Lab Report #1

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02/14/2012

Lab Report #1 Diode Characteristic Nguyen Tran CETT 1429 02/14/2012

Lab Report #1

[Type text]

02/14/2012

Table of Content:
1. Objective: 2. Background/Theory 3. Procedures: 4. Result Evaluation: 5. Circuit Simulation: 6. Conclusion: 7. References . .2 ..2 .3 ..7 8 .9

Lab Report #1

[Type text]

02/14/2012

Object: In this lab exercise we will study the characteristics of a general purpose semiconductor diode (1N914), under both forwards biased and reversed conditions. In each case we will plot a graph of diode current against diode voltage. These two graphs are the forward and reverse characteristic curves of the diode. Background/ theory:
A semiconductor diodes behavior in a circuit is given by its currentvoltage characteristic. The shape of the curve is determined by the transport of charge carriers through the so-called depletion layer ordepletion region that exists at the pn junction between differing semiconductors. If an external voltage is placed across the diode with the same polarity as the built-in potential, the depletion zone continues to act as an insulator, preventing any significant electric current flow (unless electron/hole pairs are actively being created in the junction by, for instance, light. see photodiode). This is the reverse bias phenomenon. However, if the polarity of the external voltage opposes the built-in potential, recombination can once again proceed, resulting in substantial electric current through the pn junction (i.e. substantial numbers of electrons and holes recombine at the junction). For silicon diodes, the built-in potential is approximately 0.7 V (0.3 V for Germanium and 0.2 V for Schottky). Thus, if an external current is passed through the diode, about 0.7 V will be developed across the diode such that the Pdoped region is positive with respect to the N-doped region and the diode is said to be "turned on" as it has a forward bias. A diodes IV characteristic can be approximated by four regions of operation. At very large reverse bias, beyond the peak inverse voltage or PIV, a process called reverse breakdown occurs that causes a large increase in current (i.e., a large number of electrons and holes are created at, and move away from the pn junction) that usually damages the device permanently. Also, following the end of forward conduction in any diode, there is reverse current for a short time. The device does not attain its full blocking capability until the reverse current ceases. The second region, at reverse biases more positive than the PIV, has only a very small reverse saturation current. In the reverse bias region for a normal PN rectifier diode, the current through the device is very low (in the A range). However, this is temperature dependent, and at sufficiently high temperatures, a substantial amount of reverse current can be observed (mA or more). The third region is forward but small bias, where only a small forward current is conducted. At higher currents the forward voltage drop of the diode increases. A drop of 1 V to 1.5 V is typical at full rated current for power diodes.

Lab Report #1

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02/14/2012

Procedures: Forward characteristic: Determine the DC current through the diode for each of a series of forward DC voltages. With the voltmeter connected across the diode, adjust the power supply voltage until the meter reads the required value given in Table 1 as Nominal VD. We will find it difficult to obtain the exact value indicated, so adjust as close as possible, and record the Actual VD read by the meter. Move the voltmeter to measure the voltage across the series resistor R, and record the value. Calculate the voltages. With the voltmeter connected acress the power supply adjust the total voltage e diode current using VR and Ohms Law. Repeat for each target voltage for VD. Reverse characteristic: Determine the leakage or reverse current though the total voltage to the values indicated in table 2 as nominal VT. Move the voltmeter leads to measure the voltage across the series resistor R, and record the value. Calculate the voltage across the diode by subtraction, VD=VT-VR. Calculate the reverse current using VR and Ohms law. This procedure is slightly different from that for the forward characteristic for the following reasons. Firstly, when the diode is reverse biased, it exhibits a very high resistance, and a direct measurement of diode voltage would be inaccurate because of voltmeter loading. The voltmeter has an internal resistance of 10M , and the reverse biased diode much greater than that. We must, therefore, determine the diode voltage indirectly, by subtracting the resistor voltage from the total voltage. Secondly, the calculation of diode leakage current must account for the resistance of the voltmeter in the circuit. The Ohms law calculation for leakage current must use the parallel resistance of the 1M resistor and the 10M voltmeter resistance.

Lab Report #1

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02/14/2012

1. Forward characteristic curve: Circuit 1.

XMM2 R1 330 XMM1 V1 12 V D1 1N914 XMM3

Table 1: Measured data for forward characteristic:

Nominal VD(V) 0.00000 0.40000 0.45000 0.50000 0.55000 0.60000 0.65000 0.70000 0.75000 0.80000

Actual VD(V) 0.01173 0.39700 0.45300 0.50200 0.55030 0.60140 0.65100 0.70010 0.75020 0.80050

VR(V) 0.00000 0.00322 0.00985 0.02782 0.07355 0.20060 0.52900 1.33610 3.20100 6.93600

ID(mA) 0.00000 0.00967 0.02985 0.08430 0.22290 0.60780 1.60300 4.40900 9.70000 21.02000

Graph3:

Lab Report #1

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02/14/2012

Actual VD(V)
25.00000

20.00000

15.00000 Actual VD(V)

10.00000

5.00000

0.00000 0.00000 0.20000 0.40000 0.60000 0.80000 1.00000

2. Reverse characteristic curve: Circuit 2.

XMM2 R1 1.00M XMM1 V1 12 V

D1 1N914

XMM3

Table 2: Measured data for reverse characteristic:

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02/14/2012

Nominal VT (V)

Actual VT (V)

VR (V)

VD (V)

ID ( A)

0.00000 5.00000 10.00000 15.00000 20.00000

0.00130 5.01700 10.06600 15.00100 20.00300

0.00300 0.00575 0.00750 0.00900 0.01000

0.04800 5.01125 10.05850 14.99200 19.99270

0.00000 0.00575 0.00750 0.00900 0.01035

Graph2: ID against VD

ID( A)
0.00000 -0.01200 -0.01000 -0.00800 -0.00600 -0.00400 -0.00200 0.00000 -5.00000

-10.00000 ID( A) -15.00000

-20.00000

-25.00000

Result Evaluation: a. Refer to the data sheet for the 1N914 diode. For a forward current of 10.0 mA, compare the forward voltage given in the datasheet with that from your graph of measured data. Table3. Forward voltage values at ID = 10.0 mA.

Lab Report #1

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02/14/2012

ID = 10.0 mA Measured value Data sheet maximum value

Forward voltage VD(V) 0.7502 1

b. Refer to the data sheet for the 1N914 diode. For a reverse voltage of 20.0 V, compare the reverse current given in the data sheet with that from your measured data. Table4. Reverse current values at VD = -20.0 V.

VD = -20.0 V Measured value Data sheet maximum value

Reverse current ID (mA) 10.35 25