STGP20NC60V STGW20NC60V

N-CHANNEL 30A - 600V - TO-220/TO-247 Very Fast PowerMESH IGBT

Table 1: General Features
TYPE STGP20NC60V STGW20NC60V
s s

Figure 1: Package
IC @100C 30 A 30 A

VCES 600 V 600 V

VCE(sat) (Max) @25C < 2.5 V < 2.5 V

s s

s s

OFF LOSSES INCLUDE TAIL CURRENT LOSSES INCLUDE DIODE RECOVERY ENERGY HIGH CURRENT CAPABILITY HIGH FREQUENCY OPERATION UP TO 50 KHz LOWER CRES / CIES RATIO NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRUBUTION

3 1 2
3 2 1

TO-220 TO-247 Weight for TO-220: 1.92gr 0.01 Weight for TO-247: 4.41gr 0.01 Max Clip Pressure: 150 N/mm2 Figure 2: Internal Schematic Diagram

DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH IGBTs, with outstanding performances. The suffix V identifies a family optimized for high frequency.

APPLICATIONS HIGH FREQUENCY INVERTERS s SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES s UPS s MOTOR DRIVERS
s

Table 2: Order Codes

SALES TYPE STGP20NC60V STGW20NC60V MARKING GP20NC60V GW20NC60V PACKAGE TO-220 TO-247 PACKAGING TUBE TUBE

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Table 3: Absolute Maximum ratings
Symbol VCES VECR VGE IC IC ICM (1) PTOT Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection Gate-Emitter Voltage Collector Current (continuous) at 25C (#) Collector Current (continuous) at 100C (#) Collector Current (pulsed) Total Dissipation at TC = 25C Derating Factor Storage Temperature Operating Junction Temperature Value 600 20 20 60 30 100 200 1.6 55 to 150 Symbol V V V A A A W W/C C

(1)Pulse width limited by max. junction temperature.

Table 4: Thermal Data

Min. Rthj-case Rthj-amb TL Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature for Soldering Purpose (1.6 mm from case, for 10 sec.) TO-220 TO-247 300 Typ. Max. 0.625 62.5 50 C C/W C/W

ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) Table 5: Off

Symbol VBR(CES) ICES Parameter Collectro-Emitter Breakdown Voltage Collector-Emitter Leakage Current (VCE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Conditions IC = 1 mA, VGE = 0 VGE = Max Rating Tc=25C Tc=125C VGE = 20 V , VCE = 0 Min. 600 Typ. Max. Unit V

10 1 100

A mA nA

IGES

Table 6: On
Symbol VGE(th) VCE(SAT) Parameter Gate Threshold Voltage Collector-Emitter Saturation Voltage Test Conditions VCE= VGE, IC= 250 A VGE= 15 V, IC= 20A, Tj= 25C VGE= 15 V, IC= 20A, Tj= 125C Min. 3.75 1.8 1.7 Typ. Max. 5.75 2.5 Unit V V V

(#) Calculated according to the iterative formula: T T JMAX C I ( T ) = ------------------------------------------------------------------------------------------------C C R V (T , I ) THJ C CESAT ( M AX ) C C

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ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Dynamic
Symbol gfs(1) Cies Coes Cres Qg Qge Qgc ICL Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-Off SOA Minimum Current Test Conditions VCE = 15 V, IC= 20 A VCE = 25V, f = 1 MHz, VGE = 0 Min. Typ. 15 2200 225 50 100 16 45 100 140 Max. Unit S pF pF pF nC nC nC A

VCE = 390 V, IC = 20 A, VGE = 15V, (see Figure 20) Vclamp = 480 V , Tj = 150C RG = 10 , VGE= 15V Test Conditions VCC = 390 V, IC = 20 A RG= 3.3, VGE= 15V, Tj= 25C (see Figure 18) VCC = 390 V, IC = 20 A RG= 3.3, VGE= 15V, Tj= 125C (see Figure 18)

Table 8: Switching On
Symbol td(on) tr (di/dt)on Eon (2) td(on) tr (di/dt)on Eon (2) Parameter Turn-on Delay Time Current Rise Time Turn-on Current Slope Turn-on Switching Losses Turn-on Delay Time Current Rise Time Turn-on Current Slope Turn-on Switching Losses Min. Typ. 31 11 1600 220 31 11.5 1500 450 Max. Unit ns ns A/s J ns ns A/s J

300

2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25C and 125C)

Table 9: Switching Off

Symbol tr(Voff) td(off) tf Eoff (3) Ets tr(Voff) td(off) tf Eoff (3) Ets Parameter Off Voltage Rise Time Turn-off Delay Time Current Fall Time Turn-off Switching Loss Total Switching Loss Off Voltage Rise Time Turn-off Delay Time Current Fall Time Turn-off Switching Loss Total Switching Loss Vcc = 390 V, IC = 20 A, RGE = 3.3 , VGE = 15 V Tj = 125 C (see Figure 18) Test Conditions Vcc = 390 V, IC = 20 A, RGE = 3.3 , VGE = 15 V TJ = 25 C (see Figure 18) Min. Typ. 28 100 75 330 550 66 150 130 770 1220 450 750 Max. Unit ns ns ns

J J
ns ns ns

J J

(3)Turn-off losses include also the tail of the collector current.

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Figure 3: Output Characteristics Figure 6: Transfer Characteristics

Figure 4: Transconductance

Figure 7: Collector-Emitter On Voltage vs Temperature

Figure 5: Collector-Emitter On Voltage vs Collector Current

Figure 8: Normalized Gate Threshold vs Temperature

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Figure 9: Normalized Breakdown Voltage vs Temperature Figure 12: Gate Charge vs Gate-Emitter Voltage

Figure 10: Capacitance Variations

Figure 13: Total Switching Losses vs Temperature

Figure 11: Total Switching Losses vs Gate Resistance

Figure 14: Total Switching Losses vs Collector Current

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Figure 15: Thermal Impedance Figure 17: Ic vs Frequency

Figure 16: Turn-Off SOA

For a fast IGBT suitable for high frequency applications, the typical collector current vs. maximum operating frequency curve is reported. That frequency is defined as follows: fMAX = (PD - PC) / (EON + EOFF) 1) The maximum power dissipation is limited by maximum junction to case thermal resistance: PD = T / RTHJ-C considering T = TJ - TC = 125 C- 75 C = 50C 2) The conduction losses are: PC = IC * VCE(SAT) * with 50% of duty cycle, VCESAT typical value @125C. 3) Power dissipation during ON & OFF commutations is due to the switching frequency: PSW = (EON + EOFF) * freq. 4) Typical values @ 125C for switching losses are used (test conditions: VCE = 390V, VGE = 15V, RG = 3.3 Ohm). Furthermore, diode recovery energy is included in the EON (see note 2), while the tail of the collector current is included in the EOFF measurements (see note 3).

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Figure 18: Test Circuit for Inductive Load Switching Figure 20: Gate Charge Test Circuit

Figure 19: Switching Waveforms

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TO-220 MECHANICAL DATA

mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154

DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 P Q

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TO-247 MECHANICAL DATA

mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620

DIM. A A1 b b1 b2 c D E e L L1 L2 P R S

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Table 10: Revision History
Date 07-June-2004 Revision 4 Description of Changes Stylesheet update. No content change

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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners 2004 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.

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