Semiconductors

1. At very high temperature the extrinsic semiconductors become intrinsic because (a) of drive-in diffusion of dopants and carriers (b) band to band transition dominates over impurity ionization (c) impurity ionization dominates over band to band transition (d) band to band transition is balanced by impurity ionization Ans: (d) 2. Consider the following statements regarding a semiconductor 1. acceptor level lies close to the valence band 2. donor level lies close to the valance band 3. n-type semiconductor behaves as conductor at zero Kelvin 4. p-type semiconductor behaves as an insulator at zero Kelvin Of these statements: (a) 2 and 3 are correct (b) 1 and 3 are correct (c) I and 4 are correct (d) 3 and 4 are correct Ans: (c) 3. Assuming carrier mobility to be temperature independent it can be shown that pure Si (EG = 1.1eV) and Ge (EG = 0.7eV) have the same conductivity at a temperature of (a) 191K Ans: (d) 4. The Hall coefficient of an intrinsic semiconductor is: (a) positive under all conditions (c) zero under all conditions Ans: (b) 5. Consider the following statements: pure germanium and pure silicon are examples of I. direct band-gap semiconductors, 3. degenerate semiconductors Of these statements: (a) 1 alone is correct (b) 2 alone is correct (c) 3 alone is correct (d) 1 and 3 are correct Ans: (a) 6. The room temperature resistivity (in -m) of pure silicon is__________. (Assume necessary values) (a) 3000 Ans: (a) (b) 300 (c) 30 (d) 3 2. indirect band-gap semiconductors (b) negative under all conditions (d) Zero at 0 K (b)3000K (c) 471 K (d) 1470 K

7. A thin film resistor is to be made from a GaAs film doped n -type. The resistor is to have a value of 2 k. The resistor length is to be 200m and area is to be 10-6cm2. The doping efficiency is known to be 90%. The mobility of electrons is 8000cm2/V-s. The doping needed is (a) 8.7x1015cm-3 Ans: (a) Statement for Q.8-9: An n-type silicon sample contains a donor concentration of N d = 106 cm-3. The minority carrier hole lifetime is po= 10 s. 8. The thermal equilibrium generation rate of hole is (a) 5 x 108 cm-3s-1 (b) 104 cm-3s-1 (c) 2.25 x 109 cm-3s-1 (d) 103 cm-3s-1 9. The thermal equilibrium generation rate for electron is (a) 1.125 x 109 cm-3s-1 (b) 2.25 x 109 cm-3s-1 (c) 8.9 x 10-10 cm-3s-1 (d) 4 x 10-10 cm-3s-1 Diodes: 1. In a forward biased photo diode with increase in incident light intensity, the diode current (a) increases (b) remains constant across the diode increases, Ans: (c) 2. The diffusion potential across a P-N junction (a) decreases with increasing doping concentration (b) increases with decreasing band gap (c) does not depend on doping concentration (d) increases with increase in doping concentrations Ans: (d) 3. In a P-N junction, the space charge capacitance is proportional to V where Vis the applied bias voltage and n is a constant. The value ofn for step, Linearly graded and diffused junctions would be respectively (a) 1/2, 1/3 and 1/2.5 (b) 1/3, 1/2 and 1/2.5 Ans: (a) 4. In a step graded junction, the width w of the depletion layer varies as: (a) Vj Ans: (c) 5. In a forward biased diode, with NA>> ND, product of the diffusion capacitance CD and the dynamic diode resistance r equals:
2 (b) V j

(b) 8.7x1021cm-3

(c) 4.6x1015cm-3

(d) 4.6x1021cm-3

(c) decreases (d) remaining constant, the voltage drop

(c) 1/2, 1/2.5 and 1/3 (d) 1/3, 1/2.5 and 1/2

(c)

Vj

(d) 1/Vj

(a) 1/Tp

(b) Tp

2 (c) Tp

2 (d) 1/ Tp

where Tp is the life time of injected minority earner holes. Ans: (b) 6. When the current through a Zener diode increase from 20mA to 30mA, the voltage across it changes from 5.6 V to 5.65 V. The voltage across the Zener when the current is 35 mA is ____. (a) 5.875V Ans: (b) Statement for Q.7- 8: A silicon abrupt junction has dopant concentration NA =2 x 1016 cm-3 and ND =2 x 1015 cm-3. The applied reverse bias voltage is VR = 8 V. 7. The maximum electric field | Emax| in depletion region is (a) 15 x 104 V/cm (b) 7 x 104 V/cm 8. The space charge region is (a) 2.5 m (b) 25 m (c) 50 m (d) 100 m (b) they have a large reverse resistance (d) their peak inverse voltage is small. 9. Schottky diodes, also called hot carrier diodes, are used in wave shaping circuit because (a) They have a small recovery time (c) They have large forward current Ans: (a) 10. The temperature coefficient of a breakdown diode based on Avalanche break down is (a) Positive Ans: (a) 11. In a standard regulator circuit using Zener diode 10V the input voltage vanes from 25V to 40V and load current is 10 mA to 20 mA, the minimum Zener current is 5 mA, the value of the series resistance in ohms is ________. (a) 1500 Ans: (c) Transistors & ICs 1. If = 0.995, IE=10mA and Ico = 0.5 mA, then ICEO will be (a) 100 A Ans: (a) 2. Match list-1 (Transistor parameter) with Iist-2 (typical value) and select the correct answer using the codes given below: (b) 25 A (c) 10.1 ma (d) 10.3 mA (b) 1200 (c) 600 (d) 1000 (b) negative (c) Zero (d) none (c) 3.5 x 104 V/cm (d) 5 x 104 V/cm (b) 5.675V (c) 5.775V (d) 5.975 V

Ans. (b) 3. To avoid thermal runaway in the design of an analog circuit, the operating point of the BJT should be such that it satisfies the condition (a) VCE = VCC Ans: (b) 4. An n-channel JFET has a pinch-off voltage of V p=-5V, VDS(max)=20V, and gm=2 mA/V. The minimum ON resistance is achieved in the JFET for (a) VGS=-7V and VDS=0V (c) VGS= 0V and VDS=20V Ans: (b) 5. The threshold voltage of an n-channel MOSFET can be increased by (a) Increasing the channel dopant concentration (b) Reducing the channel dopant concentration. (c) Reducing the gate oxide thickness (d) Reducing the channel length. Ans: (b) 6. Two identical FETs each characterized by the parameters gm and rd connected in parallel. The composite FET is then characterized by the parameters. (a) gm/2 and 2rd Ans: (c) 7. An n-channel JFET has IDSS=2 mA and Vp= -4 v. Its transconductance gm (in milli mho) for an applied gate-to-source voltage VGS of -2 V is (a) 0.25 Ans:(b) (b) 0.5 (c) 0.75 (d) 1.0 (b) gm/2 and rd/2 (c) 2gm and rd/2 (d) 2gm and 2rd (b) VGS=0V and VDS=0V (d) VGS=-7V and VDS=20V (b) VCE VCC (c) VCE VCC (d) VCE 0.78 VCC

8. The amplification factor of FET is 40 and drain resistance is equal to 10 and load resistance is 10 k, the voltage gain is (a)-40 Ans: (c) 9. Which of the following transistor are symmetrical in the sense that emitter and collector, or source and drain terminals can be interchanged? (a) JFET Ans: (c) 10. In JFET, the primary control on drain current is exerted by (a) channel resistance (c) voltage drop across channel Ans: (d) (b) size of depletion regions (d) gate reverse bias (b) NPN transistor (c) MOSFET (d) PNP transistor (b)40 (c)-20 (d) -4