386

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL.

strates apply,

a) are accurate associated

to within with

&

8 percent, section

b) are simple of microstrip.

to the

c) are not wasteful

of material, a specific

and d) can determine

permittivity

ReferenCeS

[1] B, W. .lerws, R. M.
microstrip IEEE/ May [2] 1980. transmission MTT-S Int.

Pannell, tines Mtcrowaoe

and with

J. A. very

H.

Steeden,

Attenuation in paper D.C.), strips

in 1980 V-8,

DIELECTRIC SUBS TRATEkr)

10SSY

substrates,

Symp.

(Washington of parallel 77reoty IEEE

H. A. Wheeler, by a dielectric pp. 172 185, Tech., ton, and

Transmission-line sheetj IEEE Trans.

properties M~crowaoe model, Jan. in ring Electron.

separated 13,

m
Wsw
L

MTT-29,

NO.

4, APRIL

1981

\GRouND

p~~~~

MICROSTRIP

COUPLER (a)

Tech., vol. MT1Trans. Mtcrowaoe

Mar. 1965.
Microstrip vol. MTT-21, Measurement N. on Knopplk, microstrip An pp. accurate of 2 IO-216, dispersion pp. 34-39, technique Mrcrostrip lines, 1973 microstrip, resonator Left., method vol. for lines, Electron. and 7. Lert.,

[3] [4] [5]

W. J. Getsinger,
Theory
VO].

P. Trough I. Wolf

5, No. 2, pp. 2526, 1969.

dmpersion no.

measurement 779-781, [6] J. G, fourth [7] B. IEEE 1975, [8] J. S. Napoli important Easter, 1971. IUchings, quarter,

26, pp.
the Reu., Fig, 1. (a)

EVEN

MODE ELECTRIC FIELD DISTRIBUTION (b)

ODD MOOE

experimental 1974. cmcuit of some vol. simple

determining Marcom

properties The

microstrip

transmission

Schematic m even-

diagram and

of

a microstnp excitation

coupler. of the

(b)

Electric

field coupled

eqmvalent

microstrip MTT-23, technique constant Theo~ to pp.

dlscontmuitles, 655-660, the Aug. accurate m19,

distribution lines

odd-mode

microstrip

Trans.

Mzcrowaue and

Theory

Tech., A

J. J, Hughes, the microwave IEEE Trans.

for

determination of integrated circuits, pp. [9] J. 664-665, Q. Howell, Theory hdy A Tech.,

dielectric Mzcrowave method

for microwave Tech , vol. MTTthe

1971.
qnick, vol. M. accurate pp. measure IEEE 1973. Coupling IEEE 1973. in Proc. Sept. design, Germany), Aug. errors Trans. dielectric Mzcrointegrated MTT-21, Potok, H. N, vol. circuit and on for pp. substrates, 142 143, Mar. E. H. MIC pp. England, dielectrics, 560-562, cmcuit (Hamburg, Trans.

ters of the substrates. design of coupled substrates. These should

The relations be particularly

permit

ready

application

in

systems realized

on dielectric

or ferromagnetic forms.

constant waoe [10] in [11] E,

of microwave

useful in the optimization mathematical

P, H, Ladbrooke, cawty-resonance Therny 0, Hammerstad, Microwave European 1975

process in CAD
II.

because of the simple

measurements Tech., MfT-21, Equations Conf.

FORMULATION

OF THX EMPIRICAL

llELATIONS

microstrip

Microwave

268 272,

A schematic
acterized The

diagram

of a coupled

line

on a substrate permeability fringe through

charp, is fields.

by relative

perrnittivit field

y c, and relative is basically determines

shown in Fig. 1(a). The coupling extent of the fringe coefficients.

the electric

and mag-

Empirical Relations for Capacitive and Inductive Coupling Coefficients of Coupled Microstrip Lines
S. KAL, D. BHATTACHARYA,
AND

N. B. CHAKRABORTI

,4 bstracf coefficients physical coefficients velocities,

Empirical

relations of coupling from even-

for

inductive

and lines.

capacitive Values with

coupling

are proposed. mechanism computed available

The functional

relationships

are based on the of coupling and phase

in microsfiip

and odd-mode are compared couplers

impedances

The field solution of this type of structure outside the region bounded by the top electrode exhibits an exponentially decaying character [7]. The coupling coefficients are thus expected to vary exponentially with the characteristic dimensional ratio (5/H). The results given in Milligan [8] of variation of mutual and self-capacitances can be used to show and S/27. It is that their ratio varies exponentially with W/H also noticed that the variation of capacitive coupling coefficient
netic coupling
kc

in the literature, relations. Micros@ip

those computed and isolation.

with

~/~

is faster than with that with

W/H.

The

results of Bryant constant it is rather a knowledge with that

and the

from the proposed basis of coupling

have been designed on the

Weiss variation

[2] indicate

for low values c, is rapid

of dielectric while from

coefficients L

to meet the desired coupling INTRODUCTION

of coupling

slow for of evenis a relative inductive rela-

high values of c,. Characteristic Microstrip their constants no simple in mulated inductive tunately, This coupled lines are conventionally characteristic capacitances from characterized a knowledge by of and odd-mode computed dielectric coupling depend
as kc=0.55exp[(AIS/H+ kl=0.55exp[ A,, B, are functions -(,42

impedances and inductances; of

and phase velocities the inductance

in even and odd modes may be found capacitances the of unity impedances and phase there are involved be forand from capacitance [4].
k ~, should

even- and odd-mode

a medium suggests

[ 1] [3]. These may be computed relations An making coupling available alternative use of the coefficients for finding approach knowledge in coupled formulas simple

constant coefficient

This

the even- and odd-mode the design.

[2], [4]. However, the parameters to design of the lines may

be independent
kc and k~ may

of c, and should
now be written

on p,. Incorporating

the above ideas the empirical

tions for the coupling

coefficients

capacitive

[5], [6]. Unfordescribcoeffiparame-

B, W/H)] S/H+ B,W/H)]. of p,: .

here again straightforward paper aims at finding dimensions of both capacitive

are not available. relations coupling

(1) (2)

empirical

ing the variation

and inductive

of c, and

A ~, B2 are functions

cients with physicaf

of the lines and material

Manuscr]pt The India authors mumcation

received are with Engmeermg,

August the Indian

26,

1980; Institute

revised of of

December

1, 1980. and Electrical Com721302, Kharagpur

Department

Electronics Technology,

001 8-9480/8

1/0400-0386$00.75

Q 1981

IEEE

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,

VOL.

MTT-29,

NO,

4, APRIL

198]

387

TABLE I COMPARISON FTHEVALUESOF kc O

AND k~ OBTAINED

FROM

TABLE II PERFORMANCE OFTESTCOUPLERS T THECENTER A FREOUENCY

CASE A Alum$na subsirate W/H .0836 CASE (~,g 61 substrate W/H=0714 p, :03.97at
W.* Dew .01,

EMPIRICAL RELATIONS WITH THOSECOMPUTED USING (4) AND (5) FROM THE RESULTS IN REFERENCES CITED

B (=,,15 4 ) S/H=0620

w
I 100 *lo o 100 100 100 100 160 160 160
q *16 O

YIG(Trans Tech G1131

$,s,11s ,Om qf,rm..s

lb

S/H.0L02

~=2000Glw
Expdm.t.l .!,

kc 0..49
.0[MO19.X&t Itw.t,cd .1. Ewtmenl.al

02 of. 08 10 115 20 OL 06 0.9 11 01 02 04 06 10 0360 O 785 228 of

02 02 02 02 02 02 02 04 02 08 02 02 06 O& 06 0 12C 0301 005

0386 0363 0317 0.296 0251 0213 0348 0238 0286 0107 0388 0373 0186 0233 0 lLS 0408 0272 0337 for

0437 0425 0402 0391 O 364 0339 0 42S 0338 0.369 0 211 0 LLL o.f,37 O 28L 0338 0262 0463 0363 0380 same

0386 0367 0313 0.289 0240 0206 0359 0252 0303 0103 0370 O 361 0180 0236 0141 0366 0233 0303

041.8 0443 0 Los 0 3S2 0355 0325 0.440 0348 0408 0211 0 L26 0 u? 0280 0334 0252 0474 0376 0375 rot,o but [31 [11 [91 [91 h p,,,,icln
S.d .,, Isobmon

[21

COuplmg [n fjB

,,

1098

1030

13

1330

In dE

23

2370

2350

20

2350

VSWR

1 05

1, 56

,.w.aN.an, (36).(381

.f

,,1,,,.,,

[61

160 104 10.L 2 5L S,SS Values

3PSZI
Lo, ,

kC and kL

d,mens!ona[

The numerical coefficients have been chosen such that the resulting values of kc and k ~ agree with those computed from the even- and odd-mode characteristic impedances ( ZO, and ZOO)and phase velocities (BO= and /?OO)quoted by other authors. Values of kc and k~ can be obtained using relations reference [5] and are given by kc=
Zoeifoo zooPoe
OCBOCJ zOo POe

(22) and (28) of

z ~ ? ~ ~
u

10
o2
1

---------------

7 L 5 6 FREQUENCV ( GHz ) THEORETICAL ---EXPERlt.fENTAL 3 of and a test dotted microstnp lines indicate coupler on akunma and subexperi-

(4)
Fig. 2. Measured (C, =9.6). values, performance The solid respectively. strate theoretical mental

(5)

substrates p, is unity but for magnetic substrates p, changes with magnetic field and the variation of k~ with applied magnetic field can be computed using (2) and (3).
For dielectric

III.

NUMERICAL

WSULTS

AND ILLUSTRATIVE DESIGN

Table I presents the values of kc and k. computed using (4) and (5) along with those obtained using empiricaf relations (1) and (2). An asterisk in the Table I is intended to compare the kc and k ~, values for the same dimensional ratio but different c,. It may be noted tion of c, while that kl. remains substantially constant (within
1

with

varia(1) with
kc

kc changes with

c,. The empirical

relations 5 percent)

and (2) are found available

values of

to be in good agreement entries. Unfortunately,

results for S/H> last three results

0.05 and W/H>O.

except for the

small values

for

of

W/H

and S/H,

of even- and odd-mode no comparison to S/H=

phase velocities can be made. The

are not available value of coupling

and therefore corresponding

0.05 and W/H= 0.1 is 0.534 for alumina substrate (c, =9.6). For tighter coupling (S/H may degrade as then the assumption of ex<0.05) accuracy
ponential
A.

variation

may not be valid.

and (2). The performance of a of the empiricaf relations (1) microstrip coupler expressed in terms of coupling, directivity, and VSWR are related to kc, kl,, and 00 (electrical length of the coupled region at center frequency) through the relations given in equations (44) (46) of reference [6]. I) Case ,4: For a 25-roil thickness alumina substrate (c, = 9.6), the values of kc and k{, needed for a 1l-dB coupler with 23-dB isolation at a center frequency of 5.5 GHz are 0.237 and 0.327, respectively. Using the empirical relations (1) (3), the values for W/H and S/H are found to be 0.836 and 0.402, respectively. ratio of the uncoupled region corresponds to charThe W/H acteristic impedance of 50 Q. It is observed that the value of characteristic impedance of the coupled region calculated by using the approximate formula Z. = ~is about 52 ~. The experimentally observed VSWR is found to be less than 1.3 over the frequency range 2 7 GHz. The coupling, isolation, etc., are compared in Table II with the experimentally obtained data at the center frequency. 2) Case B; For a 25-roil thickness YIG (Trans Tech G1 13) substrate (t, = 15.4, saturation magnetization= 1780 G), the values of kc and k[, needed for a 13-dB coupler with 20-dB isolation

Illustrative

Design

Two designs of microstrip YIG substrate

coupler

realized

on a dielectric to illustrate

and a the use

at a center frequency of 7.0 GHz are 0.160 and 0.288, respectively. The center frequency has been chosen to be well above ~fi, [11] which is about 5 GHz for YIG (Gl 13) substrate. The relative
permeability (p,) is taken to be effective permeability (p.ff )
for

are discussed in this subsection

388

IEEE TRANSACTIONS

ON

MICROWAVE

THEORY

AND

TECHNIQUES,

VOL.

rvrTT-29,

NO.

4, APRIL

1981

iEisl
Lot

simple

method

of designing substrate.

a microstrip

coupler

on a dielectric

or ferromagnetic

ACKNOWLEDGMENT The Radar ment and Thanks authors facilities. C. K. would like to thank Centre, also wish Prof. for G. S. Sanyal, Dr. Head,

and Communication The authors for helpful Maiti

extending in device

the measureS. K. Lahiri fabrication. for

!*
i~
60 Fig ?5 80 70 FREQUENCY (G Hz) THEORETICAL ---EXPERIMENTAL 65 of solid a test and microstnp dotted lines coupler indicate on YIG (Tram applied and

to thank

suggestions work.

are also due to N. C. Chakraborti in the expenmentaf

and P. K. Dasgupta

assistance

REFERENCES

[1]

L, T.

Young G.

and 1974,

H. and vol. and

Sobol, ch. 5, pp. J. A paws MTT-16, vol.

Advances 203-287, of microstnp pp. Weiss,

m Microwaves, ch. 6, pp. of Dec. lines:

vol. microstrrp

8.

New

York:

Academic,

295-318. transmission Mzcrowaoe microstrip IEEE 1968. of coupled Trans.

[2]

Bryant and Tech., RCA

Parameters 1021-1027,

lines Theory

coupled

[3] [4]

L.

S. Napoh

J, J. Hughes,

Characteristics

lines,

3.
Tech, magnetic

Measured G113) field

performance =2000 G). The

31, pp. 479-498, Sept. 1970. J. L Smith, The even and odd mode capacitance parameters for coupled Theo~ Tech., VOL lines in suspended substrate, IEEE Trans. Microwave
Reo., pp. 424-430, and pp. Krage Trans. Cohn, Mdhgan. May Libbey, Dept. Pucel G. May lines, Oct. I Coupled G 1971. Coupled-mode IEEE 1969 Characteristics formulation vol. Tech., MTTof coupled microstrip Imes, Apr. Trans. mode of inhomogeneous 18, pp. line, Ott Tech., 1955. and interdigltal pp. vol. Mfl-25, lines 2 17 222, IRE Trans. analysls Mzcrowaoe of non-uniform Theory Tech., vol. E. Adair I. Haddad,

substrate values, above

(c, = 15.4; respectively. saturation

satrrratlon

magnetization=

1780 G; theoretical

MTT-19,

[5] [6]

experimental magnetization magnetic field

coupled [1].

transmission 746752, and lines-I:

As an

MTT-17, illustrative case, the M, IEEE I 970. K,

Haddad, Theory

is

chosen

to be 2000 G applied

transversely

to the [7] [8]

transmission

plane
netic

of microstnp lines and for this value of the applied magfield pcff of this substrate at 7 GHz is found to be 0.387 [1],

Microwave Shielded Theo~ IEEE 1977. Theory Electrical and Part Theo~ et Truns I: D Tech Dimensions Truns,

S.

B.

coupled-strip , vol. MTT-3, of microstrip Mzcrowuve

transmission pp. 29-38, coupled Theoiy

and S/H for above specifications of the coupler are found to be 0.714 and 0.620, respectively. The experimentally observed values at the centre frequency are compared with the specified values in Table II. Figs. 2 and 3 give the variations of coupling, isolation, and VSWR of these two couplers over the frequency ranges of investigation and indicate close agreement with design values. The small deviation may be due to etching errors during fabrication of the devices using thin film technique. The empincaf relations given here for capacitive and inductive coupling coefficients provide a
[10]. The values of W/H

Mmrowuue T. A. structures, 405-410,

[9]

W.

M.

of active Eng. J.

non-reciprocal Polytechmc

networks, Inst.,

Ph D. disserWorcester, on IEEE pp. Ma,

tation, 1968. [10] R. A.

Worcester

Masse, theory; vol.

Microstrip Part II: pp. parts MTT-20,

propagation Experiment, 304-308 of and

magnetic Tram 309-313, integrated

substrates M[crowaue May [Ii] G. 588, R. 1972.

Design Tech., al.,

Harrison IEEE 1971

Ferromagnetic Microwave Theory,

nricrowave vol MT1-

circuits, July

Tech.,

19, pp.

577-