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TIP120, TIP121, TIP122 NPN

Version 2004-06-21

Darlington Transistors Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren NPN

Collector current Kollektorstrom Plastic case Kunststoffgehuse Weight approx. Gewicht ca. Plastic material has UL classification 94V-0 Gehusematerial UL94V-0 klassifiziert
1 = B1 2 = C2 3 = E2

5A TO-220AB 2.2 g

Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle

Maximum ratings (TA = 25C) TIP120 Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage B open E open C open VCE0 VCB0 VEB0 Ptot Ptot IC ICM IB Tj TS 60 V 60 V

Grenzwerte (TA = 25C) TIP121 80 V 80 V 50 V 2 W 1) 65 W 5A 8A 120 mA - 65+ 150C - 65+ 150C TIP122 100 V 100 V

Power dissipation Verlustleistung without cooling ohne Khlung with cooling mit Khlung TC = 25C Collector current Kollektorstrom (dc) Peak Collector current Kollektor-Spitzenstrom Base current Basisstrom (dc) Junction temperature Sperrschichttemperatur Storage temperature Lagerungstemperatur

Characteristics (Tj = 25C) Min. Collector-Emitter cutoff current Kollektorreststrom IB = 0, VCE = 30 V IB = 0, VCE = 40 V IB = 0, VCE = 50 V IE = 0, VCB = 60 V IE = 0, VCB = 80 V IE = 0, VCB = 100 V
1

Kennwerte (Tj = 25C) Typ. Max. 500 nA 500 nA 500 nA 200 nA 200 nA 200 nA

TIP120 TIP121 TIP123 TIP120 TIP121 TIP122

ICE0 ICE0 ICE0 ICB0 ICB0 ICB0

Collector-Base cutoff current Kollektorreststrom

) Valid, if leads are kept at ambient temperature at a distance of 5 mm from case Gltig, wenn die Anschludrhte in 5 mm Abstand von Gehuse auf Umgebungstemperatur gehalten werden

Darlington Transistors

TIP120, TIP121, TIP122

Characteristics (Tj = 25C) Min. Emitter-Base cutoff current Emitterreststrom IC = 0, VEB = 5 V IC = 3 A, IB = 12 mA IC = 5 A, IB = 20 mA IC = 3 A, VCE = 3 V VCE = 3 V, IC = 0.5 A VCE = 3 V, IC = 3 A VCE = 4 V, IC = 3 A, f = 1 MHz VCB = 10 V, IE = ie = 0, f = 100 kHz Thermal resistance Wrmewiderstand junction to ambient air Sperrschicht zu umgebender Luft junction to case Sperrschicht zu Gehuse Admissible torque for mounting Zulssiges Anzugsdrehmoment Recommended complementary PNP transistors Empfohlene komplementre PNP-Transistoren Equivalent Circuit Ersatzschaltbild IEB0 VCEsat VCEsat VBEon hFE hFE hfe CCB0 1000 1000 4

Kennwerte (Tj = 25C) Typ. RthA RthC M4 Max. 2 mA 2V 4V 2.5 V 200 pF 62.5 K/W 2) 2 K/W 9 10% lb.in. 1 10% Nm

Collector saturation voltage Kollektor-Sttigungsspg. 1)

Base-Emitter on-voltage Basis-Emitter-Spannung 1) DC current gain Kollektor-Basis-Stromverhltnis 1)

Small signal current gain Kleinsignal-Stromverstrkung Collector-Base Capacitance Kollektor-Basis-Kapazitt

TIP125, TIP126, TIP127

C2
T2

B1

T1

E2

1 2

) Tested with pulses tp = 300 s, duty cycle 2% Gemessen mit Impulsen tp = 300 s, Schaltverhltnis 2% ) Valid, if leads are kept at ambient temperature at a distance of 5 mm from case Gltig, wenn die Anschludrhte in 5 mm Abstand von Gehuse auf Umgebungstemperatur gehalten werden

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