Ordering number : ENN7312

FW503

MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode

FW503
DC / DC Converter Applications
Features

Package Dimensions

4.4

6.0

Composite type with a low ON-resistance, ultrahighunit : mm speed switching, low voltage drive, P-channel 2210 MOSFET and a short reverse recovery time, low forward voltage schottky barrier diode facilitating high8 density mounting. The FW503 incorporates two chips being equivalent to the MCH3306 and the SBS004 in one package.

[FW503]
5
0.3

5.0
1.5

0.595

1.27

0.43

0.1

1.8max

0.2

1 : Anode 2 : No Contact 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Cathode 8 : Cathode SANYO : SOP8

Specifications
Absolute Maximum Ratings at Ta=25C
Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 15 15 1 10 --55 to +125 --55 to +125 V V A A C C VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (2000mm2!0.8mm) 10S -20 10 --3 -12 2 150 --55 to +125 V V A A W C C Symbol Conditions Ratings Unit

Marking : W503

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2502 TS IM TA-100186 No.7312-1/5

FW503
Electrical Characteristics at Ta=25C
Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain Miller Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time VR VF 1 VF 2 IR C trr IR=1mA IF=0.5A IF=1A VR=15V VR=10V, f=1MHz cycle IF=IR=100mA, See specified Test Circuit. 15 0.3 0.35 42 15 0.35 0.4 500 V V V A pF ns V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=--1mA, VGS=0 VDS=--20V, VGS=0 VGSS=8V, VDS=0 VDS=--10V, ID=--1mA VDS=--10V, ID=-3A ID=--3A, VGS=--4.5V ID=--2.5A, VGS=-2.5V ID=--0.1A, VGS=-1.8V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=--4.5V, ID=--3A VDS=--10V, VGS=--4.5V, ID=--3A VDS=--10V, VGS=--4.5V, ID=--3A IS=--3A, VGS=0 --20 --10 10 --0.3 3.5 5 130 170 230 410 60 40 9 27 42 38 5.0 0.6 1.2 --1.0 --1.2 170 240 340 --1.0 V A A V S m m m pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit

Electrical Connection
8 7 6 5

(Top view) 1 2 3 4

1 : Anode 2 : No Contact 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Cathode 8 : Cathode

Switching Time Test Circuit

[MOSFET]
VIN 0V --4.5V VIN ID= --3A RL=3.3 VDD= --10V

trr Test Circuit

[SBD]

Duty10% 100mA 10mA trr

FW503

D
PW=10s D.C.1%

VOUT

10s

--5V

P.G

50

100mA

50

100

10

No.7312-2/5

FW503
--3

ID -- VDS
V

[MOSFET]

--3

ID -- VGS

[MOSFET] VDS=10V

--3.0 V

--2 .5

.8 --1

--1.5V

Drain Current, ID -- A

--4.0 V

--2

Drain Current, ID -- A

--2

--10 .

0V

--1

--1

Ta= 7
0 0 --0.2 --0.4 --0.6

0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0

25 C

--0.8

--1.0

--25 C
--1.2 --1.4

VGS= --1.0V

5C

--1.6

--1.8

--2.0

400

Drain-to-Source Voltage, VDS -- V IT05278 RDS(on) -- VGS [MOSFET] Ta=25C

400

IT05279 Gate-to-Source Voltage, VGS -- V RDS(on) -- Ta [MOSFET]

Static Drain-to-Source On-State Resistance, RDS(on) -- m

350 300 250

Static Drain-to-Source On-State Resistance, RDS(on) -- m

350 300 250 200 150 100 50 0 --60

3.0A
200

.1A I D=0

=1.8V , V GS
2.5V V GS=

ID=0.1A
150 100 50 0 0 --2

2.5A

.5A, I D=2

A, I D=3.0

.0V V GS=4

--4

--6

--8

--10

--40

--20

20

40

60

80

100

120

140

160

10

IT05280 Gate-to-Source Voltage, VGS -- V [MOSFET] yfs -- ID

Ambient Temperature, Ta -- C
--10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2

IT05281

IF -- VSD

Forward Transfer Admittance, yfs -- S

7 5 3 2

VDS=10V

[MOSFET] VGS=0

1.0 7 5 3 2

C -25 =Ta C 25C 75

Forward Current, IF -- A

Ta =7 5C 25 C
--0.3 --0.4 --0.5 --0.6 --0.7

0.1 --0.01

5 7 --0.1

5 7 --1.0

Drain Current, ID -- A
5 3

5 7 --10 IT05282

--0.01 --0.2

--0.8

--25
--0.9

C
--1.0

--1.1

--1.2

SW Time -- ID

[MOSFET] VDD= --10V VGS= --4V

1000 7 5

Drain-to-Source Forward Voltage, VF -- V IT05283 Ciss, Coss, Crss -- VDS [MOSFET] f=1MHz Ciss

Switching Time, SW Time -- ns

100 7 5 3 2

Ciss, Coss, Crss -- pF

3 2

td (off)

tf

100 7 5 3 2

Coss

tr
td(on)

Crss

10 7 5 3 --0.1

10 2 3 5 7 --1.0 2 3 5

Drain Current, ID -- A

--10 IT05284

--2

--4

--6

--8

--10

--12

--14

--16

--18

--20

Drain-to-Source Voltage, VDS -- V

IT05285

No.7312-3/5

FW503
--10

VGS -- Qg
VDD= --10V ID= --3A

[MOSFET]

3 2 --10 7 5

ASO
IDP= --12A ID= --3A

[MOSFET] <10s

Gate-to-Source Voltage, VGS -- V

--8

10

Drain Current, ID -- A

3 2 --1.0 7 5 3 2 --0.1 7 5 3 2

1m
m 0m s 10 s s

--6

10

10

--4

--2

Operation in this area is limited by RDS(on).

0 0 1 2 3 4 5 6 7 8 9 10

--0.01 --0.01

Ta=25C Single pulse Mounted on a ceramic board (2000mm2!0.8mm) 10S 1unit

2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3

Total Gate Charge, Qg -- nC

2.5

IT05286

PD -- Ta

Drain-to-Source Voltage, VDS -- V

IT05287

[MOSFET]

Allowable Power Dissipation, PD -- W

2.0

ou

nte

do

na

1.5

ce

ram

ic

bo

ard

1.0

(20

00

mm

!0

.8m

0.5

m)

0S

1u

nit
160

0 0 20 40 60 80 100 120 140

Ambient Temperature, Ta -- C
2 1.0

IT05288

IF -- VF

[SBD]

Reverse Current, IR -- mA

100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0

IR -- VR
2 Ta=1 5C

[SBD]

Forward Current, IF -- A

5 3 2 0.1 7 5 3 2 0.01 0 0.1 0.2 0.3 0.4 0.5 IT02957

100C

12 5 10 C 0 75 C 50 C 25 C C

75C
50C

Ta =

25C

10

15 IT02958

Forward Voltage, VF -- V Average Forward Power Dissipation, PF(AV) -- W

0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.2 0.4 0.6 0.8 180 360 1.0

Reverse Voltage, VR -- V
3 2

PF(AV) -- IO

[SBD]

C -- VR

[SBD] f=1MHz

Interterminal Capacitance, C -- pF
1.2 1.4 IT02959

(1)Rectangular wave =60 (2)Rectangular wave =120 (3)Rectangular wave =180 (4)Sine wave =180 Rectangular wave
360

100 7 5 3 2 10 7 5 3 2 1.0 1.0

(1)

(2) (4)

(3)

Sine wave

10

2 IT02960

Average Forward Current, IO -- A

Reverse Voltage, VR -- V

No.7312-4/5

FW503
12

IS -- t
IS

[SBD]

Surge Forward Current, IFSM(Peak) -- A

Current waveform 50Hz sine wave

10

20ms t

0 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3

Time, t -- s

IT00636

Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2002. Specifications and information herein are subject to change without notice.
PS No.7312-5/5