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2SK3569

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI)

2SK3569
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 0.54 (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm

Absolute Maximum Ratings (Ta = 25C)


Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 30 10 40 45 363 10 4.5 150 -55~150 A W mJ A mJ C C Unit V V V
1: Gate 2: Drain 3: Source

Pulse (t = 1 ms) (Note 1)

Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range

JEDEC JEITA TOSHIBA

SC-67 2-10U1B

Weight : 1.7 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.78 62.5 Unit C/W C/W 1

Note 1: Ensure that the channel temperature does not exceed 150. Note 2: VDD = 90 V, Tch = 25C(initial), L = 6.36 mH, IAR = 10 A, RG = 25 Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution.
3

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2SK3569
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge tf toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 10 A Duty < 1%, tw = 10 s = Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ton 10 V VGS 0V 50 ID = 5 A VOUT VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 5 A VDS = 10 V, ID = 5 A Min 30 600 2.0 0.7 Typ. 0.54 8.5 1500 15 180 22 50 36 180 42 23 19 Max 10 100 4.0 0.75 pF Unit A V A V V S


ns

RL = 40 VDD 200 V


nC

Source-Drain Ratings and Characteristics (Ta = 25C)


Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 10 A, VGS = 0 V IDR = 10 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 1300 16 Max 10 40 1.7 Unit A A V ns C

Marking

K3569

Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.

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2SK3569

ID VDS
10 COMMON SOURCE Tc = 25C PULSE TEST 10,8 6 4.6 4 4.4 2 4.2 6 5.3 20 10 5.1 5 4.8

ID VDS
8 6 16 5.5 5.25 12 5 8 4.75 4.5 VGS = 4 V 0 0 COMMON SOURCE Tc = 25C PULSE TEST

(A)

DRAIN CURRENT ID

DRAIN CURRENT ID

(A)

VGS = 4V 0 0 2 4 6 8 10 10 20 30

40

50

DRAIN-SOURCE VOLTAGE

VDS

(V)

DRAIN-SOURCE VOLTAGE

VDS

(V)

ID VGS VDS (V)


20 COMMON SOURCE 10

VDS VGS
COMMON SOURCE Tc = 25 8 PULSE TEST

(A)

16

VDS = 20 V PULSE TEST

DRAIN CURRENT ID

12

DRAIN-SOURCE VOLTAGE

ID = 10 A

8 Tc = 55C 4 100 25 0 0 2 4 6 8 10

5 2.5

0 0

12

16

20

GATE-SOURCE VOLTAGE

VGS

(V)

GATE-SOURCE VOLTAGE

VGS

(V)

Yfs ID FORWARD TRANSFER ADMITTANCE Yfs (S)


100 10

RDS (ON) ID DRAIN-SOURCE ON RESISTANCE RDS (ON) ()


COMMON SOURCE Tc = 25C PULSE TEST

10

Tc = 55C 25 100

VGS = 10 V15V

1 COMMON SOURCE VDS = 20 V 0.1 0.1 PULSE TEST 1 10 100

0.1 0.1

10

100

DRAIN CURRENT ID

(A)

DRAIN CURRENT ID

(A)

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2SK3569

RDS (ON) Tc
2.5 100

IDR VDS DRAIN REVERSE CURRENT IDR (A)


COMMON SOURCE Tc = 25C PULSE TEST 10

DRAIN-SOURCE ON RESISTANCE RDS (ON) ( )

COMMON SOURCE PULSE TEST 2.0 ID = 10A 1.5 5A 1.0 VGS = 10 V 0.5 2.5A

1 10 5 3 1 0.1 0 0.2 0.4 0.6 VGS = 0, 1 V 0.8 1.0 1.2

0 80

40

40

80

120

160

CASE TEMPERATURE

Tc

(C)

DRAIN-SOURCE VOLTAGE

VDS

(V)

CAPACITANCE VDS
10000 Ciss 5

Vth Tc

GATE THRESHOLD VOLTAGE Vth (V)

(pF)

1000 Coss 100

CAPACITANCE

2 COMMON SOURCE 1 VDS = 10 V ID = 1 mA PULSE TEST 0 80 40 0 40 80 120 160

Crss 10 COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25C 1 0.1 1 10 100

DRAIN-SOURCE VOLTAGE

VDS

(V)

CASE TEMPERATURE

Tc

(C)

PD Tc VDS (V)
80 500

DYNAMIC INPUT / OUTPUT CHARACTERISTICS (V) GATE-SOURCE VOLTAGE VGS


20

DRAIN POWER DISSIPATION PD (W)

400

VDS

16

60

DRAIN-SOURCE VOLTAGE

300 VDD = 100 V 200 Common source 100 VGS 200 ID = 10 A Tc = 25C Pulse test 0 0 400

12

40

20

0 0

40

80

120

160

200

10

20

30

40

50

0 60

CASE TEMPERATURE

Tc

(C)

TOTAL GATE CHARGE

Qg

(nC)

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2SK3569

rth tw NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c)


10

Duty=0.5 0.2

0.1

0.1 0.05 0.02 PDM t

0.01 0.01 SINGLE PULSE

T Duty = t/T Rth (ch-c) = 2.78C/W 10 100 1 10

0.001 10

100

PULSE WIDTH

tw (s)

SAFE OPERATING AREA


100 ID max (PULSED) * 100 s * ID max (CONTINUOUS) * 400 500

EAS Tch

10

AVALANCHE ENERGY EAS (mJ)

(A)

300

DRAIN CURRENT ID

1 ms * DC OPERATION Tc = 25C

200

100

0.1

SINGLE NONREPETITIVE PULSE Tc=25 CURVES LINEARLY MUST WITH BE DERATED IN

0 25

50

75

100

125

150

CHANNEL TEMPERATURE (INITIAL) Tch (C)


VDSS max 100 1000

INCREASE

0.01 1

TEMPERATURE.

10

15 V 15 V

BVDSS IAR VDD VDS

DRAIN-SOURCE VOLTAGE

VDS

(V)

TEST CIRCUIT RG = 25 VDD = 90 V, L = 6.36mH

WAVE FORM

AS =

1 B VDSS L I2 B 2 VDSS VDD

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2SK3569

RESTRICTIONS ON PRODUCT USE


The information contained herein is subject to change without notice.

20070701-EN

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customers own risk. The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.

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