Ordering number:ENN5290A

NPN Triple Diffused Planar Silicon Transistor

2SC5296
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
High speed : tf=100ns typ. High breakdown voltage : VCBO=1500V. High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode.

Package Dimensions
unit:mm 2039D
[2SC5296]
3.4 16.0 5.0 8.0 5.6 3.1

21.0

22.0

4.0

2.8 2.0 20.4 1.0

2.0

0.6

3 3.5

Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC
Tc=25C

5.45

5.45

1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PML

Conditions

Ratings 1500 800 6 8 16 3.0 60 150 55 to +150

2.0

Unit V V V A A W W
C C

Tj Tstg

Electrical Characteristics at Ta = 25C

Parameter Collector Cutoff Current Collector-to-Emitter Sustain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol ICBO ICES VCB=800V, IE=0 VCE=1500V, RBE=0 800 40 130 5 1.5 Conditions Ratings min typ max 10 1.0 Unit A mA V mA V V

VCEO(sus) IC=100mA, IB=0 IEBO VEB=4V, IC=0 VCE(sat) VBE(sat) IC=5A, IB=1.25A IC=5A, IB=1.25A

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircrafts control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1899TS (KT)/11696YK (KOTO) TA-0585 No.52901/4

2SC5296
Continued from preceding page.
Parameter DC Current Gain Storage Time Fall Time Symbol hFE1 hFE2 tstg tf VCE=5V, IC=1A VCE=5V, IC=5A IC=4A, IB1=0.8A, IB2=1.6A IC=4A, IB1=0.8A, IB2=1.6A 0.1 Conditions Ratings min 15 4 typ max 25 7 3.0 0.2 s s Unit

Switching Time Test Circuit

No.52902/4