Mosfet DFP2N60

DFP2N60/DFF2N60
DFP2N60 DFF2N60 2
1 1 2 1
600V 2.4A High ruggedness N-Channel MOSFET

BVDSS
: 600[V]
3 3
ID : 2.4[A] RDS(ON) : 5.5[] Typical
1. Gate 2. Drain 3. Source
package type : TO220/TO220F
Features
RDS(on) (Max 5.5 ) Gate Charge (Typical 15nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested Rohs Compliable Halogen Free available
General Description
This N-channel enhancement mode field-effect power transistor using DI semiconductors advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220 & TO220 full packages are well suited for charger SMPS and small power inverter application.
Absolute Maximum Ratings

Symbol
VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25 C) Continuous Drain Current(@TC = 100 C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 C) Derating Factor above 25 C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
(Note 2) (Note 1) (Note 3) (Note 1)
Parameter
Value DFP2N60
600 2.4 1.5 9.6 30 140 2.8 4.5 64 0.5 - 55 ~ +150 300 28 0.21 2.4* 1.5* 9.6*
DFF2N60
Units
V A A A V mJ mJ V/ns W W/C C C
*. Drain current is limited by junction temperature.
Thermal Characteristics
Symbol
RJC RJA
Sept, 2009. Rev. 4.
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Maximum value DFP2N60

1.95 62.5
DFF2N60
4.5 62.5
Units
C/W C/W
Copyright@ BoSung D&I Semiconductor Co., Ltd., Korea . All rights reserved.
1/11
DFP2N60/DFF2N60
Electrical Characteristics
Symbol Off Characteristics
BVDSS BVDSS/ TJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature coefficient Drain-Source Leakage Current Gate-Source Leakage, Forward Gate-source Leakage, Reverse VGS = 0V, ID = 250uA ID = 250uA, referenced to 25 C VDS =600V, VGS = 0V VDS = 480V, TC = 125 C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250uA VGS =10 V, ID =1.2A 600 0.38 1 10 100 -100 V V/C uA uA nA nA ( TC = 25 C unless otherwise noted )
Parameter
Test Conditions
Min
Typ
Max
Units
IGSS
On Characteristics
VGS(th) RDS(ON) Gate Threshold Voltage Static Drain-Source On-state Resistance 2.0 4.5 4.0 5.5 V
Dynamic Characteristics
Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS =0 V, VDS =25V, f = 1MHz 570 150 310 720 215 450 pF
Dynamic Characteristics
Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge(Miller Charge) VDS =480V, VGS =10V, ID =2.4A see fig. 12.
(Note 4, 5)
VDD =300V, ID =2.4A, RG =25 see fig. 13.

(Note 4, 5)
15 75 30 35 15 1.6 6
40 160 60 80 20 nC ns
Source-Drain Diode Ratings and Characteristics

Symbol
IS ISM VSD trr Qrr
Parameter
Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Test Conditions
Integral Reverse p-n Junction Diode in the MOSFET IS =2.4A, VGS =0V IS=2.4A, VGS=0V, dIF/dt=100A/us
Min.
-
Typ.
600 1.1
Max.
2.4* 9.6* 1.5 -
Unit.
A V ns uC
NOTES 1. Repeativity rating : pulse width limited by junction temperature 2. L =44.7mH, IAS =2.4A, VDD = 50V, RG = 50 , Starting TJ = 25C 3. ISD 2.4A, di/dt 300A/us, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse Width 300us, Duty Cycle 2% 5. Essentially independent of operating temperature.
2/11
DFP2N60/DFF2N60
Fig 1. On-State Characteristics
10
1
Fig 2. Transfer Characteristics

10
1
ID, Drain Current [A]
10
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top :
10
150 C 25 C -55 C
Notes : 1. VDS = 50V 2. 250 s Pulse Test
o o
10
-1
Notes : 1. 250 s Pulse Test 2. TC = 25
10
-2
10
-1
10
10
10
-1
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage

12
10
1
Fig 4. On State Current vs. Allowable Case Temperature
RDS(ON), Drain-Source On-Resistance [ ]
VGS = 10V
6
IDR, Reverse Drain Current [A]
10
150
10
0
25
VGS = 20V
2
Note : TJ = 25
Notes : 1. VGS = 0V 2. 250 s Pulse Test
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-Drain voltage [V]
Fig 5. Capacitance Characteristics ( Non-Repetitive )

750
Fig 6. Gate Charge Characteristics

12
VGS, Gate-Source Voltage [V]
Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd
VDS = 120V
10
VDS = 300V VDS = 480V
Capacitance [pF]
500
Notes : 1. VGS = 0V 2. f=1MHz
Ciss
250
Coss Crss
0 5 10 15 20 25 30 35 40
Note : ID = 2.4 A
12
16
QG, Total Gate Charge [nC]
3/11
DFP2N60/DFF2N60
Fig 7. Breakdown Voltage Variation vs. Junction Temperature
1.2 3.0
Fig 8. On-Resistance Variation vs. Junction Temperature
BVDSS, (Normalized) Drain-Source Breakdown Voltage
RDS(on), (Normalized) Drain-Source On-Resistance
2.5
1.1
2.0
1.0
1.5
1.0
Notes : 1. VGS = 10 V 2. ID = 1.2 A
0.9
Notes : 1. VGS = 0 V 2. ID = 250 A
0.5
0.8 -100
-50
50
100
o
150
200
0.0 -100
-50
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Fig 9. Maximum Safe Operating Area

10 10
1 1
Fig 10. Maximum Safe Operating Area
Operation in This Area is Limited by R DS(on)
100us 1ms 10ms 100ms DC
Operation in This Area is Limited by R DS(on)
100 s 1 ms 10 ms 100 ms DC
10
10
10
-1
10
-1
*. Notes : O 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse

O
*. Notes : O 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse

O
10
-2
10
-1
10
10
10
10
10
-2
10
10
10
10
Fig 11. Maximum Drain Current vs. Case Temperature. (TO220)

1.4
Fig 12. Maximum Drain Current vs. Case Temperature. (TO220F)
2.0
1.2
ID' Drain Current [A]
ID' Drain Current [A]
1.0 0.8 0.6 0.4 0.2
1.5
1.0
0.5
0.0 25
50
75
100
o
125
150
0.0 25
50
75
100
o
125
150
TC' Case Temperature [ C]
TC' Case Temperature [ C]
4/11
DFP2N60/DFF2N60
Fig 13. Transient Thermal Response Curve(TO220)
(t), Thermal Response
10
D =0 .5 0.2 0.1 0.0 5
*. N otes : O 1 . Z ? JC (t) = 1.95 C /W M a x. 2 . D uty F acto r, D = t 1 /t 2 3 . T JM - T C = P D M * Z ?

JC
(t)
10
-1
0 .0 2 0.01
t1
JC
Z?
sing le p ulse
t2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
t 1 , S q u a re W a ve P u lse D u ra tio n [se c]
Fig 14. Transient Thermal Response Curve(TO220F)

10
1
D =0 .5
(t), Thermal Response
10
0 .2 0 .1 0.0 5
*. N ote s : O 1. Z ? JC (t) = 4.5 C /W M ax. 2. D uty F a cto r, D = t 1 /t 2 3. T JM - T C = P D M * Z ?
JC
10
-1
0 .02 0 .01
(t)
JC
10
-2
sing le p ulse
t1 t2
Z?
10
-3
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
t 1 , S q u a re W a ve P u lse D u ra tio n [se c]
5/11
DFP2N60/DFF2N60
Fig. 12. Gate Charge Test Circuit & Waveforms
12V
200nF
50KO 300nF
Same Type as DUT
VGS Qg VDS
VGS
DUT
1mA
Qgs
Qgd
Charge
Fig 13. Switching Time Test Circuit & Waveforms
VDS
RL VDD
(0.5 rated VDS)
VDS
90%
10V RG Pulse Generator
DUT
Vin
10% td(on) tr ton td(off) toff tf
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
L VDS ID RG VDD
1 EAS = BVDSS IAS 2 LL IAS2
BVDSS BVDSS - VDD
ID(t) 10V DUT tp Time VDS(t)
6/11
DFP2N60/DFF2N60
Fig. 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ VDS _
IS
Driver RG
Same Type as DUT
VDD
VGS
dv/dt controlled by RG IS controlled by pulse period
VGS ( Driver )
Gate Pulse Width D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS ( DUT ) IRM
di/dt
Body Diode Reverse Current
VDS ( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode Forward Voltage Drop
7/11
DFP2N60/DFF2N60
TO-220 Package Dimension
pi
E A1 Q
H1
L1
b2 L b C e, typ. A2
Symbol A A1 A2 b b2 c D e E H1 L L1 pi Q
MIN. 0.14 0.02 0.08 0.015 0.045 0.014 0.56 0.096 0.38 0.23 0.5 0.139 0.1
INCHES TYP. 0.165 0.038 0.098 0.028 0.058 0.019 0.605 0.1 0.4 0.25 0.54 0.15 0.118
MAX. 0.19 0.055 0.115 0.04 0.07 0.024 0.65 0.104 0.42 0.27 0.58 0.25 0.161 0.135
MIN. 3.56 0.51 2.03 0.38 1.14 0.36 14.22 2.44 9.65 5.84 12.7 3.53 2.54
MILLIMETERS TYP. 4.195 0.955 2.475 0.7 1.46 0.485 15.365 2.54 10.16 6.35 13.715 3.81 2.985
MAX. 4.83 1.4 2.92 1.02 1.78 0.61 16.51 2.64 10.67 6.86 17.73 6.35 4.09 3.43
8/11
DFP2N60/DFF2N60
TO-220F Package Dimension
Sym bol A B C D E F G H I J K L M N
MIN 9.88 15.30 2.95 10.30 0.95 1.81 0.50 3.00 4.35 6.20 0.41 2.30 2.53 2.34
IN C H ES TYP 10.08 15.50 3.00 10.50 1.08 1.84 0.70 3.20 4.45 6.40 0.51 2.50 2.73 2.54
MAX 10.28 15.70 3.05 10.70 1.20 1.87 0.90 3.40 4.55 6.60 0.61 2.70 2.93 2.74
25.10 38.86 7.49 26.16 2.41 4.60 1.27 7.62 11.05 15.75 1.03 5.84 6.43 5.94
MILLIMETER S MIN 25.60 39.37 7.62 26.67 2.74 4.67 1.78 8.13 11.30 16.26 1.28 6.35 6.93 6.45
TYP 26.11 39.88 7.75 27.18 3.05 4.75 2.29 8.64 11.56 16.76 1.54 6.86 7.44 6.96
9/11
Marking layout & Ordering(TO220)

Date Code Company Symbol
1) XX : weekly code
2) YY : Annual code, Last two digits of Annual number. Ex) date code of product produced in 32nd week in 2010 : 3210
Assembly factory code

A B C
:A Fixed code to assembly site.(note 1) :Confidential code.(note 2) :Halogen free code.(note 3)
Device Code
D F P
:Bosung D&Is D :MOSFET ( E for E-fet series) :Package code(note 4)
<Note> 1. Assembly site code is an alphabetic code and fixed according to assembly site. 2. Confidential code is to protect D&Is product from imitation product and to control production. 3. Haloen free code is one of N or F. N is a code for Non-halogen free product and F is for halogen Free product. 4. Package codes to package types are P for TO220, F for TO220F, U for TO251, D for TO252, B for TO263, R for TO126, W for TO247/TO3P, K for SOT89, N for TO92, L for TO264. 5. This new marking layout for halogen free product has been applied to product which has been produced since 2009 .
Ordering for halogen free product

1. Halogen free products device code on marking layout is same with non-halogen free products device code. 2. In ordering, Halogen free products ordering code is different from the ordering code for non-halogen free product. 2.1. Ordering code for non-halogen free product : Device name 2.2. Ordering code for halogen free product : Device name + -HF As an example, DFF4N60-HF. DEP50N06-HF 3. How to discriminate Halogen free product from non-halogen free product. 3.1. See Assembly factory code in marking layout.
How to contact us Headquarters : Address : 201-1410, Chunui-Techono park II, Chunui-dong, Wonmi-gu, Bucheon-si, Korea. P.C. 420-857. TEL. +82-32-623-0145, FAX. +82-32-623-0148. Website : http://www.dnisemi.com.
Contact person :
Juliet Kim, Sales assistant, hhkim@dnisemi.com / Shon Go, Technical support, shgo@dnisemi.com.
10/11
Marking layout & Ordering(TO220F)

Device Code Assembly factory code
A B C
:A Fixed code to assembly site.(note 1) :Confidential code.(note 2) :Halogen free code.(note 3)
D F F
:Bosung D&Is D :MOSFET ( E for E-fet series) :Package code(note 4)
Date Code
1) XX : weekly code
Company Symbol
2) YY : Annual code, Last two digits of Annual number. Ex) date code of product produced in 32nd week in 2010 : 3210
<Note> 1. Assembly site code is an alphabetic code and fixed according to assembly site. 2. Confidential code is to protect D&Is product from imitation product and to control production. 3. Haloen free code is one of N or F. N is a code for Non-halogen free product and F is for halogen Free product. 4. Package codes to package types are P for TO220, F for TO220F, U for TO251, D for TO252, B for TO263, R for TO126, W for TO247/TO3P, K for SOT89, N for TO92, L for TO264. 5. This new marking layout for halogen free product has been applied to product which has been produced since 2009 .
Ordering for halogen free product

1. Halogen free products device code on marking layout is same with non-halogen free products device code. 2. In ordering, Halogen free products ordering code is different from the ordering code for non-halogen free product. 2.1. Ordering code for non-halogen free product : Device name 2.2. Ordering code for halogen free product : Device name + -HF As an example, DFF4N60-HF. DEP50N06-HF 3. How to discriminate Halogen free product from non-halogen free product. 3.1. See Assembly factory code in marking layout.
How to contact us Headquarters : Address : 201-1410, Chunui-Techono park II, Chunui-dong, Wonmi-gu, Bucheon-si, Korea. P.C. 420-857. TEL. +82-32-623-0145, FAX. +82-32-623-0148. Website : http://www.dnisemi.com.
Contact person :
Juliet Kim, Sales assistant, hhkim@dnisemi.com / Shon Go, Technical support, shgo@dnisemi.com.
11/11

Mosfet DFP2N60

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Mosfet DFP2N60

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DFP2N60/DFF2N60

600V 2.4A High ruggedness N-Channel MOSFET

ID : 2.4[A] RDS(ON) : 5.5[] Typical

1. Gate 2. Drain 3. Source

package type : TO220/TO220F

Absolute Maximum Ratings

*. Drain current is limited by junction temperature.

Maximum value DFP2N60

VDD =300V, ID =2.4A, RG =25 see fig. 13.

Source-Drain Diode Ratings and Characteristics

Fig 2. Transfer Characteristics

ID, Drain Current [A]

ID, Drain Current [A]

Notes : 1. 250 s Pulse Test 2. TC = 25

VDS, Drain-Source Voltage [V]

VGS, Gate-Source Voltage [V]

Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage

Fig 4. On State Current vs. Allowable Case Temperature

RDS(ON), Drain-Source On-Resistance [ ]

IDR, Reverse Drain Current [A]

Notes : 1. VGS = 0V 2. 250 s Pulse Test

ID, Drain Current [A]

VSD, Source-Drain voltage [V]

Fig 5. Capacitance Characteristics ( Non-Repetitive )

Fig 6. Gate Charge Characteristics

VGS, Gate-Source Voltage [V]

Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd

VDS = 300V VDS = 480V

Notes : 1. VGS = 0V 2. f=1MHz

VDS, Drain-Source Voltage [V]

QG, Total Gate Charge [nC]

Fig 8. On-Resistance Variation vs. Junction Temperature

BVDSS, (Normalized) Drain-Source Breakdown Voltage

RDS(on), (Normalized) Drain-Source On-Resistance

Notes : 1. VGS = 0 V 2. ID = 250 A

TJ, Junction Temperature [ C]

TJ, Junction Temperature [ C]

Fig 9. Maximum Safe Operating Area

Fig 10. Maximum Safe Operating Area

Operation in This Area is Limited by R DS(on)

100us 1ms 10ms 100ms DC

Operation in This Area is Limited by R DS(on)

ID, Drain Current [A]

ID, Drain Current [A]

*. Notes : O 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse

*. Notes : O 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse

VDS, Drain-Source Voltage [V]

VDS, Drain-Source Voltage [V]

Fig 11. Maximum Drain Current vs. Case Temperature. (TO220)

Fig 12. Maximum Drain Current vs. Case Temperature. (TO220F)

ID' Drain Current [A]

ID' Drain Current [A]

1.0 0.8 0.6 0.4 0.2

TC' Case Temperature [ C]

TC' Case Temperature [ C]

(t), Thermal Response

D =0 .5 0.2 0.1 0.0 5

*. N otes : O 1 . Z ? JC (t) = 1.95 C /W M a x. 2 . D uty F acto r, D = t 1 /t 2 3 . T JM - T C = P D M * Z ?

t 1 , S q u a re W a ve P u lse D u ra tio n [se c]

Fig 14. Transient Thermal Response Curve(TO220F)

(t), Thermal Response

t 1 , S q u a re W a ve P u lse D u ra tio n [se c]

Same Type as DUT

. N otes : O 1 . Z ? JC (t) = 1.95 C /W M a x. 2 . D uty F acto r, D = t 1 /t 2 3 . T JM - T C = P D M Z ?