Vous êtes sur la page 1sur 13

EE231 Solid State Devices

Professor: Vivek Subramanian viveks@eecs.berkeley.edu 571 Cory Hall (510) 643-4535 Alejandro de la Fuente Vornbrock, adelafv@eecs.berkeley.edu

TA:

Web Page: http://www-inst.eecs.berkeley.edu/~ee231/ http://organics.eecs.berkeley.edu/~viveks/ee231 Newsgroup: ucb.class.ee231


EE231 Vivek Subramanian Slide 0-1

An Important Note Professor Subramanian is in Japan today, and will return tomorrow. He apologizes for not being here. Regular lectures will begin on Thursday

EE231 Vivek Subramanian

Slide 0-2

Schedule
Lectures: 299 Cory, Tue/Thu, 2pm-3:30pm Discussion:
Section 101 Monday, 5pm-6pm 299 Cory

DISCUSSION SECTIONS WILL BEGIN ON JAN 22nd

Office Hours:
Vivek Subramanian (571 Cory):
Tue 9:30am-10:30am (EE231 Priority) Tue 1pm-2pm (EE143 Priority) Th 9:30am-10:30am (EE143 + EE231)

Alejandro de la Fuente, Wed 10:30am-11:30am (197 Cory)


EE231 Vivek Subramanian Slide 0-3

Reading Material
Primary Text:
Silicon Processing for the VLSI Era, Vol. 3 - The submicron MOSFET S.Wolf Lattice Press, 1995

Reference Texts:
Fundamental of Modern VLSI devices Y. Taur, T. Ning Cambridge University Press, 1998 Device Electronics for Integrated Circuits R. S. Muller and T. I. Kamins Wiley
EE231 Vivek Subramanian Slide 0-4

Grading
Midterm design project
MOSFET design, assigned in Mar/April (~2 week duration) You must work alone
20% Letter grades will be assigned based approximately on the following scale: A+: 95-100 A: 88-95 A-: 85-88 B+: 80-85 B: 73-80 B-: 68-73 C+: 65-68 C: 60-65 C-: 55-60 D: 40-55 F: <40

Tests (~3-4)
~45 minutes each given periodically per schedule Open book and notes No makeups

50%

Final Paper
Will be assigned approx. 3 weeks before end of class Due on last day of class
30%

EE231 Vivek Subramanian

Slide 0-5

Text Coverage
The text will serve primarily as a reference (i.e., notes supercede text)
Chapter 3. MOS Capacitor
3.2 Qualitative description 3.3 Quantitative analysis of Qs(Vs) 3.4 VT 3.5 Charge Traps 3.6 VT 3.7 Optional reading

Chapter 6. Isolation Technology (Assigned Reading)


6.1 Introduction. Do read p. 324 6.2 LOCOS, the basic isolation technology 6.4 Modified (advanced) LOCOS 6.5 Shallow Trench ---beyond LOCOS 6.6 (pp.405--413 only) CMOS isolation

EE231 Vivek Subramanian

Slide 0-6

Text Coverage
Chapter 4. Long Channel MOSFET
4.1 Introduction 4.2-4.5.2 Omit pages 137-169. 4.5.3-4.5.6 IV models of decreasing accuracy and complexity. 4.6 VT Control by Ion Implantation. Omit 4.6.4 4.7 Subthreshold Current

Chapter 1 & Chapter 2. Device Simulators (assigned reading)


1.2.2 Equations to be solved 2.8-2.10.1.1 Omit p.66 Procedure of Device Simulation 2.12 Device Simulators

Chapter 5. Advanced MOSFET


5.2 VT Roll-off (DIBL or Short-Channel effect) 5.3 Punchthrough 5.4 IV of Short Channel MOSFET 5.5 SPICE Model 5.6-5.7 MOSFET Design. Omit pp. 279-284 5.8 PMOSFET
EE231 Vivek Subramanian Slide 0-7

Text Coverage
Chapter 8. CMOS Well Technology (assigned reading)
8.1 N-well, P-well and Twin-well 8.4 High-energy implant

Chapter 9. Hot carrier Effect and LDD


9.1-9.2 Models of maximum Channel Field and Substrate Current 9.3 Hot-Carrier Induced MOSFET Degradation 9.4 MOSFET Lifetime 9.6 Light Doped Drain(LDD) 9.12 (pp.630-636 only) More LDD Structures 9.13 PMOS Hot-Carrier Effect 9.14 (Omit pp.648-653) Improving the oxide

Chapter 7. Gate Oxide


7.1 Introduction 7.2 (Assigned Reading) Microscopic Structure of Si/SiO2 Interface 7.3-7.8 Will be replaced by Reliability of Thin SiO2, Schuefrag et al 7.9 (Assigned Reading) Thin Oxide Growth Technology 7.10 (Assigned Reading) Plasma-Processing Charging Damage
EE231 Vivek Subramanian Slide 0-8

Introduction to Process and Device Simulation: Using TSUPREM4 and Medici In this class, you will make extensive use of process and device simulation in your projects and term papers. Therefore, it is imperative that you learn to make use of these tools ASAP

EE231 Vivek Subramanian

Slide 0-9

Logistics You will need an account on either the instructional machines (cory, mingus, etc., open to all students in EE231) or the device cluster (open only to device group students) If you need an instructional account, go to: http://www-inst.eecs.berkeley.edu and follow the instructions to obtain an account
EE231 Vivek Subramanian Slide 0-10

Why Simulation? Process (TSuprem4) and device (Medici) simulators are indispensable tools in the device community Simulators provide insight on processing steps, device physics, feedback in device design, and are important areas of research Simulation does not replace design!!!
EE231 Vivek Subramanian Slide 0-11

Design Flow
Feedback Feedback Device design NA, tox, W, L, Vt, etc. Device Physics Feedback

TSUPREM4 Process simulation Process Technology

MEDICI Device simulation Final Device

EE231 Vivek Subramanian

Slide 0-12

TSUPREM-4
Simulates all major process steps in 2-D Deposition Implant Oxidation Diffusion Lithography Etc. Analytical and empirical models are used to predict device cross-sections and doping profiles
EE231 Vivek Subramanian Slide 0-13

MEDICI
Simulates electrical characteristics of a given 2-D device structure Takes voltage bias at each electrode Program solves Poissons equation to determine the potential distribution in a device Applies various models for carrier transport to determine the current at each terminal
EE231 Vivek Subramanian Slide 0-14

Getting started
TSUPREM4 and MEDICI both take a text file as input Outputs text that is piped to the terminal Output includes simulation information and user-specified data (plots, cross-sections, values, etc.) bcpmoss4.out

bcpmoss4.in

plots and/or profiles TSUPREM


EE231 Vivek Subramanian Slide 0-15

Getting started
Use text editor to create decks (vi, emacs, pico) Simulators are run off UNIX workstation or PC with Hummingbird
https://inst.eecs.berkeley.edu/cgi-bin/pub.cgi?file=tcad.help

/share/b/bin/tsuprem4 Set path = ( $path /share/b/bin) For device group computers: /project/eecs/device-apps/synopsys/Y_2006.06/bin LM_LICENSE_FILE=27000@cory Pop up windows: setenv DISPLAY [ip_address_or_computer_name] % tsuprem4 [input_file_name]
EE231 Vivek Subramanian Slide 0-16

Anatomy of a TSUPREM Deck


Grid Definition Initialize Structure Process Flow Electrode Definition Save Structure Plot Cross-Section
EE231 Vivek Subramanian Slide 0-17

Anatomy of a Medici Deck


Load Structure

Choose Models Initial Solution Plot Structure


Curve simulation

Plot generation
EE231 Vivek Subramanian Slide 0-18

Simulator Manuals
TSuprem and Medici Manuals are valuable resource for Input Statements and Examples
http://www-device.eecs.berkeley.edu/~chl/
/project/eecs/device-apps/synopsys/Y_2006.06/taurus-[medici or tsuprem4]/manuals_pdf

Can find Input Statement Fields and Capabilities

EE231 Vivek Subramanian

Slide 0-19

Example: Basic CMOS Process


Lets design a NMOSFET (L=0.65 um)

Gate Source Substrate Drain

(From example deck s4ex4*.inp) /share/instsww/synopsys/tcad/tcad-suprem-4_v2002.4/ tsuprem4_2002.4.0/examples/


EE231 Vivek Subramanian Slide 0-20

10

Example: TSUPREM Input

Start with ptype wafer

Oxidation

Define active region


EE231 Vivek Subramanian Slide 0-21

Example: TSUPREM Input


Ion implantation

Field Oxide

Plot initial structure

EE231 Vivek Subramanian

Slide 0-22

11

Example: TSUPREM Output

EE231 Vivek Subramanian

Slide 0-23

Grid Structure
Divides the device cross-section into a 2-D array of discrete grid points Necessary for SUPREM and MEDICI to calculate solutions A finer grid is more accurate but also increases simulation time
EE231 Vivek Subramanian Slide 0-24

12

Defining the Grid


grid.fac is the most straightforward way to vary grid density

Grid spacing can be varied spatially: Line Eliminate Boundary Region Grids can also be defined with saved structure files
EE231 Vivek Subramanian Slide 0-25

Simulation as used in EE231


You will be designing MOSFETs as part of your mid-term design project Your designs will likely involve use of TSUPREM and MEDICI to create some advanced MOSFET structure You will use need to be very familiar will TSUPREM and/or MEDICI to successfully complete the project in the time allotted; therefore, you should take the time now to learn how to use these tools The online examples are an excellent starting point for self-paced learning
EE231 Vivek Subramanian Slide 0-26

13