. It contains a light emitting diode optically coupled to a phototransistor. It is packaged in a 6-pin DIP package and available in widelead spacing option and lead bend SMD option. Response time, tr , is typically 3 s and minimum CTR is 100% at input current of 10 mA.

Ordering Information Specify part number followed by Option Number (if desired). 4N35-XXXE Lead Free Option Number 000 = No Options 060 = IEC/EN/DIN EN 60747-5-2 Option W00 = 0.4" Lead Spacing Option 300 = Lead Bend SMD Option 500 = Tape and Reel Packaging Option

Features High Current Transfer Ratio (CTR: min. 100% at IF = 10 mA, VCE = 10 V) Response time (tr: typ., 3 s at VCE = 10 V, IC = 2 mA, RL = 100 ) Input-output isolation voltage (Viso = 3550 Vrms) Dual-in-line package UL approved CSA approved IEC/EN/DIN EN 60747-5-2 approved Options available: Leads with 0.4" (10.16 mm) spacing (W00) Leads bends for surface mounting (300) Tape and reel for SMD (500) IEC/EN/DIN EN 60747-5-2 approvals (060) Applications I/O interfaces for computers System appliances, measuring instruments Signal transmission between circuits of different potentials and impedances

Functional Diagram
PIN NO. AND INTERNAL CONNECTION DIAGRAM 6 5 4
ANODE 1 + IF 6 BASE

Schematic

VF CATHODE 2 IC 5 COLLECTOR

1 1. ANODE 2. CATHODE 3. NC

3 4. EMITTER 5. COLLECTOR 6. BASE

EMITTER

CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be induced by ESD.

Package Outline Drawings 4N35-000E

7.3 0.5 (0.287) 7.62 0.3 (0.3)

LEAD FREE

A 4N35
Y Y WW

6.5 0.5 (0.256) 2.8 0.5 (0.110) DATE CODE *1 2.54 0.25 (0.1)

3.5 0.5 (0.138) 0.5 TYP. (0.02) 3.3 0.5 (0.13) 0.26 (0.010) 7.62 ~ 9.98

ANODE

0.5 0.1 (0.02)

DIMENSIONS IN MILLIMETERS AND (INCHES)

4N35-060E

7.3 0.5 (0.287)

7.62 0.3 (0.3)

LEAD FREE

A 4N35 V
Y Y WW

6.5 0.5 (0.256) 2.8 0.5 (0.110)

3.5 0.5 (0.138) 0.5 TYP. (0.02) 3.3 0.5 (0.13) 0.26 (0.010) 7.62 ~ 9.98

ANODE

DATE CODE *1 2.54 0.25 (0.1)

0.5 0.1 (0.02)

DIMENSIONS IN MILLIMETERS AND (INCHES)

4N35-W00E
7.3 0.5 (0.287) 7.62 0.3 (0.3)

LEAD FREE

A 4N35
Y Y WW

6.5 0.5 (0.256) 2.8 0.5 (0.110)

3.5 0.5 (0.138) 6.9 0.5 (0.272) 2.3 0.5 (0.09) 0.5 0.1 (0.02) 0.26 (0.010) 10.16 0.5 (0.4)

ANODE

DATE CODE *1 DIMENSIONS IN MILLIMETERS AND (INCHES)

2.54 0.25 (0.1)

4N35-300E
7.3 0.5 (0.287) 7.62 0.3 (0.3)

LEAD FREE

A 4N35
Y Y WW

6.5 0.5 (0.256) 1.2 0.1 (0.047) DATE CODE *1

3.5 0.5 (0.138) 0.35 0.25 (0.014) 0.26 (0.010)

ANODE 2.54 0.25 (0.1)

1.0 0.25 (0.39) 10.16 0.3 (0.4)

DIMENSIONS IN MILLIMETERS AND (INCHES)

Temperature (C)

Solder Reflow Temperature Profile 1) One-time soldering reflow is recommended within the condition of temperature and time profile shown at right. 2) When using another soldering method such as infrared ray lamp, the temperature may rise partially in the mold of the device. Keep the temperature on the package of the device within the condition of (1) above.

30 seconds 250C 217C 200C 260C (Peak Temperature)

150C 60 sec

25C 60 ~ 150 sec 90 sec Time (sec) 60 sec

Absolute Maximum Ratings Storage Temperature, TS Operating Temperature, TA Lead Solder Temperature, max. (1.6 mm below seating plane) Average Forward Current, IF Reverse Input Voltage, VR Input Power Dissipation, PI Collector Current, IC Collector-Emitter Voltage, VCEO Emitter-Collector Voltage, VECO Collector-Base Voltage, VCBO Collector Power Dissipation Total Power Dissipation Isolation Voltage, V iso (AC for 1 minute, R.H. = 40 ~ 60%) 55C to +150C 55C to +100C 260C for 10 s 60 mA 6V 100 mW 100 mA 30 V 7V 70 V 300 mW 350 mW 3550 Vrms

Electrical Specifications (TA = 25C) Parameter Forward Voltage Reverse Current Terminal Capacitance Collector Dark Current Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Base Breakdown Voltage Collector Current *Current Transfer Ratio Collector-Emitter Saturation Voltage Response Time (Rise) Response Time (Fall) Isolation Resistance Floating Capacitance Symbol VF IR Ct ICEO BVCEO BVECO BVCBO IC CTR VCE(sat) tr tf Riso Cf Min. 30 7 70 10 100 5 x 1010 Typ. 1.2 50 3 3 1 x 1011 1 Max. 1.5 10 50 500 0.3 10 10 2.5 Units V A pF nA A V V V mA % V s s pF Test Conditions IF = 10 mA VR = 4 V V = 0, f = 1 KHz VCE = 10 V, IF = 0, TA = 25C VCE = 30 V, IF = 0, TA = 100C IC = 0.1 mA, IF = 0 IE = 10 A, IF = 0 IC = 0.1 mA, IF = 0 IF = 10 mA VCE = 10 V IF = 50 mA, IC = 2 mA VCC = 10 V, IC = 2 mA RL = 100 DC 500 V 40 ~ 60% R.H. V = 0, f = 1 MHz

* CTR =

IC x 100% IF

PC COLLECTOR POWER DISSIPATION mW

100
IF FORWARD CURRENT mA

400
IF FORWARD CURRENT mA

500 TA = 75C 200 100 50 20 10 5 2 1

-25 0 25 50 75 100 125

80

300

TA = 50C TA = 25C

TA = 0C TA = -25C

60

200

40

20 0 -55

100

-25

25

50

75

100 125

0 -55

0.5

1.0

1.5

2.0

2.5

3.0

TA AMBIENT TEMPERATURE C

TA AMBIENT TEMPERATURE C

VF FORWARD VOLTAGE V

Figure 1. Forward current vs. temperature.

Figure 2. Collector power dissipation vs. temperature.

Figure 3. Forward current vs. forward voltage.

180 160 140 120 100 80 60 40 20

IC COLLECTOR CURRENT mA

VCE = 10 V TA = 25C

30 TA = 25C IF = 15 mA IF = 10 mA

RELATIVE CURRENT TRANSFER RATIO %

CTR CURRENT TRANSFER RATIO %

PC (MAX.)

150

IF = 10 mA VCE = 10 V

20

100

RBE =

10

IF = 5 mA IF = 2 mA

50

0 0.1 0.2

500 k 0.5 1 2

100 k 5 10 20 50 100

10

15

0 -55

-25

25

50

75

100

IF FORWARD CURRENT mA

VCE COLLECTOR-EMITTER VOLTAGE V

TA AMBIENT TEMPERATURE C

Figure 4. Current transfer ratio vs. forward current.

Figure 5. Collector current vs. collectoremitter voltage.

Figure 6. Relative current transfer ratio vs. temperature.

ICEO COLLECTOR DARK CURRENT A

0.12
VCE(SAT.) COLLECTOR-EMITTER SATURATION VOLTAGE V

0.10 0.08 0.06 0.04 0.02 0 -55

IF = 50 mA IC = 2 mA

10-6
5

10

-7 5

VCE = 10 V
RESPONSE TIME s

200 100 50 20 10 5 2 1 0.5 0.2 0.1 0.05

10-8
5

VCE = 10 V IC = 2 mA TA = 25C

tf tr td

10-9
5

10-10
5

ts

10-11
5

10-12
5

-25

25

50

75

100

10-13 -55

-25

20

40

60

80

100 125

0.1 0.2 0.5 1 2

5 10 20

50

TA AMBIENT TEMPERATURE C

TA AMBIENT TEMPERATURE C

RL LOAD RESISTANCE k

Figure 7. Collector-emitter saturation voltage vs. temperature.

Figure 8. Collector dark current vs. temperature.

Figure 9. Response time vs. load resistance.

VCE(SAT.) COLLECTOR-EMITTER SATURATION VOLTAGE V

VOLTAGE GAIN AV dB

VCE = 5 V IC = 2 mA TA = 25C

7 TA = 25C 6 5 4 3 2 1 0 0 5 10 15 IC = 0.5 mA IC = 1 mA IC = 2 mA IC = 3 mA IC = 6 mA IC = 7 mA

-5

-10

RL = 10 k RL = 1 k RL = 100 2 5 10 20 50 100 200 500

-15

-20 0.5 1

f FREQUENCY kHz

IF FORWARD CURRENT mA

Figure 10. Frequency response.

Figure 11. Collector-emitter saturation voltage vs. forward current.

Test Circuit for Response Time

VCC

Test Circuit for Frequency Response

VCC

RD INPUT

RL OUTPUT

RD

RL OUTPUT

INPUT

OUTPUT

10%

90%

td tr

ts tf

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