BC640 PNP Epitaxial Silicon Transistor

March 2009

BC640
PNP Epitaxial Silicon Transistor
Switching and Amplifier Applications
Complement to BC639

TO-92

1. Emitter 2. Collector 3. Base

Absolute Maximum Ratings T

Symbol
VCER VCES VCEO VEBO IC ICP IB PC TJ TSTG Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Base Current

= 25C unless otherwise noted

Parameter
Collector-Emitter Voltage at RBE=1K

Value
-100 -100 -80 -5 -1 -1.5 -100 1 150 -65 ~ 150

Units
V V V V A A mA W C C

Collector Power Dissipation Junction Temperature Storage Temperature

Electrical Characteristics
Symbol
BVCEO ICBO IEBO hFE1 hFE2 hFE3 VCE (sat) VBE (on) fT

Ta = 25C unless otherwise noted

Parameter
Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain

Test Condition
IC= -10mA, IB=0 VCB= -30V, IE=0 VEB= -5V, IC=0 VCE= -2V, IC= -5mA VCE= -2V, IC= -150mA VCE= -2V, IC= -500mA IC= -500mA, IB= -50mA VCE= -2V, IC= -500mA VCE= -5V, IC= -10mA, f=50MHz

Min.
-80

Typ.

Max.
-0.1 -10

Units
V A A

25 40 25

160 -0.5 -1 100 V V MHz

Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product

2009 Fairchild Semiconductor Corporation BC640 Rev. C3 1

www.fairchildsemi.com

BC640 PNP Epitaxial Silicon Transistor

Package Marking and Ordering Information

Device Marking
BC640 BC640 BC640 BC640 BC640 BC640 BC640 BC640

Device
BC640 BC640BU BC640TA BC640TAR BC640TF BC640TFR BC640_J35Z BC640_J61Z

Package
TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92

2009 Fairchild Semiconductor Corporation BC640 Rev. C3 2

www.fairchildsemi.com

BC640 PNP Epitaxial Silicon Transistor

Typical Performance Characteristics

Figure 1. Static Characteristic
-500

Figure 2. DC Current Gain

1000

IB = - 1.8 mA

IC[mA], COLLECTOR CURRENT

IB = - 1.6 mA
-400

VCE = - 2V

IB = - 1.2 mA
-300

IB = - 1.0 mA IB = - 0.8 mA

hFE, DC CURRENT GAIN

IB = - 1.4 mA

100

-200

IB = - 0.6 mA IB = - 0.4 mA

-100

IB = - 0.2 mA

-0 -0 -10 -20 -30 -40 -50

10 -1 -10 -100 -1000

VCE[V], COLLECTOR-EMITTER VOLTAGE

IC[mA], COLLECTOR CURRENT

Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
-10

Figure 4. Base-Emitter On Voltage

-1000

IC = 10 IB

-1

VBE(sat)

IC[mA], COLLECTOR CURRENT

VCE = - 2V

-100

-0.1

-10

VCE(sat)

-0.01 -1 -10 -100 -1000

-1 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2

IC[mA], COLLECTOR CURRENT

VBE[V], BASE-EMITTER VOLTAGE

Figure 5. Collector Output Capacitance

100

f=1MHz

Cob[pF], CAPACITANCE

10

1 -1 -10 -100

VCB[V], COLLECTOR-BASE VOLTAGE

2009 Fairchild Semiconductor Corporation BC640 Rev. C3 3

www.fairchildsemi.com

BC640 PNP Epitaxial Silicon Transistor

Mechanical Dimensions

TO-92
4.58 0.15
+0.25

14.47 0.40

0.46 0.10

4.58 0.20

1.27TYP [1.27 0.20] 3.60 0.20

1.27TYP [1.27 0.20]

0.38 0.05

+0.10

3.86MAX

1.02 0.10

0.38 0.05

+0.10

(R2.29)

(0.25)

Dimensions in Millimeters
2009 Fairchild Semiconductor Corporation BC640 Rev. C3 4 www.fairchildsemi.com

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Rev. I39

2008 Fairchild Semiconductor Corporation

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