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DATA SHEET
Philips Semiconductors
Product specication
TEA5710; TEA5710T
The TEA5710 is a high performance Bimos IC for use in AM/FM radios. All necessary functions are integrated: from AM and FM front-end to detector output stages.
QUICK REFERENCE DATA Conditions AM: fi = 1 MHz; m = 0.3; fm = 1 kHz; VP = 3.0 V; measured in Fig.4 with S1 in position B and S2 in position A, unless otherwise specied. Conditions FM: fi = 100 MHz; f = 22.5 kHz; fm = 1 kHz; VP = 3.0 V; measured in Fig.4 with S1 in position B and S2 in position A, unless otherwise specied. SYMBOL VP IP PARAMETER positive supply voltage supply current in AM mode in FM mode Tamb AM performance Vin1 V13 THD FM performance Vin3 V13 THD RF sensitivity AF output voltage total harmonic distortion 1.0 47 2.0 58 0.3 3.8 69 0.8 V mV % RF sensitivity AF output voltage total harmonic distortion 40 36 55 45 0.8 70 70 2.0 V mV % operating ambient temperature range 5.6 7.3 15 7.5 9.0 9.9 11.2 +60 mA mA C 2.0 MIN. TYP. 12 MAX. V UNIT
ORDERING INFORMATION EXTENDED TYPE NUMBER TEA5710 TEA5710T Notes 1. SOT234-1; 1996 August 27. 2. SOT137-1; 1996 August 27. PACKAGE PINS 24 24 PIN POSITION SDIL SO24L MATERIAL plastic plastic CODE SOT234AG(1) SOT137A(2)
March 1994
Philips Semiconductors
Product specication
TEA5710; TEA5710T
FM-RFI 1 24
FM-RFO 20
FM-MIXER 4 FM MIXER
FM-IF1I 6
FM-RF1O 8 FM IF 1
FM-IF2I 10 FM IF 2
FM-DEM 12 FM DETECTOR
RFGND
FM FRONT-END
18 16 22 5 9 11 17 AM OSCILLATOR AGC AM/FM INDICATOR 15 IND STABILIZER FM OSCILLATOR FM 14 AM/FM SWITCH 21 AM/FM
TEA5710 TEA5710T
AM
AM-AGC/ FM-AFC
AM-RFI
23
AM FRONT-END
AM MIXER
AM-IF
AM DETECTOR
13
AF
3 AM-MIXER
2 AM-IF1I
7 AM-IF2I/O
19 SUBGND
MGE106
March 1994
Philips Semiconductors
Product specication
TEA5710; TEA5710T
DESCRIPTION FM-RF aerial input (input impedance typ. 50 ) input from IFT or ceramic lter (input impedance typ. 3 k) open-collector output to IFT output to ceramic IF lter (output impedance typ. 330 ) stabilized internal supply voltage (A) rst FM-IF input (input impedance typ. 330 ) input/output to IFT; output: current source rst FM-IF output (output impedance typ. 330 ) stabilized internal supply voltage (B) second FM-IF input (input impedance typ. 330 ) ground of IF and detector stages ceramic discriminator pin audio output (output impedance typ. 5 k) switch terminal: open for AM; ground for FM eld-strength dependent indicator positive supply voltage parallel tuned AM-OSC circuit to ground parallel tuned FM-OSC circuit to ground substrate and RF ground parallel tuned FM-RF circuit to ground AGC/AFC capacitor pin ripple capacitor pin parallel tuned AM aerial circuit to ground (total input capacitance typ. 3 pF) FM-RF ground
March 1994
Philips Semiconductors
Product specication
TEA5710; TEA5710T
handbook, halfpage
handbook, halfpage
1 2 3 4 5 6
1 2 3 4 5 6
TDA5710
7 8 9 18 FM-OSC 17 AM-OSC 16 VP 15 IND 14 AM/FM 13 AF
MGE104
TDA5710T
7 8 9 18 FM-OSC 17 AM-OSC 16 VP 15 IND 14 AM/FM 13 AF
MGE105
FUNCTIONAL DESCRIPTION The TEA5710 incorporates internal stabilized power supplies. The maximum supply voltage is 12 V, the minimum voltage can go down temporarily to 1.8 V without any loss in performance. The AM circuit incorporates a double balanced mixer, a one pin low-voltage oscillator (up to 30 MHz), a field-strength dependent indicator output and is designed for distributed selectivity. The AM input is designed to be connected to the top of a tuned circuit. AGC controls the IF amplification and for large signals it lowers the input impedance. The first AM selectivity can be an IFT as well as an IFT combined with a ceramic filter; the second one is an IFT. The FM circuit incorporates a tuned RF stage, a double balanced mixer, a one-pin oscillator, a field-strength indicator output and is designed for distributed IF ceramic filters. The FM quadrature detector uses a ceramic resonator.
March 1994
Philips Semiconductors
Product specication
TEA5710; TEA5710T
UNIT
THERMAL RESISTANCE SYMBOL Rth j-a PARAMETER from junction to ambient for SDIL version TEA5710 for SO24L version TEA5710T CIRCUIT DESIGN DATA DC PIN VOLTAGE (V) PIN NO. PIN SYMBOL AM FM EQUIVALENT CIRCUIT 69 76 K/W K/W VALUE UNIT
FM-RFI
0.73
1 24 20
220
MGE114
5 3 k
AM-IF1I input
1.4
1.4
11
MGE115
March 1994
Philips Semiconductors
Product specication
TEA5710; TEA5710T
AM-MIXER output
1.4
1.4
MGE116
FM-MIXER output
1.0
4 680
MGE117
16
VSTABA
1.4
1.4
22 5
MGE118
120 2.7 k
FM-IFI input
0.73
11
MGE119
March 1994
Philips Semiconductors
Product specication
TEA5710; TEA5710T
AM-IF2I/O input/output
1.4
1.4
11
MGE120
FM-IF1O output
0.69
8 560
MGE121
16
VSTABB
1.4
1.4
22 9
MGE122
180 2.2 k
10
FM-IF2I input
10
0.73
11
MGE123
11
IFGND
March 1994
Philips Semiconductors
Product specication
TEA5710; TEA5710T
180 12
12
FM-DEM
1.0
910
11
MGE124
13
AF output
0.6
0.7
13 25 k 5 k 11
MGE125
14
AM/FM switch
1.3
14
MGE126
15
15
IND
3.0
3.0
11
MGE127
16
VP
3.0
3.0
17
AM-OSC
0
17
19
MGE128
March 1994
Philips Semiconductors
Product specication
TEA5710; TEA5710T
18
18
FM-OSC
0
10 k 21
19
MGE129
19
SUBGND
20
FM-RFO
0
1 24 20
220
MGE114
21
21
AM-AGC/ FM-AFC
0.1
0.7
11
MGE130
March 1994
10
Philips Semiconductors
Product specication
TEA5710; TEA5710T
16
22
22
RIPPLE
2.1
2.1
11
MGE131
23
AM-RFI
0
19
23
MGE132
24
RFGND
0
1 24 20
220
MGE114
March 1994
11
Philips Semiconductors
Product specication
TEA5710; TEA5710T
AM CHARACTERISTICS fi = 1 MHz; m = 0.3; fm = 1 kHz; VP = 3.0 V; measured in Fig.4 with S1 in position B and S2 in position A, unless otherwise specied. SYMBOL IP Ci Gc Vin1 Vin2 V13 THD Vin1 IIND IINDOFF PARAMETER supply current input capacitance front-end conversion gain RF sensitivity IF sensitivity AF output voltage total harmonic distortion large signal handling indicator current indicator OFF current CONDITIONS no input signal V21 = 0.2 V V21 = 0.2 V S/N = 26 dB V13 = 30 mV; S1 in position A Vin2 = 3.16 mV; S1 in position A Vin1 = 1 mV m = 0.8; THD 8% Vin2 = 100 mV; S1 in position A Vin2 = 0 V; S1 in position A FM CHARACTERISTICS fi = 100 MHz; f = 22.5 kHz; fm = 1 kHz; VP = 3.0 V; measured in Fig.4 with S1 in position B and S2 in position A, unless otherwise specied. SYMBOL IP Vin3 Vin3 V6/Vin3 PARAMETER supply current RF limiting sensitivity RF sensitivity front-end voltage gain CONDITIONS no input signal V13 = 3 dB S/N = 26 dB Vin3 1 mV; including ceramic lter K1 S2 in position B; V13 = 3 dB Vin3 = 1 mV Vin3 = 1 mV; f = 22.5 kHz THD 5% Vin4 = 100 mV; S2 in position B Vin4 = 0 V; S2 in position B MIN. 7.3 0.4 1.0 12 TYP. 9.0 1.2 2.0 18 MAX. 11.2 3.8 3.8 22 UNIT mA V V dB 0 10 A 2 3.5 6 mA 150 0.8 300 2.0 % mV 36 45 70 mV 1.8 40 0.13 MIN. 5.6 3 3.3 55 0.2 TYP. 7.5 5.0 70 0.45 V mV MAX. 9.9 UNIT mA pF
IF sensitivity AF output voltage total harmonic distortion large signal handling indicator current indicator OFF current
47 2
30 69 0.8 6 10
V mV % mV mA A
March 1994
12
March 1994
handbook, full pagewidth
Philips Semiconductors
Vin1 18 pF 8.2 pF 22 pF
L2
L3 L4
43
L8 40 H
(50 )
1 MHz
6.8
680 pF
24
13
TEA5710 TEA5710T
2 3 4 5 6 7 8 9 S1 S2 B K1 L6 L5 Rg 330 (50 ) 10.7 MHz Vin4 50 A B K2 A
Vin3
10
11
12
Rg
27
1 nF K3
(50 )
100 MHz
560
91
MGE108
Rg
220nF
3 k
(50 )
468 kHz
Vin2
50
to pin 5
TEA5710; TEA5710T
Product specication
March 1994
handbook, full pagewidth
Philips Semiconductors
APPLICATION INFORMATION
L1 2
Ca 140 pF
CTa 8 pF
L2 1
AM-RFI
FM-RFI
C4 10 nF LED CQS54 C5 10 nF AF VP 20 19 18 17 16 15 14 13 8 FM AM
C10 100 F
C2 100 F
C3 10 F
14
TEA5710 TEA5710T
5 6 7 8 9 10 11 12 1 K1 2 3 SFE10.7MS3 SFE10.7MS2 L6 K2 K3 CDA10.7MC40
24
23
22
21
TDA7050T
1 2 3 4
C1 4.7 nF
C9 100 nF
MGE107
CO
22 pF
L7 60 nH
2 3
L5
P1 4.7 k
TEA5710; TEA5710T
Product specication
Fig.5 Application circuit of TEA5710 (AM: 522 to 1611 kHz, FM: 87.5 to 108 MHz) with stereo headphone amplifier TDA7050T.
Philips Semiconductors
Product specication
TEA5710; TEA5710T
MGE109
Fig.6 Printed-circuit board layout (track side) for application circuit of Fig.5.
March 1994
15
Philips Semiconductors
Product specication
TEA5710; TEA5710T
40 H
6.8 43
1MHz
L1
C4 C3 C7
L2
1 K1
ANT F M A M OSC L3 L4 C9
TEA5710
C8 C5
K2 K3 P1
C6
1.5 V
Fig.7 Printed-circuit board layout (component side) for application circuit of Fig.5.
March 1994
16
Philips Semiconductors
Product specication
TEA5710; TEA5710T
3 2 1 S
MGE133
L4
3 2 1 S L5
6
MGE134
3 2 1 S
MGE135
L6
March 1994
17
Philips Semiconductors
Product specication
TEA5710; TEA5710T
3 L8 1 S
MGE136
Capacitors C1 VARICON AM: 140/82 pF FM: 2 20 pF trimmer: 4 8 pF TOKO type no. HU-22124 Application notes 1. Short circuiting: all pins are short-circuit proof except pin 1 (FM-RFI) with respect to the supply voltage pin. 2. Tuning indicator (at pin 15, IND): connect either a tuning indicator (e.g. a LED) between this pin and the supply voltage (pin 16) or connect the pin IND to ground. 3. For an example of PC-board layout: see Figs 6 and 7.
March 1994
18
Philips Semiconductors
Product specication
TEA5710; TEA5710T
MGE111
VAF (dB) 0 dB = 45 mV 10
signal m = 0.3
20 noise m=0
level
30
40
50
Vin1 (V)
0 106
Fig.8
Typical AM audio output voltage (VAF; signal at m = 0.3), noise, THD (at m = 0.3) and indicator current (level) as a function of RF input voltage (Vin1; f = 1 kHz). Measured in test circuit of Fig.4 with VP = 3.0 V.
March 1994
19
Philips Semiconductors
Product specication
TEA5710; TEA5710T
MGE112
VAF (dB) 0 dB = 45 mV 10
signal m = 0.3
20
30
40
50
0 107
Fig.9
Typical AM audio output voltage (VAF; signal at m = 0.3), noise, THD (at m = 0.3) and indicator current (level) as a function of field-strength (f = 1 kHz). Measured at 1 MHz in application circuit of Fig.5 with VP = 3 V.
March 1994
20
Philips Semiconductors
Product specication
TEA5710; TEA5710T
MGE113
VAF (dB) 0 dB = 65 mV 10
signal
20
30 noise ind
40
60
70 101
10
102
103
104
105
Vin3 (V)
0 106
Fig.10 Typical FM audio output voltage (VAF; signal), noise, THD and indicator current (ind) as a function of RF input voltage (Vin3; df = 22.5 kHz). Measured in test circuit of Fig.4 at VP = 3 V.
March 1994
21
Philips Semiconductors
Product specication
TEA5710; TEA5710T
SOT234-1
D seating plane
ME
A2
A1 c Z e b 24 13 b1 w M (e 1) MH
pin 1 index E
12
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A max. 4.7 A1 min. 0.51 A2 max. 3.8 b 1.3 0.8 b1 0.53 0.40 c 0.32 0.23 D (1) 22.3 21.4 E (1) 9.1 8.7 e 1.778 e1 10.16 L 3.2 2.8 ME 10.7 10.2 MH 12.2 10.5 w 0.18 Z (1) max. 1.6
Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT234-1 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION
March 1994
22
Philips Semiconductors
Product specication
TEA5710; TEA5710T
SOT137-1
A X
c y HE v M A
Z 24 13
5 scale
10 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 2.65 0.10 A1 0.30 0.10 A2 2.45 2.25 A3 0.25 0.01 bp 0.49 0.36 c 0.32 0.23 D (1) 15.6 15.2 0.61 0.60 E (1) 7.6 7.4 0.30 0.29 e 1.27 0.050 HE 10.65 10.00 0.42 0.39 L 1.4 Lp 1.1 0.4 Q 1.1 1.0 0.043 0.039 v 0.25 0.01 w 0.25 0.01 y 0.1 Z
(1)
0.9 0.4
8o 0o
Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT137-1 REFERENCES IEC 075E05 JEDEC MS-013AD EIAJ EUROPEAN PROJECTION
March 1994
23
Philips Semiconductors
Product specication
TEA5710; TEA5710T
Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 C. WAVE SOLDERING Wave soldering techniques can be used for all SO packages if the following conditions are observed: A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. The longitudinal axis of the package footprint must be parallel to the solder flow. The package footprint must incorporate solder thieves at the downstream end. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Maximum permissible solder temperature is 260 C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 C within 6 seconds. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. REPAIRING SOLDERED JOINTS Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
March 1994
24
Philips Semiconductors
Product specication
TEA5710; TEA5710T
This data sheet contains target or goal specications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains nal product specications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specication is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specication. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
March 1994
25