A project report on Silicon and silicon carbide based schottky Diode Submitted to Birla Institute of Technology & Science

In Partial fulfilment of Power Device microelectronics and selection BY Ashok Kumar(2011H131090P) Under esteemed guidance of Dr. Abhijit asathi Associate Professor

Introduction:SIC is receiving increased attention as a semiconductor material for high-power, high-temperature, and highfrequency devices for applications in aerospace and groundbased power systems. Recent comprehensive reviews of the status of SiC materials and device technology can be found in and Devices based on SiC can offer fast switching characteristics and high-power handling capability often needed for such applications. Due to the higher breakdown electric field and wider band gap of SiC, high-voltage ( 200 V) Schottky diodes with relatively lower leakage current and on-resistance compared to Si Schottky diodes can be fabricated on SiC. These Schottky diodes have the potential to be a valuable alternative to Si-based switching devices for applications where both power and speed need to be delivered. For high-voltage Schottky diodes, it is necessary to have an edge termination around the periphery of the diodes to reduce the electric field crowding at the diode edges. The experimentally obtained values of breakdown voltage for SiC Schottky diodes without edge termination have been found to be considerably lower than those with some form of edge termination. Several techniques have been shown to reduce the field crowding at the edges, thus resulting in higher breakdown voltages. These include 1) the use of floating metal field rings (FMR) and resistive Schottky barrier field plates (RESP) the use of implantation of neutral species at the periphery of the diode to form an amorphous area around the periphery of the device p-n junction guard-ring termination formed by a local oxide process (LOCOS) In most of these structures, the SiC surface is unpassivated and there is no dielectric isolation between devices on the chip.

Steps For designing a device in atlas :1. Defining A Structure

A device structure can be defined in three different ways for use in ATLAS. The first way is to read an existing structure from a file. The structure is created either by an earlier ATLAS run or another program such as ATHENA or DEVEDIT. A MESH statement loads in the mesh, geometry, electrode positions, and doping of the structure.

Automatic Meshing (Auto-meshing) Using The Command Language

Automatic meshing provides a simpler method for defining device structures and meshs than the standard method described in Section 2.6.3: Using The Command Language To Define A Structure. Auto-meshing is particularly suited for epitaxial structures, especially device structures with many layers (for example, a VCSEL device). Auto-meshing unburdens you from the delicate bookkeeping involved in ensuring that the locations of mesh lines in the Y direction are consistently aligned with the edges of regions. This is done by specifying the locations of Y mesh lines in the REGION statements. The following sections will show how auto-meshing is done, using a few simple examples.

Specifying The Mesh And Regions

In the first example, we use a simple device to show you the fundimental concepts of auto-meshing. The first statements in this example are as follows: MESH AUTO X.MESH LOCATION=-1.0 SPACING=0.1 X.MESH LOCATION=1.0 SPACING=0.1

2. Doping:Analytical Doping Profiles

Analytical doping profiles can have uniform or Gaussian forms. The parameters defining the analytical distribution are specified in the DOPING statement. Two examples are shown below with their combined effect . DOPING UNIFORM CONCENTRATION=1E16 N.TYPE REGION=1

DOPING GAUSSIAN CONCENTRATION=1E18 CHARACTERISTIC=0.05 P.TYPE \

X.LEFT=0.0 X.RIGHT=1.0 PEAK=0.1

DOPING UNIFORM CONCENTRATION=1E16 N.TYPE REGION=1 DOPING GAUSSIAN CONCENTRATION=1E18 CHARACTERISTIC=0.05 P.TYPE \ X.LEFT=0.0 X.RIGHT=1.0 PEAK=0.1 The first DOPING statement specifies a uniform n-type doping density of 1016 cm-3 in the region that was previously labelled as region #1. The position parameters: X.MIN, X.MAX, Y.MIN, and Y.MAX can be used instead of a region number. The second DOPING statement specifies a p-type Gaussian profile with a peak concentration of 1018cm-3. This statement specifies that the peak doping is located along a line from x = 0 to x = 1 microns. Perpendicular to the peak line, the doping drops off according to a Gaussian distribution with a standard deviation of 0.05 mm. At x < 0 or x > 1, the doping drops off laterally with a default standard deviation that is 70% of CHARACTERISTIC.

2. material :
The MATERIAL statement allows you to specify your own values for these basic parameters. Your values can apply to a specified material or a specified region. For example, the statement: MATERIAL MATERIAL=Silicon EG300=1.12 MUN=1100

sets the band gap and low field electron mobility in all silicon regions in the device. If the material properties are defined by region, the region is specified using the REGION or NAME parameters in the MATERIAL statement. For example, the statement: MATERIAL REGION=2 TAUN0=2e-7 TAUP0=1e-5 sets the electron and hole Shockley-Read-Hall recombination lifetimes for region number two . If the name, base, has been defined using the NAME parameter in the REGION statement, then the statement: MATERIAL NAME=base NC300=3e19 sets the conduction band density of states at 300 K for the region named base.

Code for SiC Based schottky Diode:go atlas mesh space.mult=1.0 # x.mesh loc=0.00 spac=0.5 x.mesh loc=3.00 spac=0.2 x.mesh loc=5.00 spac=0.25 x.mesh loc=7.00 spac=0.25 x.mesh loc=9.00 spac=0.2 x.mesh loc=12.00 spac=0.5 # y.mesh loc=0.00 spac=0.1 y.mesh loc=1.00 spac=0.1 y.mesh loc=2.00 spac=0.2 y.mesh loc=5.00 spac=0.4 region region region electr electr #.... doping num=1 material=a-SiC num=1 material=a-SiC num=2 material=a-SiC y.min=2 name=anode x.min=5 name=cathode bot length=2 y.max=1 y.max=5

N-epi doping n.type conc=5.e16 uniform

#.... doping doping

Guardring doping p.type conc=1.e19 x.min=0 x.max=3 junc=1 rat=0.6 gauss p.type conc=1.e19 x.min=9 x.max=12 junc=1 rat=0.6 gauss

#.... doping #

N+ doping n.type conc=1e20 y.min=2

y.max=5

x.min=0 x.max=12 uniform

# SECTION 4: Material & Models Definitions # material permittivity=9.66 eg300=3.00 egbeta=0. egalpha=3.3e-4 \ augn=2.8e-31 augp=9.9e-32 vsat=2.0e7 \ tmun=2.25 tmup=2.25 lt.taun=2.3 lt.taup=2.3 #[ eg300 = energy band gap] # [augn = auger recombination] #[ vsat = mobility parameter] #[tmu = temp dependent mobility ] save outf=diodeex01_0.str tonyplot diodeex01_0.str -set diodeex01_0.set

model

fldmob srh auger bgn print temperature=300

# Parallel Field Dependence (FLDMOB)

# Shockley Read Hall recombination (SRH)

# auger recombination (auger) #Band Gap Narrowing (BGN) contact # solve name=anode workf=4.97

init

method newton log outfile=diodeex01.log solve vanode=.05 vstep=.05 vfinal=1 name=anode

tonyplot diodeex01.log -set diodeex01_log.set quit

2. Code For Si Based schottky Diode:go atlas mesh space.mult=1.0 # x.mesh loc=0.00 spac=0.5 x.mesh loc=3.00 spac=0.2 x.mesh loc=5.00 spac=0.25 x.mesh loc=7.00 spac=0.25 x.mesh loc=9.00 spac=0.2 x.mesh loc=12.00 spac=0.5 # y.mesh loc=0.00 spac=0.1 y.mesh loc=1.00 spac=0.1 y.mesh loc=2.00 spac=0.2 y.mesh loc=5.00 spac=0.4 region electr electr #.... doping #.... doping doping #.... doping num=1 silicon length=2

name=anode x.min=5 name=cathode bot

N-epi doping n.type conc=5.e16 uniform Guardring doping p.type conc=1e19 x.min=0 x.max=3 junc=1 rat=0.6 gauss p.type conc=1e19 x.min=9 x.max=12 junc=1 rat=0.6 gauss N+ doping n.type conc=1e20 x.min=0 x.max=12 y.top=2 y.bottom=5 uniform

save outf=diodeex01_0.str tonyplot diodeex01_0.str -set diodeex01_0.set model fldmob srh auger bgn print temperature=300 impact selb an1=1.66e6 an2=1.66e6 bn1=1.273e7 bn2=1.273e7 \ ap1=5.18e6 ap2=5.18e6 bp1=1.4e7 bp2=1.4e7 solve init method newton log outfile=diodeex01.log solve vanode=.5 vstep=.5 vfinal=1 name=anode tonyplot diodeex01.log -set diodeex01_log.set quit

Si based schottky Diode

Forward characteristics at 1000 K

SiC Based Schottky Diode :-

Forward Characteristics at 1000K