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G
S CEB SERIES TO-263(DD-PAK) G
G D S
CEP SERIES TO-220
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD EAS IAS TJ,Tstg 30
Units V V A A W W/ C mJ A C
20
100 400 100 0.67 875 35 -55 to 175
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RJC RJA Limit 1.5 62.5 Units C/W C/W
2004.September 4 - 178
http://www.cetsemi.com
CEP83A3/CEB83A3
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forwand Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-On Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 20A VDS = 15V, ID = 16A, VGS = 5V VDD = 15V, ID = 1A, VGS = 10V, RGEN = 6 25.7 10 128 34 50 20.8 19 90 1.5 50 20 200 70 65 ns ns ns ns nC nC nC A V
c
Tc = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Test Condition VGS = 0V, ID = 250A VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250A VGS = 10V, ID = 50A VGS = 4.5V, ID = 40A VDS = 10V, ID = 15A 1 4.2 6.0 27 9500 800 300 Min 30 1 100 -100 3 5.3 8.0 Typ Max Units V
A
nA nA V m m S pF pF pF
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature b.Pulse Test : Pulse Width < 300s, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.L = 0.5mH, IAS = 35A, VDD = 25V, RG = 25, Starting TJ = 25 C
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CEP83A3/CEB83A3
100 VGS=10,8,6,4V 50
80
40
60
30
VGS=3V
40
20 25 C 10 TJ=125 C -55 C 3 4 5
20
0 0 1 2
ID=50A VGS=10V
C, Capacitance (pF)
-50
50
100
150
200
VDS=VGS ID=250A
10
10
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current
4 - 180
CEP83A3/CEB83A3
VGS, Gate to Source Voltage (V)
10 VDS=15V ID=16A 10
3
RDS(ON)Limit
4
100s 1ms 10ms DC
10
10
0 0 20 40 60 80 100
10
10
10
10
toff tr
90%
RL VOUT
td(on) VOUT
td(off)
90% 10%
tf
10%
INVERTED
VIN
50% 10%
50%
PULSE WIDTH
10
D=0.5
0.2
10
-1
PDM t1 t2 1. RcJA (t)=r (t) * RcJA 2. RcJA=See Datasheet 3. TJM-TA = P* RcJA (t) 4. Duty Cycle, D=t1/t2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve
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