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DATA SHEET
Philips Semiconductors
Product specication
TEA5757; TEA5759
High selectivity with distributed IF gain Soft mute Signal dependent stereo-blend High impedance MOSFET input on AM Wide supply voltage range of 2.5 to 12 V Low current consumption 18 mA at AM and FM (including tuning synthesizer) High input sensitivity Low output distortion Due to the new tuning concept, the tuning is independent of the channel spacing. GENERAL DESCRIPTION The TEA5757; TEA5759 is a 44-pin integrated AM/FM stereo radio circuit including a novel tuning concept. The radio part is based on the TEA5712. The TEA5757 is used in FM-standards in which the local oscillator frequency is above the radio frequency (e.g. European and American standards). The TEA5759 is the version in which the oscillator frequency is below the radio frequency (e.g. Japanese standard). The new tuning concept combines the advantages of hand tuning with electronic facilities and features. User intelligence is incorporated into the tuning algorithm and an improvement of the analog signal processing is used for the AFC function.
VERSION SOT307-2
plastic quad at package; 44 leads (lead length 1.3 mm); body 10 10 1.75 mm
1999 Aug 26
Philips Semiconductors
Product specication
TEA5757; TEA5759
MAX.
UNIT V V V mA mA mA mA A C mV V %
AM performance; note 1 AF output voltage RF sensitivity input voltage total harmonic distortion 70 70 2.0
FM performance; note 2 V10 Vi5 THD AF output voltage RF limiting sensitivity total harmonic distortion 48 1.2 0.3 57 3.8 0.8 mV V % V10 at 3 dB; 0.4 V10 is 0 dB at Vi5 = 1 mV IF lter SFE10.7MS3A20K-A
MPX performance; note 3 cs Notes 1. VCC1 = 3 V; VCC2 = 12 V; VDDD = 3 V; fi = 1 MHz; m = 0.3; fm = 1 kHz; measured in Fig.9 with S1 in position A and S2 in position B; Vn refers to pin voltages; Vi(n) refers to test circuit (see Fig.9). 2. VCC1 = 3 V; VCC2 = 12 V; VDDD = 3 V; fi = 100 MHz; fm = 22.5 kHz; fm = 1 kHz; measured in Fig.9 with S2, S3 and S5 in position A; Vn refers to pin voltages; Vi(n) refers to test circuit (see Fig.9). 3. VCC1 = 3 V; VCC2 = 12 V; VDDD = 3 V; Vi3(L + R) = 155 mV; Vpilot = 15.5 mV; fi = 1 kHz; measured in Fig.9 with S2 and S3 in position B. channel separation 26 30 dB
1999 Aug 26
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FM-RFO FMOSC FM-IFI1 FM-MIXER FM-IFI2 FM-IFO1 IFGND FMDEM FSI 3 FM-RFI RFGND DATA BUS-CLOCK WRITE-ENABLE VSTAB(A) VSTAB(B) VCC1 VDDD RIPPLE 43 42 28 27 29 38 34 7 23 1 STATUS REGISTER STABILIZER SHIFT REGISTER DECODER up down level IN-LOCK DETECTOR stereo 14 MATRIX 15 AFRO stereo MULTIPLEXER PROGRAMMABLE COUNTER FM hard mute XTAL DGND P1 P0 25 26 31 30 CRYSTAL OSCILLATOR WINDOW DETECTOR AM AFC level SEQUENTIAL CIRCUIT CHARGE PUMP SDS MUTE mono 13 MUTE AFLO AM/FM INDICATOR FM FRONT-END FM OSCILLATOR FM MIXER FM IF1 FM IF2 FM DETECTOR PILOT DETECTOR 19 kHz 12 PLL 38 kHz 9 LFI VCO 5 39 37 35 33 17 18 21 16 24 PILFIL MO/ST PRESCALER LAST-STATION MEMORY
handbook, full pagewidth
BLOCK DIAGRAM
Philips Semiconductors
4
AM-RFI 2 AM FRONT-END AM OSCILLATOR AM MIXER AM IF AGC AM DETECTOR 6 40 41 36 44 8 22 10 AMOSC AM-IFI/O2 AM-MIXER AM-IFI1 AGC TUNE AFO VCC2
TEA5757; TEA5759
19 20 32 V/I CONVERTER AFC(n) AFC(p) AFC
TEA5757; TEA5759
11
MHA111
Product specication
MPXI
RFGND
Philips Semiconductors
Product specication
TEA5757; TEA5759
DESCRIPTION
parallel tuned FM-oscillator circuit to ground parallel tuned AM-oscillator circuit to ground supply voltage tuning current output voltage controlled oscillator input AM/FM AF output (output impedance typical 5 k) stereo decoder input (input impedance typical 150 k) loop-lter input mute input left channel output (output impedance typical 4.3 k) right channel output (output impedance typical 4.3 k) pilot detector lter input ground of IF, detector and MPX stage ceramic discriminator input AFC negative output AFC positive output eld-strength indicator supply voltage for tuning digital supply voltage mono/stereo and tuning indication output crystal input digital ground bus-clock input bus data input/output bus write-enable input programmable output port (P0) programmable output port (P1) 450 kHz LC-circuit FMIF input 2 (input impedance typical 330 ) internal stabilized supply voltage (B) FMIF output 1 (output impedance typical 330 ) input/output to IF-Tank (IFT); output: current source FMIF input 1 (input impedance typical 330 ) internal stabilized supply voltage (A) ceramic lter output (output impedance typical 330 ) open-collector output to IFT 5
Philips Semiconductors
Product specication
TEA5757; TEA5759
DESCRIPTION IFT or ceramic lter input (input impedance typical 3 k) FMRF aerial input (input impedance typical 40 ) AGC capacitor input
40 AM-MIXER
39 FM-MIXER
36 AM-IFI/O2
38 VSTAB(A)
1 2 3 4 5 6 7 8 9
34 VSTAB(B) 33 FM-IFI2 32 AFC 31 P1 30 P0 29 WRITE-ENABLE 28 DATA 27 BUS-CLOCK 26 DGND 25 XTAL 24 MO/ST 23 VDDD VCC2 22
MHA112
TEA5757H TEA5759H
AFO 10 MPXI 11 LFI 12 MUTE 13 AFLO 14 AFRO 15 PILFIL 16 IFGND 17 FMDEM 18 AFC(n) 19 AFC(p) 20 FSI 21
1999 Aug 26
35 FM-IFO1
41 AM-IFI1
42 RFGND
37 FM-IFI1
43 FM-RFI
44 AGC
Philips Semiconductors
Product specication
TEA5757; TEA5759
2. The Automatic Frequency Control (AFC) is switched off. 3. The counter starts counting the frequency and the tuning voltage is varied until the desired frequency roughly equals the real frequency. 4. The AFC is then switched on and the counter is switched off. 5. The real frequency is more precisely tuned to the desired frequency. After the AFC has tuned the real frequency to the desired frequency an in-lock signal can be generated. In order to get a reliable in-lock signal, there are two parameters measured: the field strength and the S-curve. The field strength indicates the strength of the station and by looking at the S-curve the system can distinguish false in-locks from real in-locks (false in-locks occur on the wrong slope of the S-curve). In the event of fading or pulling the in-lock signal becomes logic 0 and the synthesizer will be switched on again and the algorithm will be repeated. SEARCH OPERATION During a search operation, the only action the microcontroller has to take is: sending the desired band plus the direction and the search sensitivity level to the STR. The search operation is performed by the charge pump until an in-lock signal is generated (combination of measuring the field strength and the S-curve). The AFC then fine tunes to the station. The frequency belonging to the found station will be counted by the counter and written into the last-station memory and the shift register of the counter. At this time the frequency is available in the shift register and can be read by the microcontroller. The microcontroller decides whether the frequency is within the desired frequency band. If so, this frequency can be stored under a preset and if not, a new search action should be started. To ensure that the search function operates correctly under all conditions the following search sequence must be applied: Store the current frequency in the memory Issue the search command Wait for data valid and read the new frequency If the new frequency is the same as the stored frequency, issue a pre-set step (e.g. 50 kHz) and start the search sequence again.
1999 Aug 26
Philips Semiconductors
Product specication
TEA5757; TEA5759
Bus-clock functions MO/ST (PIN 24) LOW HIGH LOW HIGH RESULT stereo mono tuned not tuned
The TEA5757; TEA5759 has a 25-bit shift register; see Table 3 for an explanation of the shift register bits. If in search mode no transmitter can be found, all frequency bits of the shift register are set to logic 0. The bus protocol is depicted in Figs 3 and 4.
These three signals, together with the mono/stereo pin (MO/ST; pin 24), communicate with the microcontroller. The mono/stereo indicator has two functions, which are controlled by the BUS-CLOCK, as shown in Table 2. Table 3 Explanation of the shift register bits BIT S.24 (MSB) D.23 M.22 B0.21 B1.20 P0.19 P1.18 S0.17 S1.16 15 F.14 to F.0 (LSB) Note dummy frequency search-level of station port note 1 DESCRIPTION search start/end search up/down mono/stereo band 0 1 0 1 0 1 LOGIC STATE
RESULT after a search when a station is found or after a preset during the search action indicates if the radio has to search down indicates if the radio has to search up stereo is allowed mono is required (radio switched to forced mono)
see Table 4 selects FM/MW/LW/SW band user programmable bits which e.g. can be used as band switch driver
see Table 5 determines the locking eld strength during an automatic search, automatic store or manual search buffer determine the tuning frequency of the radio; see Table 6 for the bit values
1. The output pins 30 and 31 can drive currents up to 5 mA; bits P0.19 and P1.18 control the output voltage of the control pins P0 (pin 30) and P1 (pin 31): a) Bit P0.19 LOW sets P0 (pin 30) to LOW. b) Bit P0.19 HIGH sets P0 (pin 30) to HIGH. c) Bit P1.18 LOW sets P1 (pin 31) to LOW. d) Bit P1.18 HIGH sets P1 (pin 31) to HIGH.
1999 Aug 26
Philips Semiconductors
Product specication
TEA5757; TEA5759
Values for bits F.14 to F.0 BIT VALUE 214 213 212 211 210 29 28 27 26 25 24 23 22 21 20 FM VALUE(1) (kHz) 102400 51200 25600 12800 6400 3200 1600 800 400 200 100 50 25 12.5 AM VALUE(2) (kHz) 16384 8192 4096 2048 1024 512 256 128 64 32 16 8 4 2 1
B0.21 0 0 1 1
1. FM value of the affected oscillators: a) FM VALUE = FMRF + FMIF (for TEA5757). b) FM VALUE = FMRF FMIF (for TEA5759). 2. AM value of the affected oscillators: AM VALUE = AMRF + AMIF.
1999 Aug 26
Philips Semiconductors
Product specication
TEA5757; TEA5759
While WRITE-ENABLE is HIGH the microcontroller can transmit data to the TEA5757; TEA5759 (hard mute is active). At a rising edge of the BUS-CLOCK, the register shifts and accepts one bit into LSB. At clock LOW the microcontroller writes data (see Fig.4). To write the entire shift register 25 clock pulses are necessary.
WRITE-ENABLE
data read
BUS-CLOCK
DATA data available data available after search ready MSB is LOW data shift
MBE817
WRITE-ENABLE
BUS-CLOCK
DATA
MBE818
data shift
data change
1999 Aug 26
10
Philips Semiconductors
Product specication
TEA5757; TEA5759
WRITE-ENABLE
DATA
MBE819
t da
Table 7
SYMBOL Digital inputs VIH VIL Timing fclk tHIGH tLOW tda
V V
clock input frequency clock HIGH time clock LOW time shift register available after search ready
300 14
kHz s s s
1999 Aug 26
11
Philips Semiconductors
Product specication
TEA5757; TEA5759
MIN. 0 65 15 15
UNIT mW C C C V
1. Charge device model; equivalent to discharging a 200 pF capacitor via a 0 series resistor. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER thermal resistance from junction to ambient CONDITIONS in free air VALUE 65 UNIT K/W
1999 Aug 26
12
Philips Semiconductors
Product specication
TEA5757; TEA5759
TYP. 12 12 12
MAX. V V V A
UNIT
fBUS-CLOCK(max) maximum BUS-CLOCK frequency ICC1 IDD ICC1 IDD tsearch tacq current consumption during acquisition of VCC1 current consumption during acquisition of IDD current consumption after acquisition of VCC1 current consumption after acquisition of IDD AM mode FM mode AM mode FM mode AM mode FM mode AM mode FM mode
synthesizer auto-search time for FM mode empty band synthesizer preset acquisition time between two band limits FM MW LW SW
frequency band range of the synthesizer AFC inaccuracy of FM AFC inaccuracy of AM sink current of software programmable output P0 sink current of software programmable output P1 source current of software programmable output P0 source current of software programmable output P1
AM mode FM mode
1999 Aug 26
13
Philips Semiconductors
Product specication
TEA5757; TEA5759
AM CHARACTERISTICS Input frequency fi = 1 MHz; m = 0.3; fm = 1 kHz; measured in test circuit at pin 10 (see Fig.9); S2 in position B; Vi1 measured at input of matching network at pin 2; matching network adjusted to maximum output voltage at low input level; Vn refers to pin voltages; Vi(n) refers to test circuit (see Fig.9); unless otherwise specied. SYMBOL V10 Vi1 Vi1 PSRR PARAMETER AF output voltage RF sensitivity input voltage V 10 power supply ripple rejection ---------- V 7 input current (pin 2) input capacitance (pin 2) front-end conversion gain signal plus noise-to-noise ratio total harmonic distortion IF suppression Vi1 = 1 mV V10 = 30 mV CONDITIONS Vi1 = 5 mV (S+N)/N = 26 dB V7 = 100 mV (RMS); 100 Hz; V7 = 3.0 V V44 = 0.2 V V44 = 0.2 V V44 = 0.2 V V44 = 0.9 V (S+N)/N THD 450 MIN. 36 40 150 5 26 TYP. 45 55 300 47 MAX. 70 70 4 14 0 2.0 UNIT mV V mV dB
Ii Ci Gc
0 10 14 50 0.8 56
A pF dB dB dB % dB
FM CHARACTERISTICS Input frequency fi = 100 MHz; f = 22.5 kHz; fm = 1 kHz; measured in test circuit (see Fig.9) at pin 10; S2 in position B; Vn refers to pin voltages; Vi(n) refers to test circuit (see Fig.9); unless otherwise specied. SYMBOL V10 Vi5 Vi5 Vi5 PSRR PARAMETER AF output voltage RF sensitivity input voltage RF limiting sensitivity CONDITIONS Vi5 = 1 mV (S+N)/N = 26 dB V10 at 3 dB; V10 is 0 dB at Vi5 = 1 mV V7 = 100 mV (RMS); 100 Hz; V7 = 3.0 V MIN. 40 1 0.4 44 TYP. 48 2 1.2 500 MAX. 57 3.8 3.8 UNIT mV V V mV dB
large signal voltage handling capacity THD < 5% V 10 power supply ripple rejection ---------- V 7 V 37 front-end conversion gain -------- V i5 signal plus noise-to-noise ratio total harmonic distortion Vi5 = 1 mV IF lter SFE10.7MS3A20K-A
Gc
12
18
22
dB
(S+N)/N THD
62 0.3
0.8
dB %
1999 Aug 26
14
Philips Semiconductors
Product specication
TEA5757; TEA5759
STEREO DECODER CHARACTERISTICS Vi3(L + R) = 155 mV; Vpilot = 15.5 mV; f = 1 kHz; apply unmodulated RF signal of 100 mV to front-end to set radio to maximum channel separation; soft mute off (S4 in position A); unless otherwise specied. SYMBOL V14/15 Vpilot(s) Vpilot(m) VAF-L/Vi3 (S+N)/N THD cs 19 38 mute(s) stereo-blend soft mute depth PARAMETER AF output voltage switch to stereo switch to mono MPX voltage gain signal plus noise-to-noise ratio total harmonic distortion channel separation carrier and harmonic suppression 19 kHz (200 mV) = 0 dB 38 kHz Vi5 = 200 V Vi5 = 20 V Vi5 = 3 V; V14 = V15 Vi5 = 1 V; V14 = V15 TUNING CHARACTERISTICS SYMBOL VFM PARAMETER FM voltage levels high (auto-store/search) medium (auto-store/search) low (auto-store/search) nominal (preset mode/tuning indication) VAM AM voltage levels high (auto-store/search) medium (auto-store/search) low (auto-store/search) nominal (preset mode/tuning indication) VAFC(off) AFC voltage off mode CONDITIONS 3 dB-point at Vi5 = 2 V S0 = 1; S1 = 1 S0 = 0; S1 = 1 S0 = 1; S1 = 0 S0 = 0; S1 = 0 3 dB-point at Vi5 = 2 V S0 = 1; S1 = 1 S0 = 0; S1 = 1 S0 = 1; S1 = 0 S0 = 0; S1 = 0 3 dB-point at Vi5 = 2 V FM mode AM mode mute(h) hard mute depth 3 25 60 V V dB 400 50 32 25 1000 63 40 28 2500 80 50 40 V V V V 60 10 4 3 150 30 10 5 500 55 20 9 V V V V MIN. TYP. MAX. UNIT Vpilot = 15.5 mV (stereo) CONDITIONS MIN. 2 1.5 26 27 16 22 1 TYP. 160 8 5 74 0.5 30 32 21 30 1 0 6 MAX. 12 +1.5 1.0 2 10 UNIT mV mV mV dB dB % dB dB dB dB dB dB dB
WRITE-ENABLE = HIGH
1999 Aug 26
15
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Philips Semiconductors
20 10 0
20
40
60
80
100
(dBV)
(dB)
(1)
10 20 30 40
(2)
16
50 60 70 80 107
(3)
2 1 0 Vi1 (V) 1
MBE853
106
105
104
103
102
101
TEA5757; TEA5759
Product specication
Fig.6 AM mode.
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Philips Semiconductors
20 10 0
20
40
60
80
100
(dBV)
(dB)
(1) (3)
10 20 30 40
(4)
5 4
(5)
17
(1) (2) (3) (4) (5) (6)
50 60 70 80 107
3
(2) (6)
2 1 0 Vi5 (V) 1
MHA115
106
105
104
103
102
101
TEA5757; TEA5759
Mono signal. Noise in mono mode. Left channel with modulation left. Right channel with modulation left. Noise in stereo mode. Harmonic distortion (measured with f = 75 kHz).
Product specication
Fig.7 FM mode.
Philips Semiconductors
Product specication
TEA5757; TEA5759
EQUIVALENT CIRCUIT
1 k 1
3 k
70 pF
17
MBE821
AM-RFI
2
MBE822
FM-RFO
220 43 42 3
MHA105
4 5
RFGND FMOSC
0 0
0 0
MBE823
1999 Aug 26
18
Philips Semiconductors
Product specication
TEA5757; TEA5759
PIN NO. 6
DC VOLTAGE (V) AM 0 FM
EQUIVALENT CIRCUIT
MBE824
7 8
VCC1 TUNE
3.0
3.0
22
26
MBE825
VCO
1.3
0.95
1 k
9 10 k 17
MBE826
10
AFO
0.6
0.7
10
5 k 17
MBE827
1999 Aug 26
19
Philips Semiconductors
Product specication
TEA5757; TEA5759
PIN NO. 11
EQUIVALENT CIRCUIT
150 k 11 9.5 k
150 k
17
MBE828
12
LFI
0.1
0.8
4 k
12
13 k
17
MBE829
13
MUTE
0.7
0.7
7 k 13
50 k
17
MBE830
14
AFLO
0.65
0.65
14 5 k
17
MBE831
1999 Aug 26
20
Philips Semiconductors
Product specication
TEA5757; TEA5759
PIN NO. 15
EQUIVALENT CIRCUIT
15 5 k
17
MBE832
16
PILFIL
0.95
0.95
16 10 k 10 k
17
MBE833
17 18
IFGND FMDEM
0 1.0
180 18 910
17
MBE834
19
AFC(n)
10 k
10 k 19
MHA106
1999 Aug 26
21
Philips Semiconductors
Product specication
TEA5757; TEA5759
PIN NO. 20
DC VOLTAGE (V) AM FM
EQUIVALENT CIRCUIT
10 k
10 k 20
MHA107
21
FSI
1.4 V 40 k
22 23 24
3.0
3.0
24
100
26
MBE837
25
XTAL
50 k 50 k 50 k
25
26
MBE838
26
DGND
1999 Aug 26
22
Philips Semiconductors
Product specication
TEA5757; TEA5759
PIN NO. 27
DC VOLTAGE (V) AM FM
EQUIVALENT CIRCUIT
27
26
MBE839
28 29
DATA WRITE-ENABLE
28
100 100 k 50 k 29 26
MBE840
30
P0
23 120 100 k
30 20 k
26
MHA108
31
P1
23 120 100 k
31 20 k
26
MHA109
1999 Aug 26
23
Philips Semiconductors
Product specication
TEA5757; TEA5759
PIN NO. 32
DC VOLTAGE (V) AM FM
EQUIVALENT CIRCUIT
34 20 k 32
MBE842
33
FM-IFI2
0.73
34 140 33 2.2 k 6 pF
17
MBE843
34
VSTAB(B)
1.4
1.4
7 1 k 1 34
MBE844
35
FM-IFO1
0.69
34
35
560
MBE845
36
AM-IFI/O2
1.4
1.4
34
36
3.6 k
3.6 k
17
MBE846
1999 Aug 26
24
Philips Semiconductors
Product specication
TEA5757; TEA5759
PIN NO. 37
EQUIVALENT CIRCUIT
140 37 1.9 k 6 pF
17
MBE847
38
VSTAB(A)
1.4
1.4
7 1 k 1 38
MBE848
39
FM-MIXER
1.0
39 680
30 pF
MHA110
40
AM-MIXER
1.4
1.4
40 38
MBE850
41
AM-IFI1
1.4
1.4
38 3 k 41 7.5 k 7.5 k
17
MBE851
1999 Aug 26
25
Philips Semiconductors
Product specication
TEA5757; TEA5759
PIN NO. 42 43
EQUIVALENT CIRCUIT
220 43 42 3
MHA105
44
AGC
0.1
0.7
1 k 1 k 44
1 k
17
MBE852
1999 Aug 26
26
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75 kHz GND P1 P0 47 k TUNE 22 nF L1 (8) 18 pF BB112 (14)
Philips Semiconductors
BB804
BB804
18 k TUNE
10 pF
18 k L8 (1) TUNE
10 pF
L7 (2)
VSTAB(A) K1
(3)
VSTAB(B) K3 K2
(4) (5)
100 nF VCC1
3 4.7 nF 43
39
37
35
33
17
18
21 16
2.2 F
MO/ST
12 9
TEA5757; TEA5759
12 nF 14
(12)
15 12 nF 13 26 31 30 2 6 L2 (9) 18 pF L3
(10) (11)
100 nF
(12)
19 20 32
470 nF
4.7 F
VSTAB(B) L5 (7)
40
41
36 10 F
44 10 nF
22
10 220 nF
11
TEA5757; TEA5759
330 pF L4 470 nF
MHA113
(1) L8 = MC117 E523FN-2000242, 38 pF 3%, 18 pF BB112 (14) TOKO. VSTAB(A) VSTAB(B) (2) L7 = MC117 E523FN-2000242, 38 pF 3%, 470 pF 47 k TOKO. (3) K1 = SFE10.7MS3, MURATA. TUNE (4) K2 = SFE10.7MS3, MURATA. (5) K3 = CDA10.7-MG40-A, MURATA. (6) L6 = 60 nH. (7) L5 = 7P A7MCS-11845Y, C = 180 pF, Q = 90, TOKO. (8) L1 = 250 H ferroceptor. Fig.8 Application diagram. (9) L2 = 7P 7DRS-11459N, 110 H at 796 kHz, Q = 80, TOKO.
handbook, full pagewidth
TUNE
VCC2
Product specication
(10) L3 = 7P A7MCS-11844N, C = 180 pF, Q = 90, TOKO. (11) L4 = 7P A7MCS-11845Y, C = 180 pF, Q = 90, TOKO. (12) De-emphasis time constant is 50 s: Cde-emp = 12 nF. De-emphasis time constant is 75 s: Cde-emp = 18 nF. (13) Standard applications: 30 ppm at 25 C. Short wave applications: 20 ppm at 25 C. (14) Alternatively BB512, Siemens or KV1561A, TOKO.
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75 kHz GND P1 P0
50 1 MHz Vi1 43 6.8 L1(6)
(12)
Philips Semiconductors
50 Vi4
330 50
BB804
BB804
10.7 MHz 1 nF
18 k TUNE
10 pF
18 k L8 (1) TUNE
10 pF
B L7 (2) VSTAB(A) A K1
(3)
S5
VSTAB(B) K3 K2
(4) (5)
VCC1
100 nF
10 k
3
50 Vi5 100 MHz 27 560
39
37
35
33
17
18
21 16 24
1 nF
91
43
12 9
2.2 k 470 nF 68 k
(11)
14 15
12 nF
100 nF
TEA5757; TEA5759
13
(11)
12 nF
26 31 30 2
680 pF
19 20 32 6
(8)
40
S1 A B
41
36 10 F
44 10 nF
22
10
B S2 A A S3
11
L2 18 pF
(1) L8 = MC117 E523FN-2000242, 38 pF 3%, 18 pF (13) TOKO. BB112 (2) L7 = MC117 E523FN-2000242, 38 pF 3%, 470 pF TOKO. 47 k (3) K1 = SFE10.7MS3, MURATA. (4) K2 = SFE10.7MS3, MURATA. TUNE (5) K3 = CDA10.7-MG40-A, MURATA. (6) L1 = 2228130091. (7) L5 = 7P A7MCS-11845Y, C = 180 pF, Q = 90, TOKO. (8) L2 = 7P 7DRS-11459N, 110 H at 796 kHz, Q = 80, TOKO. (9) L3 = 7P A7MCS-11844N, C = 180 pF, Q = 90, TOKO. (10) L4 = 7P A7MCS-11845Y, C = 180 pF, Q = 90, TOKO.
L3
(9)
3 k
TEA5757; TEA5759
470 nF 220 nF L4
(10)
VSTAB(A) Vi2 50
VSTAB(B)
TUNE VCC2
5 k 50 MPX
450 kHz
Product specication
MHA114
(11) De-emphasis time constant is 50 s: Cde-emp = 12 nF. De-emphasis time constant is 75 s: Cde-emp = 18 nF. (12) Standard applications: 30 ppm at 25 C. Short wave applications: 20 ppm at 25 C. (13) Alternatively BB512, Siemens or KV1561A, TOKO.
Philips Semiconductors
Product specication
TEA5757; TEA5759
QFP44: plastic quad flat package; 44 leads (lead length 1.3 mm); body 10 x 10 x 1.75 mm
SOT307-2
c
y X
A 33 34 23 22 ZE
A1
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A max. 2.10 A1 0.25 0.05 A2 1.85 1.65 A3 0.25 bp 0.40 0.20 c 0.25 0.14 D (1) 10.1 9.9 E (1) 10.1 9.9 e 0.8 HD 12.9 12.3 HE 12.9 12.3 L 1.3 Lp 0.95 0.55 v 0.15 w 0.15 y 0.1 Z D (1) Z E (1) 1.2 0.8 1.2 0.8 10 0o
o
Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT307-2 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION
1999 Aug 26
29
Philips Semiconductors
Product specication
TEA5757; TEA5759
Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. For packages with leads on two sides and a pitch (e): larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves at the downstream end. For packages with leads on four sides, the footprint must be placed at a 45 angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Manual soldering Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
1999 Aug 26
30
Philips Semiconductors
Product specication
TEA5757; TEA5759
Suitability of surface mount IC packages for wave and reow soldering methods SOLDERING METHOD PACKAGE WAVE BGA, SQFP PLCC(3), SO, SOJ LQFP, QFP, TQFP SSOP, TSSOP, VSO Notes 1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods. 2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version). 3. If wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. 4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. DEFINITIONS Data sheet status Objective specication Preliminary specication Product specication Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specication is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specication. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains nal product specications. not suitable suitable(2) recommended(3)(4) recommended(5) suitable not not suitable suitable suitable suitable suitable HLQFP, HSQFP, HSOP, HTSSOP, SMS not REFLOW(1)
1999 Aug 26
31
For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA 67
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
545002/03/pp32
Aug 26