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PD - 94112 IRFP064V HEXFET ® Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic

PD - 94112

IRFP064V

HEXFET ® Power MOSFET

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications Description

D G S
D
G
S

V DSS = 60V

R DS(on) = 5.5m

I D = 130A

Advanced HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

TO-247AC

TO-247AC

Absolute Maximum Ratings

 

Parameter

 

Max.

Units

I D @ T C = 25°C

Continuous Drain Current, V GS @ 10V

 

130

 

I D @ T C = 100°C

Continuous Drain Current, V GS @ 10V

 

95

A

I DM

Pulsed Drain Current

 

520

P D @T C = 25°C

Power Dissipation

 

250

W

 

Linear Derating Factor

 

1.7

W/°C

V GS

Gate-to-Source Voltage

 

± 20

V

 

I AR

Avalanche Current

 

130

A

E AR

Repetitive Avalanche Energy

 

25

mJ

dv/dt

Peak Diode Recovery dv/dt

 

4.7

V/ns

T

J

Operating Junction and Storage Temperature Range

-55

to + 175

 

T

STG

 

°C

 

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

 

Mounting torque, 6-32 or M3 srew

10 lbf•in (1.1N•m)

 

Thermal Resistance

 

Parameter

Typ.

Max.

Units

R JC

Junction-to-Case

–––

0.60

 

R CS

Case-to-Sink, Flat, Greased Surface

0.24

–––

°C/W

R JA

Junction-to-Ambient

–––

40

www.irf.com

1

IRFP064V

Electrical Characteristics @ T J = 25°C (unless otherwise specified)

@ T J = 25°C (unless otherwise specified)   Parameter Min. Typ. Max. Units  
 

Parameter

Min.

Typ.

Max.

Units

 

Conditions

V

(BR)DSS

Drain-to-Source Breakdown Voltage

60

–––

–––

V

V

GS = 0V, I D = 250µA

V (BR)DSS /

T J

Breakdown Voltage Temp. Coefficient

–––

0.067

–––

V/°C

Reference to 25°C, I D = 1mA

R

DS(on)

Static Drain-to-Source On-Resistance

–––

–––

5.5

m

V

GS = 10V, I D = 78A

V

GS(th)

Gate Threshold Voltage

2.0

–––

4.0

V

V

DS = V GS , I D = 250µA

g

fs

 

Forward Transconductance

88

–––

–––

S

V

DS = 25V, I D = 78A

I

 

Drain-to-Source Leakage Current

–––

–––

25

µA

V

DS = 60V, V GS = 0V

 

DSS

–––

–––

250

V

DS = 48V, V GS = 0V, T J = 150°C

I

 

Gate-to-Source Forward Leakage

–––

–––

100

nA

V

GS = 20V

 

GSS

Gate-to-Source Reverse Leakage

–––

–––

-100

V

GS = -20V

Q

g

Total Gate Charge

–––

–––

260

 

I D = 130A

 

Q

gs

Gate-to-Source Charge

–––

–––

68

nC

V

DS = 48V

Q

gd

Gate-to-Drain ("Miller") Charge

–––

–––

94

V

GS = 10V, See Fig. 6 and 13

t

d(on)

 

Turn-On Delay Time

–––

26

–––

 

V

DD = 30V

t

r

Rise Time

–––

200

–––

ns

I D = 130A

 

t

d(off)

 

Turn-Off Delay Time

–––

100

–––

R

G = 4.3

t

f

Fall Time

–––

150

–––

V

GS = 10V, See Fig. 10

L

D

 

Internal Drain Inductance

–––

5.0

–––

 

Between lead, 6mm (0.25in.)

D G
D
G

L

S

Internal Source Inductance

–––

13

–––

nH

from package and center of die contact

 

S

C

iss

Input Capacitance

–––

6760

–––

 

V

GS = 0V

C

oss

Output Capacitance

–––

1330

–––

V

DS = 25V

C

rss

Reverse Transfer Capacitance

–––

290

–––

pF

ƒ

= 1.0MHz, See Fig. 5

E

AS

Single Pulse Avalanche Energy

–––

1880 310

 

mJ

I AS = 130A, L = 37µH

 

Source-Drain Ratings and Characteristics

 

Parameter

Min.

Typ.

Max.

Units

 

Conditions

I

S

Continuous Source Current (Body Diode)

       

MOSFET symbol

D G S
D
G
S
 

–––

–––

130

A

showing the integral reverse p-n junction diode.

I

SM

Pulsed Source Current (Body Diode)

–––

–––

520

 

V

SD

Diode Forward Voltage

–––

–––

1.2

V

T

J = 25°C, I S = 130A, V GS = 0V

t

rr

Reverse Recovery Time

–––

94

140

ns

T

J = 25°C, I F = 130A

 

Q

rr

Reverse Recovery Charge

–––

360

540

nC

di/dt = 100A/µs

 

t

on

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D )

Notes:

Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)

Starting T J = 25°C, L = 260µH

R G = 25

, I AS = 50A. (See Figure 12)

I SD T J

130A, di/dt 230A/µs, V DD V (BR)DSS ,

175°C

Pulse width 400µs; duty cycle 2%. This is a typical value at device destruction and represents operation outside rated limits. This is a calculated value limited to T J = 175°C . Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 90A.

IRFP064V 1000 VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 10

IRFP064V

1000 VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 10 4.5V
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
100
10
4.5V
20µs
PULSE
WIDTH
T
=
°
J
25
C
1
0.1
1
10
100
I
, Drain-to-Source Current (A)
D

V DS

, Drain-to-Source Voltage (V)

1000 VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 4.5V 10
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
100
4.5V
10
20µs
PULSE
WIDTH
T
=
°
J
175
C
1
0.1
1
10
100
I
, Drain-to-Source Current (A)
D

V DS

, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

1000 T = 175 ° C J 100 T = 25 ° C J 10
1000
T
= 175
°
C
J
100
T
= 25
°
C
J
10
V
DS
= 50V
20µs
PULSE WIDTH
1
4.0
5.0
6.0
7.0
8.0
9.0
10.0
I
, Drain-to-Source Current (A)
D
R
, Drain-to-Source On Resistance
DS(on)
(Normalized)

V GS

, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 2. Typical Output Characteristics 3.0 I = 70A D 2.5 2.0 1.5 1.0 0.5
Fig 2. Typical Output Characteristics
3.0
I
= 70A
D
2.5
2.0
1.5
1.0
0.5
= 10V
V GS
0.0
-60 -40 -20
0
20
40
60
80 100 120 140 160 180
T
, Junction Temperature (
° C)
J

Fig 4. Normalized On-Resistance Vs. Temperature

IRFP064V

12000 V = 0V, f = 1 MHZ GS C = C SHORTED iss gs
12000
V
= 0V,
f = 1 MHZ
GS
C
=
C
SHORTED
iss
gs + C gd ,
C ds
10000
C
=
C
rss
gd
C
oss = C ds + C gd
8000
Ciss
6000
4000
Coss
2000
Crss
0
1
10
100
Capacitance(pF)C,

V DS , Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage

1000 100 T = 175 ° C J 10 1 T = 25 ° C
1000
100
T
= 175
°
C
J
10
1
T
= 25
°
C
J
V
= 0 V
GS
0.1
0.0
0.4
0.8
1.2
1.6
2.0
2.4
I
, Reverse Drain Current (A)
SD

V SD

,Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage

(V) Fig 7. Typical Source-Drain Diode Forward Voltage 20 I D = 130A V = 48V
20 I D = 130A V = 48V DS V = 30V DS 16 12
20
I
D
= 130A
V
= 48V
DS
V
= 30V
DS
16
12
8
4
FOR
TEST CIRCUIT
SEE FIGURE 13
0
0
50
100
150
200
250
300
V
, Gate-to-Source Voltage (V)
GS

Q

G , Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage

10000 OPERATION IN THIS AREA LIMITED BY R DS (on) 1000 100 100µsec 1msec 10
10000
OPERATION
IN
THIS AREA
LIMITED BY R
DS (on)
1000
100
100µsec
1msec
10
Tc = 25°C
Tj =
175°C
10msec
Single
Pulse
1
1
10
100
1000
I D
(A)CurrentDrain-to-Source,

V DS , Drain-toSource Voltage (V)

Fig 8. Maximum Safe Operating Area

, Drain Current (A)

D

I

)

thJC

Thermal Response (Z

, Drain Current (A) D I ) thJC Thermal Response (Z IRFP064V 140 R D LIMITED

IRFP064V

140 R D LIMITED BY PACKAGE V DS 120 V GS D.U.T. R G 100
140
R D
LIMITED BY PACKAGE
V DS
120
V GS
D.U.T.
R G
100
+
-
V DD
80
V GS
Pulse Width 1
µs
Duty Factor 0.1 %
60
40
Fig 10a. Switching Time Test Circuit
20
V DS
90%
0
25
50
75
100
125
150
175
T
C , Case Temperature
(
° C)
10%
V GS
Fig 9. Maximum Drain Current Vs.
Case Temperature
t d(on)
t r
t d(off)
t f
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
P DM
0.05
t
1
t
2
0.02
SINGLE PULSE
(THERMAL RESPONSE)
0.01
Notes:
1. Duty factor
D =
t
/ t
1
2
2. Peak T
=
x Z
+ T
J
P DM
thJC
C
0.01
0.00001
0.0001
0.001
0.01
0.1

t 1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRFP064V

15V L DRIVER V DS D.U.T R G + - V DD I AS 20V
15V
L
DRIVER
V DS
D.U.T
R G
+
-
V DD
I AS
20V
0.01
t p

A

Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS t p I AS
Fig 12a. Unclamped Inductive Test Circuit
V (BR)DSS
t p
I AS
Fig 12b. Unclamped Inductive Waveforms Q G V GS Q GS Q GD V G
Fig 12b. Unclamped Inductive Waveforms
Q G
V GS
Q GS
Q GD
V G
Charge

Fig 13a. Basic Gate Charge Waveform

Q GS Q GD V G Charge Fig 13a. Basic Gate Charge Waveform 600 I D
600 I D TOP 53A 92A BOTTOM 130A 450 300 150 0 25 50 75
600
I
D
TOP
53A
92A
BOTTOM
130A
450
300
150
0
25
50
75
100
125
150
175
Starting T , Junction Temperature (
° C)
J
E
, Single Pulse Avalanche Energy (mJ)
AS

Fig 12c. Maximum Avalanche Energy Vs. Drain Current

Current Regulator Same Type as D.U.T. 50K .2 F 12V .3 F + V DS
Current Regulator
Same Type as D.U.T.
50K
.2 F
12V
.3 F
+
V DS
D.U.T.
-
V
GS
3mA
I
I
G
D
Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

V GS IRFP064V Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations D.U.T* ∑

V GS

IRFP064V

Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations D.U.T* ∑ Low Stray Inductance
Peak Diode Recovery dv/dt Test Circuit
+ Circuit Layout Considerations
D.U.T*
∑ Low Stray Inductance
∑ Ground Plane
∑ Low Leakage Inductance
Current Transformer
-
+
-
+
-
R G
∑ dv/dt controlled by R G
+
∑ I SD controlled by Duty Factor "D"
V DD
-
∑ D.U.T. - Device Under Test

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive P.W. Period D = P.W. Period [ V =10V ] *** GS
Driver Gate Drive
P.W.
Period
D =
P.W.
Period
[
V
=10V
] ***
GS
D.U.T. I SD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V DS Waveform
Diode Recovery
dv/dt
[
V
]
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
[
I
]
Ripple
5%
SD

*** V GS = 5.0V for Logic Level and 3V Drive Devices

Fig 14. For N-channel HEXFET ® power MOSFETs

IRFP064V

IRFP064V TO-247AC Package Outline Dimensions are shown in millimeters (inches) 3.65 (.143) - D - 15.90

TO-247AC Package Outline

Dimensions are shown in millimeters (inches)

3.65 (.143) - D - 15.90 (.626) 3.55 (.140) 4.70 15.30 (.602) 0.25 (.010) M
3.65
(.143)
- D
-
15.90
(.626)
3.55
(.140)
4.70
15.30
(.602)
0.25
(.010)
M
D
B
M
- B -
2.50
(.089)
- A -
1.50
(.059)
5.50 (.217)
4
20.30
(.800)
19.70
(.775)
5.50
(.217)
2X
4.50
(.177)
1
2
3
- C -
14.80
(.583)
4.30
(.170)
14.20
(.559)
3.70
(.145)
2.40
(.094)
1.40
(.056)
2.00
(.079)
3X
1.00
(.039)
0.40
2X
0.25 (.010)
(.102)
M
C
A
2.60
S
5.45
(.215)
2.20
(.087)
3.40
(.133)
2X
3.00
(.118)

5.30 (.209)

(.185)

NOTES:

1 DIMENSIO NING & TO LER AN CING

PER ANSI Y14.5M , 1982.

2 CONTR OLLING DIMENSIO N : INCH.

3 CONFORMS TO JEDEC OUTLINE

TO-247-AC .

LEAD AS SIGN MENTS

1 - GATE

2 - DRAIN

3 - SOURCE

4 - DRAIN

3X 0.80 (.031)

(.016)

TO-247AC Part Marking Information

EXAMPLE :

THIS IS AN IRFPE30 W ITH ASSEMBLY LOT CODE 3A1Q

IRFPE30 3A1Q 9302
IRFPE30
3A1Q
9302

INTERNATIONAL

RECTIFIER

LOGO

ASSEMBLY

LOT

CODE

A

PART NUMBER

DATE CODE

(YYWW )

YY

W W

=

YEAR

WEEK

Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR’s Web site.

Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 3/01

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