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S-Parameter
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for Faster, More Accurate Network Design
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H
Test & Measurement
Application Note 95-1
S-Parameter Techniques
Contents
1. Foreword and Introduction
2. Two-Port Network Theory
3. Using S-Parameters
4. Network Calculations with Scattering Parameters
5. Amplifier Design using Scattering Parameters
6. Measurement of S-Parameters
7. Narrow-Band Amplifier Design
8. Broadband Amplifier Design
9. Stability Considerations and the Design of
Reflection Amplifiers and Oscillators
Appendix A. Additional Reading on S-Parameters
Appendix B. Scattering Parameter Relationships
Appendix C. The Software Revolution
Relevant Products, Education and Information
Contacting Hewlett-Packard
© Copyright Hewlett-Packard Company, 1997. 3000 Hanover Street, Palo Alto California, USA.
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Test & Measurement
Application Note 95-1
S-Parameter Techniques
Introduction
Linear networks, or nonlinear networks operating with signals Maxwell’s equations
sufficiently small to cause the networks to respond in a linear All electromagnetic
manner, can be completely characterized by parameters behaviors can ultimately be
measured at the network terminals (ports) without regard to explained by Maxwell’s four
the contents of the networks. Once the parameters of a basic equations:
network have been determined, its behavior in any external ∂B
environment can be predicted, again without regard to the ∇⋅D=ρ ∇×E= −
contents of the network. ∂t
∂D
S-parameters are important in microwave design because they ∇⋅B= 0 ∇ × H = j+
∂t
are easier to measure and work with at high frequencies than
other kinds of parameters. They are conceptually simple, However, it isn’t always
analytically convenient, and capable of providing a great possible or convenient to
insight into a measurement or design problem. use these equations directly.
To show how s-parameters ease microwave design, and how Solving them can be quite
difficult. Efficient design
you can best take advantage of their abilities, this application
requires the use of
note describes s-parameters and flow graphs, and relates them
approximations such
to more familiar concepts such as transducer power gain and as lumped and distributed
voltage gain. Data obtained with a network analyzer is used to models.
illustrate amplifier design.
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Application Note 95-1
S-Parameter Techniques
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Application Note 95-1
S-Parameter Techniques
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Test & Measurement
Application Note 95-1
S-Parameter Techniques
Using S-Parameters
The ease with which scattering parameters can be measured
makes them especially well suited for describing transistors and
other active devices. Measuring most other parameters calls for
the input and output of the device to be successively opened
and short circuited. This can be hard to do, especially at RF
frequencies where lead inductance and capacitance make short
and open circuits difficult to obtain. At
higher frequencies these measurements
typically require tuning stubs, separately
adjusted at each measurement frequency,
to reflect short or open circuit conditions
to the device terminals. Not only is this
inconvenient and tedious, but a tuning
stub shunting the input or output may
cause a transistor to oscillate, making
the measurement invalid.
Using S-Parameters
Another important advantage of s-parameters stems from
the fact that traveling waves, unlike terminal voltages and
currents, do not vary in magnitude at points along a lossless
transmission line. This means that scattering parameters can
be measured on a device located at some distance from the
measurement transducers, provided that the measuring device
and the transducers are connected by low-loss transmission lines.
Derivation
Transmission and Reflection
Generalized scattering parameters have been defined by When light interacts with a
K. Kurokawa [Appendix A]. These parameters describe lens, as in this photograph,
the interrelationships of a new set of variables (ai , bi). part of the light incident on
The variables ai and bi are normalized complex voltage waves the woman's eyeglasses is
incident on and reflected from the ith port of the network. reflected while the rest is
transmitted. The amounts
They are defined in terms of the terminal voltage Vi , the
reflected and transmitted
terminal current I i , and an arbitrary reference impedance Z i , are characterized by optical
where the asterisk denotes the complex conjugate: reflection and transmission
coefficients. Similarly,
V + Zi Ii Vi − Z i* I i scattering parameters are
ai = i (4) bi = (5) measures of reflection and
2 Re Z i 2 Re Z i transmission of voltage
waves through a two-port
9 electrical network.
3
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Test & Measurement
Application Note 95-1
S-Parameter Techniques
Using S-Parameters
For most measurements and calculations it is convenient Scattering parameters
to assume that the reference impedance Zi is positive relationship to optics
and real. For the remainder of this article, then, all Impedance mismatches
variables and parameters will be referenced to a single between successive
positive real impedance, Z0. elements in an RF circuit
relate closely to optics,
The wave functions used to define s-parameters for a where there are successive
two-port network are shown in Fig. 2. differences in the index of
refraction. A material’s
ZS characteristic impedance,
Z0, is inversely related to
a1 a2 the index of refraction, N:
TWO - PORT ZL
VS
b1 NETWORK b2 Z0
ε = 1
377 N
The s-parameters s 11 and
Figure 2 s 22 are the same as optical
Two-port network showing incident waves reflection coefficients;
(a 1 , a 2 ) and reflected waves (b 1 , b 2 ) used in s 12 and s 21 are the same
s-parameter definitions. The flow graph for as optical transmission
this network appears in Figure 3. coefficients.
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Test & Measurement
Application Note 95-1
S-Parameter Techniques
Using S-Parameters
The independent variables a1 and a2 are normalized
incident voltages, as follows:
11
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Test & Measurement
Application Note 95-1
S-Parameter Techniques
Using S-Parameters
The linear equations describing the two-port network are Limitations of
then: lumped models
b 1 = s 11 a 1 + s 12 a 2 At low frequencies most
(10) circuits behave in a
b 2 = s 21 a 1+ s 22 a 2 (11) predictable manner and
can be described by a
The s-parameters s11, s22, s21, and s12 are: group of replaceable,
lumped-equivalent black
b1
s 11= = Input reflection coefficient with (12) boxes. At microwave
a 1 a = 0 the output port terminated by a frequencies, as circuit
2 matched load (Z =Z sets a =0) element size approaches
L 0 2
the wavelengths of the
b2
s 22 = = Output reflection coefficient (13) operating frequencies,
a 2 a = 0 with the input terminated by a such a simplified type
1 matched load (ZS=Z0 sets Vs=0) of model becomes
inaccurate. The physical
b2
s 21 = = Forward transmission (insertion) (14) arrangements of the
a 1 a = 0 gain with the output port circuit components can
2 terminated in a matched load. no longer be treated as
b1 black boxes. We have to
s 12 = = Reverse transmission (insertion) (15) use a distributed circuit
a2 gain with the input port element model and
a 1 =0 terminated in a matched load.
s-parameters.
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Test & Measurement
Application Note 95-1
S-Parameter Techniques
Using S-Parameters
Notice that
V1
− Z0
b1 I1 Z − Z0
s 11 = = = 1 (16)
a1 V1 Z 1 + Z0
+ Z0 S-parameters
I1 S-parameters and
distributed models
(1 + s11 )
and Z1 = Z 0 provide a means of
(1 − s11 ) (17) measuring, describing,
and characterizing
V1 circuit elements when
where Z 1 = is the input impedance at port 1. traditional lumped-
I1 equivalent circuit
models cannot predict
This relationship between reflection coefficient and impedance
circuit behavior to the
is the basis of the Smith Chart transmission-line calculator. desired level of
Consequently, the reflection coefficients s11 and s22 can be accuracy. They are used
plotted on Smith charts, converted directly to impedance, and for the design of many
easily manipulated to determine matching networks for products, such as
optimizing a circuit design. cellular telephones.
13
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Test & Measurement
Application Note 95-1
S-Parameter Techniques
Using S-Parameters
Advantages of S-Parameters
The previous equations show one of the important
advantages of s-parameters, namely that they are
simply gains and reflection coefficients, both
Digital pulses
familiar quantities to engineers.
Digital pulses are
By comparison, some of the y-parameters comprised of high-order
described earlier in this article are not so familiar. harmonic frequencies
For example, the y-parameter corresponding that determine the shape
to insertion gain s21 is the ‘forward of the pulse. A short
trans-admittance’ y21 given by pulse with steep edges
equation 3. Clearly, insertion has a signal spectrum
with relatively high
gain gives by far the
power levels at very high
greater insight into
frequencies. As a result,
the operation of some elements in
the network. modern high-speed
digital circuits require
characterization with
distributed models and
s-parameters for accurate
performance prediction.
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Test & Measurement
Application Note 95-1
S-Parameter
Using S-Parameters
The previous four equations show that s-parameters are
simply related to power gain and mismatch loss,
quantities which are often of more interest
than the corresponding voltage functions:
2 Power reflected from the network input
s11 =
Power incident on the network input
2
s12 = Reverse transducer power gain with Z0 load and source
17
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Test & Measurement
Network Calculations with Application Note 95-1
S-Parameter Techniques
Scattering Parameters
Signal Flow Graphs
References
Scattering parameters turn out to be particularly convenient J. K. Hunton, ‘Analysis of
in many network calculations. This is especially true for power Microwave Measurement
and power gain calculations. The transfer parameters s12 and Techniques by Means of
s21 are a measure of the complex insertion gain, and the Signal Flow Graphs,’
driving point parameters s11 and s22 are a measure of the input IRE Transactions on
and output mismatch loss. As dimensionless expressions of Microwave Theory and
gain and reflection, the s-parameters not only give a clear and Techniques, Vol. MTT-8,
No. 2, March, 1960.
meaningful physical interpretation of the network performance,
but also form a natural set of parameters for use with signal
N. Kuhn, ‘Simplified Signal
flow graphs [See references here and also in Appendix A ].
Flow Graph Analysis,’
Of course, it is not necessary to use signal flow graphs in order Microwave Journal, Vol. 6,
to use s-parameters, but flow graphs make s-parameter No. 11, November, 1963.
calculations extremely simple. Therefore, they are strongly
recommended. Flow graphs will be used in the examples
that follow.
18
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Scattering Parameters
In a signal flow graph, each port is
represented by two nodes. Node an VS Z 0
represents the wave coming into the bS =
ZS + Z 0 a1 b2
device from another device at port n,
and node bn represents the wave 1 s21
leaving the device at port n. The s11 s22 ΓL = ZL - Z0
complex scattering coefficients are ZL + Z 0
then represented as multipliers on ΓS = ZS - Z0
branches connecting the nodes within ZS + Z0
b1 s12 a2
the network and in adjacent
networks. Fig. 3, right, is the flow
graph representation of the system of Fig. 2.
Figure 3
Figure 3 shows that if the load reflection coefficient ΓL is Flow graph for
zero (ZL = Z0) there is only one path connecting b1 to a1 two-port network
(flow graph rules prohibit signal flow against the forward appearing in Figure 2.
direction of a branch arrow). This confirms the definition
of s11:
b1
s11 =
a1 a = Γ b = 0
2 L 2
19
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Scattering Parameters
Better Smith Charts
The simplification of network analysis by flow graphs results On the copyrighted Smith
from the application of the “non-touching loop rule.” This rule Chart, curves of constant
applies a generalized formula to determine the transfer standing wave ratio,
function between any two nodes within a complex system. The constant attenuation, and
non-touching loop rule is explained below. constant reflection
coefficient are all circles
The Nontouching Loop Rule
The nontouching loop rule provides a
∑ Tk ∆ k coaxial with the center of
the diagram. Refinements
T= k to the original form have
∆
simple method for writing the solution of
enhanced its usefulness.
any flow graph by inspection. The solution
In an article published in
T (the ratio of the output variable to the 1944, for example, Smith
input variable) is defined, where: described an improved
Tk = path gain of the kth forward path version and showed how
to use it with either
∆ = 1 – Σ ( all individual loop gains) impedance or admittance
+ Σ ( loop gain products of all possible coordinates. More recent
combinations of 2 nontouching loops) improvements include
– Σ ( loop gain products of all possible double Smith Charts for
combinations of 3 nontouching loops) impedance matching and
+ . . . a scale for calculating
phase distance.
20 ∆k = The value of ∆ not touching the kth forward path.
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( )
S-Parameter Techniques
Scattering Parameters
Transducer Power Gain
Using scattering parameter flow-graphs and the non-touching
loop rule, it is easy to calculate the transducer power gain with an
arbitrary load and source. In the following equations, the load and
source are described by their reflection coefficients ΓL and ΓS,
respectively, referenced to the real characteristic impedance Z0.
Transducer power gain:
Power delivered to the load P
GT = = L
Power available from the source PavS
P L = P( incident on load) − P( reflected from load)
2 2
= b 2 (1 − ΓL )
bS 2
PavS =
2
(
1 − ΓS )
2
b2 2 2
GT = (1 − ΓS )(1 − ΓL )
bS
22
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Scattering Parameters
Using the non-touching loop rule,
b2 s 21
=
bS 1 − s 11ΓS − s 22 ΓL − s 21 s12 ΓL ΓS + s11ΓS s 22 ΓL
s 21 Obtaining maximum
= performance
(1 − s 11ΓS )(1 − s 22 ΓL ) − s 21 s12 ΓL ΓS S-parameters are used
to characterize RF and
2 2 2 microwave components
s 21 (1 − ΓS )(1 − ΓL ) (18) that must operate
GT = together, including
2
(1 − s11ΓS )(1 − s 22 ΓL ) − s 21 s12 ΓL ΓS amplifiers, transmission
lines, and antennas (and
Two other parameters of interest are: free space). Because
s-parameters allow the
1) Input reflection coefficient with the output interactions between
termination arbitrary and Zs = Z0. such components to be
simply predicted and
b1 s (1 − s 22 ΓL ) + s 21 s12 ΓL calculated, they make it
′ =
s11 = 11 possible to maximize
a1 1 − s 22 ΓL (19) performance in areas
s s Γ such as power transfer,
= s11 + 21 12 L
1 − s 22 ΓL directivity, and
23 frequency response.
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Scattering Parameters
2) Voltage gain with arbitrary source
and load impedances
V2
AV = V1 = ( a 1 + b 1 ) Z 0 = Vi 1 + Vr 1
V1
V2 = ( a 2 + b 2 ) Z 0 = Vi 2 + Vr 2
Waveguides
a 2 = ΓL b 2
A radar system delivers a
b 1 = s11
′ a1 large amount of energy
from a microwave (µW)
(20) source to the transmitting
b (1 + ΓL ) s 21(1 + ΓL )
AV = 2 = antenna. The high field
′ ) (1 − s 22 ΓL )(1 + s11
a 1(1 + s11 ′ ) strengths cause short
circuits in standard wires,
Appendix B contains formulas for calculating many often-used cabling, and coax, so
waveguides are used.
network functions (power gains, driving point characteristics,
These hollow metal tube
etc.) in terms of scattering parameters. Also included are constructions conduct µW
conversion formulas between s-parameters and h-, y-, and energy much like a
z-parameters, which are other parameter sets used very often plumbing system. In the
for specifying transistors at lower frequencies. design of waveguides, we
can test for signal reflec-
tions and transmission
24 quality with s-parameters.
5
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Test & Measurement
Application Note 95-1
S-Parameter Techniques
Amplifier Design
Traveling wave amplifier
Using Scattering Parameters
S-parameters are extensively
The remainder of this application note will show with several used for designing RF/µW
examples how s-parameters are used in the design of transistor circuits such as the HP TC702
amplifiers and oscillators. To keep the discussion from becoming distributed traveling wave
bogged down in extraneous details, the emphasis in these amplifier (TWA) enlarged
examples will be on s-parameter design methods, in the photograph below.
and mathematical manipulations will The frequency-dependent
be omitted wherever possible. impedances (or dispersion)
in this integrated circuit can
The HP 83017A microwave not be modeled by lumped-
system amplifier achieves equivalent circuit elements,
0.5–26.5 GHz bandwidth by but s-parameters can
incorporating the HP TC702 accurately characterize the
GaAs MESFET TWA IC. amplifier's response.
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S-Parameters
Most design problems will begin with a 1700 MHz
tentative selection of a device and the
measurement of its s-parameters.
Figures 4a – 4e, which appear to the
right and on the next two pages, are a
set of oscillograms showing complete
s-parameter data btween 100 MHz and
1.7 GHz for a 2N3478 transistor in the
common-emitter configuration.
These graphs are the results of swept- S11
frequency measurements made with the
classic HP 8410A microwave network
analyzer. They were originally published
as part of the 1967 HP Journal article. 100 MHz
Measurements made with a modern
Figure 4a
network analyzer are presented at the
end of this section. While the s 11 of a 2N3478 transistor measured with the
measurement tools have changed over classic HP 8410A network analyzer. Outermost
the past 30 years, the basic circle on Smith Chart overlay corresponds to
measurement techniques have not. | s 11 | = 1. The movement of s 11 with frequency
is approximately along circles of constant
resistance, indicative of series capacitance and
26 inductance.
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S-Parameters
|S12|
100 MHz 10 dB/cm –30
dB
S12 –110°
S22 50°/cm
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S-Parameters
|S21|
10 dB/cm 0 dB 0 dB
|S21|
10 dB/cm
S21 S21
+ 20° 50°/cm + 90°
50°/ cm
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S-Parameters
Figure 4f
In Fig. 4f, the magnitude of s21 from Fig. 4d is
Top curve: | s 21 | from Fig. 4 is replotted
replotted on a logarithmic frequency scale, on a logarithmic frequency scale. Data
along with additional data on s21 below below 100 MHz was measured with an
100 MHz, measured with a vector voltmeter. HP 8405A vector voltmeter. The bottom
The magnitude of s21 is essentially constant curve u, the unilateral figure of merit,
to 125 MHz, and then it rolls off at a slope of calculated from s-parameters.
6 dB/octave.
Magnitude
By adjusting a calibrated line 10 3.162
stretcher in the network 0 1
analyzer, a compensating linear
phase shift was introduced, and – 10 .3162
the phase curve of Fig. 4e – 20 .1
resulted. To go from the phase
– 30
u .03162
curve of Fig. 4d to that of Fig.4e
required 3.35 cm of line, that
is equivalent to a pure time 10 MHz 100 MHz 1 GHz 10 GHz
delay of 112 picoseconds.
Frequency
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S-Parameters
After removal of the constant-delay, or linear-phase, Importance of simple
component, the phase angle of s21 for this transistor (Fig. 4e) approximations
varies from 180° at dc to +90° at high frequencies, passing Using first-order
through +135° at 125 MHz, the -3 dB point of the magnitude approximations such as
curve. In other words, s21 behaves like a single pole in the equation 21 is an important
frequency domain, and it is possible to write a closed step in circuit design. The
intuitive sense that
expression for it. This expression is
designers gain from
- s 210e - w j T0
developing an under-
standing of these
s 21 = (21)
w approximations can
1+ j
w 0 eliminate much frustration.
The acquired insight can
where
save hours of time that
T0 = 112 ps otherwise might be wasted
w =p2 f generating designs that
cannot possibly be realized
w 0 = p 2 ¥ 125 MHz
in the lab, while also
s 210 = 11.2 = 21 dB decreasing development
costs.
The time delay T0 = 112 ps is due primarily to the
transit time of minority carriers (electrons) across
the base of this npn transistor.
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S-Parameters
The s-parameters of an 2N3478
transistor shown in Figures 4a
through 4f were measured with the
classic HP 8410A network analyzer.
In Figures 5a through 5e, the
s-parameters of an 2N3478 transistor
are shown re-measured with a
modern HP 8753 network analyzer.
Figures 5a through 5e represent the
actual s-parameters of this transistor
between 0.300 MHz and 1.00 GHz. S11
Figure 5a S 22
S-parameters of 2N3478 transistor
in common-emitter configuration,
measured by an HP 8753 network
analyzer. This plot shows s 11 and
s 22 on a Smith Chart. The marker set at 47 MHz represents
the -3 dB gain roll off point of s 21 . The frequency index of
this point is referenced in the other plots.
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S-Parameters
Magnitude (dB)
S 12 S 21
Phase (deg)
Frequency
Figure 5b
A plot of the magnitude and phase of s 12 . While the Figure 5c
phase of s 12 depends only weakly on the frequency, A polar plot of s 21 . The frequency
the magnitude increases rapidly at low frequencies. marker shown is at the -3 dB point.
Both the phase angle and magnitude
decrease dramatically as the
frequency is increased.
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S-Parameters
Magnitude (dB)
S 21
Phase (deg)
S 21
Figure 5d Figure 5e
The magnitude of s 21 plotted on a log The phase angle, in degrees, of s 21 . A time
scale showing the 6 dB/octave roll-off delay of 167 ps was de-embedded from the
above 75 MHz. measured data using the analyzer's electrical-
delay feature to get a response with a single-
pole transfer characteristic. Removing this
time delay allows the phase distortion to be
33 viewed with much greater resolution.
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S-Parameters
In Fig. 5d, the magnitude of s21 from Fig. 5c is replotted Vector Network Analyzers
on a logarithmic frequency scale. The magnitude of s21 is Most modern design
essentially constant to 75 MHz, and then rolls off at a slope projects, RF through
of 6 dB/octave. The phase angle of s21 as seen in Fig. 5e lightwave, use
varies linearly with frequency above 500 MHz. To better sophisticated simulation
software to model system
characterize phase distortion, a compensating linear phase
performance from
shift was introduced electronically in the network analyzer.
components through
This established an accurate calibration for measuring the
subsystems. These
device, resulting in the second phase curve of Figure 5e. programs require complete
s-parameter data on each
To go from the first phase curve of Fig. 5e to the second phase component. Measurements
curve required removing a pure time delay of 167 picoseconds. are made with a VNA,
Thirty years ago this operation was accomplished by Vector Network Analyzer,
de-embedding 5.0 cm of line using a calibrated line stretcher. an instrument that
Today it’s performed by software in the network analyzer. accurately measures the
s-parameters, transfer
After removal of the constant-delay, or linear-phase, function, or impedance
component, the phase angle of s21 for this transistor characteristic of linear
(Fig. 5e) varies from 180° at dc to +90° at high frequencies, networks across a broad
passing through +135° at 75 MHz, the -3 dB point of the range of frequencies.
magnitude curve. In other words, s21 behaves like a single
34 pole in the frequency domain.
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S-Parameters
Since s21 behaves like a single pole in the frequency domain, Complete network
it is possible to write a closed expression for it. This expression characterization
is the same as equation 21, repeated here. Vector Network Analyzers
T0 = 167 ps (VNA) are ideal for applica-
tions requiring complete
− s 210 e − jωT0 ω = 2π f network characterization.
s 21 = where
ω ω 0 = 2 π × 75 MHz
They use narrow-band
1+ j detection to achieve wide
ω0 dynamic range and provide
s 210 = 8.4 = 18.5 dB
noise-free data. VNAs are
The time delay T0= 167 ps is due primarily to the transit time often combined with powerful
of minority carriers (electrons) across the base of this npn computer-based electronic
transistor. Removing this time delay using the electrical-delay design automation (EDA)
feature of the vector network analyzer allows the phase systems to both measure
distortion to be viewed with much greater resolution. data, and simulate and
optimize the performance
Using the first-order, single-pole approximation for s21 is an of the complete system
important step in circuit design. Today, however, we have design implementation being
technology undreamed of in 1967. Subsequently, through the developed.
process of electronic design automation (EDA), computer-aided
engineering (CAE) tools now can be used iteratively to simulate
and refine the design. These tools combine accurate models
35 with performance-optimization and yield-analysis capabilities.
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S-Parameters
Explanation of Measurement Discrepancies
You may have noticed a difference between the measured and
caclulated data from the 1967 HP Journal article and the data
obtained for this updated application note. Both sets of data are
fundamentally correct. Two major sources account for these
differences:
Measurement techniques – Early network analyzers did not
have onboard computers, an HP-IB standard, or high-resolution
graphics to perform calibration, extract precision numerical
data, or display electronic markers. Calibration techniques
used in 1967 were procedurally and mathematically simpler
than those used today. Modern network anaylzers contain
sophisticated automated techniques that enhance measurement
processing capabilities and reduce operator errors.
Device differences – Semiconductor manufacturing processes
evolve over time. Device engineers attempt to produce identical
transistors with different processes. Nevertheless, successive
generations of parts like the 2N3478 can exhibit unintentional,
and sometimes unavoidable, performance differences, especially
in characteristics not guaranteed on the datasheet.
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Amplifier Design
Suppose now that this 2N3478 transistor is to be Unilateral figure of merit
used in a simple amplifier, operating between a All two-port models are
50 Ω source and a 50 Ω load, and optimized bilateral, so both the
for power gain at 300 MHz by means of forward and reverse signal
lossless input and output matching flow must be considered.
If the signal flow in the
networks. Since reverse gain s12 for this
reverse direction is much
transistor is quite small—50 dB smaller
smaller than the flow in
than forward gain s21, according to
the forward direction,
Fig. 4—there is a possibility that it can be it is possible to make the
neglected. If this is so, the design problem will simplification that the
be much simpler, because setting s12 equal to zero will make reverse flow is zero.
the design equations much less complicated.
In determining how much error will be introduced by assuming The unilateral figure of
merit is a quick calculation
s12 = 0, the first step is to calculate the unilateral figure of
that can be used to
merit u, using the formula given in Appendix B. That is,
determine where this
s11 s12 s 21 s 22 simplification can be
u = (22) made without significantly
2 2
(1 − s11 )(1 − s 22 ) affecting the accuracy of
the model.
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Amplifier Design
A plot of u as a function of frequency, calculated from
the measured parameters, appears in Fig. 4f. Now if GTu
is the transducer power gain with s12 = 0 and GT is the
actual transducer power gain, the maximum error
High-frequency transistors
introduced by using GTu instead of GT is given by the
Discrete transistors were
following relationship:
the mainstay of high-
1 GT 1 frequency system design in
< < 1967 when Dick Anderson
(1 + u )2 G Tu (1 − u )2 (23) wrote the article on which
this application note is
From Fig. 4f, the maximum value of u is about 0.03, so the based. Thirty years later,
maximum error in this case turns out to be about +0.25 dB discrete devices are still
at 100 MHz. This is small enough to justify the assumption available, manufactured
that s12 = 0. and selected for specific,
often exceptional,
Incidentally, a small reverse gain, or feedback factor, s12, is an
performance characteristics.
important and desirable property for a transistor to have, for
Discrete transistors remain
reasons other than it simplifies amplifier design. A small feedback the best choice for many
factor means that the input characteristics of the completed applications, such as
amplifier will be independent of the load, and the output will be sensitive first-stage
independent of the source impedance. In most amplifiers, amplifiers in satellite
isolation of source and load is an important consideration. TV receivers.
38
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Amplifier Design
Satellite Broadcast Signals
Returning now to the 300-MHz amplifier design, the unilateral Satellites provide broad
expression for transducer power gain, obtained either by geographical signal
setting s12 = 0 in equation 18 or looking in Appendix B, is coverage over a wide band
of frequencies by using
2 2 2
s 21 (1 − ΓS )(1 − ΓL ) high power vacuum tubes,
G Tu = (24)
called Traveling Wave
2 2 Tubes (TWTs), which are
1 − s11ΓS 1 − s 22 ΓL
best characterized by
s-parameters.
When | s11| and | s22| are both less than one, as they are in
this case, maximum GTu occurs for ΓS = s*11 and ΓL = s*22
(Appendix B).
The next step in the design is to synthesize matching networks
that will transform the 50 Ω load and source impedances to
the impedances corresponding to reflection coefficients of s*11
and s*22, respectively. Since this is to be a single-frequency
amplifier, the matching networks need not be complicated.
Simple series-capacitor, shunt-inductor networks will not only
do the job, but will also provide a handy means of biasing the
transistor—via the inductor—and of isolating the dc bias from
the load and the source.
39
7
H
Amplifier Design
Values of L and C to be used in the matching networks for the Matching networks
300-MHz amplifier are determined using the Smith Chart of Matching networks are
Fig. 6, which is shown on the next page. First, points extra circuit elements
corresponding to s11, s*11, s22, and s*22 at 300 MHz are added to a device or
plotted. Each point represents the tip of a vector leading away circuit to cancel out
or compensate for
from the center of the chart, its length equal to the magnitude
undesired characteristics
of the reflection coefficient being plotted, and its angle equal
or performance variations
to the phase of the coefficient.
at specified frequencies.
Next, a combination of constant-resistance and constant- To eliminate reflections in
conductance circles is found, leading from the center of the an amplifier, one matching
chart, representing 50 Ω, to s*11 and s*22. The circles on the network is carefully
Smith Chart are constant-resistance circles; increasing series designed to transform
capacitive reactance moves an impedance point counter- the 50 Ω load impedance
to s*11. Another matching
clockwise along these circles.
network transforms the
You will find an interactive Impedance Matching Model at the 50 Ω source impedance to
HP Test & Measurement website listed below. Challenge s*22.
yourself to impedance matching games based on principles
and examples discussed in this application note!
Click on the URL below or type the address in your browser.
40 http://www.hp.com/go/tminteractive
7
H
Amplifier Design
Figure 6
In this case, the circle to be used for Smith Chart for 300-MHz
finding series C is the one passing amplifier design example.
through the center of the chart, as
shown by the solid line in Fig. 6.
Increasing shunt inductive s*
11
susceptance moves impedance
points clockwise along constant- L1
conductance circles. These s*22
circles are like the constant-
resistance circles, but they
are on another Smith Chart,
one that is just the reverse C1
of the chart shown in Fig. 6.
C2 L2 s22
The constant-conductance
circles for shunt L all pass s11
through the leftmost point of
the chart rather than the rightmost
point. The circles to be used are
those passing through s*11 and s*22,
as shown by the dashed lines in Fig. 6.
41
7
H
Amplifier Design
Figure 7
Once these circles have been located, A 300-MHz amplifier with
matching networks for
the normalized values of L and C
maximum power gain.
needed for the matching networks are
calculated from readings taken from the C2
reactance and susceptance scales of the C1
2N3478
Smith Charts.
Each element’s reactance or 50W L1 L2 50W
susceptance is the difference between
the scale readings at the two end points
of a circular arc. Which arc corresponds
to which element is indicated in Fig. 6. X =
50
= 156 W
Calculations: L 2 0.32
The final network and the element 156
values, normalized and unnormalized, L2 = = 83 nH
are shown in Fig. 7. 2 p ( 0.3 x 10 )
9
1
C2 = = 3 pF
2 p ( 0.3 x 109 )( 3.5 )( 50 )
1
C1 = = 25 pF
2p ( 0.3 x 109 )(0.42)(50)
50
L1 = = 26 nH
2p ( 0.3 x 109 )(1.01)
42
7
H
Amplifier Design
S*
22
The animation to the right demonstrates how to use a
Smith Chart to design a matching network between a transistor
output and a resistive load. As previously described, to
maximize the power delivered to the load, the s*22 parameter of
the transistor must be matched to the load impedance, 50 Ω in
this 300-MHz amplifier example. This matching is achieved
using the LC circuit shown at the right.
Starting from the 50 Ω load, the series capacitance is varied to
move the impedance point along the circle of constant 50 Ω C = 1000 pF
resistance on the Smith Chart. The capacitance is adjusted until L = 10000 nH
it intersects the constant conductance circle on which s*22 is
sitting. Varying the shunt inductance then moves the impedance
point along this constant Animation 2
C
conductance circle as Impedance matching
indicated by the admittance using the Smith Chart
Smith Chart. To reach s*22, for the matching
2N3478 L 50 Ω
the shunt inductance is network shown at the
adjusted until the impedance left. Click over the chart
point reaches s*22. to start animation.
43 http://www.hp.com/go/tminteractive
8
H
Amplifier Design
Designing a broadband amplifier, that is, one
which has nearly constant gain over a GTu = G0 G1G2
prescribed frequency range, is a matter of
surrounding a transistor with external
2
elements in order to compensate for the
variation of forward gain, | s21| with
G0 = s21
frequency.
2
This can be done in either of two ways—
1 − Γs
first, negative feedback, or second, selective
G1 =
mismatching of the input and output 2
circuitry. We will use the second method. 1 − s11Γs
When feedback is used, it is usually
convenient to convert to y- or z-parameters
2
(for shunt or series feedback, respectively)
1 − ΓL
using the conversion equations given in
Appendix B and a digital computer.
G2 =
2
Equation 24 for the unilateral transducer 1 − s22ΓL
power gain can be factored into three parts,
as shown to the right:
44
8
H
Amplifier Design
When a broadband amplifier is designed by selective
mismatching, the gain contributions of G1 and G2 are varied to
compensate for the variations of G0= |s21|2 with frequency.
Suppose that the 2N3478 transistor whose s-parameters are
given in Fig. 4 is to be used in a broadband amplifier that will
operate from 300 MHz to 700 MHz. The amplifier is to be
driven from a 50 Ω source and is to drive a 50 Ω load.
According to Figure 4f,
2
s 21 = 13 dB at 300 MHz
= 10 dB at 450 MHz
= 6 dB at 700 MHz
To realize an amplifier with a constant gain of 10 dB, source
and load matching networks must be found that will decrease
the gain by 3 dB at 300 MHz, leave the gain the same at
450 MHz, and increase the gain by 4 dB at 700 MHz.
45
8
H
Amplifier Design
Although in the general case both a source
matching network and a load matching
network would be designed, G1max (i.e.,
G1 for Γs = s*11) for this transistor is
s*
22
less than 1 dB over the frequencies of
interest, which means there is little to
be gained by matching the source. 700
Consequently, for this example, only
a load-matching network will be 450
designed. Procedures for designing 300
source-matching networks are
identical to those used for designing
load-matching networks.
The first step in the design of the
load-matching network is to plot s*22
over the required frequency range on the
Smith Chart, Fig. 8a.
Figure 8a
A plot of s* 22 over the frequency
range from 300 MHz to 700 MHz.
46
8
H
Amplifier Design
Figure 8
Next, a set of constant-gain circles is drawn. As shown in Fig. 8b, Constant-gain circles.
each circle is drawn for a single frequency; its center is on a line
between the center of the Smith Chart and the point
representing s*22 at that frequency. The distance from
the center of the Smith Chart to the center of the
constant gain circle is given by the following
equations, which also appear in Appendix B:
G2 = +4 dB
1 − g 2 s 22 at 700 MHz r2 ρ
r2 = 2
2
1 − s 22 (1 − g 2 )
where r2
r2
g2 =
G2 2
= G 2 (1 − s 22 ) ρ
G 2 max 2
The radius of the constant-gain circle is:
G2 = 0 dB ρ
at 450 MHz 2
2
1 − g 2 (1 − s 22 )
ρ2 =
2
1 − s 22 (1 − g 2 ) G2 = – 3 dB
at 300 MHz
47
8
H
Amplifier Design
For this example, three circles will be drawn, one for G2 = -3 dB
at 300 MHz, one for G2 = 0 dB at 450 MHz, and one for G2 =
+4 dB at 700 MHz. Since |s22| for this transistor is constant at
0.85 over the frequency range [see Figure 4(b)], G2max for all
three circles is (0.278)-1, or 5.6 dB. The three constant-gain
circles are indicated in Fig. 8b. Figure 9
A combination of shunt
The required matching network must transform the center of the and series inductances
Smith Chart, representing 50 W , to some point on the -3 dB is a suitable matching
circle at 300 MHz, to some point on the 0 dB circle at 450 MHz, network for the
and to some point on the +4 dB circle at 700 MHz. There are broadband amplifier.
undoubtedly many networks that
will do this. One satisfactory Lseries
solution is a combination of two
inductors, one in shunt and one in
series, as shown in Fig. 9. 50W
2N3478
Lshunt ZL = 50W
48
8
H
Amplifier Design
Figure 10a
Shunt and series elements move impedance points Constant resistance Matching paths
on the Smith Chart along constant-conductance circles-Transformation for shunt and
and constant-resistance circles, as explained in due to Lseries series L.
the narrow-band design example. As shown in
Fig. 10a, the shunt inductance transforms the ΓL locus
50 Ω load alng a circle of constant conductance
and varying (with frequency) inductive Hz
M
susceptance. The series inductor transforms 00 Hz
the combination of the 50 Ω load and the M
3
50 Hz
M
4
Amplifier Design
36.4 nH
Once appropriate constant-
conductance and constant-
resistance circles have been found, ZS = 50Ω
2N3478
the reactances and susceptances
of the elements can be read 20.4 nH 50Ω
directly from the Smith Chart.
Then the element values are
calculated, the same as they were
for the narrow-band design. Inductance Calculations:
Figure 10b is a schematic diagram
j ω L series
of the completed broadband From 700 MHz data, = j ( 3.64 - 0.44 ) = j 3.2
Z0
amplifier, with unnormalized
( 3.2 ) ( 50 )
element values. L series = nH = 36.4 nH
2 π ( 0.7 )
Z0
From 300 MHz data, = - j 1.3
j ω L shunt
Figure 10b
Broadband amplifier with constant gain 50
L shunt = = 20.4 nH
of 10 dB from 300 MHz to 700 MHz. (1.3 ) (2 π ) ( 0.3 )
50
9
H
Test & Measurement
Application Note 95-1
S-Parameter Techniques
Stability Considerations
Two port with
Design of Reflection Amplifiers s'11 > 1
and Oscillators (Real part of input
When the real part of the input impedance of a impedance is
negative)
network is negative, the corresponding input
reflection coefficient (Equation 17) is greater
than one, and the network can be used as the
basis for two important types of circuits,
reflection amplifiers and oscillators. A reflection
amplifier (Fig. 11) can be realized with a
circulator—a nonreciprocal three-port device— Circulator
and a negative-resistance device.
The circulator is used to separate the incident
(input) wave from the larger wave reflected by Input Output
the negative-resistance device. Theoretically, if
the circulator is perfect and has a positive real
characteristic impedance Z0, an amplifier with
infinite gain can be built by selecting a negative- Figure 11
resistance device whose input impedance has a Reflection amplifier
real part equal to -Z0 and an imaginary part consists of circulator and
equal to zero (the imaginary part can be set transistor with negative
equal to zero by tuning if necessary). input resistance.
51
9
H
Test & Measurement
Application Note 95-1
S-Parameter Techniques
Γs s′11 = 1 (25)
Stability Considerations
Figure 12 The transistor
To see how these principles of oscillator is designed by
stability are applied in design choosing a tank circuit
problems, consider the such that Γs s′11 = 1
transistor oscillator design
illustrated in Fig. 12. In this ω0, Q
case the input reflection
coefficient s′11 is the reflection Parallel
coefficient looking into the 150 Ω ΓT1 Tank
collector circuit, and the
‘source’ reflection coefficient Γs Circuit
is one of the two tank-circuit
refection coefficients, ΓT1 or
ΓT2. From equation 19,
Gain s' 200 Ω ZL, ΓL
11
Element
s s Γ
s ′11 = s 11 + 12 21 L
1 − s 22 ΓL
15 Ω Series
ΓT2 Tank
ω0, Q
Circuit
53
9
H
Test & Measurement
Application Note 95-1
S-Parameter Techniques
Stability Considerations
To make the transistor oscillate, s′11 and Γs must be adjusted so
that they satisfy equation 25. There are four steps in the design
procedure:
– Measure the four scattering parameters of the transistor as
functions of frequency.
– Choose a load reflection coefficient ΓL that makes s′11 greater
than unity. In general, it may also take an external feedback
element that increases s12 s21 to make s′11 greater than one.
– Plot 1/s′11 on a Smith Chart. (If the network analyzer is
being used to measured the s-parameters of the transistor,
1/s′11 can be measured directly by reversing the reference and
test channel connections between the reflection test unit and
the harmonic frequency converter. The polar display with a
Smith Chart overlay then gives the desired plot immediately.)
– Connect either the series or the parallel tank circuit to the
collector circuit and tune it so that ΓT1 or ΓT2 is large enough
to satisfy equation 25. (The tank circuit reflection coefficient
plays the role of Γs in this equation.)
54
9
H
Test & Measurement
Application Note 95-1
S-Parameter Techniques
Stability Considerations
2.7 GHz
Figure 13 shows a Smith Chart plot of 1.5 GHz
1/s¢ 11 for a high frequency transistor
in the common-base configuration.
Load impedance ZL is 200 W ,
s'11 2.5 GHz 2.0 GHz
w w
resonant frequencies of the
two tank circuits. Oscillations 0 0
occur when the locus of G T1 or
G T2 passes through the shaded
region. Thus, this transistor
G T2
would oscillate from 1.5 to
2.5 GHz with a series tuned circuit,
G T1
and from 2.0 to 2.7 GHz with a
parallel tuned circuit.
— Dick Anderson, 1967 and 1997
Figure 13 The transistor will oscillate in the shaded area between 1.5 and 2.5 GHz
55 with a series-tuned circuit and between 2.0 and 2.7 GHz with a parallel-tuned circuit.
A
H
on S-Parameters
In addition to previous references listed earlier and repeated
again here, the following papers and books were listed in the
1967 HP Journal article as sources for information on
s-parameter design procedures and flow graphs. Current
references are also mentioned.
– J. K. Hunton, ‘Analysis of Microwave Measurement
Techniques by Means of Signal Flow Graphs,’
IRE Transactions on Microwave Theory and Techniques,
Vol. MTT- 8, No. 2, March, 1960.
– D.C Youla, ‘On Scattering Matrices Normalized to Complex
Port Numbers,’ Proc. IRE, Vol. 49, No. 7, July, 1961.
– J.G. Linvill and J.F. Gibbons, ‘Transistors and Active
Circuits,’ McGraw-Hill, 1961. (No s-parameters, but good
treatment of Smith Chart design methods.)
– N. Kuhn, ‘Simplified Signal Flow Graph Analysis,’
Microwave Journal, Vol. 6, No, 11, November, 1963.
– K. Kurokawa, ‘Power Waves and the Scattering Matrix,’
IEEE Transactions on Microwave Theory and Techniques,
Vol. MTT-13, No. 2, March, 1965.
56
A
H
on S-Parameters
– F. Weinert, ‘Scattering Parameters Speed Design of Keep up to date
High-Frequency Transistor Circuits,’ This book by P. H. Smith
Electronics, Vol. 39, No. 18, Sept. 5, 1966. referenced here must be
considered the ultimate
– G. Fredricks, ‘How to Use S-Parameters for Transistor source on Smith Charts.
Circuit Design,’ EEE Vol. 14, No. 12, Dec., 1966. Many excellent articles on
Among many modern reference sources on the subject, the the use of Smith charts
following book, first published in 1969, is definitely a classic: have appeared in trade
publications such as the
– Smith, Phillip H., ‘Electronic Applications of the Smith Microwave Journal, and
Chart in Waveguide, Circuit and Component Analysis,’ educational Smith Chart
Noble Publishing Classic Series, Tucker, Georgia, 1995, software is sold over the
ISBN-1-884932-39-8, 237 pp. internet.
Relationships
+ +
a1 a2 b1 = s11 a1 + s12 a 2
V1 TWO - PORT V2
b1 NETWORK b2 b2 = s 21 a1 + s 22 a 2
– –
Relationships
Power Gain 2 2
s 21 1 − ΓL
Power delivered to load
G= =
Power input to network 2 2 2 2
1 − s11 + Γ L s 22 − D − 2Re( ΓL N)
Relationships
Unilateral Transducer Power Gain s12 = 0( ) 2
G 0 = s 21
2 2 2
s 21 1 − ΓS 1 − ΓL
2
G Tu = = G 0 G1 G 2 1 − ΓS
1 − s 11 ΓS
2
1 − s 22 ΓL
2
G1 =
2
1 − s 11 ΓS
2
1 − ΓL
G2 =
Maximum Unilateral Transducer Power Gain when s 11 < 1 2
1 − s 22 ΓL
*
and s 22 < 1. Maximum obtained for ΓS = s11 and ΓL = s *22 1
G i max =
2
s 21
2 1 − s ii
Gu = = G 0 G1 max G 2 max
2 2 i = 1,2
1 − s11 1 − s 22
60
B
H
Relationships
Constant Gain Circles (Unilateral case: s12 = 0)
• center of constant gain circle is on line between center
of Smith Chart and point representing s*ii
• radius of circle: S*
2 ri ii
1 − g i (1 − sii )
ρi =
ρ
2
1 − s ii (1 − g i )
where i = 1, 2, and
i
Gi 2
gi = = Gi (1 − sii )
Gi max
61
B
H
Relationships
Unilateral figure of merit
Unilateral Figure of Merit
All two-port models are
bilateral, so both the
s11 s 22 s12 s 21
u= forward and reverse signal
2 flow must be considered.
( 1 − s11 )( 1 − s 22 2 ) If the signal flow in the
reverse direction is much
smaller than the flow in
the forward direction, it’s
possible to make the
simplification that the
reverse flow is zero.
Error Limits on Unilateral Gain Calculations
1 GT 1
< < The unilateral figure of
merit is a quick calculation
(1 + u 2 ) G Tu (1 − u 2 ) that can be used to
determine where this
simplification can be
made without significantly
affecting the accuracy of the
model.
62
B
H
Relationships
Conditions for Absolute Stability : a . s11 < 1, s 22 < 1
63
B
H
Relationships
Source and load for Simultaneous Match
2 2
1
B ± B1 − 4 M
ΓmS = M *
2M
2 (Use minus sign
2 2 2
B = 1 + s − s − D
when B1 is positive, 1 11 22
2 2 2 2
B 2 ± B 2 −4 N 2 plus sign when
B 2 = 1 + s 22 − s11 − D
ΓmL = N* B1 is negative.)
2N
2
where K = C −1
64
B
H
Relationships
s-parameters z-parameters
in terms of z-parameters in terms of s-parameters
( z 11 − 1)( z 22 + 1) − z 12 z 21 (1 + s 11 )(1 − s 22 ) + s 12 s 21
s 11 = z 11 =
( z 11 + 1)( z 22 + 1) − z 12 z 21 (1 − s 11 )(1 − s 22 ) − s 12 s 21
2z 12 2s 12
s 12 = z 12 =
( z 11 + 1)( z 22 + 1) − z 12 z 21 (1 − s 11 )(1 − s 22 ) − s 12 s 21
2z 21 2s 21
s 21 = z 21 =
( z 11 + 1)( z 22 + 1) − z 12 z 21 (1 − s 11 )(1 − s 22 ) − s 12 s 21
( z 11 + 1)( z 22 − 1) − z 12 z 21 (1 + s 22 )(1 − s 11 ) + s 12 s 21
s 22 = z 22 =
( z 11 + 1)( z 22 + 1) − z 12 z 21 (1 − s 11 )(1 − s 22 ) − s 12 s 21
65
B
H
Relationships
s-parameters y-parameters
in terms of y-parameters in terms of s-parameters
(1 − y 11 )(1 + y 22 ) + y 12 y 21 (1 + s 22 )(1 − s 11 ) + s 12 s 21
s 11 = y 11 =
(1 + y 11 )(1 + y 22 ) − y 12 y 21 (1 + s 11 )(1 + s 22 ) − s 12 s 21
−2y 12 −2s 12
s 12 = y 12 =
(1 + y 11 )(1 + y 22 ) − y 12 y 21 (1 + s 11 )(1 + s 22 ) − s 12 s 21
−2y 21 −2s 21
s 21 = y 21 =
(1 + y 11 )(1 + y 22 ) − y 12 y 21 (1 + s 11 )(1 + s 22 ) − s 12 s 21
(1 + y 11 )(1 − y 22 ) + y 12 y 21 (1 + s 11 )(1 − s 22 ) + s 12 s 21
s 22 = y 22 =
(1 + y 11 )(1 + y 22 ) − y 12 y 21 (1 + s 11 )(1 + s 22 ) − s 12 s 21
66
B
H
Relationships
s-parameters h-parameters
in terms of h-parameters in terms of s-parameters
( h 11 − 1)( h 22 + 1) − h 12 h 21 (1 + s 11 )(1 + s 22 ) − s 12 s 21
s 11 = h 11 =
( h 11 + 1)( h 22 + 1) − h 12 h 21 (1 − s 11 )(1 + s 22 ) + s 12 s 21
2h 12 2s 12
s 12 = h 12 =
( h 11 + 1)( h 22 + 1) − h 12 h 21 (1 − s 11 )(1 + s 22 ) + s 12 s 21
−2h 21 −2s 21
s 21 = h 21 =
( h 11 + 1)( h 22 + 1) − h 12 h 21 (1 − s 11 )(1 + s 22 ) + s 12 s 21
(1 + h 11 )(1 − h 22 ) + h 12 h 21 (1 − s 22 )(1 − s 11 ) − s 12 s 21
s 22 = h 22 =
( h 11 + 1)( h 22 + 1) − h 12 h 21 (1 − s 11 )(1 + s 22 ) + s 12 s 21
67
B
H
Relationships
Parameter Normalization
The h–, y–, and z–parameters listed in
previous tables are all normalized to Z0. The various scattering
parameters are all
If h′, y′, z′ are the actual parameters, then:
normalized by the
reference impedance, Z 0 .
This impedance is usually
′ = z 11Z 0
z 11 ′ = y 11 / Z 0
y 11 ′ = h 11Z 0
h 11 the characteristic
impedance of the
′ = z 12 Z 0
z 12 ′ = y 12 / Z 0
y 12 ′ = h 12
h 12 transmission line in which
the network of interest is
embedded. Normalizing
z ′21 = z 21Z 0 y ′21 = y 21 / Z 0 h ′21 = h 21
the scattering parameters
makes the Smith Chart
z ′22 = z 22 Z 0 y ′22 = y 22 / Z 0 h ′22 = h 22 / Z 0 readily applicable to
transmission lines of any
impedance. In addition,
impedance and
admittance values can be
plotted on the same
chart.
68
C
H
Frequency Design
Electronic Design Automation (EDA)
The Software Revolution
In the 30 years that have elapsed since the
publication of Dick Anderson's article,
computer aided engineering (CAE) tools have
been developed for the high-frequency design
methods that were traditionally implemented
using pencil and paper. These computer
software programs run on UNIX workstations
and PCs, and do much more than merely
assist in computation-intensive design tasks.
Modern CAE tools for high-frequency
design eliminate the need for simplifying
assumptions (such as, s12 = 0) and can
accurately simulate actual device, circuit, or
system behavior. They enable broadband
solutions, offer optimization and yield-analysis capabilities, and
provide answers to “What if?” questions. CAE tools also speed the
analysis of a wide range of RF and microwave devices, circuits,
and systems, for a shorter time to market, while lowering costs.
69
C
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Frequency Design
Circuit Envelope Simulation
The CAE tools of interest to RF and The waveform above
microwave designers include those typifies the modulated
summarized below: and transient signals that
Small-signal (s-parameter) simulation — can be efficiently analyzed
Small-signal analysis CAE tools simulate using circuit envelope
response over a range of frequencies, so actual implementations simulator software. Circuit
perform more closely to design parameters. Matching circuits are envelope simulation is
easily determined, and can be readily optimized, saving time. orders of magnitude faster
A yield-analysis feature allows the selection of components in than traditional SPICE
matching networks for the best production yield, saving costs. simulation software if the
Large-signal simulation — This powerful analysis tool envelope bandwidth of the
includes the harmonic balance implementation, useful for RF carrier frequency is
oscillator design and many other problems. much smaller than the
carrier frequency itself.
Circuit Envelope simulation — Efficiently analyzes circuits This is the case in many
and feedback loops in the presence of modulated or transient communications, and radar
high-frequency signals. circuits and subsystems.
70
C
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Frequency Design
Time-domain analysis — A CAE tool that is especially
useful for simulating the response of digital systems at
high clock rates.
Planar electromagnetic analysis — This simulator
accurately computes the s-, y-, or z-parameters of arbitrarily
shaped, multilayer planar structures such as striplines.
3D electromagnetic analysis — This CAE tool accurately High Flying Software
computes the s-parameters for passive, three-dimensional, The pattern of a horn
multiport structures. antenna, displayed using
HP High-Frequency
System analysis — System and board-level simulators offer Structure Simulator
discrete-time and frequency-domain capabilities; can analyze 3D electromagnetic
and optimize complicated system topologies; handle complex visualization software,
waveforms; and perform physical layout design. shows beam shapes
in both azimuth and
Modeling systems — Hardware and software are combined to
elevation in a single plot.
extract parameters needed for accurate active device modeling.
71 http://www.hp.com/go/hpeesof
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Test & Measurement
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Test & Measurement
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Test & Measurement
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H
Test & Measurement
©
mathematical programming, digital publishing & production,
technical illustrations, updated & content supervision, overall
revised content, and animations. direction, & project management.
Jeff Gruszynski – expert domain Christina Bangle – free-style
consultant, content perspectives, illustrations.and graphic reviews.
side-bars text, and source images. Kathy Cunningham – page
layout design and Quark guru.
Contributors Leann Scully – source images. Richard W. Anderson
Walt Patstone – technical Holds a 1959 BSEE degree
content and side-bar editing. Business Manager from Utah State University
and a 1963 MSEE degree
Chuck McGuire, Mike Nyna Casey – funding, support,
from Stanford University.
C’debaca – new s-parameter excitement, and encouragement.
During his 37 years with HP
measurements & device output. Dick has contributed to the
development of numerous
© Copyright Hewlett-Packard Company 1996-1997 All Rights Reserved. microwave and other T&M
Adaptation, reproduction, translation, extraction, dissemination or dis- instruments. Currently, he
assembly without prior written permission is prohibited except as allowed is HP Vice President, and
under the copyright laws. S-Parameter Techniques for Faster, More General Manager of the
Accurate Network Design is electronically published as part of the HP T&M Microwave and
Test & Measurement Digital Application Note Library for the World Wide Communications Group.
Web, November 1996. Original printed publication Number 5952-1130.