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60V, 50A ,RDS(ON) = 22m (typ) @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
CEP50N06/CEB50N06
G
G D S
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD EAS IAS TJ,Tstg 60
Units V V A A W W/ C mJ A C
20
50 150 131 0.88 225 50 -55 to 175
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RJC RJA Limit 1.14 62.5 Units W/ C W/ C
CEP50N06/CEB50N06
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 30A VDS = 48V, ID = 48A, VGS = 10V VDD = 30V, ID = 48A, VGS = 10V, RGEN = 7.5 18 12.5 32.5 3 8 1.5 2 50 1.2 24 14 65 6 16 ns ns ns ns nC nC nC A V
c
Tc = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Test Condition VGS = 0V, ID = 250A VDS = 54V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250A VGS = 10V, ID = 30A VDS = 10V, ID = 25A 2 19 19 1230 345 16 Min 60 1 100 -100 4 22 Typ Max Units V
A
nA nA V m S pF pF pF
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300s, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.L = 90H, IAS = 50A, VDD = 24V, RG = 25, Starting TJ = 25 C
CEP50N06/CEB50N06
120 100 80 60 40 20 0
VGS=10V
125
VGS=7V
VGS=8V
25 C 100 75 50 25 TJ=125 C 6 0 0 2 4
-55 C 6 8 10
C, Capacitance (pF)
-50
50
100
150
200
TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature IS, Source-drain current (A)
VGS=0V
10
1
ID=250A
10
-25
25
50
75
100
125
150
10
-1
0.3
0.6
0.9
1.2
1.5
1.8
VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current
CEP50N06/CEB50N06
VGS, Gate to Source Voltage (V)
10 V =48V DS ID=50A RDS(ON)Limit
8 6 4 2 0
10
4
100s 1ms 10ms 100ms DC
10
10
10
10
Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD t on V IN VGS RGEN G RL D VOUT td(on) VOUT
10%
toff tr
90%
td(off)
90% 10%
tf
INVERTED
90%
VIN
50% 10%
50%
PULSE WIDTH
10
D=0.5 0.2
10
-1
PDM t1 t2
10
-2
1. RcJC (t)=r (t) * RcJC 2. RcJC=See Datasheet 3. TJM-TC = P* RcJC (t) 4. Duty Cycle, D=t1/t2
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve