BC237/238/239

BC237/238/239
Switching and Amplifier Applications
Low Noise: BC239

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol VCES VCEO VEBO IC PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature : BC237 : BC238/239 : BC237 : BC238/239 : BC237 : BC238/239

TO-92

1. Collector 2. Base 3. Emitter

Value 50 30 45 25 6 5 100 500 150 -55 ~ 150

Units V V V V V V mA mW C C

Electrical Characteristics Ta=25C unless otherwise noted

Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC237 : BC238/239 Emitter Base Breakdown Voltage : BC237 : BC238/239 Collector Cut-off Current : BC237 : BC238/239 DC Current Gain Collector-Emitter Saturation Voltage Collector-Base Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Input Base Capacitance Noise Figure : BC237/238 : BC239 : BC239 Test Condition IC=2mA, IB=0 Min. 45 25 6 5 0.2 0.2 120 0.07 0.2 0.73 0.87 0.55 150 0.62 85 250 3.5 8 2 10 4 4 6 15 15 800 0.2 0.6 0.83 1.05 0.7 V V V V V MHz MHz pF pF dB dB dB Typ. Max. Units V V V V nA nA

BVEBO

IE=1A, IC=0

ICES

VCE=50V, VBE=0 VCE=30V, VBE=0 VCE=5V, IC=2mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA VCE=5V, IC=2mA VCE=3V, IC=0.5mA, f=100MHz VCE=5V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1MHz VEB=0.5V, IC=0, f=1MHz VCE=5V, IC=0.2mA, f=1KHz RG=2K VCE=5V, IC=0.2mA RG=2K, f=30~15KHz

hFE VCE (sat) VBE (sat) VBE (on) fT Cob Cib NF

hFE Classification
Classification hFE
2002 Fairchild Semiconductor Corporation

A 120 ~ 220

B 180 ~ 460

C 380 ~ 800
Rev. A2, August 2002

BC237/238/239

Typical Characteristics

100

100

80

IB = 350A IB = 300A IB = 250A IB = 200A

IC[mA], COLLECTOR CURRENT

IC[mA], COLLECTOR CURRENT

IB = 400A

VCE = 5V

10

60

40

IB = 150A IB = 100A

20

IB = 50A
0 0 2 4 6 8 10 12 14 16 18 20
0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2

VCE[V], COLLECTOR-EMITTER VOLTAGE

VBE[V], BASE-EMITTER VOLTAGE

Figure 1. Static Characteristic

Figure 2. Transfer Characteristic

VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE

10000

VCE = 5V
1000

IC = 10 IB

hFE, DC CURRENT GAIN

1000

V BE(sat)

100

100

10

V CE(sat)

1 1 10 100 1000

10 1 10 100 1000

IC[mA], COLLECTOR CURRENT

IC[mA], COLLECTOR CURRENT

Figure 3. DC current Gain

Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage

100

1000

fT, CURRENT GAIN-BANDWIDTH PRODUCT

Cob[pF], CAPACITANCE

f=1MHz IE = 0
10

VCE = 5V

100

10

0.1 1 10 100 1000

1 0.1

10

100

VCB[V], COLLECTOR-BASE VOLTAGE

IC[mA], COLLECTOR CURRENT

Figure 5. Output Capacitance

Figure 6. Current Gain Bandwidth Product

2002 Fairchild Semiconductor Corporation

Rev. A2, August 2002

BC237/238/239

Package Dimensions

TO-92
4.58 0.15
+0.25

0.46

14.47 0.40

0.10

4.58 0.20

1.27TYP [1.27 0.20] 3.60

0.20

1.27TYP [1.27 0.20]

0.38 0.05

+0.10

3.86MAX

1.02 0.10

0.38 0.05

+0.10

(R2.29)

(0.25)

Dimensions in Millimeters
2002 Fairchild Semiconductor Corporation Rev. A2, August 2002

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PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Preliminary

No Identification Needed

Full Production

Obsolete

Not In Production

2002 Fairchild Semiconductor Corporation

Rev. I1

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